WO2021177800A3 - 페로브스카이트 태양전지의 정공 수송층 제조 방법 - Google Patents

페로브스카이트 태양전지의 정공 수송층 제조 방법 Download PDF

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Publication number
WO2021177800A3
WO2021177800A3 PCT/KR2021/002789 KR2021002789W WO2021177800A3 WO 2021177800 A3 WO2021177800 A3 WO 2021177800A3 KR 2021002789 W KR2021002789 W KR 2021002789W WO 2021177800 A3 WO2021177800 A3 WO 2021177800A3
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Prior art keywords
solar cell
perovskite solar
substrate
thin film
transport layer
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PCT/KR2021/002789
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English (en)
French (fr)
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WO2021177800A2 (ko
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박찬희
이소연
이규현
장혁규
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주식회사 메카로에너지
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Publication of WO2021177800A2 publication Critical patent/WO2021177800A2/ko
Publication of WO2021177800A3 publication Critical patent/WO2021177800A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 페로브스카이트 태양전지의 정공 수송층(Hole Transport Layer, HTL)으로 요오드화구리 박막을 제조하는 태양전지의 정공수송층 제조 방법을 개시한다. 이 방법은, 페로브스카이트 태양전지 기판을 준비하여 챔버 내부에 장착하는 기판 준비단계, 페로브스카이트 태양전지 기판의 열처리 공정을 수행하는 전처리 공정 단계, 화학기상증착법(CVD)을 이용해 페로브스카이트 태양전지 기판에 요오드화구리 박막을 증착하여 정공 수송층을 생성하는 요오드화구리 박막 증착 단계, 및 요오드화구리 박막 증착된 페로브스카이트 태양전지 기판을 비진공 또는 진공 열처리 공정을 수행하는 후처리 공정 단계를 포함한다.
PCT/KR2021/002789 2020-03-06 2021-03-05 페로브스카이트 태양전지의 정공 수송층 제조 방법 WO2021177800A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0028297 2020-03-06
KR1020200028297A KR102566015B1 (ko) 2020-03-06 2020-03-06 페로브스카이트 태양전지의 정공 수송층 제조 방법

Publications (2)

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WO2021177800A2 WO2021177800A2 (ko) 2021-09-10
WO2021177800A3 true WO2021177800A3 (ko) 2021-10-28

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PCT/KR2021/002789 WO2021177800A2 (ko) 2020-03-06 2021-03-05 페로브스카이트 태양전지의 정공 수송층 제조 방법

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WO (1) WO2021177800A2 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150129034A1 (en) * 2012-05-18 2015-05-14 Isis Innovation Limited Optoelectronic device comprising perovskites
KR20160118847A (ko) * 2015-04-03 2016-10-12 한국과학기술연구원 무기 나노물질 기반 소수성 전하 수송체, 이의 제조방법 및 이를 포함하는 유무기 복합 페로브스카이트 태양전지
KR20180042441A (ko) * 2016-08-25 2018-04-25 항조우 마이크로콴타 세미컨덕터 컴퍼니 리미티드 페로브스카이트 박막의 저압　화학　증착　장비 및 그의 사용 방법과 응용
KR20180096872A (ko) * 2017-02-21 2018-08-30 재단법인대구경북과학기술원 광흡수층 조성물, 이를 포함하는 투명태양전지 및 이의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150129034A1 (en) * 2012-05-18 2015-05-14 Isis Innovation Limited Optoelectronic device comprising perovskites
KR20160118847A (ko) * 2015-04-03 2016-10-12 한국과학기술연구원 무기 나노물질 기반 소수성 전하 수송체, 이의 제조방법 및 이를 포함하는 유무기 복합 페로브스카이트 태양전지
KR20180042441A (ko) * 2016-08-25 2018-04-25 항조우 마이크로콴타 세미컨덕터 컴퍼니 리미티드 페로브스카이트 박막의 저압　화학　증착　장비 및 그의 사용 방법과 응용
KR20180096872A (ko) * 2017-02-21 2018-08-30 재단법인대구경북과학기술원 광흡수층 조성물, 이를 포함하는 투명태양전지 및 이의 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RAHMAN M.; NEWAZ M.A.; MONDAL B.K.; KUDDUS A.; KARIM M.A.; RASHID M.M.; RUBEL MIRZA H.K.; HOSSAIN J.: "Unraveling the electrical properties of solution-processed copper iodide thin films for CuI/n-Si solar cells", MATERIALS RESEARCH BULLETIN, ELSEVIER, KIDLINGTON., GB, vol. 118, 13 June 2019 (2019-06-13), GB , XP085744947, ISSN: 0025-5408, DOI: 10.1016/j.materresbull.2019.110518 *

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Publication number Publication date
KR20210112804A (ko) 2021-09-15
WO2021177800A2 (ko) 2021-09-10
KR102566015B1 (ko) 2023-08-11

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