DE3363846D1 - Method of producing single crystal film - Google Patents
Method of producing single crystal filmInfo
- Publication number
- DE3363846D1 DE3363846D1 DE8383100771T DE3363846T DE3363846D1 DE 3363846 D1 DE3363846 D1 DE 3363846D1 DE 8383100771 T DE8383100771 T DE 8383100771T DE 3363846 T DE3363846 T DE 3363846T DE 3363846 D1 DE3363846 D1 DE 3363846D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- crystal film
- producing single
- producing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
- C30B1/08—Zone recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/123—Polycrystalline diffuse anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57011635A JPS58130517A (ja) | 1982-01-29 | 1982-01-29 | 単結晶薄膜の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3363846D1 true DE3363846D1 (en) | 1986-07-10 |
Family
ID=11783399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383100771T Expired DE3363846D1 (en) | 1982-01-29 | 1983-01-27 | Method of producing single crystal film |
Country Status (6)
Country | Link |
---|---|
US (1) | US4565584A (de) |
EP (1) | EP0085406B1 (de) |
JP (1) | JPS58130517A (de) |
KR (1) | KR900007901B1 (de) |
CA (1) | CA1209017A (de) |
DE (1) | DE3363846D1 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0191505A3 (de) * | 1980-04-10 | 1986-09-10 | Massachusetts Institute Of Technology | Verfahren zur Herstellung von Blättern aus kristallinem Material |
FR2547954B1 (fr) * | 1983-06-21 | 1985-10-25 | Efcis | Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice |
IT1213192B (it) * | 1984-07-19 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'. |
FR2571544B1 (fr) * | 1984-10-05 | 1987-07-31 | Haond Michel | Procede de fabrication d'ilots de silicium monocristallin isoles electriquement les uns des autres |
FR2582862B1 (fr) * | 1985-05-30 | 1987-07-17 | Thomson Csf | Capteur a effet magneto-resistif lineaire, son procede de realisation et son application dans un detecteur de domaines magnetiques |
JPS6265317A (ja) * | 1985-09-17 | 1987-03-24 | Mitsubishi Electric Corp | 半導体単結晶膜形成のためのウエハ構造 |
DE3685732T2 (de) * | 1985-12-20 | 1993-01-21 | Agency Ind Science Techn | Verfahren zur herstellung einer monokristallinen duennen schicht. |
JPS62206816A (ja) * | 1986-03-07 | 1987-09-11 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
JPS6310573A (ja) * | 1986-07-02 | 1988-01-18 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US4902642A (en) * | 1987-08-07 | 1990-02-20 | Texas Instruments, Incorporated | Epitaxial process for silicon on insulator structure |
US4914053A (en) * | 1987-09-08 | 1990-04-03 | Texas Instruments Incorporated | Heteroepitaxial selective-area growth through insulator windows |
DE3741671A1 (de) * | 1987-12-09 | 1989-06-22 | Asea Brown Boveri | Cvd-verfahren zur randpassivierung bei halbleiterbauelementen |
JP2751237B2 (ja) * | 1988-09-07 | 1998-05-18 | ソニー株式会社 | 集積回路装置及び集積回路装置の製造方法 |
JPH02106034A (ja) * | 1988-10-14 | 1990-04-18 | Sanyo Electric Co Ltd | Soi構造の形成方法 |
FR2640428B1 (fr) * | 1988-12-09 | 1992-10-30 | Thomson Csf | Procede de durcissement vis-a-vis des rayonnements ionisants de composants electroniques actifs, et composants durcis de grandes dimensions |
EP0608503B1 (de) | 1989-02-14 | 1997-05-28 | Seiko Epson Corporation | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
US5207863A (en) * | 1990-04-06 | 1993-05-04 | Canon Kabushiki Kaisha | Crystal growth method and crystalline article obtained by said method |
US5254208A (en) * | 1990-07-24 | 1993-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US6008078A (en) * | 1990-07-24 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
JP3156878B2 (ja) * | 1992-04-30 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3497198B2 (ja) * | 1993-02-03 | 2004-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置および薄膜トランジスタの作製方法 |
US5843225A (en) * | 1993-02-03 | 1998-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor and process for fabricating semiconductor device |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
EP0612102B1 (de) * | 1993-02-15 | 2001-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Herstellungsverfahren für eine kristallisierte Halbleiterschicht |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US6867432B1 (en) | 1994-06-09 | 2005-03-15 | Semiconductor Energy Lab | Semiconductor device having SiOxNy gate insulating film |
US5915174A (en) * | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
US6501094B1 (en) | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
US6153166A (en) * | 1997-06-27 | 2000-11-28 | Nippon Pillar Packing Co., Ltd. | Single crystal SIC and a method of producing the same |
JP2002030770A (ja) * | 2000-05-10 | 2002-01-31 | Nkk Steel Sheet & Strip Corp | 屋根板、ハゼ葺き屋根、太陽電池モジュール板を取りつけたハゼ葺き屋根および太陽電池モジュール板の取りつけ、取り外し方法 |
US6274463B1 (en) * | 2000-07-31 | 2001-08-14 | Hewlett-Packard Company | Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method |
US6746933B1 (en) * | 2001-10-26 | 2004-06-08 | International Business Machines Corporation | Pitcher-shaped active area for field effect transistor and method of forming same |
TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI267131B (en) | 2002-03-05 | 2006-11-21 | Semiconductor Energy Lab | Semiconductor element and semiconductor device using the same |
JP4603845B2 (ja) * | 2004-10-12 | 2010-12-22 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
ATE492510T1 (de) * | 2005-01-31 | 2011-01-15 | Freescale Semiconductor Inc | Verfahren zur herstellung einer soi-struktur |
KR100775963B1 (ko) * | 2006-07-12 | 2007-11-15 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP6174943B2 (ja) * | 2013-08-22 | 2017-08-02 | 東京エレクトロン株式会社 | 凹部を充填する方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472954A (en) * | 1977-11-23 | 1979-06-11 | Noboru Tsuya | Semiconductor thin film and method of fabricating same |
JPS5544789A (en) * | 1978-09-27 | 1980-03-29 | Nec Corp | Formation of mono-crystal semiconductor layer |
US4381201A (en) * | 1980-03-11 | 1983-04-26 | Fujitsu Limited | Method for production of semiconductor devices |
US4323417A (en) * | 1980-05-06 | 1982-04-06 | Texas Instruments Incorporated | Method of producing monocrystal on insulator |
US4487639A (en) * | 1980-09-26 | 1984-12-11 | Texas Instruments Incorporated | Localized epitaxy for VLSI devices |
US4319954A (en) * | 1981-02-27 | 1982-03-16 | Rca Corporation | Method of forming polycrystalline silicon lines and vias on a silicon substrate |
US4402762A (en) * | 1981-06-02 | 1983-09-06 | John Puthenveetil K | Method of making highly stable modified amorphous silicon and germanium films |
JPS5861622A (ja) * | 1981-10-09 | 1983-04-12 | Hitachi Ltd | 単結晶薄膜の製造方法 |
JPS5893221A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体薄膜構造とその製造方法 |
US4497683A (en) * | 1982-05-03 | 1985-02-05 | At&T Bell Laboratories | Process for producing dielectrically isolated silicon devices |
US4444620A (en) * | 1983-09-12 | 1984-04-24 | Bell Telephone Laboratories, Incorporated | Growth of oriented single crystal semiconductor on insulator |
-
1982
- 1982-01-29 JP JP57011635A patent/JPS58130517A/ja active Granted
-
1983
- 1983-01-21 KR KR1019830000220A patent/KR900007901B1/ko not_active IP Right Cessation
- 1983-01-25 US US06/460,801 patent/US4565584A/en not_active Expired - Fee Related
- 1983-01-27 DE DE8383100771T patent/DE3363846D1/de not_active Expired
- 1983-01-27 EP EP83100771A patent/EP0085406B1/de not_active Expired
- 1983-01-27 CA CA000420394A patent/CA1209017A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1209017A (en) | 1986-08-05 |
US4565584A (en) | 1986-01-21 |
KR840003530A (ko) | 1984-09-08 |
JPH0514413B2 (de) | 1993-02-25 |
EP0085406A1 (de) | 1983-08-10 |
KR900007901B1 (ko) | 1990-10-22 |
EP0085406B1 (de) | 1986-06-04 |
JPS58130517A (ja) | 1983-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |