KR830006116A - 폴리머 열화에 의한 실리콘 금속의 제법 - Google Patents

폴리머 열화에 의한 실리콘 금속의 제법 Download PDF

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Publication number
KR830006116A
KR830006116A KR1019810002444A KR810002444A KR830006116A KR 830006116 A KR830006116 A KR 830006116A KR 1019810002444 A KR1019810002444 A KR 1019810002444A KR 810002444 A KR810002444 A KR 810002444A KR 830006116 A KR830006116 A KR 830006116A
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KR
South Korea
Prior art keywords
silicon metal
substrate
manufacturing
molecular weight
polymer deterioration
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Application number
KR1019810002444A
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English (en)
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KR840000958B1 (ko
Inventor
헨리 골 쥬니어 죤
리챠드 웨인버그 도날드
Original Assignee
해리 디.딩맨
다우코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 해리 디.딩맨, 다우코닝 코포레이션 filed Critical 해리 디.딩맨
Publication of KR830006116A publication Critical patent/KR830006116A/ko
Application granted granted Critical
Publication of KR840000958B1 publication Critical patent/KR840000958B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

폴리머 열화에 의한 실리콘 금속의 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 분자량이 Si2Cl6의 분자량보다 큰 폴리클로로실란을 불활성대기 또는 진공중에 500℃내지 1450℃로 열분해하여 실리콘금속을 제조하는 방법.
  2. (Ⅰ)분자량이 Si2cl6의 분자량보다 큰 폴리클로로실란으로 기질을 처리하고
    (Ⅱ)이 기질을 500℃내지 1450℃의 온도로 실리콘금속이 기질사에 형성되기에 충분한 시간동안 가열하고
    (Ⅲ)기질을 실온까지 냉각시켜 실리콘금속으로 코팅된 기질을 수득함을 특징으로하여 기질상에 실리콘금속을 코팅하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810002444A 1980-07-07 1981-07-06 실리콘 금속으로 기질을 코팅하는 방법 KR840000958B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US166201 1980-07-07
US06/166,201 US4374182A (en) 1980-07-07 1980-07-07 Preparation of silicon metal through polymer degradation

Publications (2)

Publication Number Publication Date
KR830006116A true KR830006116A (ko) 1983-09-17
KR840000958B1 KR840000958B1 (ko) 1984-07-02

Family

ID=22602230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810002444A KR840000958B1 (ko) 1980-07-07 1981-07-06 실리콘 금속으로 기질을 코팅하는 방법

Country Status (12)

Country Link
US (1) US4374182A (ko)
JP (1) JPS5756313A (ko)
KR (1) KR840000958B1 (ko)
AU (1) AU544798B2 (ko)
BE (1) BE889523A (ko)
CA (1) CA1162385A (ko)
CH (1) CH649069A5 (ko)
DE (1) DE3126240C2 (ko)
FR (1) FR2486057B1 (ko)
GB (1) GB2079736B (ko)
IT (1) IT1211065B (ko)
SE (1) SE450377B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839797B1 (ko) * 2007-03-13 2008-06-19 (주) 태양기전 컬러 박막 및 이의 제조 방법

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4537942A (en) * 1984-02-10 1985-08-27 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4611035A (en) * 1984-02-10 1986-09-09 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4704444A (en) * 1984-02-10 1987-11-03 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4683147A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method of forming deposition film
US4683144A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method for forming a deposited film
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
EP0264722A3 (en) * 1986-10-09 1989-07-12 Mitsubishi Materials Corporation Process for preparing amorphous silicon
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
DE102005024041A1 (de) * 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
DE102007000841A1 (de) * 2007-10-09 2009-04-16 Wacker Chemie Ag Verfahren zur Herstellung von hochreinem Hexachlordisilan
DE102008025264A1 (de) * 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Granulares Silicium
DE102008025260B4 (de) 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung
US20110305619A1 (en) * 2008-05-27 2011-12-15 Spawnt Private S.A.R.L Silicon Containing Halogenide, Method for Producing the Same, and Use of the Same
DE102008025261B4 (de) * 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
US20110129784A1 (en) * 2009-11-30 2011-06-02 James Crawford Bange Low thermal expansion doped fused silica crucibles
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
DE102009056436B4 (de) * 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Chloridhaltiges Silicium
DE102010025948A1 (de) 2010-07-02 2012-01-05 Spawnt Private S.À.R.L. Polysilane mittlerer Kettenlänge und Verfahren zu deren Herstellung
DE102013207441A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren zur Herstellung von Hexachlordisilan durch Spaltung von höheren Polychlorsilanen wie Octachlortrisilan
DE102013016986A1 (de) 2013-10-15 2015-04-16 Psc Polysilane Chemicals Gmbh Elektronenstrahlverfahren zur Modifizierung von Halogensilangemischen
DE102013021306A1 (de) * 2013-12-19 2015-06-25 Johann Wolfgang Goethe-Universität Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen
DE102014007766A1 (de) 2014-05-21 2015-11-26 Psc Polysilane Chemicals Gmbh Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
DE102014007767A1 (de) 2014-05-21 2015-11-26 Psc Polysilane Chemicals Gmbh Verfahren und Vorrichtung zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
DE102014118658B4 (de) 2014-12-15 2020-12-31 Evonik Operations Gmbh Verfahren zum Herstellen von perhalogeniertem Hexasilan-Anion
EP3233729B1 (de) 2014-12-15 2019-08-21 Evonik Degussa GmbH Verfahren zum herstellen von perhalogeniertem cyclohexasilan-anion
CN105777792B (zh) * 2016-04-21 2018-08-21 东南大学 一种季铵盐化荧光硅点及其制备方法与应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH175201A (fr) * 1932-01-07 1935-02-15 Soc D Expl Des Brevets Lucien Installation pour amortir les chocs pour véhicules à moteur.
GB702349A (en) * 1950-07-08 1954-01-13 British Thomson Houston Co Ltd Improvements in and relating to the preparation of chloropolysilanes
US2820698A (en) * 1954-06-25 1958-01-21 Du Pont Process for purifying silicon halide
US2844441A (en) * 1954-11-26 1958-07-22 Du Pont Process of purifying liquid silicon halide
DE1169904B (de) * 1955-05-17 1964-05-14 Siemens Ag Verfahren zum Herstellen von Silicium
US2840489A (en) * 1956-01-17 1958-06-24 Owens Illinois Glass Co Process for the controlled deposition of silicon dihalide vapors onto selected surfaces
US2944874A (en) * 1956-12-14 1960-07-12 Raytheon Co Preparation of silicon
US2916359A (en) * 1956-12-14 1959-12-08 Raytheon Co Preparation of substantially pure silicon
DE1161868B (de) * 1958-07-15 1964-01-30 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinen Siliciumhalogeniden
US4070444A (en) * 1976-07-21 1978-01-24 Motorola Inc. Low cost, high volume silicon purification process
US4138509A (en) * 1977-12-23 1979-02-06 Motorola, Inc. Silicon purification process
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4230773A (en) * 1978-12-04 1980-10-28 International Business Machines Corporation Decreasing the porosity and surface roughness of ceramic substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839797B1 (ko) * 2007-03-13 2008-06-19 (주) 태양기전 컬러 박막 및 이의 제조 방법

Also Published As

Publication number Publication date
FR2486057B1 (fr) 1987-06-12
JPS5756313A (en) 1982-04-03
US4374182A (en) 1983-02-15
BE889523A (fr) 1982-01-06
KR840000958B1 (ko) 1984-07-02
JPS6116729B2 (ko) 1986-05-01
DE3126240A1 (de) 1982-05-19
IT8122366A0 (it) 1981-06-17
IT1211065B (it) 1989-09-29
AU7260981A (en) 1982-01-14
SE8103957L (sv) 1982-01-08
AU544798B2 (en) 1985-06-13
CA1162385A (en) 1984-02-21
SE450377B (sv) 1987-06-22
GB2079736B (en) 1984-02-15
DE3126240C2 (de) 1983-09-08
CH649069A5 (de) 1985-04-30
FR2486057A1 (fr) 1982-01-08
GB2079736A (en) 1982-01-27

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