DE3785000D1 - Kontakte von halbleiterbauelementen. - Google Patents

Kontakte von halbleiterbauelementen.

Info

Publication number
DE3785000D1
DE3785000D1 DE8787116966T DE3785000T DE3785000D1 DE 3785000 D1 DE3785000 D1 DE 3785000D1 DE 8787116966 T DE8787116966 T DE 8787116966T DE 3785000 T DE3785000 T DE 3785000T DE 3785000 D1 DE3785000 D1 DE 3785000D1
Authority
DE
Germany
Prior art keywords
contacts
semiconductor components
semiconductor
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787116966T
Other languages
English (en)
Other versions
DE3785000T2 (de
Inventor
Shuichi C O Patent Divi Samata
Yoshiaki C O Patent Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3785000D1 publication Critical patent/DE3785000D1/de
Application granted granted Critical
Publication of DE3785000T2 publication Critical patent/DE3785000T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
DE8787116966T 1986-11-19 1987-11-17 Kontakte von halbleiterbauelementen. Expired - Lifetime DE3785000T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61275801A JPS63128750A (ja) 1986-11-19 1986-11-19 半導体装置

Publications (2)

Publication Number Publication Date
DE3785000D1 true DE3785000D1 (de) 1993-04-29
DE3785000T2 DE3785000T2 (de) 1993-09-16

Family

ID=17560599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787116966T Expired - Lifetime DE3785000T2 (de) 1986-11-19 1987-11-17 Kontakte von halbleiterbauelementen.

Country Status (5)

Country Link
US (1) US5116780A (de)
EP (1) EP0268266B1 (de)
JP (1) JPS63128750A (de)
KR (1) KR900008147B1 (de)
DE (1) DE3785000T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130203A (en) * 1988-07-28 1992-07-14 Nippon Leakless Industry Co., Ltd. Metal gasket and method of producing the same
US5378652A (en) * 1989-04-19 1995-01-03 Kabushiki Kaisha Toshiba Method of making a through hole in multi-layer insulating films
US5291058A (en) * 1989-04-19 1994-03-01 Kabushiki Kaisha Toshiba Semiconductor device silicon via fill formed in multiple dielectric layers
KR900019195A (ko) * 1989-05-27 1990-12-24 이만용 디램장치의 고집적화방법
US5629218A (en) * 1989-12-19 1997-05-13 Texas Instruments Incorporated Method for forming a field-effect transistor including a mask body and source/drain contacts
KR100200297B1 (ko) * 1995-06-30 1999-06-15 김영환 반도체 소자의 콘택홀 형성방법
US6815762B2 (en) 1997-05-30 2004-11-09 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines
JP3563530B2 (ja) * 1996-05-31 2004-09-08 株式会社日立製作所 半導体集積回路装置
US5879998A (en) * 1997-07-09 1999-03-09 Advanced Micro Devices, Inc. Adaptively controlled, self-aligned, short channel device and method for manufacturing same
KR100372640B1 (ko) * 2000-06-28 2003-02-17 주식회사 하이닉스반도체 선택적 에피택셜 성장을 이용한 콘택 플러그 형성방법
US6303450B1 (en) * 2000-11-21 2001-10-16 International Business Machines Corporation CMOS device structures and method of making same
KR100632036B1 (ko) * 2002-12-30 2006-10-04 동부일렉트로닉스 주식회사 반도체 메모리 소자의 제조 방법
JP2009147035A (ja) * 2007-12-13 2009-07-02 Seiko Instruments Inc 半導体装置およびその製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2225374B2 (de) * 1971-05-28 1977-06-02 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Verfahren zum herstellen eines mos-feldeffekttransistors
JPS49115649A (de) * 1973-03-07 1974-11-05
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US4364078A (en) * 1978-08-15 1982-12-14 Synertek Edge barrier of polysilicon and metal for integrated circuit chips
US4309224A (en) * 1978-10-06 1982-01-05 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
JPS55138874A (en) * 1979-04-18 1980-10-30 Fujitsu Ltd Semiconductor device and method of fabricating the same
US4355454A (en) * 1979-09-05 1982-10-26 Texas Instruments Incorporated Coating device with As2 -O3 -SiO2
JPS5737829A (en) * 1980-08-20 1982-03-02 Fujitsu Ltd Manufacture of semiconductor device
US4403394A (en) * 1980-12-17 1983-09-13 International Business Machines Corporation Formation of bit lines for ram device
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
JPS5968949A (ja) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS59201461A (ja) * 1983-04-28 1984-11-15 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
US4636834A (en) * 1983-12-12 1987-01-13 International Business Machines Corporation Submicron FET structure and method of making
JPS60186051A (ja) * 1984-03-05 1985-09-21 Hitachi Ltd Ｃｍｏｓ半導体装置およびその製造方法
JPS60195972A (ja) * 1984-03-19 1985-10-04 Hitachi Ltd 半導体装置の製造方法
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
US4746219A (en) * 1986-03-07 1988-05-24 Texas Instruments Incorporated Local interconnect
JPS62245657A (ja) * 1986-04-18 1987-10-26 Toshiba Corp 半導体装置の製造方法
JPH0674675A (ja) * 1992-08-31 1994-03-18 Toshiba Corp 積層体熱交換器及び積層体熱交換器の製造方法

Also Published As

Publication number Publication date
EP0268266A3 (en) 1990-01-31
EP0268266B1 (de) 1993-03-24
EP0268266A2 (de) 1988-05-25
KR880006777A (ko) 1988-07-25
KR900008147B1 (ko) 1990-11-03
JPS63128750A (ja) 1988-06-01
DE3785000T2 (de) 1993-09-16
US5116780A (en) 1992-05-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)