KR950009904A - 입자 크기가 큰 다결정 규소 박막의 제조 방법 - Google Patents
입자 크기가 큰 다결정 규소 박막의 제조 방법 Download PDFInfo
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- KR950009904A KR950009904A KR1019930017870A KR930017870A KR950009904A KR 950009904 A KR950009904 A KR 950009904A KR 1019930017870 A KR1019930017870 A KR 1019930017870A KR 930017870 A KR930017870 A KR 930017870A KR 950009904 A KR950009904 A KR 950009904A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- silicon thin
- polycrystalline silicon
- particle size
- substrate
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000002245 particle Substances 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract 4
- 239000011521 glass Substances 0.000 claims abstract 3
- 239000010453 quartz Substances 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000010790 dilution Methods 0.000 claims 1
- 239000012895 dilution Substances 0.000 claims 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
본 발명에 기판상에 비정질 규소 박막을 증착시킨 후, 이를 특정 압력 하에 저온에서 열처리하여 고상 결정화시키는 것으로 이루어진 입자 크기가 큰 다결정 규소 박막을 제조하는 방법이 기재되어 있다. 본 발명의 방법은 결정 성장 온도를 크게 낮춤으로써 값비싼 석영 대신 값싼 유리 등의 기판을 사용하고, 고가의 Si2H6가스 대신 SiH4가스를 사용함으로써 다결정 규소 박막의 생산 단가를 크게 낮출 수 있을 뿐 만 아니라, 입자 크기가 150μ이상인 다결정 규소 박막을 제공함으로써 다결정 규소 박막의 전자 및 정공의 이동도를 단결정 수준으로 향상시켜 현재 어려움을 겪고 있는 LCD용 TFT나 SRAM용 TFT등의 고성능 SOI소자 개발을 획기적으로 진전시킬 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 다결정 규소 박막 제조 방법의 제조 공정을 도시한 흐름도,
제2도는 본 발명의 방법으로 제조된 다결정 규소 박막의 증착 온도에 다른 입자 크기를 나타내는 그래프,
제3도는 종래의 방법으로 제조된 다결정 규소 박막의 증착 온도에 따른 입자 크기를 나타내는 그래프,
제4a도는 본 발명의 방법으로 제조된 다결정 규소 박막(두께 약 1,000Å)의 사진,
제4b도는 종래의 방법으로 제조된 다결정 규소 박막(두께 약 1,000Å)의 사진.
Claims (6)
- 기판 상에 비정질 규소 박막을 PECVD, LPCVD 등의 공지 방법으로 증착시킨 후, 10-9내지 103토르의 압력 범위 하에 300내지 600℃의 온도 범위에서 열처리함으로써 고상 결정화시키는 것을 특징으로 하는 입자 크기가 큰 다결정 규소박막의 제조 방법.
- 제1항에 있어서, 상기 기판이 유리판, 석영판, Si 웨이퍼, 또는 비정질(SiO2, 질화규소, 실리콘 옥시-니트라이드, 산화 탄달)이 입혀진 유리판, 석영판 또는 Si 웨이퍼인 것인 방법.
- 제1항에 있어서, 상기 규소 박막의 증착시에 SiH4, Si2H6또는 이들 기체를 Ar, He, H2또는 N2가스로 희석시킨 것을 원료 기체로 사용하는 것인 방법.
- 제1항에 있어서, 증착된 규소 박막이 10-2토르의 압력에서 N2또는 Ar기체분위기 하에 500℃에서 열처리하여 고상 결정화되는 것인 방법.
- 제1항 기재의 방법에 따라 제조한, 입자 크기가 150㎛이상인 다결정 규소 박막.
- 제5항에 있어서, 상기 다결정 규소 박막이 SOI, TFT, 태양 전지 등의 제조에 사용되는 것인 다결정 규소 박막.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930017870A KR970006723B1 (ko) | 1993-09-07 | 1993-09-07 | 입자 크기가 큰 다결정 규소 박막의 제조방법 |
US08/282,643 US5470619A (en) | 1993-09-07 | 1994-07-29 | Method of the production of polycrystalline silicon thin films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930017870A KR970006723B1 (ko) | 1993-09-07 | 1993-09-07 | 입자 크기가 큰 다결정 규소 박막의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950009904A true KR950009904A (ko) | 1995-04-26 |
KR970006723B1 KR970006723B1 (ko) | 1997-04-29 |
Family
ID=19363019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930017870A KR970006723B1 (ko) | 1993-09-07 | 1993-09-07 | 입자 크기가 큰 다결정 규소 박막의 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5470619A (ko) |
KR (1) | KR970006723B1 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2900229B2 (ja) | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP3174486B2 (ja) * | 1995-09-08 | 2001-06-11 | シャープ株式会社 | 太陽電池およびその製造方法 |
AU2452697A (en) * | 1996-04-10 | 1997-10-29 | Penn State Research Foundation, The | Modifying solid crystallization kinetics for a-si films |
US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
US5773329A (en) * | 1996-07-24 | 1998-06-30 | International Business Machines Corporation | Polysilicon grown by pulsed rapid thermal annealing |
US5707895A (en) * | 1996-10-21 | 1998-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin film transistor performance enhancement by water plasma treatment |
US5908307A (en) * | 1997-01-31 | 1999-06-01 | Ultratech Stepper, Inc. | Fabrication method for reduced-dimension FET devices |
JP3027968B2 (ja) * | 1998-01-29 | 2000-04-04 | 日新電機株式会社 | 成膜装置 |
US6294219B1 (en) * | 1998-03-03 | 2001-09-25 | Applied Komatsu Technology, Inc. | Method of annealing large area glass substrates |
US6197669B1 (en) * | 1999-04-15 | 2001-03-06 | Taiwan Semicondcutor Manufacturing Company | Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process |
DE19935046C2 (de) | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
JP3806751B2 (ja) * | 2000-05-23 | 2006-08-09 | 独立行政法人科学技術振興機構 | 量子サイズ効果型微小電子銃の製造方法 |
US6726955B1 (en) * | 2000-06-27 | 2004-04-27 | Applied Materials, Inc. | Method of controlling the crystal structure of polycrystalline silicon |
KR100578105B1 (ko) * | 2003-12-30 | 2006-05-10 | 한국과학기술원 | 알루미늄 할로겐 화합물과 이종 금속 화합물의 혼합분위기를 이용한 다결정 규소박막의 제조방법 |
FR2950082B1 (fr) * | 2009-09-14 | 2011-10-14 | Commissariat Energie Atomique | Procede de recristallisation d'une couche |
CN111834207B (zh) * | 2019-04-22 | 2023-06-16 | 上海新微技术研发中心有限公司 | 一种沉积多晶硅薄膜的方法 |
CN113913791B (zh) * | 2021-09-29 | 2024-03-01 | 湖南红太阳光电科技有限公司 | 一种多层非晶硅薄膜的制备方法及太阳能电池 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4406709A (en) * | 1981-06-24 | 1983-09-27 | Bell Telephone Laboratories, Incorporated | Method of increasing the grain size of polycrystalline materials by directed energy-beams |
EP0307109A1 (en) * | 1987-08-24 | 1989-03-15 | Canon Kabushiki Kaisha | Method for forming semiconductor crystal and semiconductor crystal article obtained by said method |
WO1990003453A1 (en) * | 1988-09-28 | 1990-04-05 | Oki Electric Industry Co., Ltd. | Process for forming superconducting thin film |
JPH03256333A (ja) * | 1990-03-07 | 1991-11-15 | Hitachi Ltd | 半導体装置の製造方法 |
US5318919A (en) * | 1990-07-31 | 1994-06-07 | Sanyo Electric Co., Ltd. | Manufacturing method of thin film transistor |
JP2856533B2 (ja) * | 1990-10-05 | 1999-02-10 | 株式会社東芝 | 多結晶シリコン薄膜の製造方法 |
JPH05343316A (ja) * | 1991-09-30 | 1993-12-24 | Nec Corp | 半導体装置の製造方法 |
-
1993
- 1993-09-07 KR KR1019930017870A patent/KR970006723B1/ko not_active IP Right Cessation
-
1994
- 1994-07-29 US US08/282,643 patent/US5470619A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR970006723B1 (ko) | 1997-04-29 |
US5470619A (en) | 1995-11-28 |
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