FR2400784A1 - Laser a injection a structure heterogene - Google Patents
Laser a injection a structure heterogeneInfo
- Publication number
- FR2400784A1 FR2400784A1 FR7820730A FR7820730A FR2400784A1 FR 2400784 A1 FR2400784 A1 FR 2400784A1 FR 7820730 A FR7820730 A FR 7820730A FR 7820730 A FR7820730 A FR 7820730A FR 2400784 A1 FR2400784 A1 FR 2400784A1
- Authority
- FR
- France
- Prior art keywords
- layer
- injection
- constricted region
- region
- injection laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title abstract 4
- 239000007924 injection Substances 0.000 title abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/50—Machine tool, machine tool null till machine tool work handling
- G05B2219/50018—Zero point floating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
L'invention concerne les lasers à injection à structure hétérogène. La couche active 18 présente une région rétrécie 20 au droit du contact 36. La couche 18 est placée entre deux couches de confinement 16 et 24, l'interface 28 ou 30 entre la couche 18 et l'une des couches 16 ou 24 formant une jonction p-n. Le gain accru dans la région rétrécie tend à effectivement restreindre le fonctionnement en laser à la région rétrécie. Les dimensions de cette région peuvent être choisies de manière à éliminer les modes fonctionnement à plusieurs filaments de manière à fournir un faisceau laser à spot unique dans une large gamme de niveaux d'injection. Applicable dans tous les domaines d'utilisation des lasers à injection.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/824,690 US4166253A (en) | 1977-08-15 | 1977-08-15 | Heterostructure diode injection laser having a constricted active region |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2400784A1 true FR2400784A1 (fr) | 1979-03-16 |
FR2400784B1 FR2400784B1 (fr) | 1980-03-14 |
Family
ID=25242087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7820730A Granted FR2400784A1 (fr) | 1977-08-15 | 1978-07-05 | Laser a injection a structure heterogene |
Country Status (7)
Country | Link |
---|---|
US (1) | US4166253A (fr) |
JP (1) | JPS5432284A (fr) |
CA (1) | CA1096962A (fr) |
DE (1) | DE2834922C2 (fr) |
FR (1) | FR2400784A1 (fr) |
GB (1) | GB1587008A (fr) |
IT (1) | IT1112289B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0143460A2 (fr) * | 1983-11-30 | 1985-06-05 | Sharp Kabushiki Kaisha | Dispositif laser à semi-conducteur et son procédé de fabrication |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4215319A (en) * | 1979-01-17 | 1980-07-29 | Rca Corporation | Single filament semiconductor laser |
US4249142A (en) * | 1978-11-30 | 1981-02-03 | Xerox Corporation | Enhancement of lowest order mode operation in nonplanar DH injection lasers |
JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
US4317085A (en) * | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
GB2062949B (en) * | 1979-10-12 | 1983-08-10 | Rca Corp | Single filament semiconductor laser with large emitting area |
US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
JPS5674983A (en) * | 1979-11-26 | 1981-06-20 | Nec Corp | Semiconductor laser |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
US4429397A (en) | 1980-06-26 | 1984-01-31 | Nippon Electric Co., Ltd. | Buried heterostructure laser diode |
GB2129211B (en) * | 1982-10-21 | 1987-01-14 | Rca Corp | Semiconductor laser and a method of making same |
JPH0732278B2 (ja) * | 1982-10-27 | 1995-04-10 | アールシーエー コーポレーシヨン | 半導体レーザ |
US4623427A (en) * | 1983-08-12 | 1986-11-18 | Hewlett-Packard Company | Means and method for a self-aligned multilayer laser epitaxy structure device |
JPS61135184A (ja) * | 1984-12-05 | 1986-06-23 | Sharp Corp | 半導体レ−ザ装置 |
US5087587A (en) * | 1986-02-13 | 1992-02-11 | Sharp Kabushiki Kaisha | Epitaxial growth process for the production of a window semiconductor laser |
DE102011075502A1 (de) * | 2011-05-09 | 2012-11-15 | Forschungsverbund Berlin E.V. | Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3859178A (en) * | 1974-01-17 | 1975-01-07 | Bell Telephone Labor Inc | Multiple anodization scheme for producing gaas layers of nonuniform thickness |
US3883821A (en) * | 1974-01-17 | 1975-05-13 | Bell Telephone Labor Inc | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
JPS52127085A (en) * | 1976-04-16 | 1977-10-25 | Hitachi Ltd | Semiconductor laser |
-
1977
- 1977-08-15 US US05/824,690 patent/US4166253A/en not_active Expired - Lifetime
-
1978
- 1978-05-10 GB GB18837/78A patent/GB1587008A/en not_active Expired
- 1978-06-14 CA CA305,456A patent/CA1096962A/fr not_active Expired
- 1978-07-05 FR FR7820730A patent/FR2400784A1/fr active Granted
- 1978-07-25 JP JP9006478A patent/JPS5432284A/ja active Granted
- 1978-07-26 IT IT26105/78A patent/IT1112289B/it active
- 1978-08-09 DE DE2834922A patent/DE2834922C2/de not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0143460A2 (fr) * | 1983-11-30 | 1985-06-05 | Sharp Kabushiki Kaisha | Dispositif laser à semi-conducteur et son procédé de fabrication |
EP0143460A3 (en) * | 1983-11-30 | 1987-05-13 | Sharp Kabushiki Kaisha | Semiconductor laser device and production method thereof |
US4937836A (en) * | 1983-11-30 | 1990-06-26 | Sharp Kabushiki Kaisha | Semiconductor laser device and production method therefor |
Also Published As
Publication number | Publication date |
---|---|
DE2834922C2 (de) | 1984-07-19 |
CA1096962A (fr) | 1981-03-03 |
JPS5432284A (en) | 1979-03-09 |
FR2400784B1 (fr) | 1980-03-14 |
IT7826105A0 (it) | 1978-07-26 |
DE2834922A1 (de) | 1979-03-01 |
GB1587008A (en) | 1981-03-25 |
JPS5711516B2 (fr) | 1982-03-04 |
IT1112289B (it) | 1986-01-13 |
US4166253A (en) | 1979-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |