ATE440385T1 - Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen - Google Patents

Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen

Info

Publication number
ATE440385T1
ATE440385T1 AT02785901T AT02785901T ATE440385T1 AT E440385 T1 ATE440385 T1 AT E440385T1 AT 02785901 T AT02785901 T AT 02785901T AT 02785901 T AT02785901 T AT 02785901T AT E440385 T1 ATE440385 T1 AT E440385T1
Authority
AT
Austria
Prior art keywords
film
sub
cdte
cdcl
depositing
Prior art date
Application number
AT02785901T
Other languages
English (en)
Inventor
Nicola Romeo
Alessio Bosio
Alessandro Romeo
Original Assignee
Solar Systems & Equioments S R
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IT2001LU000008A external-priority patent/ITLU20010008A1/it
Priority claimed from ITLU20010011 external-priority patent/ITLU20010011A1/it
Priority claimed from ITLU20010012 external-priority patent/ITLU20010012A1/it
Application filed by Solar Systems & Equioments S R filed Critical Solar Systems & Equioments S R
Application granted granted Critical
Publication of ATE440385T1 publication Critical patent/ATE440385T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
AT02785901T 2001-10-05 2002-10-04 Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen ATE440385T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IT2001LU000008A ITLU20010008A1 (it) 2001-10-05 2001-10-05 Procedura per realizzare un contatto non rettificante su film cdte utilizzati per fabbricare celle solari a film sottili tipo cdte/cds.
ITLU20010011 ITLU20010011A1 (it) 2001-10-17 2001-10-17 Un nuovo tipo di sorgente per depositare film sottili di cdte e cds mediante css (close-spaced-sublimation).
ITLU20010012 ITLU20010012A1 (it) 2001-10-17 2001-10-17 Preparazione di un ossido trasparente e conduttore (tco) adatto alla produzione su larga scala di celle solari a film sottili tipo cdte/cds.
PCT/IT2002/000634 WO2003032406A2 (en) 2001-10-05 2002-10-04 A process for large-scale production of cdte/cds thin film solar cells

Publications (1)

Publication Number Publication Date
ATE440385T1 true ATE440385T1 (de) 2009-09-15

Family

ID=27274234

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02785901T ATE440385T1 (de) 2001-10-05 2002-10-04 Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen

Country Status (10)

Country Link
US (1) US7211462B2 (de)
EP (1) EP1433207B8 (de)
JP (1) JP4621427B2 (de)
AT (1) ATE440385T1 (de)
AU (1) AU2002349822B2 (de)
CA (1) CA2462590A1 (de)
DE (1) DE60233418D1 (de)
ES (1) ES2331606T3 (de)
PT (1) PT1433207E (de)
WO (1) WO2003032406A2 (de)

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US20070184573A1 (en) * 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
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US20080115821A1 (en) * 2006-11-22 2008-05-22 Li Xu Multilayer transparent conductive oxide for improved chemical processing
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WO2009058985A1 (en) 2007-11-02 2009-05-07 First Solar, Inc. Photovoltaic devices including doped semiconductor films
DE102008057075A1 (de) * 2007-11-22 2009-08-27 Antec Solar Gmbh Wirkungsgradoptimierte CdS/CdTe Module
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US8409407B2 (en) 2010-04-22 2013-04-02 Primestar Solar, Inc. Methods for high-rate sputtering of a compound semiconductor on large area substrates
US8361229B2 (en) 2010-04-22 2013-01-29 Primestar Solar, Inc. Seal configuration for a system for continuous deposition of a thin film layer on a substrate
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DE102010028277B4 (de) * 2010-04-27 2013-04-18 Calyxo Gmbh Verfahren und Vorrichtung zur Herstellung einer mit einem Halbleitermaterial beschichteten Glasscheibe und nach dem Verfahren erhältliche Solarzelle oder Solarmodul
US20110265874A1 (en) * 2010-04-29 2011-11-03 Primestar Solar, Inc. Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture
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US8187963B2 (en) * 2010-05-24 2012-05-29 EncoreSolar, Inc. Method of forming back contact to a cadmium telluride solar cell
US20110315220A1 (en) * 2010-06-29 2011-12-29 General Electric Company Photovoltaic cell and methods for forming a back contact for a photovoltaic cell
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CN104518044B (zh) * 2013-09-26 2019-07-23 中国建材国际工程集团有限公司 用来制造CdTe薄层太阳能电池的背接触层的方法
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CN106711242A (zh) * 2017-01-17 2017-05-24 中国科学技术大学 一种碲化镉薄膜太阳电池及其制备方法
CN111081812A (zh) * 2019-11-18 2020-04-28 深圳第三代半导体研究院 一种透明导电氧化物薄膜的制备方法及应用
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Also Published As

Publication number Publication date
DE60233418D1 (de) 2009-10-01
EP1433207A2 (de) 2004-06-30
EP1433207B8 (de) 2009-10-07
JP4621427B2 (ja) 2011-01-26
US7211462B2 (en) 2007-05-01
EP1433207B1 (de) 2009-08-19
PT1433207E (pt) 2009-11-24
AU2002349822B2 (en) 2007-11-15
ES2331606T3 (es) 2010-01-11
WO2003032406A3 (en) 2003-10-30
JP2005505938A (ja) 2005-02-24
US20040248340A1 (en) 2004-12-09
CA2462590A1 (en) 2003-04-17
WO2003032406A2 (en) 2003-04-17

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