BR8707876A - Processo de fabricacao de dispositivos semicondutores - Google Patents

Processo de fabricacao de dispositivos semicondutores

Info

Publication number
BR8707876A
BR8707876A BR8707876A BR8707876A BR8707876A BR 8707876 A BR8707876 A BR 8707876A BR 8707876 A BR8707876 A BR 8707876A BR 8707876 A BR8707876 A BR 8707876A BR 8707876 A BR8707876 A BR 8707876A
Authority
BR
Brazil
Prior art keywords
manufacturing process
semiconductor devices
devices manufacturing
semiconductor
manufacturing
Prior art date
Application number
BR8707876A
Other languages
English (en)
Inventor
William Noel Bolster
Stanley Arthur Marcus
Lincoln Ying
Original Assignee
M & T Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M & T Chemicals Inc filed Critical M & T Chemicals Inc
Publication of BR8707876A publication Critical patent/BR8707876A/pt

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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L2924/01—Chemical elements
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
BR8707876A 1986-11-13 1987-11-12 Processo de fabricacao de dispositivos semicondutores BR8707876A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93060086A 1986-11-13 1986-11-13
PCT/US1987/002952 WO1988003704A1 (en) 1986-11-13 1987-11-12 Attachment of semiconductor die to lead frame by means of an adhesive resin

Publications (1)

Publication Number Publication Date
BR8707876A true BR8707876A (pt) 1990-03-01

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EP (1) EP0333734A1 (pt)
JP (1) JPH01502868A (pt)
KR (1) KR910006966B1 (pt)
CN (1) CN87107692A (pt)
BR (1) BR8707876A (pt)
WO (1) WO1988003704A1 (pt)

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* Cited by examiner, † Cited by third party
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US5019535A (en) * 1989-03-28 1991-05-28 General Electric Company Die attachment method using nonconductive adhesive for use in high density interconnected assemblies
EP0409257A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0409004A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5237206A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5002818A (en) * 1989-09-05 1991-03-26 Hughes Aircraft Company Reworkable epoxy die-attach adhesive
DE4124053A1 (de) * 1991-07-19 1993-01-21 Siemens Ag Verfahren zum herstellen einer haftverbindung zwischen wenigstens einem bauteil und einem metallischen substrat
EP0645805B1 (en) * 1993-09-29 2000-11-29 Matsushita Electric Industrial Co., Ltd. Method for mounting a semiconductor device on a circuit board, and a circuit board with a semiconductor device mounted thereon
JP2000144082A (ja) * 1998-11-16 2000-05-26 Minnesota Mining & Mfg Co <3M> 熱硬化性接着剤組成物、接着剤、および接着剤の製造方法
KR100576886B1 (ko) * 2000-08-30 2006-05-03 앰코 테크놀로지 코리아 주식회사 반도체패키지의 제조 방법
JP3542080B2 (ja) 2001-03-30 2004-07-14 リンテック株式会社 半導体チップ担持用接着テープ・シート、半導体チップ担持体、半導体チップマウント方法および半導体チップ包装体
KR100819794B1 (ko) * 2002-04-02 2008-04-07 삼성테크윈 주식회사 리드프레임 및, 그것을 이용한 반도체 패키지 제조 방법
DE10240460A1 (de) 2002-08-29 2004-03-11 Infineon Technologies Ag Universelles Halbleitergehäuse mit vorvernetzten Kunststoffeinbettmassen und Verfahren zur Herstellung desselben
WO2009006284A2 (en) * 2007-06-28 2009-01-08 Sandisk Corporation Semiconductor die having a redistribution layer
JP6033734B2 (ja) * 2013-04-30 2016-11-30 日東電工株式会社 フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法
DE102015107724B4 (de) * 2015-04-02 2016-12-01 Heraeus Deutschland GmbH & Co. KG Verfahren zum Herstellen einer Substratanordnung, Substratanordnung, Verfahren zum Verbinden eines Elektronikbauteils mit einer Substratanordnung und Elektronikbauteil

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US4029628A (en) * 1974-05-22 1977-06-14 The United States Of America As Represented By The Secretary Of The Navy Bonding material for planar electronic device
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
EP0051165A1 (en) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Repairable IC package with thermoplastic chip attach
JPS57152135A (en) * 1981-03-13 1982-09-20 Yamagata Nippon Denki Kk Manufacture of semiconductor device
EP0065686A3 (en) * 1981-05-21 1984-10-10 General Electric Company Power device module
JPS59931A (ja) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp 半導体素子のマウント方法
JPS6045030A (ja) * 1983-08-23 1985-03-11 Hitachi Chem Co Ltd 半導体装置の製造法
JPS6066440A (ja) * 1983-09-21 1985-04-16 Fujitsu Ltd 半導体装置の製造方法
JPS6110246A (ja) * 1984-06-26 1986-01-17 Hitachi Chem Co Ltd 半導体装置の製造法
JPS61164233A (ja) * 1985-01-17 1986-07-24 Oki Electric Ind Co Ltd ダイボンデイング方法

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JPH01502868A (ja) 1989-09-28
CN87107692A (zh) 1988-05-25
WO1988003704A1 (en) 1988-05-19
EP0333734A1 (en) 1989-09-27
KR890700267A (ko) 1989-03-10
KR910006966B1 (ko) 1991-09-14

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