JPS5674983A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5674983A
JPS5674983A JP15267279A JP15267279A JPS5674983A JP S5674983 A JPS5674983 A JP S5674983A JP 15267279 A JP15267279 A JP 15267279A JP 15267279 A JP15267279 A JP 15267279A JP S5674983 A JPS5674983 A JP S5674983A
Authority
JP
Japan
Prior art keywords
stripe
layer
thickness
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15267279A
Other languages
Japanese (ja)
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15267279A priority Critical patent/JPS5674983A/en
Publication of JPS5674983A publication Critical patent/JPS5674983A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Abstract

PURPOSE:To obtain the laser which makes oscillation with a single fundamental horizontal mode and gives high output by regulating the height of a stripe when the stripe-type semiconductor laser is prepared by forming the mesa-form stripe on the surface of the substrate of a semiconductor compound and further providing thereon an active layer through the intermediary of a guide layer. CONSTITUTION:On the surface of the N type InP substrate 1 is formed the mesa- type stripe 10, whereon the guide layer 2 is made to grow with the surface being made flat, and further thereon the thin active layer 3 is formed by laminating a P type InP layer 4. Next, an SiO2 film 6 is fitted on the layer 4, a window is opened in the film in correspondence with the stripe 10, and an electrode 7 on P side is provided in extension on to the film 6, while on the back surface of the substrate 1 an electrode 5 on N side is fitted. In this constitution, the thickness of the guide layer 2 positioned on the stripe 10 and the thickness of the other part thereof are set in the relation regulated as 0<=t1<t2, where t1 is the former thickness and t2 is the latter. Thus, the distribution of the strength of light in the direction of the thickness of layer on the stripe 10 is made to be 8, while the distribution of that in other regions to be 9.
JP15267279A 1979-11-26 1979-11-26 Semiconductor laser Pending JPS5674983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15267279A JPS5674983A (en) 1979-11-26 1979-11-26 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15267279A JPS5674983A (en) 1979-11-26 1979-11-26 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5674983A true JPS5674983A (en) 1981-06-20

Family

ID=15545572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15267279A Pending JPS5674983A (en) 1979-11-26 1979-11-26 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5674983A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432284A (en) * 1977-08-15 1979-03-09 Ibm Double heteroostructure laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432284A (en) * 1977-08-15 1979-03-09 Ibm Double heteroostructure laser

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