DE3577912D1 - Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen. - Google Patents

Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen.

Info

Publication number
DE3577912D1
DE3577912D1 DE8585903928T DE3577912T DE3577912D1 DE 3577912 D1 DE3577912 D1 DE 3577912D1 DE 8585903928 T DE8585903928 T DE 8585903928T DE 3577912 T DE3577912 T DE 3577912T DE 3577912 D1 DE3577912 D1 DE 3577912D1
Authority
DE
Germany
Prior art keywords
fabrication
semiconductor devices
interferometric methods
interferometric
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585903928T
Other languages
English (en)
Inventor
Aaron Heimann
Michael Moran
Joseph Schutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3577912D1 publication Critical patent/DE3577912D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
DE8585903928T 1984-08-21 1985-07-24 Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen. Expired - Fee Related DE3577912D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/642,931 US4680084A (en) 1984-08-21 1984-08-21 Interferometric methods and apparatus for device fabrication
PCT/US1985/001412 WO1986001591A1 (en) 1984-08-21 1985-07-24 Interferometric methods for device fabrication

Publications (1)

Publication Number Publication Date
DE3577912D1 true DE3577912D1 (de) 1990-06-28

Family

ID=24578645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585903928T Expired - Fee Related DE3577912D1 (de) 1984-08-21 1985-07-24 Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen.

Country Status (7)

Country Link
US (1) US4680084A (de)
EP (1) EP0192656B1 (de)
JP (1) JPH0784666B2 (de)
CA (1) CA1238987A (de)
DE (1) DE3577912D1 (de)
SG (1) SG76990G (de)
WO (1) WO1986001591A1 (de)

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JPS62257727A (ja) * 1986-05-01 1987-11-10 Fujitsu Ltd 半導体装置の製造方法
JPH0224502A (ja) * 1988-07-12 1990-01-26 Dainippon Screen Mfg Co Ltd 膜厚測定方法
US4972072A (en) * 1988-10-03 1990-11-20 Tritec Industries, Inc. System for detecting a film layer on an object
EP0396010A3 (de) * 1989-05-05 1991-03-27 Applied Materials, Inc. Verfahren und Vorrichtung zur Überwachung der Wachstums- und Ätzgeschwindigkeit von Materialien
US5100233A (en) * 1989-09-22 1992-03-31 Rockwell International Corporation Refractive index monitor for deposition of gradient-index films
US4988877A (en) * 1989-10-03 1991-01-29 Tencor Instruments Via hole checker
FR2665024B1 (fr) * 1990-07-20 1994-02-18 Jean Galvier Procede de determination de l'elimination complete d'une couche mince sur un substrat non plan.
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
US5225888A (en) * 1990-12-26 1993-07-06 International Business Machines Corporation Plasma constituent analysis by interferometric techniques
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US5372673A (en) * 1993-01-25 1994-12-13 Motorola, Inc. Method for processing a layer of material while using insitu monitoring and control
US5452091A (en) * 1993-03-22 1995-09-19 Nanometrics Incorporated Scatter correction in reflectivity measurements
US5588428A (en) * 1993-04-28 1996-12-31 The University Of Akron Method and apparatus for non-invasive volume and texture analysis
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
JPH07183194A (ja) * 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
FR2718231B1 (fr) * 1994-04-05 1996-06-21 Sofie Procédé et dispositif pour quantifier in situ la morphologie et l'épaisseur dans une zone localisée d'une couche superficielle en cours de traitement sur une structure à couches minces .
US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes
US5695601A (en) * 1995-12-27 1997-12-09 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method
US5982496A (en) * 1996-03-11 1999-11-09 Vlsi Technology, Inc. Thin film thickness and optimal focus measuring using reflectivity
US5956142A (en) * 1997-09-25 1999-09-21 Siemens Aktiengesellschaft Method of end point detection using a sinusoidal interference signal for a wet etch process
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6534242B2 (en) 1997-11-06 2003-03-18 Canon Kabushiki Kaisha Multiple exposure device formation
US6535779B1 (en) 1998-03-06 2003-03-18 Applied Materials, Inc. Apparatus and method for endpoint control and plasma monitoring
EP1125314A1 (de) 1998-07-10 2001-08-22 Applied Materials, Inc. Verbesserte endpunktbestimmung für einen substratfabrikationsprozess
JP3352405B2 (ja) 1998-09-10 2002-12-03 キヤノン株式会社 露光方法及びそれを用いたデバイス製造方法並びに半導体デバイス
US6228277B1 (en) 1998-10-14 2001-05-08 Lucent Technologies Inc. Etch endpoint detection
EP1089318A1 (de) * 1999-09-30 2001-04-04 Infineon Technologies AG Endpunktbestimmung einer Ätzprozessstufe
US6400458B1 (en) 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
WO2002065545A2 (en) 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6876455B1 (en) 2002-08-01 2005-04-05 Lam Research Corporation Method and apparatus for broadband optical end point determination for in-situ film thickness measurement
US6989105B2 (en) * 2003-06-27 2006-01-24 International Business Machines Corporation Detection of hardmask removal using a selective etch
KR101010431B1 (ko) * 2003-12-27 2011-01-21 엘지디스플레이 주식회사 평판표시소자의 제조방법 및 장치
KR101117437B1 (ko) * 2003-12-27 2012-02-29 엘지디스플레이 주식회사 평판표시소자의 제조방법 및 장치
US7365405B2 (en) * 2004-04-27 2008-04-29 Potochnik Stephen J Metrology structure and methods
JP5219745B2 (ja) * 2007-11-14 2013-06-26 キヤノン株式会社 発光装置
US11823910B2 (en) * 2020-07-31 2023-11-21 Tokyo Electron Limited Systems and methods for improving planarity using selective atomic layer etching (ALE)
US11916013B2 (en) 2021-09-02 2024-02-27 International Business Machines Corporation Via interconnects including super vias
CN114061467A (zh) * 2021-12-10 2022-02-18 迈得特光学(安徽)有限公司 一种透镜厚度测量装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153665A (en) * 1976-06-16 1977-12-20 Hitachi Ltd Etching method of film
JPS6058793B2 (ja) * 1980-03-24 1985-12-21 日電アネルバ株式会社 プラズマ分光監視装置
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
JPS5812337A (ja) * 1981-07-16 1983-01-24 Nec Corp 半導体装置の製造方法
JPS58218121A (ja) * 1982-06-11 1983-12-19 Anelva Corp シリコンのドライエツチングモニタリング方法
US4454001A (en) * 1982-08-27 1984-06-12 At&T Bell Laboratories Interferometric method and apparatus for measuring etch rate and fabricating devices
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material

Also Published As

Publication number Publication date
CA1238987A (en) 1988-07-05
EP0192656B1 (de) 1990-05-23
SG76990G (en) 1990-11-23
JPS61503039A (ja) 1986-12-25
EP0192656A1 (de) 1986-09-03
JPH0784666B2 (ja) 1995-09-13
US4680084A (en) 1987-07-14
WO1986001591A1 (en) 1986-03-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee