CN1208811C - 一种制备p型氧化锌薄膜的方法 - Google Patents
一种制备p型氧化锌薄膜的方法 Download PDFInfo
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- CN1208811C CN1208811C CNB03129300XA CN03129300A CN1208811C CN 1208811 C CN1208811 C CN 1208811C CN B03129300X A CNB03129300X A CN B03129300XA CN 03129300 A CN03129300 A CN 03129300A CN 1208811 C CN1208811 C CN 1208811C
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- Prior art keywords
- magnetron sputtering
- zinc
- gas
- oxide film
- film
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910052786 argon Inorganic materials 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000011701 zinc Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 229960001296 zinc oxide Drugs 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- BIZOUTFSXXNCGH-UHFFFAOYSA-N [N].[O].[Zn] Chemical compound [N].[O].[Zn] BIZOUTFSXXNCGH-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
本发明公开的制备p型氧化锌薄膜的方法是利用磁控溅射法，在磁控溅射过程中，以金属锌为磁控溅射的靶，在工作气体氩气中另外通入氮气或氮气和氧气作为反应气，使磁控溅射真空室压强为10-1Pa～100Pa，氮气流量与氩气流量的比在1∶10～1∶1范围内，氧气流量与氩气流量的比在0∶1～1∶1范围内，进行磁控溅射镀膜，获得氮氧锌薄膜，再将氮氧锌薄膜在大气或氧气氛中进行热处理，热处理温度在300℃～500℃范围内，处理时间为0.5～5小时，制得p型氧化锌薄膜。本发明方法原理简单，载流子浓度控制方便，可操作性好。
Description
技术领域
本发明涉及半导体薄膜的制备方法。具体说，是关于p型氧化锌薄膜的制备方法。
背景技术
氧化锌是一种很有前途的蓝紫波段的光电材料，在光电器件方面有潜在的应用前景。但氧化锌的p型掺杂技术一直没有很好解决，无法形成同质pn结，影响了氧化锌在光电器件中的应用。
发明内容
本发明的目的在于提供一种制备p型氧化锌薄膜的方法。
本发明方法是在磁控溅射过程，在工作气体氩气中另外通入氮气或氮气和氧气作为反应气，获得p型氧化锌薄膜的，所用靶材为金属锌。
该制备方法包括以下步骤：
1)清洗衬底，除去表面的油脂和污物；
2)把衬底放入磁控溅射室中，以金属锌为磁控溅射的靶，抽真空至10-3Pa，加热衬底，使其温度保持在100～500℃范围内的某个值，通入工作气体氩气，反应气体氮气或氮气和氧气，使真空室压强为10-1Pa～100Pa之间，氮气流量与氩气流量的比在1∶10～1∶1范围内，氧气流量与氩气流量的比在0∶1～1∶1范围内；
3)开启磁控溅射电源，进行磁控溅射镀膜，获得氮氧锌薄膜(ZnNxOy)；
4)将上述制备的薄膜从真空室取出，在大气或氧气氛中进行热处理，热处理温度在300℃～500℃范围内，处理时间为0.5～5小时，得p型氧化锌薄膜。
本发明在磁控溅射时，以金属锌为溅射靶材，以氩气为工作气体，氮气或氮气和氧气为反应气体。氧气分子和氮气分子在磁控溅射时被离化形成离子或原子，与磁控溅射靶上溅射出来的锌原子或锌离子结合后在衬底表面形成氮氧锌(ZnNxOy)薄膜。根据氮气与氧气流量的不同，薄膜中的y值可以在0-1之间变化，x值可以在0.001-3之间变化，但3x+2y之和小于等于2。将磁控溅射获得的氮氧锌薄膜在空气或氧气中热处理，使其转变为含氮的氧化锌薄膜。由于氮原子是5族原子，而氧原子是6族原子，氮原子取代氧化锌中的氧原子可生成p型导电的氧化锌薄膜。
本发明的优点是原理简单，载流子浓度控制方便，可操作性好。
具体实施方式
以下结合实例进一步说明本发明。
p型氧化锌薄膜的制备包括以下步骤：
以金属锌作溅射靶，以石英玻璃为衬底，首先按常规方法清洗衬底，除去表面的油脂和污物，然后把衬底放入磁控溅射室中，抽真空至10-3Pa，加热衬底，保持衬底温度为100℃，通入工作气体氩气，反应气体氮气，其中氩气的流量为28sccm，氮气的流量为3sccm。开启磁控溅射电源进行磁控溅射镀膜，溅射时真空室压强为5×10-1Pa，沉积时间为1小时，获得氮化锌薄膜。将获得的氮化锌薄膜从真空室取出，在450℃空气中热氧化3小时。X光衍射测试表明薄膜从氮化锌结构转化成了氧化锌结构。霍尔效应测试表明转化后的薄膜为p型氧化锌，空穴浓度高达5.78×1017cm-3。
Claims (1)
1.p型氧化锌薄膜的制备方法，其特征是包括以下步骤：
1)清洗衬底，除去表面的油脂和污物；
2)把衬底放入磁控溅射室中，以金属锌为磁控溅射的靶，抽真空至10-3Pa，加热衬底，使其温度保持在100～500℃范围内的某个值，通入工作气体氩气，反应气体氮气，使真空室压强为10-1Pa～100Pa之间，氮气流量与氩气流量的比在1∶10～1∶1范围内；
3)开启磁控溅射电源，进行磁控溅射镀膜，获得氮化锌薄膜；
4)将上述制备的薄膜从真空室取出，在大气或氧气氛中进行热处理，热处理温度在300℃～500℃范围内，处理时间为0.5～5小时，得p型氧化锌薄膜。
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| CNB03129300XA CN1208811C (zh) | 2003-06-11 | 2003-06-11 | 一种制备p型氧化锌薄膜的方法 |
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| CNB03129300XA CN1208811C (zh) | 2003-06-11 | 2003-06-11 | 一种制备p型氧化锌薄膜的方法 |
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| CN1461044A CN1461044A (zh) | 2003-12-10 |
| CN1208811C true CN1208811C (zh) | 2005-06-29 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327042C (zh) * | 2005-03-28 | 2007-07-18 | 中国科学院半导体研究所 | 利用氧化锌缓冲层生长单晶氧化锌薄膜的方法 |
| CN100353578C (zh) * | 2005-11-18 | 2007-12-05 | 浙江大学 | 一种硅基氧化锌紫外电致发光器件及其制备方法 |
| CN100552081C (zh) * | 2006-12-11 | 2009-10-21 | 中国科学院上海硅酸盐研究所 | 一种电感耦合溅射制备稳定空穴型氧化锌薄膜的方法 |
| CN100511739C (zh) * | 2007-04-05 | 2009-07-08 | 中国科学院半导体研究所 | δ掺杂制备P型氧化锌薄膜的方法 |
| US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| CN101599363B (zh) * | 2009-04-09 | 2011-11-23 | 上海工程技术大学 | 一种氮掺杂氧化锌p型稀磁半导体材料的制备方法 |
| CN102925856A (zh) * | 2012-11-20 | 2013-02-13 | 蚌埠玻璃工业设计研究院 | 一种以Zn膜为基材直接制备N掺杂ZnO薄膜的方法 |
| CN104004990B (zh) * | 2014-06-03 | 2016-08-24 | 上海理工大学 | 制备非晶态透明氧化锌薄膜的方法 |
| CN105525268A (zh) * | 2016-01-28 | 2016-04-27 | 南京大学 | 一种提高ZnON薄膜迁移率和稳定性的方法 |
| CN105671507B (zh) * | 2016-03-18 | 2017-10-17 | 商丘师范学院 | 一种氮氟共掺杂氧化锌薄膜的制备方法 |
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2003
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| CN1461044A (zh) | 2003-12-10 |
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