KR870006141A - 반도체용 절연막의 형성방법 - Google Patents

반도체용 절연막의 형성방법 Download PDF

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KR870006141A
KR870006141A KR860010780A KR860010780A KR870006141A KR 870006141 A KR870006141 A KR 870006141A KR 860010780 A KR860010780 A KR 860010780A KR 860010780 A KR860010780 A KR 860010780A KR 870006141 A KR870006141 A KR 870006141A
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insulating film
alkyl
aryl
diaryl
dialkyl
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KR950008002B1 (ko
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겐지 니와
야스요시 사와구리
아사오 오오야
히로노부 고이께
유다까 스즈끼
하루오 이노우에
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모리 히데오
스미또모 가가꾸오교 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/02—Polysilicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Abstract

내용 없음

Description

반도체용 절연막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. 하기의 (a),(b),(c)의 (a):(b):(c)=0.14∼0.50:0.03∼0.66:0.11∼0.66몰 분율 혼합물을 가수분해 및 축중합하여 제조한 실록산 전중합체의 숙성산물을 함유함을 특징으로 하는 반도체용 절연막.
    (a) 테트라알콕시실란:Si(OR1)4(I)
    (b) 알킬-또는 아릴-트리알콕시실란:R2Si(OR3)3(Ⅱ)
    (c) 디알킬-또는 디아릴-디알콕시실란:R4R5Si(OR6)2(Ⅲ)
    상기 식에서, R1∼R6은 같거나다르고 1 내지 6탄소원자를 갖는 알킬기 또는 6 내지 10탄소원자를 갖는 아릴기이다.
  2. 제1항에 있어서, 전중합체가 디알킬-또는 디아릴-디알콕시실란을 축중합하여 2-내지 10-량체를 함유하는 소단량체를 제조하고, 이 소단량체를 테트라알콕시실란 및 알킬-또는 아릴-트리알콕시실란과 축중합하여 제조한, 디알킬-또는 디아릴-디알콕시시란의 블록을 함유하는 것임을 특징으로하는 반도체용 절연막.
  3. 제1항에 있어서, 전중합체가 2,000 내지 50,000의 중량 평균 분자량을 갖는 것을 특징으로 하는 반도체용 절연막.
  4. 제1항에 있어서, R1, R3및 R6이 같거나 다르고 각각 C1∼C4알킬기 또는 페닐기임을 특징으로하는 반도체용 절연막.
  5. 제1항에 있어서, R2,R4및 R5가 같거나 다르고, 각각 메틸기 또는 페닐기임을 특징으로 하는 반도체용 절연막.
  6. 하기의 (a),(b),(c)의 (a):(b):(c)=0.14∼0.50:0.03∼0.66:0.11∼0.66몰분율 혼합물을 가수분해 및 축중합하여 제조한 실록산 전중합체 혼합물을 유기용매에 녹여서 반도체 표면에 도포하고 그것을 산소 존재하에서 400℃ 이상의 온도로 열처리하는 것을 특징으로 하는 반도체용 절연막의 형성방법.
    (a) 테트라알콕시실란:Si(OR1)4(I)
    (b) 알킬-또는 아릴-트리알콕시실란:R2Si(OR3)3(Ⅱ)
    (c) 디알킬-또는 디아릴-디알콕시실란:R4R5Si(OR6)2(Ⅲ)
    상기 식에서, R1∼R6는 같거나 다르고 1 내지 6탄소원자를 갖는 알킬기 또는 6 내지 10 탄소원자를 갖는 아릴기이다.
  7. 하기의 (a),(b),(c)의 (a):(b):(c)=0.14∼0.50:0.03∼0.66:0.11∼0.66몰분율 혼합물을 가수분해 및 축중합하여 제조한 실록산전중합체 및 유기용매를 함유하는 것을 특징으로 하는 반도체 절연막형성에 사용하는 액상 조성물.
    (a) 테트라알콕시실란:Si(OR1)4(I)
    (b) 알킬-또는 아릴-트리알콕시실란:R2Si(OR3)3(Ⅱ)
    (c) 디알킬-또는 디아릴-디알콕시실란:
    R4R5Si(OR6)2(Ⅲ)
    상기 식에서, R1∼R6는 같거나 다르고 1 내지 6탄소원자를 갖는 알킬기 또는 6 내지 10 탄소원자를 갖는 아릴기이다.
  8. 제7항에 있어서, 전중합체가 디알킬-또는 디아릴-디알콕시실란을 축중합하여 2-내지 10-량체를 함유하는 소단량체를 제조하고, 이 소단량체를 테트라알콕시실란 및 알킬-또는 아릴-트리알콕시실란과 축중합하여 제조한, 디알킬-또는 디아릴-디알콕시실란의 블록을 함유하는 것을 특징으로하는 반도체용 절연막 형성에 사용되는 액상 조성물.
  9. 제7항에 있어서, 전중합체가 2,000 내지 50,000의 중량-평균분자량을 갖는 것을 특징으로 하는 반도체용 절연막 형성에 사용되는 액상 조성물.
  10. 제7항에 있어서, 전중합체의 농도가 최소한 4중량%임을 특징으로 하는 반도체용 절연막 형성에 사용되는 액상 조성물.
  11. 제7항에 있어서, 유기용매가 알코올, 케톤. 에틸렌글리콜의 모노알킬에테르, 프로필렌글리콜의 모노알킬에테르, 방향족화합물 및 그들의 혼합물로 구성되는 군으로부터 선택됨을 특징으로 하는 반도체용 절연막 형성에 사용되는 액상 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860010780A 1985-12-17 1986-12-16 반도체용 절연막의 형성방법 KR950008002B1 (ko)

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JP285060/1985 1985-12-17
JP85-285060 1985-12-17
JP28506085 1985-12-17

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KR870006141A true KR870006141A (ko) 1987-07-09
KR950008002B1 KR950008002B1 (ko) 1995-07-24

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EP (1) EP0226208B1 (ko)
JP (1) JPH0791509B2 (ko)
KR (1) KR950008002B1 (ko)
CA (1) CA1281840C (ko)
DE (1) DE3682573D1 (ko)
MX (1) MX169135B (ko)

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MX169135B (es) 1993-06-23
JPS62230828A (ja) 1987-10-09
EP0226208A2 (en) 1987-06-24
JPH0791509B2 (ja) 1995-10-04
EP0226208A3 (en) 1988-11-02
DE3682573D1 (de) 1992-01-02
KR950008002B1 (ko) 1995-07-24
CA1281840C (en) 1991-03-19
EP0226208B1 (en) 1991-11-21

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