JPS5655080A - Germanium avalanche photodiode - Google Patents

Germanium avalanche photodiode

Info

Publication number
JPS5655080A
JPS5655080A JP13085779A JP13085779A JPS5655080A JP S5655080 A JPS5655080 A JP S5655080A JP 13085779 A JP13085779 A JP 13085779A JP 13085779 A JP13085779 A JP 13085779A JP S5655080 A JPS5655080 A JP S5655080A
Authority
JP
Japan
Prior art keywords
type layer
density
layer
light
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13085779A
Other languages
Japanese (ja)
Inventor
Hiroaki Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13085779A priority Critical patent/JPS5655080A/en
Publication of JPS5655080A publication Critical patent/JPS5655080A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a germanium avalanche photodiode which incorporates high quantum efficiency and low noise amplification by forming a part for detecting a light with a high density n type layer, a low density n type layer and a p type layer which forms junction detecting the low density n type layer and light. CONSTITUTION:A part for detecting a light is formed of a high density n type layer 1, a low density n type layer 14 and a p type layer 2 forming a junction 8 for detecting the low density n type layer 14 and the light along the incident light 7. For example, there are formed the high density layer 1 having 10<19>-10<20>/cm<3> of impurity density and 0.3-0.4mum of thickness, the layer 14 having 10<17>/cm<3> of impurity density and sequentially reducing in density in depth direction with a thickness of 2-3mum, the layer 3 of guard ring, and the layer 6 of preventing reflection of the light. A reverse voltage is applied to the junction 8 through the electrodes 4, 5 forming ohmic contact with the layers 1 and 2 respectively in operation.
JP13085779A 1979-10-12 1979-10-12 Germanium avalanche photodiode Pending JPS5655080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13085779A JPS5655080A (en) 1979-10-12 1979-10-12 Germanium avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13085779A JPS5655080A (en) 1979-10-12 1979-10-12 Germanium avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5655080A true JPS5655080A (en) 1981-05-15

Family

ID=15044311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13085779A Pending JPS5655080A (en) 1979-10-12 1979-10-12 Germanium avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5655080A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076143A2 (en) * 1981-09-30 1983-04-06 Fujitsu Limited Avalanche photodiode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076143A2 (en) * 1981-09-30 1983-04-06 Fujitsu Limited Avalanche photodiode

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