CN106252432A - 一种可降低缺陷密度的碲化镉太阳能电池制备方法 - Google Patents
一种可降低缺陷密度的碲化镉太阳能电池制备方法 Download PDFInfo
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Abstract
本发明公开了一种可降低缺陷密度的碲化镉太阳能电池制备方法,包括以下步骤:(A)提供基板;(B)在所述基板上沉积透明导电氧化物薄膜;(C)沉积窗口层硫化镉薄膜;(D)在所述硫化镉薄膜上沉积吸收层碲化镉薄膜;(E)在所述碲化镉薄膜表面喷涂CdCl2溶液,然后进行热处理;(F)对所述经过热处理的碲化镉薄膜用含硝酸的溶液进行刻蚀;(G)对所述刻蚀的碲化镉薄膜进行PECVD等离子体处理以钝化缺陷。本发明的方法是通过在碲化镉薄膜(CdTe)太阳能电池制造过程中,引入等离子体处理,钝化缺陷,有效降低碲化镉薄膜的缺陷密度,提高材料的性能,进一步提高碲化镉薄膜太阳能电池的光电转换效率,从而提高电池性能。
Description
技术领域
本发明涉及光伏太阳能电池技术领域,尤其是一种可降低缺陷密度的碲化镉太阳能电池制备方法。
背景技术
随着能源的日益短缺,人们对太阳能的开发和利用日趋重视。市场上对面积更大、效率更高,且生产成本更低的新型太阳能电池的需求日益增加。在光伏电池领域,碲化镉(CdTe)薄膜太阳电池因其本身固有的材料性能和他的发展进程、便于大面积连续化生产等优点,受到广泛关注。碲化镉(CdTe)是典型的多晶结构的材料,它具有理想的1.45-1.5eV的带隙,且是一种直接带隙的半导体材料,吸收系数在5×105cm-1,因此只需要几微米的厚度的材料就可以制备高效率的太阳能电池,是一种高效、稳定、相对成本低的薄膜太阳能电池。而且碲化镉(CdTe)薄膜太阳能电池结构简单,容易实现规模化生产,是近年来国内外太阳能电池研究的热点之一,尤其是在薄膜太阳能电池领域。
碲化镉(CdTe)薄膜太阳能电池主要由n型的硫化镉(CdS)和p型碲化镉(CdTe)组成,目前沉积CdS、CdTe的方法主要有电化学沉积法、射频溅射法、真空蒸发法、喷涂热分解法、近空间升华法、气相运输沉积法等。气相运输沉积法制备的碲化镉薄膜太阳能电池膜层质量好、沉积速率高、晶粒尺寸大、原材料利用率高等优点,很容易实现产业化生产。
碲化镉(CdTe)作为碲化镉薄膜太阳能电池的吸收层,其薄膜质量的好坏决定了碲化镉太阳能电池的性能。碲化镉作为一种化合物半导体材料,经常含有高浓度的本征缺陷和杂质缺陷等缺陷态,其中最重要的本征缺陷是阳离子空位,阳离子空位引入的深受主能级,形成载流子复合中心,减少非平衡载流子寿命,降低太阳能电池性能。因此,要提高电池性能必须尽可能的减少缺陷态的密度。
发明内容
为解决上述技术问题,本发明目的是提供一种可降低缺陷密度的碲化镉太阳能电池制备方法。
本发明采用的技术方案是:
一种可降低缺陷密度的碲化镉太阳能电池制备方法,包括以下步骤:(A)提供基板;(B)在所述基板上沉积用作薄膜电池前电极的透明导电氧化物薄膜;(C)在所述透明导电氧化物薄膜表面沉积窗口层硫化镉薄膜;(D)在所述硫化镉薄膜上沉积吸收层碲化镉薄膜;(E)在所述碲化镉薄膜表面喷涂CdCl2溶液,然后进行热处理;(F)对所述经过热处理的碲化镉薄膜用含硝酸的溶液进行刻蚀;(G)对所述刻蚀的碲化镉薄膜进行PECVD等离子体处理以钝化缺陷;(H)在所述处理后的碲化镉薄膜上沉积缓冲层;(I)在所述缓冲层表面沉积金属背电极;(J)对沉积金属背电极后的电池进行退火层压。
所述步骤(C)中硫化镉薄膜采用气相运输法、溅射、蒸发沉积、 CVD、化学浴沉积工艺中的至少一种来进行沉积。
所述步骤(D)中碲化镉薄膜采用气相运输法、溅射、蒸发沉积、 CVD、化学浴沉积工艺中的至少一种来进行沉积。
所述透明导电氧化物为ITO、FTO或BZO。
所述步骤(G)中行PECVD等离子体处理的工艺参数:电源频率为RF(13.56MHz)或者VHF(40.68MHz),工作气体为CO2、H2、Ar、H2O蒸汽的一种或者多种,气体流量为10sccm-100000sccm,工作压力为0.1mBar-10mBar,功率密度为0.05W/cm2-10W/cm2,温度为25℃-600℃,时间为10s-2000s。
所述步骤(C)采用气相运输法的沉积的条件为压力10-1000pa,温度100℃-650℃,O2浓度为0.01%-10%。
本发明的有益效果:
本发明的方法是通过在碲化镉薄膜(CdTe)太阳能电池制造过程中,引入等离子体处理,钝化缺陷,有效降低碲化镉薄膜的缺陷密度,提高材料的性能,进一步提高碲化镉薄膜太阳能电池的光电转换效率,从而提高电池性能。
附图说明
下面结合附图对本发明的具体实施方式做进一步的说明。
图1为本发明方法所基于的碲化镉太阳能电池结构示意图。
具体实施方式
如图1所示,为了更具体的对比本发明改进的前后状况,先介绍传统碲化镉太阳能电池的制备方法。首先在玻璃基板1上采用CVD法沉积800nm的SnO2:F薄膜2(FTO),作为电池的透明前电极。在SnO2:F薄膜2上采用气相运输法沉积50-500nm的n型CdS窗口层3,沉积的条件为压力10-1000pa,温度100℃-650℃;O2浓度为0.01%-10%,然后沉积1-8um的p型CdTe薄膜4;在CdTe薄膜4表面喷涂0.5-100um后的CdCl2溶液,然后在100-500℃大气环境中退火30分钟,将退火的碲化镉电池放在含有0.1-1.5%的硝酸的溶液中进行刻蚀;再在刻蚀过的CdTe表面沉积缓冲层5,在缓冲层上面沉积一层Mo/Al/Cr金属背电极6,对电池进行退火层压。
再介绍本发明可降低缺陷密度的碲化镉太阳能电池制备方法:首先在玻璃基板1上采用CVD法沉积800nm的SnO2:F薄膜2(FTO),作为电池的透明前电极。在SnO2:F薄膜2上采用气相运输法沉积50-500nm的n型CdS窗口层3,沉积的条件为压力10-1000pa,温度100℃-650℃;O2浓度为0.01%-10%,然后沉积1-8um的p型CdTe薄膜4;在所述CdTe表面喷涂0.5-100um后的CdCl2溶液,然后在100-500℃大气环境中退火30分钟,将退火的碲化镉电池放在含有0.1-1.5%的硝酸的溶液中进行刻蚀;将刻蚀处理的CdTe薄膜太阳能电池放进PECVD真空腔室进行处理,所述处理方法为PECVD(等离子体增强化学气相沉积法)等离子体处理;
其中,上述PECVD等离子体处理的工艺参数:电源频率为RF(13.56MHz)或者VHF(40.68MHz),工作气体为CO2、H2、Ar、H2O蒸汽的一种或者多种,气体流量为10sccm-100000sccm,工作压力为0.1mBar-10mBar,功率密度为0.05W/cm2-10W/cm2,温度为25℃-600℃,时间为10s-2000s。
然后在等离子体处理过的CdTe表面沉积缓冲层5,在缓冲层上面沉积一层Mo/Al/Cr金属背电极6,对电池进行退火层压。
本发明的方法是通过在碲化镉薄膜(CdTe)太阳能电池制造过程中,引入等离子体处理,钝化缺陷,有效降低碲化镉薄膜的缺陷密度,提高材料的性能,进一步提高碲化镉薄膜太阳能电池的光电转换效率,从而提高电池性能。
以上所述仅为本发明的优先实施方式,本发明并不限定于上述实施方式,只要以基本相同手段实现本发明目的的技术方案都属于本发明的保护范围之内。
Claims (7)
1.一种可降低缺陷密度的碲化镉太阳能电池制备方法,其特征在于,包括以下步骤:(A)提供基板;(B)在所述基板上沉积用作薄膜电池前电极的透明导电氧化物薄膜;(C)在所述透明导电氧化物薄膜表面沉积窗口层硫化镉薄膜;(D)在所述硫化镉薄膜上沉积吸收层碲化镉薄膜;(E)在所述碲化镉薄膜表面喷涂CdCl2溶液,然后进行热处理;(F)对所述经过热处理的碲化镉薄膜用含硝酸的溶液进行刻蚀;(G)对所述刻蚀的碲化镉薄膜进行PECVD等离子体处理以钝化缺陷;(H)在所述处理后的碲化镉薄膜上沉积缓冲层;(I)在所述缓冲层表面沉积金属背电极;(J)对沉积金属背电极后的电池进行退火层压。
2.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于: 所述步骤(C)中硫化镉薄膜采用气相运输法沉积、溅射、蒸发沉积、 CVD、化学浴沉积工艺中的至少一种来进行沉积。
3.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于:所述步骤(D)中碲化镉薄膜采用气相运输法沉积、溅射、蒸发沉积、 CVD、化学浴沉积工艺中的至少一种来进行沉积。
4.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于:所述透明导电氧化物为ITO、FTO或BZO。
5.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于:所述步骤(G)中PECVD等离子体处理的工艺参数:工作气体为CO2、H2、Ar、H2O蒸汽的一种或者多种,气体流量为10sccm-100000sccm,工作压力为0.1mBar-10mBar,功率密度为0.05W/cm2-10W/cm2,温度为25℃-600℃,时间为10s-2000s。
6.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于:所述步骤(G)中PECVD电源频率为RF13.56MHz或者VHF40.68MHz。
7.根据权利要求1所述的碲化镉太阳能电池制备方法,其特征在于:所述步骤(C)沉积采用气相运输法沉积法,沉积的条件为压力10-1000pa,温度100℃-650℃,O2浓度为0.01%-10%。
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