DE3789393D1 - Herstellungsverfahren von Halbleiter-Scheiben. - Google Patents

Herstellungsverfahren von Halbleiter-Scheiben.

Info

Publication number
DE3789393D1
DE3789393D1 DE87300050T DE3789393T DE3789393D1 DE 3789393 D1 DE3789393 D1 DE 3789393D1 DE 87300050 T DE87300050 T DE 87300050T DE 3789393 T DE3789393 T DE 3789393T DE 3789393 D1 DE3789393 D1 DE 3789393D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor wafers
wafers
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE87300050T
Other languages
English (en)
Other versions
DE3789393T2 (de
Inventor
Alex P Moffatt
Richard C Jackson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Solar Industries LP
Original Assignee
Siemens Solar Industries LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar Industries LP filed Critical Siemens Solar Industries LP
Publication of DE3789393D1 publication Critical patent/DE3789393D1/de
Application granted granted Critical
Publication of DE3789393T2 publication Critical patent/DE3789393T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE3789393T 1986-01-07 1987-01-06 Herstellungsverfahren von Halbleiter-Scheiben. Expired - Lifetime DE3789393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/816,923 US4773951A (en) 1986-01-07 1986-01-07 Method of manufacturing wafers of semiconductor material

Publications (2)

Publication Number Publication Date
DE3789393D1 true DE3789393D1 (de) 1994-04-28
DE3789393T2 DE3789393T2 (de) 1994-09-15

Family

ID=25221951

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789393T Expired - Lifetime DE3789393T2 (de) 1986-01-07 1987-01-06 Herstellungsverfahren von Halbleiter-Scheiben.

Country Status (4)

Country Link
US (1) US4773951A (de)
EP (1) EP0229687B1 (de)
JP (1) JP2513477B2 (de)
DE (1) DE3789393T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
JP2789983B2 (ja) * 1993-01-28 1998-08-27 信越半導体株式会社 加工誤差補正装置
US5529051A (en) * 1994-07-26 1996-06-25 At&T Corp. Method of preparing silicon wafers
JPH09509621A (ja) * 1994-11-24 1997-09-30 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ ドラム形状加工物を機械加工する方法、このような方法により製造されたドラム形状担体が設けられるｘ線診断装置及び写真複写機
US5832914A (en) * 1997-08-22 1998-11-10 Seh America, Inc. Ingot trimming method and apparatus
US5827111A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US6106365A (en) * 1998-11-06 2000-08-22 Seh America, Inc. Method and apparatus to control mounting pressure of semiconductor crystals
ITMO20030336A1 (it) * 2003-12-11 2005-06-12 Gabriele Santi Metodo per ottenere elementi laminari.
JP2007281210A (ja) * 2006-04-07 2007-10-25 Disco Abrasive Syst Ltd 基板切断方法および基板切断装置
JP2009178984A (ja) * 2008-01-31 2009-08-13 Jcm:Kk シリコンインゴット用角切断バンドソー装置及びシリコンインゴットの加工方法
US8425279B2 (en) * 2008-09-30 2013-04-23 Misubishi Polycrystalline Silicon America Corporation (MIPSA) Apparatus for manufacturing seeds for polycrystalline silicon manufacture
ITVI20080228A1 (it) * 2008-10-01 2010-04-02 Artimecc S R L Procedimento per il taglio di barre in silicio per ridurle in filamenti
JP5517156B2 (ja) * 2010-03-18 2014-06-11 株式会社岡本工作機械製作所 インゴットブロックの複合面取り加工装置
JP5286329B2 (ja) * 2010-06-18 2013-09-11 株式会社サンシン シリコンブロック又は四角柱状部材の面取加工方法及びその装置
DE102010063407A1 (de) * 2010-12-17 2012-06-21 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von Silicium-Dünnstäben
CN103434037A (zh) * 2013-08-30 2013-12-11 天津市环欧半导体材料技术有限公司 一种多晶棒料车削夹具及车削方法
CN111497043B (zh) * 2020-03-05 2022-04-05 秦皇岛本征晶体科技有限公司 一种氟化镁波片元件的制作方法
CN115703206A (zh) * 2021-08-09 2023-02-17 环球晶圆股份有限公司 晶棒治具组件与晶棒边抛机台

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL213347A (de) * 1955-12-30
DE1104074B (de) * 1957-07-30 1961-04-06 Telefunken Gmbh Verfahren zum Zerschneiden eines Halbleiter-Einkristalles, z. B. aus Germanium, fuer Halbleiter-anordnungen in duenne Scheiben, deren Schnittflaechen senkrecht zu einer gewuenschten Kristallachse liegen
DE1066282B (de) * 1958-03-26 1900-01-01
US3802412A (en) * 1972-06-08 1974-04-09 Kayex Corp Billet holder for cutting and slicing apparatus
US4331452A (en) * 1980-08-04 1982-05-25 Fairchild Camera And Instrument Corporation Apparatus for crystal shaping
US4487989A (en) * 1983-07-25 1984-12-11 Atlantic Richfield Company Contact for solar cell

Also Published As

Publication number Publication date
US4773951A (en) 1988-09-27
JP2513477B2 (ja) 1996-07-03
EP0229687A3 (en) 1989-02-15
EP0229687B1 (de) 1994-03-23
JPS62190731A (ja) 1987-08-20
DE3789393T2 (de) 1994-09-15
EP0229687A2 (de) 1987-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8327 Change in the person/name/address of the patent owner

Owner name: SHELL SOLAR INDUSTRIES LP (N.D.GES.D. STAATES DELA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE RAU, SCHNECK & HUEBNER, 90402 NUERNBERG