SE7905635L - Laser - Google Patents
LaserInfo
- Publication number
- SE7905635L SE7905635L SE7905635A SE7905635A SE7905635L SE 7905635 L SE7905635 L SE 7905635L SE 7905635 A SE7905635 A SE 7905635A SE 7905635 A SE7905635 A SE 7905635A SE 7905635 L SE7905635 L SE 7905635L
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- conductivity type
- epitaxial layer
- grooves
- active
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92977678A | 1978-07-31 | 1978-07-31 | |
US06/004,143 US4215319A (en) | 1979-01-17 | 1979-01-17 | Single filament semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7905635L true SE7905635L (sv) | 1980-02-01 |
SE436670B SE436670B (sv) | 1985-01-14 |
Family
ID=26672669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7905635A SE436670B (sv) | 1978-07-31 | 1979-06-27 | Halvledarlaser |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2929719C2 (sv) |
GB (1) | GB2027261B (sv) |
IT (1) | IT1121922B (sv) |
SE (1) | SE436670B (sv) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2062949B (en) * | 1979-10-12 | 1983-08-10 | Rca Corp | Single filament semiconductor laser with large emitting area |
US4426701A (en) * | 1981-12-23 | 1984-01-17 | Rca Corporation | Constricted double heterostructure semiconductor laser |
GB2129211B (en) * | 1982-10-21 | 1987-01-14 | Rca Corp | Semiconductor laser and a method of making same |
FR2535121B1 (fr) * | 1982-10-25 | 1989-01-06 | Rca Corp | Laser a semi-conducteur et son procede de fabrication |
DE3240700C2 (de) * | 1982-11-04 | 1994-07-07 | Rca Corp | Verfahren zum Herstellen eines Halbleiterlasers und danach hergestellter Halbleiterlaser |
DE3484266D1 (de) * | 1983-11-30 | 1991-04-18 | Sharp Kk | Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. |
DE4240539C2 (de) * | 1992-01-21 | 1997-07-03 | Mitsubishi Electric Corp | Verfahren zur Herstellung eines Halbleiterlasers |
-
1979
- 1979-06-25 IT IT23845/79A patent/IT1121922B/it active
- 1979-06-27 SE SE7905635A patent/SE436670B/sv not_active IP Right Cessation
- 1979-07-21 DE DE2929719A patent/DE2929719C2/de not_active Expired
- 1979-07-25 GB GB7925871A patent/GB2027261B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT1121922B (it) | 1986-04-23 |
DE2929719A1 (de) | 1980-02-14 |
DE2929719C2 (de) | 1982-08-05 |
GB2027261A (en) | 1980-02-13 |
IT7923845A0 (it) | 1979-06-25 |
SE436670B (sv) | 1985-01-14 |
GB2027261B (en) | 1982-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
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