KR950032541A - 보호 피복물을 전자 기판에 형성시키는 방법 - Google Patents

보호 피복물을 전자 기판에 형성시키는 방법 Download PDF

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Publication number
KR950032541A
KR950032541A KR1019950006962A KR19950006962A KR950032541A KR 950032541 A KR950032541 A KR 950032541A KR 1019950006962 A KR1019950006962 A KR 1019950006962A KR 19950006962 A KR19950006962 A KR 19950006962A KR 950032541 A KR950032541 A KR 950032541A
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KR
South Korea
Prior art keywords
substrate
electronic substrate
coating
coated
polysilazane
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KR1019950006962A
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English (en)
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앤드류 할러스카 로렌
윈톤 마이클 케이쓰
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
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Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR950032541A publication Critical patent/KR950032541A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

본 발명은 보호피복물을 전자 기판에 형성시키는 방법 및 이에 의해 피복된 기판에 관한 것이다. 본 방법은 폴리실라잔과 충전제를 포함하는 피복물을 기판에 도포한 다음, 폴리실라잔이 세라믹으로 전환되기에 충분한 온도에서 피복된 기판을 가열하는 것을 포함한다.

Description

보호 피복물을 전자 기판에 형성시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 폴리실라잔과 충전제를 포함하는 피복 조성물을 전자 기판에 도포하고, 피복된 기판을 50 내지 1,000°C의 온도 범위에서 6시간 이하 동안 가열함으로써 피복 조성물을 세라믹으로 전환시킴을 포함하여,보호 피복물을 전자 기판에 형성시키는 방법.
  2. 제1항에 있어서, 피복 조성물이, 기판을 용매, 폴리실라잔 및 충전제를 포함하는 액체 혼합물로 기판을 피복시킨 다음 용매를 증발시키는 방법에 의해 기판에 도포되는 방법.
  3. 제2항에 있어서, 피복된 기판이 공기, O2, 산소 플라즈마, 불활성 기체, 질소, 암모니아, 아민, 수분 및 N2O 중에서 선택된 하나 이상의 화합물을 함유하는 환경에서 가열되는 방법.
  4. 제1항에 있어서, 세라믹 피복물의 유전상수가 8 미만인 방법.
  5. 제1항에 있어서,세라믹 피복물의 유전상수가12를 초과하는 방법.
  6. 제1항의 방법에 의해 피복된 전자 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950006962A 1994-04-01 1995-03-30 보호 피복물을 전자 기판에 형성시키는 방법 KR950032541A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/221597 1994-04-01
US08/221,597 US5436083A (en) 1994-04-01 1994-04-01 Protective electronic coatings using filled polysilazanes

Publications (1)

Publication Number Publication Date
KR950032541A true KR950032541A (ko) 1995-12-22

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KR1019950006962A KR950032541A (ko) 1994-04-01 1995-03-30 보호 피복물을 전자 기판에 형성시키는 방법

Country Status (4)

Country Link
US (1) US5436083A (ko)
EP (1) EP0675537A3 (ko)
JP (1) JPH0851271A (ko)
KR (1) KR950032541A (ko)

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Publication number Publication date
US5436083A (en) 1995-07-25
EP0675537A3 (en) 1997-12-29
EP0675537A2 (en) 1995-10-04
JPH0851271A (ja) 1996-02-20

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