DE3682573D1 - Isolierende schicht fuer halbleiter, herstellung dieser schicht und fluessige zusammensetzung fuer die herstellung dieser schicht. - Google Patents

Isolierende schicht fuer halbleiter, herstellung dieser schicht und fluessige zusammensetzung fuer die herstellung dieser schicht.

Info

Publication number
DE3682573D1
DE3682573D1 DE8686117503T DE3682573T DE3682573D1 DE 3682573 D1 DE3682573 D1 DE 3682573D1 DE 8686117503 T DE8686117503 T DE 8686117503T DE 3682573 T DE3682573 T DE 3682573T DE 3682573 D1 DE3682573 D1 DE 3682573D1
Authority
DE
Germany
Prior art keywords
layer
production
semiconductor
liquid composition
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686117503T
Other languages
English (en)
Inventor
Kenji Niwa
Yasuyoshi Sawaguri
Asao Oh-Ya
Hironobu Koike
Yutaka Suzuki
Haruo Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Application granted granted Critical
Publication of DE3682573D1 publication Critical patent/DE3682573D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/02—Polysilicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE8686117503T 1985-12-17 1986-12-16 Isolierende schicht fuer halbleiter, herstellung dieser schicht und fluessige zusammensetzung fuer die herstellung dieser schicht. Expired - Fee Related DE3682573D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28506085 1985-12-17

Publications (1)

Publication Number Publication Date
DE3682573D1 true DE3682573D1 (de) 1992-01-02

Family

ID=17686639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686117503T Expired - Fee Related DE3682573D1 (de) 1985-12-17 1986-12-16 Isolierende schicht fuer halbleiter, herstellung dieser schicht und fluessige zusammensetzung fuer die herstellung dieser schicht.

Country Status (6)

Country Link
EP (1) EP0226208B1 (de)
JP (1) JPH0791509B2 (de)
KR (1) KR950008002B1 (de)
CA (1) CA1281840C (de)
DE (1) DE3682573D1 (de)
MX (1) MX169135B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069222B2 (ja) * 1986-01-07 1994-02-02 日立化成工業株式会社 多層配線構造の製造法
US4981530A (en) * 1988-11-28 1991-01-01 International Business Machines Corporation Planarizing ladder-type silsesquioxane polymer insulation layer
US5286572A (en) * 1988-11-28 1994-02-15 International Business Machines Corporation Planarizing ladder-type silsequioxane polymer insulation layer
JPH0386725A (ja) * 1989-08-31 1991-04-11 Fujitsu Ltd 絶縁物の製造方法及び半導体装置の製造方法
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
JPH04233732A (ja) * 1990-08-16 1992-08-21 Motorola Inc 半導体の製造工程で使用するスピン・オン誘電体
US5114757A (en) * 1990-10-26 1992-05-19 Linde Harold G Enhancement of polyimide adhesion on reactive metals
EP0686680A4 (de) * 1993-12-27 1996-07-24 Kawasaki Steel Co Isolationsfilm für halbleiteranordnung, beschichtungsflüssigkeit für solchen film und verfahren zur herstellung desselben
US5840821A (en) * 1994-03-11 1998-11-24 Kawasaki Steel Corporation Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution
DE19600305C2 (de) * 1996-01-05 2001-05-03 Siemens Ag Herstellverfahren für eine Siliziumdioxid-Schicht auf einer Topographie sowie eine nach diesem Verfahren hergestellte Siliziumdioxidschicht
KR100308422B1 (ko) 1999-04-15 2001-09-26 주식회사 동진쎄미켐 스핀-온-글라스 및 감광성 수지 제거용 씬너 조성물
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
DE60138327D1 (de) * 2000-02-28 2009-05-28 Jsr Corp Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid
US7128976B2 (en) 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
US6455443B1 (en) * 2001-02-21 2002-09-24 International Business Machines Corporation Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
JP4471564B2 (ja) * 2002-10-31 2010-06-02 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法
JP4225765B2 (ja) 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
DE602004014296D1 (de) † 2003-08-15 2008-07-17 Inst Tech Precision Elect Chromfreies Mittel zur Behandlung von Metalloberflächen
WO2005122228A1 (en) * 2004-06-07 2005-12-22 Dow Global Technologies Inc. Method for preparing a gap-filling dielectric film
JP5882583B2 (ja) * 2010-02-04 2016-03-09 東京応化工業株式会社 エアギャップ形成用シリカ系被膜形成材料及びエアギャップ形成方法
JP2013047293A (ja) * 2011-08-29 2013-03-07 Tokyo Ohka Kogyo Co Ltd 透明膜用の組成物、透明膜の形成方法、および透明膜
JP2017181798A (ja) * 2016-03-30 2017-10-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 低温硬化可能なネガ型感光性組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236800B2 (de) * 1974-02-28 1977-09-17
EP0021818B1 (de) * 1979-06-21 1983-10-05 Fujitsu Limited Elektronische Vorrichtung mit einer Mehrschicht-Bedrahtungsstruktur
JPS5828850A (ja) * 1981-08-12 1983-02-19 Fujitsu Ltd 半導体装置の製造方法
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS61250032A (ja) * 1985-04-30 1986-11-07 Hitachi Chem Co Ltd シラノ−ルオリゴマ−液の製造法

Also Published As

Publication number Publication date
KR870006141A (ko) 1987-07-09
JPS62230828A (ja) 1987-10-09
KR950008002B1 (ko) 1995-07-24
EP0226208B1 (de) 1991-11-21
EP0226208A3 (en) 1988-11-02
JPH0791509B2 (ja) 1995-10-04
EP0226208A2 (de) 1987-06-24
CA1281840C (en) 1991-03-19
MX169135B (es) 1993-06-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee