KR870004494A - 반도체 기질상에 유전체 필름을 형성하는 방법 - Google Patents
반도체 기질상에 유전체 필름을 형성하는 방법 Download PDFInfo
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- KR870004494A KR870004494A KR1019860008502A KR860008502A KR870004494A KR 870004494 A KR870004494 A KR 870004494A KR 1019860008502 A KR1019860008502 A KR 1019860008502A KR 860008502 A KR860008502 A KR 860008502A KR 870004494 A KR870004494 A KR 870004494A
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- 239000000758 substrate Substances 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 229920000642 polymer Polymers 0.000 claims 20
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- 229920001577 copolymer Polymers 0.000 claims 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 3
- GXZPKSUZGYRRMK-UHFFFAOYSA-N 1,2-dimethylsiline Chemical class CC1=[Si](C)C=CC=C1 GXZPKSUZGYRRMK-UHFFFAOYSA-N 0.000 claims 2
- SHWQWXGIWFEYTA-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-triazatrisilinane Chemical compound N1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)N[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)N[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 SHWQWXGIWFEYTA-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 claims 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims 1
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 1
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000008096 xylene Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실리콘 또는 다른 반도체 기질상의 저준위(low level)인터코넥트 금속선편의 단면도.
제3도 금속화층이 CVD층 위로 적용될 때 선행기술에서 흔히 발생되는 위크포인트를 갖는 산출물의 단면도.
제4도 본 발명에 따라 제조되는 산출물의 단면도.
Claims (13)
- 중합체 용액을 기질상에 스핀-온 적용하고 경화시켜 기질 위에 균일한 중합체 필름을 형성함에 있어서, 일반식(R1R2SiNH)n인 시클로실라잔의 중합체를 중합체 용액의 중합체 물질로 하여 기질에 스핀-온 적용시킴을 특징으로 하는, 반도체 기질상에 유전체 필름을 형성하는 방법.식중, R1과 R2는 각각 수소, 지방족 탄화수소(C1-C2) 또는 아릴기(C6-C16)이고, n은 3 또는 4임.
- 제1항에 있어서, 기질에 적용되는 중합체 용액이 벤젠, 톨루엔, 크실렌, 메틸-이소부틸 케톤 및 시클로펜타논으로부터 선택된 용매와 상기 시클로실라잔의 중합체로 구성된 것임을 특징으로 하는 방법.
- 제2항에 있어서, 상기 중합체가 R1및 R2가 각각 수소, 메틸기, 에틸기, 시클로헥실기, 페닐기 또는 p-틀루릴기인 시클로실라잔기의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 R1및 R2가 모두 메틸기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 R1및 R2가 모두 페닐기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 헥사메틸 시클로트리 실라잔과 헥사페닐시클로트리실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 R1은 메틸기이고 R2는 페닐기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 에틸렌 디아민의 디메틸실린 유도체와 트리메틸트리페닐 시클로실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 에틸렌 디아민의 디메틸실린 유도체와 헥사페닐시클로트리실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 상기 중합체가 디메틸디클로로실탄-디페닐디클로로실탄의 혼합물과 암모니아의 반응생성물인 실릴아민 단량체로부터 유도된 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
- 제1항에 있어서, 중합체 용액에 있어서 중합체의 농도가 1wt%-50wt%임을 특징으로 하는 유전체 필름의 형성방법.
- 제1항에 있어서, 기질에 스핀-온 적용된 필름을 400 내지 450℃에서 경화시킴으로서 유리와 같은 불용성 상태의 필름을 산출함을 특징으로 하는, 유전체 필름의 형성방법.
- 제12항의 방법에 따라서 형성된 유리상의 불용성 실름을 산소 또는 증기 기권하에서 900℃로 더욱 가열시켜 이산화실리콘(SiO2) 필름을 산출함을 특징으로 하는, 반도체 기질상에 유전체 필름을 형성하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US78642185A | 1985-10-11 | 1985-10-11 | |
US786,421 | 1985-10-11 |
Publications (1)
Publication Number | Publication Date |
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KR870004494A true KR870004494A (ko) | 1987-05-09 |
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KR1019860008502A KR870004494A (ko) | 1985-10-11 | 1986-10-10 | 반도체 기질상에 유전체 필름을 형성하는 방법 |
Country Status (3)
Country | Link |
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EP (1) | EP0218117A3 (ko) |
JP (1) | JPS6288327A (ko) |
KR (1) | KR870004494A (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US4842888A (en) * | 1988-04-07 | 1989-06-27 | Dow Corning Corporation | Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors |
WO1993002472A1 (en) * | 1991-07-16 | 1993-02-04 | Catalysts & Chemicals Industries Co., Ltd. | Semiconductor device and production thereof |
JPH05243223A (ja) * | 1992-02-28 | 1993-09-21 | Fujitsu Ltd | 集積回路装置の製造方法 |
DE69416881T2 (de) * | 1993-02-05 | 1999-11-04 | Dow Corning Corp., Midland | Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen |
US5912047A (en) * | 1993-03-25 | 1999-06-15 | Dow Corning Corporation | Borosilicate electronic coatings |
KR100479000B1 (ko) * | 1996-05-15 | 2005-08-01 | 세이코 엡슨 가부시키가이샤 | 박막디바이스,액정패널및전자기기및박막디바이스의제조방법 |
EP1365443A3 (en) | 1996-09-19 | 2004-11-17 | Seiko Epson Corporation | Matrix type display device and manufacturing method thereof |
JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
KR100600631B1 (ko) | 1998-04-24 | 2006-07-13 | 쇼쿠바이가세고교 가부시키가이샤 | 저유전율 실리카계 피막 형성용 도포액 및 저유전율피막으로 도포된 기재 |
EP1391491B1 (en) | 2001-04-24 | 2008-04-09 | Nissan Chemical Industries, Limited | Method of forming thick silica-based film |
JPWO2003087228A1 (ja) | 2002-04-12 | 2005-08-18 | Azエレクトロニックマテリアルズ株式会社 | ケイ素含有共重合ポリマー組成物、溶剤可溶性架橋ケイ素含有共重合ポリマー及びこれらの硬化物 |
CN101080282B (zh) | 2004-12-17 | 2010-05-12 | 国立大学法人德岛大学 | 基材表面的改性方法、具有改性表面的基材及其制造方法 |
JP2014203858A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社Adeka | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 |
EP3431629B1 (en) * | 2014-10-24 | 2021-11-24 | Versum Materials US, LLC | Compositions and methods using same for deposition of silicon-containing films |
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US3228895A (en) * | 1963-05-15 | 1966-01-11 | Southern Res Inst | Infusible silylamine polymer and process for producing same |
DE2944180A1 (de) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
CA1169022A (en) * | 1982-04-19 | 1984-06-12 | Kevin Duncan | Integrated circuit planarizing process |
US4451969A (en) * | 1983-01-10 | 1984-06-05 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
-
1986
- 1986-09-11 EP EP86112589A patent/EP0218117A3/en not_active Withdrawn
- 1986-10-09 JP JP61241183A patent/JPS6288327A/ja active Pending
- 1986-10-10 KR KR1019860008502A patent/KR870004494A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0218117A2 (en) | 1987-04-15 |
JPS6288327A (ja) | 1987-04-22 |
EP0218117A3 (en) | 1989-11-23 |
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