IT1396166B1 - Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds. - Google Patents

Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds.

Info

Publication number
IT1396166B1
IT1396166B1 ITFI2009A000220A ITFI20090220A IT1396166B1 IT 1396166 B1 IT1396166 B1 IT 1396166B1 IT FI2009A000220 A ITFI2009A000220 A IT FI2009A000220A IT FI20090220 A ITFI20090220 A IT FI20090220A IT 1396166 B1 IT1396166 B1 IT 1396166B1
Authority
IT
Italy
Prior art keywords
films
cdte
thin
activation
applications
Prior art date
Application number
ITFI2009A000220A
Other languages
English (en)
Inventor
Nicola Romeo
Alessandro Romeo
Alessio Bosio
Original Assignee
Arendi S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to ITFI2009A000220A priority Critical patent/IT1396166B1/it
Application filed by Arendi S P A filed Critical Arendi S P A
Priority to CA2776478A priority patent/CA2776478A1/en
Priority to EP10787174A priority patent/EP2489077A1/en
Priority to PCT/IB2010/054587 priority patent/WO2011045728A1/en
Priority to AU2010308054A priority patent/AU2010308054A1/en
Priority to JP2012533724A priority patent/JP5128017B1/ja
Priority to US13/498,124 priority patent/US20120190151A1/en
Priority to CN2010800461188A priority patent/CN102668107A/zh
Priority to MX2012004252A priority patent/MX2012004252A/es
Publication of ITFI20090220A1 publication Critical patent/ITFI20090220A1/it
Application granted granted Critical
Publication of IT1396166B1 publication Critical patent/IT1396166B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
ITFI2009A000220A 2009-10-13 2009-10-13 Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds. IT1396166B1 (it)

Priority Applications (9)

Application Number Priority Date Filing Date Title
ITFI2009A000220A IT1396166B1 (it) 2009-10-13 2009-10-13 Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds.
EP10787174A EP2489077A1 (en) 2009-10-13 2010-10-11 Method for the activation of cdte thin films for the application in cdte/cds type thin film solar cells
PCT/IB2010/054587 WO2011045728A1 (en) 2009-10-13 2010-10-11 Method for the activation of cdte thin films for the application in cdte/cds type thin film solar cells
AU2010308054A AU2010308054A1 (en) 2009-10-13 2010-10-11 Method for the activation of CdTe thin films for the application in CdTe/CdS type thin film solar cells
CA2776478A CA2776478A1 (en) 2009-10-13 2010-10-11 Method for the activation of cdte thin films for the application in cdte/cds type thin film solar cells
JP2012533724A JP5128017B1 (ja) 2009-10-13 2010-10-11 ＣｄＴｅ／ＣｄＳ型薄膜太陽電池に使用するＣｄＴｅ薄膜の活性化方法
US13/498,124 US20120190151A1 (en) 2009-10-13 2010-10-11 METHOD FOR THE ACTIVATION OF CdTe THIN FILMS FOR THE APPLICATION IN CdTe/CdS TYPE THIN FILM SOLAR CELLS
CN2010800461188A CN102668107A (zh) 2009-10-13 2010-10-11 用于在CdTe/CdS型薄膜太阳能电池中应用的CdTe薄膜的活化方法
MX2012004252A MX2012004252A (es) 2009-10-13 2010-10-11 Metodo para la activacion de peliculas delgadas de cdte para la aplicacion en celdas solares de pelicula delgada del tipo cdte/cds.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITFI2009A000220A IT1396166B1 (it) 2009-10-13 2009-10-13 Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds.

Publications (2)

Publication Number Publication Date
ITFI20090220A1 ITFI20090220A1 (it) 2011-04-14
IT1396166B1 true IT1396166B1 (it) 2012-11-16

Family

ID=42167241

Family Applications (1)

Application Number Title Priority Date Filing Date
ITFI2009A000220A IT1396166B1 (it) 2009-10-13 2009-10-13 Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds.

Country Status (9)

Country Link
US (1) US20120190151A1 (it)
EP (1) EP2489077A1 (it)
JP (1) JP5128017B1 (it)
CN (1) CN102668107A (it)
AU (1) AU2010308054A1 (it)
CA (1) CA2776478A1 (it)
IT (1) IT1396166B1 (it)
MX (1) MX2012004252A (it)
WO (1) WO2011045728A1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2699033C1 (ru) * 2018-07-17 2019-09-03 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) Способ низкотемпературной активации фотопроводимости пленок теллурида кадмия
CN116154033A (zh) 2021-11-23 2023-05-23 中国建材国际工程集团有限公司 一种激活薄膜太阳能电池吸收层的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846195B2 (ja) * 1980-09-09 1983-10-14 日本電信電話株式会社 密着形イメ−ジセンサの製造方法
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
ATE381785T1 (de) * 2000-07-26 2008-01-15 Antec Solar Energy Ag Verfahren zum aktivieren von cdte- dünnschichtsolarzellen
DE60233418D1 (de) * 2001-10-05 2009-10-01 Solar Systems & Equioments S R Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen
ITLU20050002A1 (it) * 2005-02-08 2006-08-09 Solar Systems & Equipments Srl UN NUOVO PROCESSO PER IL TRATTAMENTO IN AMBIENTE DI CLORO DELLE CELLE SOLARI A FILM SOTTILI DI CdTe/CdS senza l'uso di CdC12.
CN101816073B (zh) * 2007-06-28 2012-02-01 太阳能系统及设备有限公司 Cdte/cds薄膜太阳能电池中的非整流后接触的形成方法
US7943415B1 (en) * 2010-10-27 2011-05-17 Primestar Solar Inc. Methods of sputtering cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices

Also Published As

Publication number Publication date
US20120190151A1 (en) 2012-07-26
JP5128017B1 (ja) 2013-01-23
MX2012004252A (es) 2012-07-17
CA2776478A1 (en) 2011-04-21
ITFI20090220A1 (it) 2011-04-14
JP2013507784A (ja) 2013-03-04
WO2011045728A1 (en) 2011-04-21
EP2489077A1 (en) 2012-08-22
AU2010308054A1 (en) 2012-04-19
CN102668107A (zh) 2012-09-12

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