GB2129211B - Semiconductor laser and a method of making same - Google Patents

Semiconductor laser and a method of making same

Info

Publication number
GB2129211B
GB2129211B GB08230129A GB8230129A GB2129211B GB 2129211 B GB2129211 B GB 2129211B GB 08230129 A GB08230129 A GB 08230129A GB 8230129 A GB8230129 A GB 8230129A GB 2129211 B GB2129211 B GB 2129211B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
making same
making
same
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08230129A
Other versions
GB2129211A (en
Inventor
Gregory Hammond Olsen
Thomas Joseph Zamerowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Priority to GB08230129A priority Critical patent/GB2129211B/en
Publication of GB2129211A publication Critical patent/GB2129211A/en
Application granted granted Critical
Publication of GB2129211B publication Critical patent/GB2129211B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB08230129A 1982-10-21 1982-10-21 Semiconductor laser and a method of making same Expired GB2129211B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08230129A GB2129211B (en) 1982-10-21 1982-10-21 Semiconductor laser and a method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08230129A GB2129211B (en) 1982-10-21 1982-10-21 Semiconductor laser and a method of making same

Publications (2)

Publication Number Publication Date
GB2129211A GB2129211A (en) 1984-05-10
GB2129211B true GB2129211B (en) 1987-01-14

Family

ID=10533764

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08230129A Expired GB2129211B (en) 1982-10-21 1982-10-21 Semiconductor laser and a method of making same

Country Status (1)

Country Link
GB (1) GB2129211B (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
US4215319A (en) * 1979-01-17 1980-07-29 Rca Corporation Single filament semiconductor laser
IT1121922B (en) * 1978-07-31 1986-04-23 Rca Corp SEMICONDUCTOR LASER, EMISSING A SINGLE BEAM OF LIGHT
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
GB2062949B (en) * 1979-10-12 1983-08-10 Rca Corp Single filament semiconductor laser with large emitting area

Also Published As

Publication number Publication date
GB2129211A (en) 1984-05-10

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20021020