KR880006777A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR880006777A
KR880006777A KR870013031A KR870013031A KR880006777A KR 880006777 A KR880006777 A KR 880006777A KR 870013031 A KR870013031 A KR 870013031A KR 870013031 A KR870013031 A KR 870013031A KR 880006777 A KR880006777 A KR 880006777A
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KR
South Korea
Prior art keywords
semiconductor
layer
opening
silicon oxide
silicon
Prior art date
Application number
KR870013031A
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English (en)
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KR900008147B1 (ko
Inventor
수이치 사마타
요시아키 마츠시타
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880006777A publication Critical patent/KR880006777A/ko
Application granted granted Critical
Publication of KR900008147B1 publication Critical patent/KR900008147B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예를 나타낸 단면도.
제2도는 제2도에 따른 실시예의 효과를 설명하기 위한 특성도.
제3도는 본 발명의 구체적인 예를 나타낸 단면도.
제4도는 종래 장치를 설명하기 위한 단면도.
*도면의 주요부분에 대한 부호의 실명
1 : 반도체기관 2 : 절연막
3 : 게이트전극 4 : 피일드산화막
5 : 비도우프(nondope) CVD SiO2막 6 : BPSG막
7 : 실리콘층 8 : 소오스
9 : 드레인 11 : Al배선(Al막)

Claims (4)

  1. 반도체기판상의 배선접촉부에 있어서, 상기 반도체기판상의 제1도전헝확산층 일부에 개구부를 갖춘 절연층이 그 절연층중의 불순물을 반도체중에 존재시킨 경우 그 반도체의 도전형을 제1도전형으로 하는 불순물을 함유한 실리콘산화물층을 갖추어 상기 개구부내의 제1도전형 반도체층이 상기 실리콘산화물층에 접하는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 반드체기판이 실리콘기판이고, 실리콘산화물층이 인 또는 비소를 함유한 PSG, AsSG, BPSG, BAsSG, PAsSG, BPAsSG중 어느것이며, 개구부내의 반도체층이 선택기상성장법으로 형성된 N형 실리콘인 것을 특징으로 하는 반도체장치.
  3. 제l항에 있어서, 반도체기판이 실리콘기판이고, 실리콘산화물층이 붕소를 함유한 BSG, BAsSG중 어느 것이며, 개구부내의 반도체층이 선택기상성장법으로 형성된 P형 실리콘인 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 개구부내의 제1도전형 반도체층 내부의 평균불순물농도가 4×1018Cm-3이상인 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870013031A 1986-11-19 1987-11-19 반도체장치 KR900008147B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-275801 1986-11-19
JP86-275801 1986-11-19
JP61275801A JPS63128750A (ja) 1986-11-19 1986-11-19 半導体装置

Publications (2)

Publication Number Publication Date
KR880006777A true KR880006777A (ko) 1988-07-25
KR900008147B1 KR900008147B1 (ko) 1990-11-03

Family

ID=17560599

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013031A KR900008147B1 (ko) 1986-11-19 1987-11-19 반도체장치

Country Status (5)

Country Link
US (1) US5116780A (ko)
EP (1) EP0268266B1 (ko)
JP (1) JPS63128750A (ko)
KR (1) KR900008147B1 (ko)
DE (1) DE3785000T2 (ko)

Families Citing this family (13)

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US5130203A (en) * 1988-07-28 1992-07-14 Nippon Leakless Industry Co., Ltd. Metal gasket and method of producing the same
US5378652A (en) * 1989-04-19 1995-01-03 Kabushiki Kaisha Toshiba Method of making a through hole in multi-layer insulating films
US5291058A (en) * 1989-04-19 1994-03-01 Kabushiki Kaisha Toshiba Semiconductor device silicon via fill formed in multiple dielectric layers
KR900019195A (ko) * 1989-05-27 1990-12-24 이만용 디램장치의 고집적화방법
US5629218A (en) * 1989-12-19 1997-05-13 Texas Instruments Incorporated Method for forming a field-effect transistor including a mask body and source/drain contacts
KR100200297B1 (ko) * 1995-06-30 1999-06-15 김영환 반도체 소자의 콘택홀 형성방법
JP3563530B2 (ja) * 1996-05-31 2004-09-08 株式会社日立製作所 半導体集積回路装置
US6815762B2 (en) 1997-05-30 2004-11-09 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines
US5879998A (en) * 1997-07-09 1999-03-09 Advanced Micro Devices, Inc. Adaptively controlled, self-aligned, short channel device and method for manufacturing same
KR100372640B1 (ko) * 2000-06-28 2003-02-17 주식회사 하이닉스반도체 선택적 에피택셜 성장을 이용한 콘택 플러그 형성방법
US6303450B1 (en) * 2000-11-21 2001-10-16 International Business Machines Corporation CMOS device structures and method of making same
KR100632036B1 (ko) * 2002-12-30 2006-10-04 동부일렉트로닉스 주식회사 반도체 메모리 소자의 제조 방법
JP2009147035A (ja) * 2007-12-13 2009-07-02 Seiko Instruments Inc 半導体装置およびその製造方法

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Also Published As

Publication number Publication date
JPS63128750A (ja) 1988-06-01
EP0268266B1 (en) 1993-03-24
EP0268266A2 (en) 1988-05-25
DE3785000T2 (de) 1993-09-16
US5116780A (en) 1992-05-26
EP0268266A3 (en) 1990-01-31
DE3785000D1 (de) 1993-04-29
KR900008147B1 (ko) 1990-11-03

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