KR870009470A - 반도체 장치 제조 방법 - Google Patents

반도체 장치 제조 방법

Info

Publication number
KR870009470A
KR870009470A KR1019870002334A KR870002334A KR870009470A KR 870009470 A KR870009470 A KR 870009470A KR 1019870002334 A KR1019870002334 A KR 1019870002334A KR 870002334 A KR870002334 A KR 870002334A KR 870009470 A KR870009470 A KR 870009470A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019870002334A
Other languages
English (en)
Other versions
KR950005459B1 (ko
Inventor
오사오미 에노모또
가쯔오 고마쯔자끼
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Publication of KR870009470A publication Critical patent/KR870009470A/ko
Application granted granted Critical
Publication of KR950005459B1 publication Critical patent/KR950005459B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
KR1019870002334A 1986-03-17 1987-03-16 반도체 장치 제조 방법 KR950005459B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61060421A JPS62216246A (ja) 1986-03-17 1986-03-17 半導体装置の製造方法
JP61-060421 1986-03-17

Publications (2)

Publication Number Publication Date
KR870009470A true KR870009470A (ko) 1987-10-27
KR950005459B1 KR950005459B1 (ko) 1995-05-24

Family

ID=13141725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002334A KR950005459B1 (ko) 1986-03-17 1987-03-16 반도체 장치 제조 방법

Country Status (3)

Country Link
US (1) US4708768A (ko)
JP (1) JPS62216246A (ko)
KR (1) KR950005459B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518418A1 (en) * 1991-06-10 1992-12-16 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device whereby field oxide regions are formed in a surface of a silicon body through oxidation
JPH06216120A (ja) * 1992-12-03 1994-08-05 Motorola Inc 集積回路の電気的分離構造の形成方法
US5236862A (en) * 1992-12-03 1993-08-17 Motorola, Inc. Method of forming oxide isolation
FR2752644B1 (fr) * 1996-08-21 1998-10-02 Commissariat Energie Atomique Procede de realisation d'un transistor a contacts auto-alignes
KR100232899B1 (ko) * 1997-06-02 1999-12-01 김영환 반도체소자의 소자분리막 제조방법
TW536817B (en) * 2002-04-08 2003-06-11 Macronix Int Co Ltd Method of fabricating nitride read only memory
CN110957370B (zh) * 2019-12-27 2022-08-23 杰华特微电子股份有限公司 横向双扩散晶体管的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354896A (en) * 1980-08-05 1982-10-19 Texas Instruments Incorporated Formation of submicron substrate element
US4331708A (en) * 1980-11-04 1982-05-25 Texas Instruments Incorporated Method of fabricating narrow deep grooves in silicon
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
JPS6144442A (ja) * 1984-08-08 1986-03-04 Nec Corp 半導体装置の製造方法
JPH079930B2 (ja) * 1985-07-10 1995-02-01 松下電子工業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR950005459B1 (ko) 1995-05-24
JPS62216246A (ja) 1987-09-22
US4708768A (en) 1987-11-24

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