KR840003530A - 단결정막의 제조 방법 - Google Patents

단결정막의 제조 방법 Download PDF

Info

Publication number
KR840003530A
KR840003530A KR1019830000220A KR830000220A KR840003530A KR 840003530 A KR840003530 A KR 840003530A KR 1019830000220 A KR1019830000220 A KR 1019830000220A KR 830000220 A KR830000220 A KR 830000220A KR 840003530 A KR840003530 A KR 840003530A
Authority
KR
South Korea
Prior art keywords
temperature
single crystal
heat treatment
ultra
high vacuum
Prior art date
Application number
KR1019830000220A
Other languages
English (en)
Other versions
KR900007901B1 (ko
Inventor
마시오(외6) 다무라
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840003530A publication Critical patent/KR840003530A/ko
Application granted granted Critical
Publication of KR900007901B1 publication Critical patent/KR900007901B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/123—Polycrystalline diffuse anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Abstract

내용 없음

Description

단결정막의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명을 설명하기 위한 도면.

Claims (8)

  1. 하기 공정을 포함하는 단결정막의 제조방법. (가). 단결정 기판 표면에 바라는 평면 형상의 절연막을 피착하는 공정. (나). 상기 단결정 기판의 노출된 표면 및 상기 절연막을 연속하여 씨운 비정질 또는 다결정 막을 초고 진공 분위기 중에서 피착하는 공정. (다). 열처리를 하여 상기 비정질 또는 다결정막을 고상에피백설 성장에 의하여 단결정화 하는 공정.
  2. 청구범위 1에 있어서 상기 초고 진공의 공기 압력을 약 10--7Torr이하인것.
  3. 청구 범위 1 또는 2에 있어서 상기 공정(다)은 상기 초고진공 분위기내에서 행하여지는 것.
  4. 청구 범위 3에 있어서 상기 열처리의 온도를 약 500∼1,000℃인 것.
  5. 청구범위 3에 있어서 상기 열처리의 온도는 약 500∼1,200℃인 것.
  6. 청구범위 1 또는 2에 있어서 상기 공정(가)은 상기 초고진공 분위기 내에 있어서 행하여지는 제1의 열처리와 비상화성 분위기내에 있어서 행하여지는 제2의 열처리를 포함하는 것.
  7. 청구범위 6에 있어서 상기 제1의 열처리의 온도는 약 200℃ 이상이고, 상기 제2의 열처리의 온도는 약 500∼1,000℃인것.
  8. 청구 범위 6에 있어서 상기 제1의 열처리의 온도는 약 200℃ 이상이고, 상기 제2의 열처리 온도는 약 500°∼1,200℃인 것.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830000220A 1982-01-29 1983-01-21 단결정박막의 제조방법 KR900007901B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11635 1982-01-29
JP57011635A JPS58130517A (ja) 1982-01-29 1982-01-29 単結晶薄膜の製造方法
JP57-11635 1982-01-29

Publications (2)

Publication Number Publication Date
KR840003530A true KR840003530A (ko) 1984-09-08
KR900007901B1 KR900007901B1 (ko) 1990-10-22

Family

ID=11783399

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830000220A KR900007901B1 (ko) 1982-01-29 1983-01-21 단결정박막의 제조방법

Country Status (6)

Country Link
US (1) US4565584A (ko)
EP (1) EP0085406B1 (ko)
JP (1) JPS58130517A (ko)
KR (1) KR900007901B1 (ko)
CA (1) CA1209017A (ko)
DE (1) DE3363846D1 (ko)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3177084D1 (en) * 1980-04-10 1989-09-21 Massachusetts Inst Technology Method of producing sheets of crystalline material
FR2547954B1 (fr) * 1983-06-21 1985-10-25 Efcis Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice
IT1213192B (it) * 1984-07-19 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'.
FR2571544B1 (fr) * 1984-10-05 1987-07-31 Haond Michel Procede de fabrication d'ilots de silicium monocristallin isoles electriquement les uns des autres
FR2582862B1 (fr) * 1985-05-30 1987-07-17 Thomson Csf Capteur a effet magneto-resistif lineaire, son procede de realisation et son application dans un detecteur de domaines magnetiques
JPS6265317A (ja) * 1985-09-17 1987-03-24 Mitsubishi Electric Corp 半導体単結晶膜形成のためのウエハ構造
DE3685732T2 (de) * 1985-12-20 1993-01-21 Agency Ind Science Techn Verfahren zur herstellung einer monokristallinen duennen schicht.
JPS62206816A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6310573A (ja) * 1986-07-02 1988-01-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4902642A (en) * 1987-08-07 1990-02-20 Texas Instruments, Incorporated Epitaxial process for silicon on insulator structure
US4914053A (en) * 1987-09-08 1990-04-03 Texas Instruments Incorporated Heteroepitaxial selective-area growth through insulator windows
DE3741671A1 (de) * 1987-12-09 1989-06-22 Asea Brown Boveri Cvd-verfahren zur randpassivierung bei halbleiterbauelementen
JP2751237B2 (ja) * 1988-09-07 1998-05-18 ソニー株式会社 集積回路装置及び集積回路装置の製造方法
JPH02106034A (ja) * 1988-10-14 1990-04-18 Sanyo Electric Co Ltd Ｓｏｉ構造の形成方法
FR2640428B1 (fr) * 1988-12-09 1992-10-30 Thomson Csf Procede de durcissement vis-a-vis des rayonnements ionisants de composants electroniques actifs, et composants durcis de grandes dimensions
SG108807A1 (en) 1989-02-14 2005-02-28 Seiko Epson Corp A semiconductor device and its manufacturing method
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
US5254208A (en) * 1990-07-24 1993-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
JP3156878B2 (ja) * 1992-04-30 2001-04-16 株式会社東芝 半導体装置およびその製造方法
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
DE69428387T2 (de) * 1993-02-15 2002-07-04 Semiconductor Energy Lab Herstellungsverfahren für eine kristallisierte Halbleiterschicht
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6867432B1 (en) 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6501094B1 (en) 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
CA2263339C (en) * 1997-06-27 2002-07-23 Kichiya Tanino Single crystal sic and process for preparing the same
JP2002030770A (ja) * 2000-05-10 2002-01-31 Nkk Steel Sheet & Strip Corp 屋根板、ハゼ葺き屋根、太陽電池モジュール板を取りつけたハゼ葺き屋根および太陽電池モジュール板の取りつけ、取り外し方法
US6274463B1 (en) * 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
US6746933B1 (en) 2001-10-26 2004-06-08 International Business Machines Corporation Pitcher-shaped active area for field effect transistor and method of forming same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
CN100350617C (zh) 2002-03-05 2007-11-21 株式会社半导体能源研究所 半导体元件和使用半导体元件的半导体装置
JP4603845B2 (ja) * 2004-10-12 2010-12-22 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
ATE492510T1 (de) * 2005-01-31 2011-01-15 Freescale Semiconductor Inc Verfahren zur herstellung einer soi-struktur
KR100775963B1 (ko) * 2006-07-12 2007-11-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP6174943B2 (ja) * 2013-08-22 2017-08-02 東京エレクトロン株式会社 凹部を充填する方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472954A (en) * 1977-11-23 1979-06-11 Noboru Tsuya Semiconductor thin film and method of fabricating same
JPS5544789A (en) * 1978-09-27 1980-03-29 Nec Corp Formation of mono-crystal semiconductor layer
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4487639A (en) * 1980-09-26 1984-12-11 Texas Instruments Incorporated Localized epitaxy for VLSI devices
US4319954A (en) * 1981-02-27 1982-03-16 Rca Corporation Method of forming polycrystalline silicon lines and vias on a silicon substrate
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
JPS5861622A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 単結晶薄膜の製造方法
JPS5893221A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体薄膜構造とその製造方法
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4444620A (en) * 1983-09-12 1984-04-24 Bell Telephone Laboratories, Incorporated Growth of oriented single crystal semiconductor on insulator

Also Published As

Publication number Publication date
JPH0514413B2 (ko) 1993-02-25
EP0085406A1 (en) 1983-08-10
JPS58130517A (ja) 1983-08-04
EP0085406B1 (en) 1986-06-04
CA1209017A (en) 1986-08-05
US4565584A (en) 1986-01-21
DE3363846D1 (en) 1986-07-10
KR900007901B1 (ko) 1990-10-22

Similar Documents

Publication Publication Date Title
KR840003530A (ko) 단결정막의 제조 방법
JPS5550663A (en) Semiconductor device and method of fabricating the same
ATE440385T1 (de) Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen
KR970067542A (ko) 반도체장치의 제조방법
KR950009904A (ko) 입자 크기가 큰 다결정 규소 박막의 제조 방법
KR900017110A (ko) 반도체장치의 제조방법
SE8705079D0 (sv) Dopade polykristallina kiselskikt for halvledarorgan
EP1168466A3 (en) Method for manufacturing semiconductors thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured
JPS5713760A (en) Semiconductor device and manufacture thereof
JPS53135571A (en) Vapor phase growth method for semiconductor
EP0056737A3 (en) Method of manufacturing a semiconductor device using molecular beam epitaxy
JPS60178618A (ja) 薄膜形成法
JPS6477924A (en) Manufacture of semiconductor device
KR920017171A (ko) 바이폴라 트랜지스터의 배리드층 형성방법
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS56162841A (en) Forming method for insulating film of compound semiconductor
JPS5656626A (en) Manufacture of 3-5 group compound semiconductor thin film
JPS57192017A (en) Epitaxial growing method
KR880001178A (ko) 메탈테이프(Metal Tape)용 동박막을 제조하는 방법
KR950004582A (ko) 박막트랜지스터의 제조방법
JPS57196546A (en) Material for electronic element having multilayer structure of semiconductor and insulator
JPS5898921A (ja) 配線電極形成方法
KR930024206A (ko) 비정질 실리콘 박막트랜지스터의 어닐링 방법
KR920018829A (ko) 인-사이투 인 도핑한 폴리실리콘 필름 증착시의 스텝 카버리지 개선방법
JPS5272162A (en) Production of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20021007

Year of fee payment: 13

EXPY Expiration of term