KR870004494A - 반도체 기질상에 유전체 필름을 형성하는 방법 - Google Patents

반도체 기질상에 유전체 필름을 형성하는 방법 Download PDF

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KR870004494A
KR870004494A KR1019860008502A KR860008502A KR870004494A KR 870004494 A KR870004494 A KR 870004494A KR 1019860008502 A KR1019860008502 A KR 1019860008502A KR 860008502 A KR860008502 A KR 860008502A KR 870004494 A KR870004494 A KR 870004494A
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polymer
cyclosilazane
group
substrate
film
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진 아넬토 루이스
쿠마르 굽타 사리슈
웨이크필드 키틀리 스티븐
시드니 우스터 죠지
루이스 드프렌다 랠프
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로이 에이취. 멧신길
알라이드 코오포레이션
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Publication of KR870004494A publication Critical patent/KR870004494A/ko

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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02107Forming insulating materials on a substrate
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  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 기질상에 유전체 필름을 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실리콘 또는 다른 반도체 기질상의 저준위(low level)인터코넥트 금속선편의 단면도.
제3도 금속화층이 CVD층 위로 적용될 때 선행기술에서 흔히 발생되는 위크포인트를 갖는 산출물의 단면도.
제4도 본 발명에 따라 제조되는 산출물의 단면도.

Claims (13)

  1. 중합체 용액을 기질상에 스핀-온 적용하고 경화시켜 기질 위에 균일한 중합체 필름을 형성함에 있어서, 일반식(R1R2SiNH)n인 시클로실라잔의 중합체를 중합체 용액의 중합체 물질로 하여 기질에 스핀-온 적용시킴을 특징으로 하는, 반도체 기질상에 유전체 필름을 형성하는 방법.
    식중, R1과 R2는 각각 수소, 지방족 탄화수소(C1-C2) 또는 아릴기(C6-C16)이고, n은 3 또는 4임.
  2. 제1항에 있어서, 기질에 적용되는 중합체 용액이 벤젠, 톨루엔, 크실렌, 메틸-이소부틸 케톤 및 시클로펜타논으로부터 선택된 용매와 상기 시클로실라잔의 중합체로 구성된 것임을 특징으로 하는 방법.
  3. 제2항에 있어서, 상기 중합체가 R1및 R2가 각각 수소, 메틸기, 에틸기, 시클로헥실기, 페닐기 또는 p-틀루릴기인 시클로실라잔기의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  4. 제1항에 있어서, 상기 중합체가 R1및 R2가 모두 메틸기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  5. 제1항에 있어서, 상기 중합체가 R1및 R2가 모두 페닐기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  6. 제1항에 있어서, 상기 중합체가 헥사메틸 시클로트리 실라잔과 헥사페닐시클로트리실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  7. 제1항에 있어서, 상기 중합체가 R1은 메틸기이고 R2는 페닐기인 시클로실라잔의 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  8. 제1항에 있어서, 상기 중합체가 에틸렌 디아민의 디메틸실린 유도체와 트리메틸트리페닐 시클로실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  9. 제1항에 있어서, 상기 중합체가 에틸렌 디아민의 디메틸실린 유도체와 헥사페닐시클로트리실라잔의 공중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  10. 제1항에 있어서, 상기 중합체가 디메틸디클로로실탄-디페닐디클로로실탄의 혼합물과 암모니아의 반응생성물인 실릴아민 단량체로부터 유도된 중합체임을 특징으로 하는, 유전체 필름의 형성방법.
  11. 제1항에 있어서, 중합체 용액에 있어서 중합체의 농도가 1wt%-50wt%임을 특징으로 하는 유전체 필름의 형성방법.
  12. 제1항에 있어서, 기질에 스핀-온 적용된 필름을 400 내지 450℃에서 경화시킴으로서 유리와 같은 불용성 상태의 필름을 산출함을 특징으로 하는, 유전체 필름의 형성방법.
  13. 제12항의 방법에 따라서 형성된 유리상의 불용성 실름을 산소 또는 증기 기권하에서 900℃로 더욱 가열시켜 이산화실리콘(SiO2) 필름을 산출함을 특징으로 하는, 반도체 기질상에 유전체 필름을 형성하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860008502A 1985-10-11 1986-10-10 반도체 기질상에 유전체 필름을 형성하는 방법 KR870004494A (ko)

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US786,421 1985-10-11

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US5912047A (en) * 1993-03-25 1999-06-15 Dow Corning Corporation Borosilicate electronic coatings
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EP1391491B1 (en) 2001-04-24 2008-04-09 Nissan Chemical Industries, Limited Method of forming thick silica-based film
JPWO2003087228A1 (ja) 2002-04-12 2005-08-18 Azエレクトロニックマテリアルズ株式会社 ケイ素含有共重合ポリマー組成物、溶剤可溶性架橋ケイ素含有共重合ポリマー及びこれらの硬化物
CN101080282B (zh) 2004-12-17 2010-05-12 国立大学法人德岛大学 基材表面的改性方法、具有改性表面的基材及其制造方法
JP2014203858A (ja) * 2013-04-01 2014-10-27 株式会社Adeka ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法
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JPS6288327A (ja) 1987-04-22
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