FR2400784A1 - Laser a injection a structure heterogene - Google Patents

Laser a injection a structure heterogene

Info

Publication number
FR2400784A1
FR2400784A1 FR7820730A FR7820730A FR2400784A1 FR 2400784 A1 FR2400784 A1 FR 2400784A1 FR 7820730 A FR7820730 A FR 7820730A FR 7820730 A FR7820730 A FR 7820730A FR 2400784 A1 FR2400784 A1 FR 2400784A1
Authority
FR
France
Prior art keywords
layer
injection
constricted region
region
injection laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7820730A
Other languages
English (en)
Other versions
FR2400784B1 (fr
Inventor
Martin B Small
Peter S Zory Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2400784A1 publication Critical patent/FR2400784A1/fr
Application granted granted Critical
Publication of FR2400784B1 publication Critical patent/FR2400784B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/50—Machine tool, machine tool null till machine tool work handling
    • G05B2219/50018—Zero point floating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne les lasers à injection à structure hétérogène. La couche active 18 présente une région rétrécie 20 au droit du contact 36. La couche 18 est placée entre deux couches de confinement 16 et 24, l'interface 28 ou 30 entre la couche 18 et l'une des couches 16 ou 24 formant une jonction p-n. Le gain accru dans la région rétrécie tend à effectivement restreindre le fonctionnement en laser à la région rétrécie. Les dimensions de cette région peuvent être choisies de manière à éliminer les modes fonctionnement à plusieurs filaments de manière à fournir un faisceau laser à spot unique dans une large gamme de niveaux d'injection. Applicable dans tous les domaines d'utilisation des lasers à injection.
FR7820730A 1977-08-15 1978-07-05 Laser a injection a structure heterogene Granted FR2400784A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/824,690 US4166253A (en) 1977-08-15 1977-08-15 Heterostructure diode injection laser having a constricted active region

Publications (2)

Publication Number Publication Date
FR2400784A1 true FR2400784A1 (fr) 1979-03-16
FR2400784B1 FR2400784B1 (fr) 1980-03-14

Family

ID=25242087

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7820730A Granted FR2400784A1 (fr) 1977-08-15 1978-07-05 Laser a injection a structure heterogene

Country Status (7)

Country Link
US (1) US4166253A (fr)
JP (1) JPS5432284A (fr)
CA (1) CA1096962A (fr)
DE (1) DE2834922C2 (fr)
FR (1) FR2400784A1 (fr)
GB (1) GB1587008A (fr)
IT (1) IT1112289B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143460A2 (fr) * 1983-11-30 1985-06-05 Sharp Kabushiki Kaisha Dispositif laser à semi-conducteur et son procédé de fabrication

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215319A (en) * 1979-01-17 1980-07-29 Rca Corporation Single filament semiconductor laser
US4249142A (en) * 1978-11-30 1981-02-03 Xerox Corporation Enhancement of lowest order mode operation in nonplanar DH injection lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
GB2062949B (en) * 1979-10-12 1983-08-10 Rca Corp Single filament semiconductor laser with large emitting area
US4347486A (en) * 1979-10-12 1982-08-31 Rca Corporation Single filament semiconductor laser with large emitting area
JPS5674983A (en) * 1979-11-26 1981-06-20 Nec Corp Semiconductor laser
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
US4429397A (en) 1980-06-26 1984-01-31 Nippon Electric Co., Ltd. Buried heterostructure laser diode
GB2129211B (en) * 1982-10-21 1987-01-14 Rca Corp Semiconductor laser and a method of making same
JPH0732278B2 (ja) * 1982-10-27 1995-04-10 アールシーエー コーポレーシヨン 半導体レーザ
US4623427A (en) * 1983-08-12 1986-11-18 Hewlett-Packard Company Means and method for a self-aligned multilayer laser epitaxy structure device
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser
DE102011075502A1 (de) * 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3859178A (en) * 1974-01-17 1975-01-07 Bell Telephone Labor Inc Multiple anodization scheme for producing gaas layers of nonuniform thickness
US3883821A (en) * 1974-01-17 1975-05-13 Bell Telephone Labor Inc Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
JPS52127085A (en) * 1976-04-16 1977-10-25 Hitachi Ltd Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143460A2 (fr) * 1983-11-30 1985-06-05 Sharp Kabushiki Kaisha Dispositif laser à semi-conducteur et son procédé de fabrication
EP0143460A3 (en) * 1983-11-30 1987-05-13 Sharp Kabushiki Kaisha Semiconductor laser device and production method thereof
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor

Also Published As

Publication number Publication date
DE2834922C2 (de) 1984-07-19
CA1096962A (fr) 1981-03-03
JPS5432284A (en) 1979-03-09
FR2400784B1 (fr) 1980-03-14
IT7826105A0 (it) 1978-07-26
DE2834922A1 (de) 1979-03-01
GB1587008A (en) 1981-03-25
JPS5711516B2 (fr) 1982-03-04
IT1112289B (it) 1986-01-13
US4166253A (en) 1979-08-28

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Legal Events

Date Code Title Description
ST Notification of lapse