WO2013103140A1 - パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 - Google Patents
パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 Download PDFInfo
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- WO2013103140A1 WO2013103140A1 PCT/JP2012/084159 JP2012084159W WO2013103140A1 WO 2013103140 A1 WO2013103140 A1 WO 2013103140A1 JP 2012084159 W JP2012084159 W JP 2012084159W WO 2013103140 A1 WO2013103140 A1 WO 2013103140A1
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- Prior art keywords
- passivation film
- composition
- forming
- semiconductor substrate
- layer
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- 238000002161 passivation Methods 0.000 title claims abstract description 328
- 239000000203 mixture Substances 0.000 title claims abstract description 227
- 239000000758 substrate Substances 0.000 title claims description 196
- 239000004065 semiconductor Substances 0.000 title claims description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 67
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 8
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 32
- 125000004432 carbon atom Chemical group C* 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000005304 joining Methods 0.000 claims description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 133
- 229910052782 aluminium Inorganic materials 0.000 description 65
- 238000000034 method Methods 0.000 description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 60
- 238000003860 storage Methods 0.000 description 56
- 238000009792 diffusion process Methods 0.000 description 51
- 239000000243 solution Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000001856 Ethyl cellulose Substances 0.000 description 31
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 31
- 235000019325 ethyl cellulose Nutrition 0.000 description 31
- 229920001249 ethyl cellulose Polymers 0.000 description 30
- 230000000694 effects Effects 0.000 description 29
- -1 aluminum compound Chemical class 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- 230000000740 bleeding effect Effects 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 18
- 238000007639 printing Methods 0.000 description 17
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 16
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 16
- 238000002156 mixing Methods 0.000 description 16
- 229940116411 terpineol Drugs 0.000 description 16
- 239000013522 chelant Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000002003 electrode paste Substances 0.000 description 11
- 238000007650 screen-printing Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 239000011254 layer-forming composition Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 5
- 229940093858 ethyl acetoacetate Drugs 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical group CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 description 2
- MQGIBEAIDUOVOH-UHFFFAOYSA-N 1-[2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOCCOCCCC MQGIBEAIDUOVOH-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- FEBUJFMRSBAMES-UHFFFAOYSA-N 2-[(2-{[3,5-dihydroxy-2-(hydroxymethyl)-6-phosphanyloxan-4-yl]oxy}-3,5-dihydroxy-6-({[3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxy}methyl)oxan-4-yl)oxy]-3,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl phosphinite Chemical class OC1C(O)C(O)C(CO)OC1OCC1C(O)C(OC2C(C(OP)C(O)C(CO)O2)O)C(O)C(OC2C(C(CO)OC(P)C2O)O)O1 FEBUJFMRSBAMES-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 241000416162 Astragalus gummifer Species 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004375 Dextrin Substances 0.000 description 2
- 229920001353 Dextrin Polymers 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QVHMSMOUDQXMRS-UHFFFAOYSA-N PPG n4 Chemical compound CC(O)COC(C)COC(C)COC(C)CO QVHMSMOUDQXMRS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229920001615 Tragacanth Chemical class 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 2
- MQPPCKJJFDNPHJ-UHFFFAOYSA-K aluminum;3-oxohexanoate Chemical compound [Al+3].CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O.CCCC(=O)CC([O-])=O MQPPCKJJFDNPHJ-UHFFFAOYSA-K 0.000 description 2
- YNCDEEFMDXHURQ-UHFFFAOYSA-N aluminum;ethyl 3-oxobutanoate Chemical compound [Al].CCOC(=O)CC(C)=O YNCDEEFMDXHURQ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000007514 bases Chemical class 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- RDASHQZXQNLNMG-UHFFFAOYSA-N butan-2-olate;di(propan-2-yloxy)alumanylium Chemical compound CCC(C)O[Al](OC(C)C)OC(C)C RDASHQZXQNLNMG-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N caprylic alcohol Natural products CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 235000019425 dextrin Nutrition 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XAOGXQMKWQFZEM-UHFFFAOYSA-N isoamyl propanoate Chemical compound CCC(=O)OCCC(C)C XAOGXQMKWQFZEM-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- 235000010487 tragacanth Nutrition 0.000 description 2
- 239000000196 tragacanth Chemical class 0.000 description 2
- 229940116362 tragacanth Drugs 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 description 2
- WTARULDDTDQWMU-RKDXNWHRSA-N (+)-β-pinene Chemical compound C1[C@H]2C(C)(C)[C@@H]1CCC2=C WTARULDDTDQWMU-RKDXNWHRSA-N 0.000 description 1
- WTARULDDTDQWMU-IUCAKERBSA-N (-)-Nopinene Natural products C1[C@@H]2C(C)(C)[C@H]1CCC2=C WTARULDDTDQWMU-IUCAKERBSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- HQSLKNLISLWZQH-UHFFFAOYSA-N 1-(2-propoxyethoxy)propane Chemical compound CCCOCCOCCC HQSLKNLISLWZQH-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- UOWSVNMPHMJCBZ-UHFFFAOYSA-N 1-[2-(2-butoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCCCC UOWSVNMPHMJCBZ-UHFFFAOYSA-N 0.000 description 1
- JRRDISHSXWGFRF-UHFFFAOYSA-N 1-[2-(2-ethoxyethoxy)ethoxy]-2-methoxyethane Chemical compound CCOCCOCCOCCOC JRRDISHSXWGFRF-UHFFFAOYSA-N 0.000 description 1
- HYLLZXPMJRMUHH-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOC HYLLZXPMJRMUHH-UHFFFAOYSA-N 0.000 description 1
- MBRRDORCFVPYMA-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]propane Chemical compound CCCOCCOCCOC MBRRDORCFVPYMA-UHFFFAOYSA-N 0.000 description 1
- BOGFHOWTVGAYFK-UHFFFAOYSA-N 1-[2-(2-propoxyethoxy)ethoxy]propane Chemical compound CCCOCCOCCOCCC BOGFHOWTVGAYFK-UHFFFAOYSA-N 0.000 description 1
- KTSVVTQTKRGWGU-UHFFFAOYSA-N 1-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOCCCC KTSVVTQTKRGWGU-UHFFFAOYSA-N 0.000 description 1
- OHRSSDYDJRJIMN-UHFFFAOYSA-N 1-[2-[2-(2-butoxypropoxy)propoxy]propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCC(C)OCCCC OHRSSDYDJRJIMN-UHFFFAOYSA-N 0.000 description 1
- YZWVMKLQNYGKLJ-UHFFFAOYSA-N 1-[2-[2-(2-ethoxyethoxy)ethoxy]ethoxy]-2-methoxyethane Chemical compound CCOCCOCCOCCOCCOC YZWVMKLQNYGKLJ-UHFFFAOYSA-N 0.000 description 1
- JVMKCHOJVQIXQN-UHFFFAOYSA-N 1-[2-[2-[2-(2-butoxypropoxy)propoxy]propoxy]propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCC(C)OCC(C)OCCCC JVMKCHOJVQIXQN-UHFFFAOYSA-N 0.000 description 1
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- JXFITNNCZLPZNX-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OC JXFITNNCZLPZNX-UHFFFAOYSA-N 0.000 description 1
- KIAMPLQEZAMORJ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxyethoxy)ethoxy]ethane Chemical compound CCOCCOCCOCCOCC KIAMPLQEZAMORJ-UHFFFAOYSA-N 0.000 description 1
- ORRRIJVZQZKAKQ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxypropoxy)propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OCC ORRRIJVZQZKAKQ-UHFFFAOYSA-N 0.000 description 1
- SFXVPXODAPMPMQ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-methoxypropoxy)propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OC SFXVPXODAPMPMQ-UHFFFAOYSA-N 0.000 description 1
- FXAFMVDJGZBDEP-UHFFFAOYSA-N 1-ethoxy-2-[2-[2-(2-ethoxypropoxy)propoxy]propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OCC(C)OCC FXAFMVDJGZBDEP-UHFFFAOYSA-N 0.000 description 1
- MCSTUOMMIRPEMK-UHFFFAOYSA-N 1-ethoxy-2-[2-[2-(2-methoxypropoxy)propoxy]propoxy]propane Chemical compound C(C)OCC(OCC(OCC(OCC(C)OC)C)C)C MCSTUOMMIRPEMK-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- BAWUFGWWCWMUNU-UHFFFAOYSA-N 1-hexylpyrrolidin-2-one Chemical compound CCCCCCN1CCCC1=O BAWUFGWWCWMUNU-UHFFFAOYSA-N 0.000 description 1
- RERATEUBWLKDFE-UHFFFAOYSA-N 1-methoxy-2-[2-(2-methoxypropoxy)propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OC RERATEUBWLKDFE-UHFFFAOYSA-N 0.000 description 1
- ROSYHLFNMZTEKZ-UHFFFAOYSA-N 1-methoxy-2-[2-[2-(2-methoxypropoxy)propoxy]propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OCC(C)OC ROSYHLFNMZTEKZ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 description 1
- JOERQAIRIDZWHX-UHFFFAOYSA-N 1-propoxy-2-(2-propoxypropoxy)propane Chemical compound CCCOCC(C)OCC(C)OCCC JOERQAIRIDZWHX-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-N 2,2-diethylpropanedioic acid Chemical compound CCC(CC)(C(O)=O)C(O)=O LTMRRSWNXVJMBA-UHFFFAOYSA-N 0.000 description 1
- AWBIJARKDOFDAN-UHFFFAOYSA-N 2,5-dimethyl-1,4-dioxane Chemical compound CC1COC(C)CO1 AWBIJARKDOFDAN-UHFFFAOYSA-N 0.000 description 1
- CEGGECULKVTYMM-UHFFFAOYSA-N 2,6-dimethylheptane-3,5-dione Chemical compound CC(C)C(=O)CC(=O)C(C)C CEGGECULKVTYMM-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 description 1
- GHGDAJBKEFQCBH-UHFFFAOYSA-N 2-(2-heptan-2-yloxyethoxy)ethanol Chemical compound CCCCCC(C)OCCOCCO GHGDAJBKEFQCBH-UHFFFAOYSA-N 0.000 description 1
- CCGHAVKVTFDDJU-UHFFFAOYSA-N 2-(2-heptan-2-yloxypropoxy)propan-1-ol Chemical compound CC(CCCCC)OC(C)COC(C)CO CCGHAVKVTFDDJU-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HQLKZWRSOHTERR-UHFFFAOYSA-N 2-Ethylbutyl acetate Chemical compound CCC(CC)COC(C)=O HQLKZWRSOHTERR-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- ZYXNLVMBIHVDRH-UHFFFAOYSA-N 2-Methylpropyl 3-oxobutanoate Chemical compound CC(C)COC(=O)CC(C)=O ZYXNLVMBIHVDRH-UHFFFAOYSA-N 0.000 description 1
- GQKZRWSUJHVIPE-UHFFFAOYSA-N 2-Pentanol acetate Chemical compound CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- NNPUIIGTWSZCHE-UHFFFAOYSA-N 2-[2-(2-heptan-2-yloxypropoxy)propoxy]propan-1-ol Chemical compound CC(CCCCC)OC(C)COC(C)COC(C)CO NNPUIIGTWSZCHE-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- SDHQGBWMLCBNSM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]ethyl acetate Chemical compound COCCOCCOCCOC(C)=O SDHQGBWMLCBNSM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- AYIVTHITSLAIOM-UHFFFAOYSA-N 2-[2-(2-pentan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CCCC(C)OCCOCCOCCO AYIVTHITSLAIOM-UHFFFAOYSA-N 0.000 description 1
- YIXPMXHWOUQTBS-UHFFFAOYSA-N 2-[2-(2-pentan-2-yloxypropoxy)propoxy]propan-1-ol Chemical compound CC(CCC)OC(C)COC(C)COC(C)CO YIXPMXHWOUQTBS-UHFFFAOYSA-N 0.000 description 1
- MXVMODFDROLTFD-UHFFFAOYSA-N 2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCOCCOCCOCCOCCO MXVMODFDROLTFD-UHFFFAOYSA-N 0.000 description 1
- LKAIVSMFSUHTGS-UHFFFAOYSA-N 2-[2-[2-(2-heptan-2-yloxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCCC(C)OCCOCCOCCOCCO LKAIVSMFSUHTGS-UHFFFAOYSA-N 0.000 description 1
- SHHZIUZGAHMEJB-UHFFFAOYSA-N 2-[2-[2-(2-heptan-2-yloxypropoxy)propoxy]propoxy]propan-1-ol Chemical compound CC(CCCCC)OC(C)COC(C)COC(C)COC(C)CO SHHZIUZGAHMEJB-UHFFFAOYSA-N 0.000 description 1
- JPKNIKSLAPWTRU-UHFFFAOYSA-N 2-[2-[2-(2-pentan-2-yloxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCC(C)OCCOCCOCCOCCO JPKNIKSLAPWTRU-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- BYVKCQBOHJQWIO-UHFFFAOYSA-N 2-ethoxyethyl propanoate Chemical compound CCOCCOC(=O)CC BYVKCQBOHJQWIO-UHFFFAOYSA-N 0.000 description 1
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- VAHNPAMCADTGIO-UHFFFAOYSA-N 2-methoxyethyl propanoate Chemical compound CCC(=O)OCCOC VAHNPAMCADTGIO-UHFFFAOYSA-N 0.000 description 1
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- PKNKULBDCRZSBT-UHFFFAOYSA-N 3,4,5-trimethylnonan-2-one Chemical compound CCCCC(C)C(C)C(C)C(C)=O PKNKULBDCRZSBT-UHFFFAOYSA-N 0.000 description 1
- HYDWALOBQJFOMS-UHFFFAOYSA-N 3,6,9,12,15-pentaoxaheptadecane Chemical compound CCOCCOCCOCCOCCOCC HYDWALOBQJFOMS-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- XHRGPLDMNNGHCX-UHFFFAOYSA-N 3-Methylbutyl 3-oxobutanoate Chemical compound CC(C)CCOC(=O)CC(C)=O XHRGPLDMNNGHCX-UHFFFAOYSA-N 0.000 description 1
- MBXOOYPCIDHXGH-UHFFFAOYSA-N 3-butylpentane-2,4-dione Chemical compound CCCCC(C(C)=O)C(C)=O MBXOOYPCIDHXGH-UHFFFAOYSA-N 0.000 description 1
- GUARKOVVHJSMRW-UHFFFAOYSA-N 3-ethylpentane-2,4-dione Chemical compound CCC(C(C)=O)C(C)=O GUARKOVVHJSMRW-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- GSOHKPVFCOWKPU-UHFFFAOYSA-N 3-methylpentane-2,4-dione Chemical compound CC(=O)C(C)C(C)=O GSOHKPVFCOWKPU-UHFFFAOYSA-N 0.000 description 1
- OCOBFMZGRJOSOU-UHFFFAOYSA-N 3-o-tert-butyl 1-o-ethyl propanedioate Chemical compound CCOC(=O)CC(=O)OC(C)(C)C OCOBFMZGRJOSOU-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- IGMOYJSFRIASIE-UHFFFAOYSA-N 6-Methylheptan-2,4-dione Chemical compound CC(C)CC(=O)CC(C)=O IGMOYJSFRIASIE-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000252073 Anguilliformes Species 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 239000007848 Bronsted acid Substances 0.000 description 1
- 239000003341 Bronsted base Substances 0.000 description 1
- REIYHFWZISXFKU-UHFFFAOYSA-N Butyl acetoacetate Chemical compound CCCCOC(=O)CC(C)=O REIYHFWZISXFKU-UHFFFAOYSA-N 0.000 description 1
- FIJCCWULVQJZBZ-UHFFFAOYSA-N C(C)C(C(=O)OC)(C(=O)OCCCC)CC Chemical compound C(C)C(C(=O)OC)(C(=O)OCCCC)CC FIJCCWULVQJZBZ-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229920000881 Modified starch Polymers 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- WTARULDDTDQWMU-UHFFFAOYSA-N Pseudopinene Natural products C1C2C(C)(C)C1CCC2=C WTARULDDTDQWMU-UHFFFAOYSA-N 0.000 description 1
- 229920002305 Schizophyllan Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- IPSOQTFPIWIGJT-UHFFFAOYSA-N acetic acid;1-propoxypropane Chemical compound CC(O)=O.CCCOCCC IPSOQTFPIWIGJT-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical group 0.000 description 1
- XCPQUQHBVVXMRQ-UHFFFAOYSA-N alpha-Fenchene Natural products C1CC2C(=C)CC1C2(C)C XCPQUQHBVVXMRQ-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- MVNCAPSFBDBCGF-UHFFFAOYSA-N alpha-pinene Natural products CC1=CCC23C1CC2C3(C)C MVNCAPSFBDBCGF-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- MQQXUGFEQSCYIA-OAWHIZORSA-M aluminum;(z)-4-ethoxy-4-oxobut-2-en-2-olate;propan-2-olate Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CCOC(=O)\C=C(\C)[O-] MQQXUGFEQSCYIA-OAWHIZORSA-M 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 229930006722 beta-pinene Natural products 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- ZCKJKAAKIXBAQX-UHFFFAOYSA-N butan-2-yl acetate;2-methylpropyl acetate Chemical compound CCC(C)OC(C)=O.CC(C)COC(C)=O ZCKJKAAKIXBAQX-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NFKGQHYUYGYHIS-UHFFFAOYSA-N dibutyl propanedioate Chemical compound CCCCOC(=O)CC(=O)OCCCC NFKGQHYUYGYHIS-UHFFFAOYSA-N 0.000 description 1
- UPQZOUHVTJNGFK-UHFFFAOYSA-N diethyl 2-methylpropanedioate Chemical compound CCOC(=O)C(C)C(=O)OCC UPQZOUHVTJNGFK-UHFFFAOYSA-N 0.000 description 1
- BYQFBFWERHXONI-UHFFFAOYSA-N diethyl 2-propan-2-ylpropanedioate Chemical compound CCOC(=O)C(C(C)C)C(=O)OCC BYQFBFWERHXONI-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- QRVSDVDFJFKYKA-UHFFFAOYSA-N dipropan-2-yl propanedioate Chemical compound CC(C)OC(=O)CC(=O)OC(C)C QRVSDVDFJFKYKA-UHFFFAOYSA-N 0.000 description 1
- LWIWFCDNJNZEKB-UHFFFAOYSA-N dipropyl propanedioate Chemical compound CCCOC(=O)CC(=O)OCCC LWIWFCDNJNZEKB-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- CLPHAYNBNTVRDI-UHFFFAOYSA-N ditert-butyl propanedioate Chemical compound CC(C)(C)OC(=O)CC(=O)OC(C)(C)C CLPHAYNBNTVRDI-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical group CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- XIGZBCUFFUBWDM-UHFFFAOYSA-N ethyl 2-acetylheptanoate Chemical compound CCCCCC(C(C)=O)C(=O)OCC XIGZBCUFFUBWDM-UHFFFAOYSA-N 0.000 description 1
- OKANYBNORCUPKZ-UHFFFAOYSA-N ethyl 2-ethyl-3-oxobutanoate Chemical compound CCOC(=O)C(CC)C(C)=O OKANYBNORCUPKZ-UHFFFAOYSA-N 0.000 description 1
- FNENWZWNOPCZGK-UHFFFAOYSA-N ethyl 2-methyl-3-oxobutanoate Chemical compound CCOC(=O)C(C)C(C)=O FNENWZWNOPCZGK-UHFFFAOYSA-N 0.000 description 1
- YZKPCVHTRBTTAX-UHFFFAOYSA-N ethyl 3-oxodecanoate Chemical compound CCCCCCCC(=O)CC(=O)OCC YZKPCVHTRBTTAX-UHFFFAOYSA-N 0.000 description 1
- UKRVECBFDMVBPU-UHFFFAOYSA-N ethyl 3-oxoheptanoate Chemical compound CCCCC(=O)CC(=O)OCC UKRVECBFDMVBPU-UHFFFAOYSA-N 0.000 description 1
- KQWWVLVLVYYYDT-UHFFFAOYSA-N ethyl 3-oxohexanoate Chemical compound CCCC(=O)CC(=O)OCC KQWWVLVLVYYYDT-UHFFFAOYSA-N 0.000 description 1
- UDRCONFHWYGWFI-UHFFFAOYSA-N ethyl 3-oxopentanoate Chemical compound CCOC(=O)CC(=O)CC UDRCONFHWYGWFI-UHFFFAOYSA-N 0.000 description 1
- VUYNTIDSHCJIKF-UHFFFAOYSA-N ethyl 4,4-dimethyl-3-oxopentanoate Chemical compound CCOC(=O)CC(=O)C(C)(C)C VUYNTIDSHCJIKF-UHFFFAOYSA-N 0.000 description 1
- XCLDSQRVMMXWMS-UHFFFAOYSA-N ethyl 4-methyl-3-oxopentanoate Chemical compound CCOC(=O)CC(=O)C(C)C XCLDSQRVMMXWMS-UHFFFAOYSA-N 0.000 description 1
- PABMAXDDDJHKJZ-UHFFFAOYSA-N ethyl acetate;hexanoic acid Chemical compound CCOC(C)=O.CCCCCC(O)=O PABMAXDDDJHKJZ-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- LCWMKIHBLJLORW-UHFFFAOYSA-N gamma-carene Natural products C1CC(=C)CC2C(C)(C)C21 LCWMKIHBLJLORW-UHFFFAOYSA-N 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- YAVJSVDUZGIQPQ-UHFFFAOYSA-N heptyl 3-oxobutanoate Chemical compound CCCCCCCOC(=O)CC(C)=O YAVJSVDUZGIQPQ-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 1
- RXTNIJMLAQNTEG-UHFFFAOYSA-N hexan-2-yl acetate Chemical compound CCCCC(C)OC(C)=O RXTNIJMLAQNTEG-UHFFFAOYSA-N 0.000 description 1
- QNZLAXONNWOLJY-UHFFFAOYSA-N hexyl 3-oxobutanoate Chemical compound CCCCCCOC(=O)CC(C)=O QNZLAXONNWOLJY-UHFFFAOYSA-N 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 229920013819 hydroxyethyl ethylcellulose Polymers 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- BUTPBERGMJVRBM-UHFFFAOYSA-N methanol;methylsulfinylmethane Chemical compound OC.CS(C)=O BUTPBERGMJVRBM-UHFFFAOYSA-N 0.000 description 1
- VNKYTQGIUYNRMY-UHFFFAOYSA-N methoxypropane Chemical compound CCCOC VNKYTQGIUYNRMY-UHFFFAOYSA-N 0.000 description 1
- IMXBRVLCKXGWSS-UHFFFAOYSA-N methyl 2-cyclohexylacetate Chemical compound COC(=O)CC1CCCCC1 IMXBRVLCKXGWSS-UHFFFAOYSA-N 0.000 description 1
- XJMIXEAZMCTAGH-UHFFFAOYSA-N methyl 3-oxopentanoate Chemical compound CCC(=O)CC(=O)OC XJMIXEAZMCTAGH-UHFFFAOYSA-N 0.000 description 1
- XTXCFTMJPRXBBC-UHFFFAOYSA-N methyl 4,4-dimethyl-3-oxopentanoate Chemical compound COC(=O)CC(=O)C(C)(C)C XTXCFTMJPRXBBC-UHFFFAOYSA-N 0.000 description 1
- HNNFDXWDCFCVDM-UHFFFAOYSA-N methyl 4-methyl-3-oxopentanoate Chemical compound COC(=O)CC(=O)C(C)C HNNFDXWDCFCVDM-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 235000019426 modified starch Nutrition 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- PRRBQHNMYJRHFW-UHFFFAOYSA-N n-valeryl acetic acid Chemical compound CCCCC(=O)CC(O)=O PRRBQHNMYJRHFW-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- IKYDDBGYKFPTGF-UHFFFAOYSA-N octyl 3-oxobutanoate Chemical compound CCCCCCCCOC(=O)CC(C)=O IKYDDBGYKFPTGF-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 1
- PFTIWTQFHWICDR-UHFFFAOYSA-N pentan-3-yl 3-oxobutanoate Chemical compound CCC(CC)OC(=O)CC(C)=O PFTIWTQFHWICDR-UHFFFAOYSA-N 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- IDZAUPYMMSSVHP-UHFFFAOYSA-N pentyl 3-oxobutanoate Chemical compound CCCCCOC(=O)CC(C)=O IDZAUPYMMSSVHP-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- GVIIRWAJDFKJMJ-UHFFFAOYSA-N propan-2-yl 3-oxobutanoate Chemical compound CC(C)OC(=O)CC(C)=O GVIIRWAJDFKJMJ-UHFFFAOYSA-N 0.000 description 1
- DHGFMVMDBNLMKT-UHFFFAOYSA-N propyl 3-oxobutanoate Chemical compound CCCOC(=O)CC(C)=O DHGFMVMDBNLMKT-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000010413 sodium alginate Nutrition 0.000 description 1
- 239000000661 sodium alginate Substances 0.000 description 1
- 229940005550 sodium alginate Drugs 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 229930006978 terpinene Natural products 0.000 description 1
- 150000003507 terpinene derivatives Chemical class 0.000 description 1
- JKUYRAMKJLMYLO-UHFFFAOYSA-N tert-butyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OC(C)(C)C JKUYRAMKJLMYLO-UHFFFAOYSA-N 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical compound [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- MDDPTCUZZASZIQ-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]alumane Chemical compound [Al+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] MDDPTCUZZASZIQ-UHFFFAOYSA-N 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a composition for forming a passivation film, a semiconductor substrate with a passivation film and a manufacturing method thereof, a solar cell element and a manufacturing method thereof.
- n-type diffusion layer is uniformly formed by performing several tens of minutes at 800 ° C. to 900 ° C.
- n-type diffusion layers are formed not only on the front surface, which is the light receiving surface, but also on the side surface and the back surface. Therefore, side etching is performed to remove the n-type diffusion layer on the side surface.
- the n-type diffusion layer on the back surface needs to be converted into a p + -type diffusion layer.
- the n-type diffusion layer is converted to p.
- an ohmic contact is obtained.
- the aluminum electrode formed from the aluminum paste has low conductivity. Therefore, in order to reduce the sheet resistance, the aluminum electrode formed on the entire back surface usually has to have a thickness of about 10 ⁇ m to 20 ⁇ m after sintering. Furthermore, since the thermal expansion coefficient differs greatly between silicon and aluminum, a large internal stress is generated in the silicon substrate during the sintering and cooling process, causing damage to crystal grain boundaries, increasing crystal defects, and warping. .
- Such a passivation effect is generally called a field effect, and an aluminum oxide (Al 2 O 3 ) film or the like has been proposed as a material having a negative fixed charge (see, for example, Japanese Patent No. 4767110).
- Such a passivation film is generally formed by a method such as an ALD (Atomic Layer Deposition) method or a CVD (Chemical Vapor Deposition) method (see, for example, Journal of Applied Physics, 104 (2008), 113703).
- ALD Atomic Layer Deposition
- CVD Chemical Vapor Deposition
- the present invention has been made in view of the above-described conventional problems, and provides a passivation film-forming composition that can form a passivation film having a desired shape by a simple method and has excellent storage stability. This is the issue.
- Another object of the present invention is to provide a semiconductor substrate with a passivation film and a solar cell element using the composition for forming a passivation film. Furthermore, this invention makes it a subject to provide the manufacturing method of a semiconductor substrate with a passivation film, and a solar cell element using this composition for formation of a passivation film.
- a composition for forming a passivation film comprising an organoaluminum compound represented by the following general formula (I) and a resin.
- each R 1 independently represents an alkyl group having 1 to 8 carbon atoms.
- n represents an integer of 0 to 3.
- X 2 and X 3 each independently represent an oxygen atom or a methylene group.
- R 2 , R 3 and R 4 each independently represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms]
- each R 1 is independently an alkyl group having 1 to 4 carbon atoms.
- n is an integer of 1 to 3
- R 4 is independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. It is a composition for forming a passivation film as described.
- ⁇ 4> The composition for forming a passivation film according to any one of ⁇ 1> to ⁇ 3>, wherein the resin content is 0.1% by mass to 30% by mass.
- a passivation film which is a heat treatment layer of the composition for forming a passivation film according to any one of ⁇ 1> to ⁇ 4>, provided on a semiconductor substrate and on the entire surface or part of the semiconductor substrate. And a semiconductor substrate with a passivation film.
- ⁇ 6> A step of forming a composition layer on the entire surface or part of the semiconductor substrate using the passivation film forming composition according to any one of the above items ⁇ 1> to ⁇ 4>, and the composition And a step of forming a passivation film by heat-treating the layer.
- ⁇ 8> One of the surfaces of the semiconductor substrate having a pn junction formed by bonding a p-type layer and an n-type layer and having an electrode on at least one of the p-type layer and the n-type layer.
- a passivation film can be formed into a desired shape by a simple method, and a passivation film-forming composition having excellent storage stability can be provided.
- the semiconductor substrate with a passivation film and solar cell element using this composition for formation of a passivation film can be provided.
- the manufacturing method of the semiconductor substrate with a passivation film and solar cell element using this composition for formation of a passivation film can be provided.
- the term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even when it cannot be clearly distinguished from other processes. .
- a numerical range indicated using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the content of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. Means.
- composition for forming a passivation film of the present invention contains at least one organoaluminum compound represented by the following general formula (I) and at least one resin.
- the composition for forming a passivation film may further contain other components as necessary.
- each R 1 independently represents an alkyl group having 1 to 8 carbon atoms.
- n represents an integer of 0 to 3.
- X 2 and X 3 each independently represent an oxygen atom or a methylene group.
- R 2 , R 3 and R 4 each independently represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
- a plurality of groups represented by the same symbol may be the same or different.
- a passivation film having an excellent passivation effect is formed by applying a composition for forming a passivation film containing a specific organoaluminum compound and a resin to a semiconductor substrate to form a composition layer having a desired shape and then heat-treating the composition layer. Can be formed into a desired shape.
- the method of the present invention is a simple and highly productive method that does not require a vapor deposition apparatus or the like. Further, the passivation film can be formed in a desired shape without requiring a complicated process such as mask processing.
- the composition for forming a passivation film contains a specific organoaluminum compound, occurrence of problems such as gelation is suppressed, and storage stability with time is excellent.
- the passivation effect of a semiconductor substrate is measured by measuring the effective lifetime of minority carriers in a semiconductor substrate provided with a passivation film, using a device such as WT-2000PVN manufactured by Nippon Semilab Co., Ltd. It can be evaluated by measuring by the method.
- the effective lifetime ⁇ is expressed by the following equation (A) by the bulk lifetime ⁇ b inside the semiconductor substrate and the surface lifetime ⁇ s of the semiconductor substrate surface.
- A the effective lifetime ⁇
- the surface state density on the surface of the semiconductor substrate is small, ⁇ s increases, and as a result, the effective lifetime ⁇ increases.
- the bulk lifetime ⁇ b is increased and the effective lifetime ⁇ is increased. That is, by measuring the effective lifetime ⁇ , the interface characteristics of the passivation film / semiconductor substrate and the internal characteristics of the semiconductor substrate such as dangling bonds can be evaluated.
- the stability of the composition for forming a passivation film can be evaluated by a change in viscosity over time.
- the composition for forming a passivation film immediately after preparation has a shear viscosity ( ⁇ 0 ) at a shear rate of 1.0 s ⁇ 1 and a composition for forming a passivation film after storage at 25 ° C. for 30 days.
- the shear viscosity ( ⁇ 30 ) at a shear rate of 1.0 s ⁇ 1 can be evaluated by, for example, the rate of change in viscosity (%) over time.
- the rate of change in viscosity (%) over time is obtained by dividing the absolute value of the difference in shear viscosity immediately after preparation and 30 days later by the shear viscosity immediately after preparation, and is specifically calculated by the following equation.
- the viscosity change rate of the composition for forming a passivation film is preferably 30% or less, more preferably 20% or less, and still more preferably 10% or less.
- Viscosity change rate (%)
- the composition for forming a passivation film contains at least one organoaluminum compound represented by the general formula (I).
- the organoaluminum compound is a compound called aluminum alkoxide, aluminum chelate or the like, and preferably has an aluminum chelate structure in addition to the aluminum alkoxide structure. Further, as described in Nippon Seramikkusu Kyokai Gakujitsu Ronbunshi, 97 (1989) 369-399, the organoaluminum compound is converted into aluminum oxide (Al 2 O 3 ) by heat treatment.
- a passivation film having an excellent passivation effect can be formed by including the organoaluminum compound represented by the general formula (I) in the composition for forming a passivation film as follows. Yes. Aluminum oxide formed by heat-treating a composition for forming a passivation film containing an organoaluminum compound having a specific structure is likely to be in an amorphous state, causing defects such as aluminum atoms, and large negative fixation near the interface with the semiconductor substrate. It is thought that it can have a charge.
- This large negative fixed charge generates an electric field in the vicinity of the interface of the semiconductor substrate, so that the concentration of minority carriers can be reduced, and as a result, the recombination rate of carriers at the interface is suppressed, resulting in an excellent passivation effect. It is considered that a passivation film having the following can be formed.
- Tetracoordinate aluminum oxide is considered to have a structure in which the center of silicon dioxide (SiO 2 ) is isomorphously substituted from silicon to aluminum, and is formed as a negative charge source at the interface between silicon dioxide and aluminum oxide like zeolite and clay. It has been known.
- the state of the formed aluminum oxide can be confirmed by measuring an X-ray diffraction spectrum (XRD, X-ray diffraction). For example, it can be confirmed that the XRD has an amorphous structure by not showing a specific diffraction pattern.
- the negative fixed charge of aluminum oxide can be evaluated by a CV method (Capacitance Voltage measurement).
- the surface state density obtained from the CV method for the heat-treated material layer containing aluminum oxide formed from the composition for forming a passivation film of the present invention is the same as that of an aluminum oxide layer formed by ALD or CVD method. In some cases, the value may be large.
- the passivation film formed from the composition for forming a passivation film of the present invention has a large electric field effect and a decrease in the minority carrier concentration, thereby increasing the surface lifetime ⁇ s . Therefore, the surface state density is not a relative problem.
- each R 1 independently represents an alkyl group having 1 to 8 carbon atoms.
- the alkyl group represented by R 1 may be linear or branched. Specific examples of the alkyl group represented by R 1 include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, t-butyl group, hexyl group, octyl group, and ethylhexyl group.
- Etc is methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, t-butyl group, hexyl group, octyl group, and ethylhexyl group.
- the alkyl group represented by R 1 is preferably an unsubstituted alkyl group having 1 to 8 carbon atoms from the viewpoint of storage stability and a passivation effect, and is an unsubstituted alkyl group having 1 to 4 carbon atoms. More preferably.
- n represents an integer of 0 to 3. n is preferably an integer of 1 to 3 and more preferably 1 or 3 from the viewpoint of storage stability.
- X 2 and X 3 each independently represent an oxygen atom or a methylene group. From the viewpoint of storage stability, it is preferable that at least one of X 2 and X 3 is an oxygen atom.
- R 2 , R 3 and R 4 in the general formula (I) each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
- the alkyl group represented by R 2 , R 3 and R 4 may be linear or branched. Specific examples of the alkyl group represented by R 2 , R 3 and R 4 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a t-butyl group, and a hexyl group. Octyl group, ethylhexyl group and the like.
- R 2 and R 3 are each independently preferably a hydrogen atom or an unsubstituted alkyl group having 1 to 8 carbon atoms, and preferably a hydrogen atom or 1 to 4 carbon atoms.
- the unsubstituted alkyl group is more preferable.
- R 4 is preferably a hydrogen atom or an unsubstituted alkyl group having 1 to 8 carbon atoms from the viewpoint of storage stability and a passivation effect, and is a hydrogen atom or an unsubstituted alkyl group having 1 to 4 carbon atoms. More preferably.
- the organoaluminum compound represented by the general formula (I) is a compound in which n is 0 and R 1 is independently an alkyl group having 1 to 4 carbon atoms from the viewpoint of storage stability and a passivation effect, and n is 1 to 3, R 1 is independently an alkyl group having 1 to 4 carbon atoms, at least one of X 2 and X 3 is an oxygen atom, and R 2 and R 3 are each independently It is preferably at least one selected from the group consisting of a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 4 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and n is 0.
- R 1 is an unsubstituted alkyl group having 1 to 4 carbon atoms, and n is 1 ⁇ 3, R 1 is an unsubstituted alkyl group having 1 to 4 carbon atoms, X 2 and X at least one of the 3 is an oxygen atom, wherein R 2 or R 3 binds to atom is an alkyl group having 1 to 4 carbon atoms, when X 2 or X 3 is a methylene group, R 2 or R 3 binds to the methylene groups is a hydrogen atom, R 4 is more preferably at least one selected from the group consisting of compounds each having a hydrogen atom.
- the aluminum trialkoxide which is an organoaluminum compound represented by the general formula (I) and n is 0, include trimethoxyaluminum, triethoxyaluminum (aluminum ethylate), triisopropoxyaluminum (aluminum isopropylate), Examples thereof include trisec-butoxyaluminum (aluminum sec-butyrate), monosec-butoxy-diisopropoxyaluminum (monosec-butoxyaluminum diisopropylate), tritert-butoxyaluminum, and tri-n-butoxyaluminum.
- the organoaluminum compound represented by the general formula (I) and n is 1 to 3 can be prepared by mixing the aluminum trialkoxide with a compound having a specific structure having two carbonyl groups.
- a commercially available aluminum chelate compound may also be used.
- the aluminum trialkoxide and a compound having a specific structure having two carbonyl groups are mixed, at least a part of the alkoxide group of the aluminum trialkoxide is substituted with the compound having the specific structure to form an aluminum chelate structure.
- a solvent may be present, or heat treatment or addition of a catalyst may be performed.
- the compound having a specific structure having the two carbonyl groups is preferably at least one selected from the group consisting of ⁇ -diketone compounds, ⁇ -ketoester compounds and malonic acid diesters from the viewpoint of storage stability.
- Specific examples of the compound having a specific structure having two carbonyl groups include acetylacetone, 3-methyl-2,4-pentanedione, 2,3-pentanedione, 3-ethyl-2,4-pentanedione, 3- Butyl-2,4-pentanedione, 2,2,6,6-tetramethyl-3,5-heptanedione, 2,6-dimethyl-3,5-heptanedione, 6-methyl-2,4-heptanedione ⁇ -diketone compounds such as: methyl acetoacetate, ethyl acetoacetate, propyl acetoacetate, isobutyl acetoacetate, butyl acetoacetate, tert
- the number of aluminum chelate structures is not particularly limited as long as it is 1 to 3. Among these, 1 or 3 is preferable from the viewpoint of storage stability.
- the number of aluminum chelate structures can be controlled, for example, by appropriately adjusting the ratio of mixing the aluminum trialkoxide and a compound capable of forming a chelate with aluminum. Moreover, you may select suitably the compound which has a desired structure from a commercially available aluminum chelate compound.
- organoaluminum compounds represented by the general formula (I) from the viewpoint of reactivity during heat treatment and storage stability as a composition, specifically, an organoaluminum compound in which n is 1 to 3 may be used.
- an organoaluminum compound in which n is 1 to 3 may be used.
- at least one selected from the group consisting of aluminum ethyl acetoacetate diisopropylate, aluminum tris (ethyl acetoacetate), aluminum monoacetylacetonate bis (ethyl acetoacetate) and aluminum tris (acetylacetonate) is used. More preferably, aluminum ethyl acetoacetate diisopropylate is more preferably used.
- an aluminum chelate structure in the organoaluminum compound can be confirmed by a commonly used analysis method. For example, it can be confirmed using an infrared spectrum, a nuclear magnetic resonance spectrum, a melting point, or the like.
- the content of the organoaluminum compound contained in the composition for forming a passivation film can be appropriately selected as necessary.
- the content of the organoaluminum compound can be 1% by mass to 70% by mass in the composition for forming a passivation film, and is 3% by mass to 60% by mass. It is preferably 5% by mass to 50% by mass, more preferably 10% by mass to 30% by mass.
- the organoaluminum may be liquid or solid and is not particularly limited.
- Passivation formed by being a compound with good stability at room temperature, good stability or solubility at room temperature, and good solubility or dispersibility from the viewpoint of passivation effect and storage stability The uniformity of the film is further improved, and a desired passivation effect can be stably obtained.
- the composition for forming a passivation film contains at least one resin. By including the resin, the shape stability of the composition layer formed by applying the composition for forming a passivation film on a semiconductor substrate is further improved, and the passivation film is formed in the region where the composition layer is formed. It can be selectively formed in a desired shape.
- the type of resin is not particularly limited.
- the resin is preferably a resin whose viscosity can be adjusted within a range in which a good pattern can be formed when the composition for forming a passivation film is applied onto a semiconductor substrate.
- the resin include a polyvinyl alcohol resin; a polyacrylamide resin; a polyvinylamide resin; a polyvinylpyrrolidone resin; a polyethylene oxide resin; a polysulfonic acid resin; an acrylamide alkyl sulfonic acid resin; a cellulose; a cellulose ether, carboxymethyl cellulose, hydroxyethyl cellulose, and ethyl cellulose.
- the molecular weight of these resins is not particularly limited, and is preferably adjusted as appropriate in view of the desired viscosity of the composition.
- the weight average molecular weight of the resin is preferably 100 to 10,000,000, more preferably 1,000 to 5,000,000, from the viewpoints of storage stability and pattern formation.
- the weight average molecular weight of resin is calculated
- the content of the resin in the composition for forming a passivation film can be appropriately selected as necessary.
- the resin content is, for example, preferably from 0.1% by mass to 30% by mass in the composition for forming a passivation film. From the viewpoint of expressing thixotropy that facilitates pattern formation, the resin content is more preferably 1% by mass to 25% by mass, and more preferably 1.5% by mass to 20% by mass. More preferably, the content is 1.5% by mass to 10% by mass.
- the content ratio of the organoaluminum compound and the resin in the passivation film forming composition can be appropriately selected as necessary.
- the content ratio of the resin to the organoaluminum compound is preferably 0.001 to 1000, and preferably 0.01 to 100. More preferably, it is 0.1 to 1.
- the composition for forming a passivation film preferably contains a solvent.
- the adjustment of the viscosity becomes easier, the applicability is further improved, and a more uniform heat-treated product layer can be formed.
- the solvent is not particularly limited and can be appropriately selected as necessary. Among them, a solvent that can dissolve the organoaluminum compound and the resin to give a uniform solution is preferable, and more preferably includes at least one organic solvent.
- the solvent include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl isopropyl ketone, methyl-n-butyl ketone, methyl isobutyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, diethyl ketone, Ketone solvents such as propyl ketone, diisobutyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone; diethyl ether, methyl ethyl ether, methyl-n-propyl ether, diisopropyl ether , Tetrahydrofuran, methyltetrahydrofuran, dioxane, dimethyldioxane, ethylene glycol dimethyl ether, ethylene
- the solvent preferably contains at least one selected from the group consisting of a terpene solvent, an ester solvent and an alcohol solvent from the viewpoint of impartability to a semiconductor substrate and pattern formation, and is selected from the group consisting of a terpene solvent. More preferably, at least one kind is included.
- the content of the solvent in the composition for forming a passivation film is determined in consideration of impartability, pattern formability, and storage stability.
- the content of the solvent is preferably 5% by mass to 98% by mass in the composition for forming a passivation film, and preferably 10% by mass to 95% by mass in the composition for forming a passivation film, from the viewpoint of the impartability of the composition and the pattern forming property. It is more preferable.
- the content of the acidic compound and the basic compound is preferably 1% by mass or less in the composition for forming a passivation film, respectively, from the viewpoint of storage stability, and 0.1% by mass. % Or less is more preferable.
- Examples of the acidic compound include Bronsted acid and Lewis acid. Specific examples include inorganic acids such as hydrochloric acid and nitric acid, and organic acids such as acetic acid. Examples of basic compounds include Bronsted bases and Lewis bases. Specific examples include inorganic bases such as alkali metal hydroxides and alkaline earth metal hydroxides, and organic bases such as trialkylamine and pyridine.
- the viscosity of the composition for forming a passivation film is not particularly limited, and can be appropriately selected depending on a method for applying the composition to a semiconductor substrate.
- the pressure may be 0.01 Pa ⁇ s to 10,000 Pa ⁇ s.
- it is preferably 0.1 Pa ⁇ s to 1000 Pa ⁇ s.
- the viscosity is measured at 25 ° C. and a shear rate of 1.0 s ⁇ 1 using a rotary shear viscometer.
- the shear viscosity of the composition for forming a passivation film is not particularly limited. Among them from the viewpoints of pattern formability, thixotropic ratio calculated by dividing the shear viscosity eta 1 at shear viscosity eta 2 at a shear rate of 10s -1 at a shear rate of 1.0s -1 ( ⁇ 1 / ⁇ 2 ) is 1. It is preferably from 05 to 100, more preferably from 1.1 to 50. The shear viscosity is measured at a temperature of 25 ° C. using a rotary shear viscometer equipped with a cone plate (diameter 50 mm, cone angle 1 °).
- the method for producing the composition for forming a passivation film can be produced by mixing an organoaluminum compound, a resin and, if necessary, a solvent by a commonly used mixing method. Moreover, after dissolving resin in a solvent, you may manufacture by mixing this and an organoaluminum compound.
- the organoaluminum compound may be prepared by mixing aluminum alkoxide and a compound capable of forming a chelate with aluminum. At that time, a solvent may be appropriately used or heat treatment may be performed.
- the composition for forming a passivation film may be produced by mixing the organoaluminum compound thus prepared and a resin or a solution containing a resin.
- the components contained in the composition for forming a passivation film and the content of each component are determined by thermal analysis such as TG / DTA, spectral analysis such as NMR and IR, and chromatographic analysis such as HPLC and GPC. Can be confirmed.
- the semiconductor substrate with a passivation film of the present invention includes a semiconductor substrate and a passivation film that is a heat treatment product of the composition for forming a passivation film provided on the entire surface or a part of the semiconductor substrate.
- the semiconductor substrate with a passivation film exhibits an excellent passivation effect by having a passivation film that is a layer made of a heat-treated product of the composition for forming a passivation film.
- the semiconductor substrate may be a p-type semiconductor substrate or an n-type semiconductor substrate.
- the surface on which the passivation film is formed is a semiconductor substrate that is a p-type layer. Even if the p-type layer on the semiconductor substrate is a p-type layer derived from the p-type semiconductor substrate, the p-type layer is formed on the n-type semiconductor substrate or the p-type semiconductor substrate as a p-type diffusion layer or a p + -type diffusion layer. It may be.
- the thickness of the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose. For example, it can be 50 ⁇ m to 1000 ⁇ m, and preferably 75 ⁇ m to 750 ⁇ m.
- the thickness of the passivation film formed on the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose. For example, it is preferably 5 nm to 50 ⁇ m, preferably 10 nm to 30 ⁇ m, and more preferably 15 nm to 20 ⁇ m.
- the thickness of the passivation film is measured by a conventional method using a stylus type step / surface shape measuring device (for example, manufactured by Ambios).
- the shape of the passivation film is not particularly limited, and can be a desired shape as necessary.
- the passivation film may be formed on the entire surface of the semiconductor substrate, or may be formed only on a part of the region.
- the semiconductor substrate with a passivation film can be applied to a solar cell element, a light emitting diode element or the like.
- the solar cell element excellent in conversion efficiency can be obtained by applying to a solar cell element.
- the method for producing a semiconductor substrate with a passivation film according to the present invention comprises a step of forming the composition layer by applying the composition for forming a passivation film on the entire surface or a part of the semiconductor substrate, and heat-treating the composition layer. And forming a passivation film.
- the manufacturing method may further include other steps as necessary.
- the semiconductor substrate to which the composition for forming a passivation film is applied is not particularly limited and can be appropriately selected from those usually used according to the purpose.
- the semiconductor substrate is not particularly limited as long as silicon, germanium, or the like is doped with p-type impurities or n-type impurities. Of these, a silicon substrate is preferable.
- the semiconductor substrate may be a p-type semiconductor substrate or an n-type semiconductor substrate. Among these, from the viewpoint of the passivation effect, it is preferable that the surface on which the passivation film is formed is a semiconductor substrate that is a p-type layer.
- the p-type layer on the semiconductor substrate is a p-type layer derived from the p-type semiconductor substrate
- the p-type layer is formed on the n-type semiconductor substrate or the p-type semiconductor substrate as a p-type diffusion layer or a p + -type diffusion layer. It may be.
- the thickness of the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose. For example, it can be 50 ⁇ m to 1000 ⁇ m, and preferably 75 ⁇ m to 750 ⁇ m.
- the method for producing a semiconductor substrate with a passivation film preferably further includes a step of applying an alkaline aqueous solution to the semiconductor substrate before the step of forming the composition layer. That is, it is preferable to wash the surface of the semiconductor substrate with an alkaline aqueous solution before applying the composition for forming a passivation film on the semiconductor substrate. By washing with an alkaline aqueous solution, organic substances, particles, and the like present on the surface of the semiconductor substrate can be removed, and the passivation effect is further improved.
- RCA cleaning and the like can be exemplified.
- the organic substance and particles can be removed and washed by immersing the semiconductor substrate in a mixed solution of ammonia water and hydrogen peroxide water and treating at 60 ° C. to 80 ° C.
- the washing time is preferably 10 seconds to 10 minutes, more preferably 30 seconds to 5 minutes.
- the method for forming the composition layer by applying the composition for forming a passivation film on a semiconductor substrate there is no particular limitation on the method for forming the composition layer by applying the composition for forming a passivation film on a semiconductor substrate.
- the method of providing the said composition for passivation film formation on a semiconductor substrate using a well-known coating method etc. can be mentioned.
- Specific examples include a dipping method, a printing method such as screen printing, a spin method, a brush coating, a spray method, a doctor blade method, a roll coater method, and an ink jet method.
- various printing methods, ink jet methods, and the like are preferable.
- the amount of the composition for forming a passivation film can be appropriately selected depending on the purpose.
- the thickness of the passivation film to be formed can be appropriately adjusted so as to be a desired film thickness described later.
- a passivation film can be formed on a semiconductor substrate by heat-treating a composition layer formed of the composition for forming a passivation film to form a heat-treated material layer derived from the composition layer.
- the heat treatment conditions for the composition layer are not particularly limited as long as the organoaluminum compound contained in the composition layer can be converted into aluminum oxide (Al 2 O 3 ) which is the heat treatment product. Among these, it is preferable that the heat treatment conditions allow the formation of an amorphous Al 2 O 3 layer having no specific crystal structure.
- the passivation film is composed of an amorphous Al 2 O 3 layer, a negative charge can be effectively imparted to the passivation film, and a more excellent passivation effect can be obtained.
- This heat treatment step can be divided into a drying step and an annealing step.
- a passivation effect cannot be obtained after the drying step, but a passivation effect can be obtained after the annealing step.
- the annealing temperature is preferably 400 ° C. to 900 ° C., more preferably 450 ° C. to 800 ° C.
- the annealing time can be appropriately selected according to the annealing temperature and the like. For example, it can be 0.1 to 10 hours, and preferably 0.2 to 5 hours.
- the thickness of the passivation film manufactured by the method for manufacturing a semiconductor substrate with a passivation film is not particularly limited and can be appropriately selected according to the purpose. For example, it is preferably 5 nm to 50 ⁇ m, preferably 10 nm to 30 ⁇ m, and more preferably 15 nm to 20 ⁇ m.
- the film thickness of the formed passivation film is measured by a conventional method using a stylus type step / surface shape measuring device (for example, manufactured by Ambios).
- the method for manufacturing a semiconductor substrate with a passivation film includes a step of drying a composition layer made of the composition for forming a passivation film after applying the composition for forming a passivation film and before the step of forming the passivation film by annealing. May further be included. By including the step of drying the composition layer, a passivation film having a more uniform passivation effect can be formed.
- the step of drying the composition layer is not particularly limited as long as at least a part of the solvent that may be included in the composition for forming a passivation film can be removed.
- the drying treatment can be, for example, a heat treatment at 30 ° C. to 250 ° C. for 1 minute to 60 minutes, and is preferably a heat treatment at 40 ° C. to 220 ° C. for 3 minutes to 40 minutes.
- the drying treatment may be performed under normal pressure or under reduced pressure.
- the solar cell element of the present invention includes a semiconductor substrate in which a p-type layer and an n-type layer are pn-junction, and a heat treatment material layer of the composition for forming a passivation film provided on the entire surface or part of the semiconductor substrate.
- a passivation film and electrodes disposed on at least one layer selected from the group consisting of the p-type layer and the n-type layer of the semiconductor substrate.
- the solar cell element may further include other components as necessary.
- the said solar cell element is excellent in conversion efficiency by having the passivation film formed from the said composition for passivation film formation.
- the surface of the semiconductor substrate on which the passivation film is provided may be a p-type layer or an n-type layer.
- a p-type layer is preferable from the viewpoint of conversion efficiency. Even if the p-type layer on the semiconductor substrate is a p-type layer derived from the p-type semiconductor substrate, the p-type layer is formed on the n-type semiconductor substrate or the p-type semiconductor substrate as a p-type diffusion layer or a p + -type diffusion layer. It may be.
- the thickness of the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose. For example, it can be 50 ⁇ m to 1000 ⁇ m, and preferably 75 ⁇ m to 750 ⁇ m.
- the thickness of the passivation film formed on the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose. For example, it is preferably 5 nm to 50 ⁇ m, preferably 10 nm to 30 ⁇ m, and more preferably 15 nm to 20 ⁇ m.
- the shape of the passivation film formed on the semiconductor substrate is not particularly limited and can be appropriately selected according to the purpose.
- the passivation film can be formed, for example, in a region other than the electrode disposed on the semiconductor substrate.
- the shape and size of the solar cell element There is no limitation on the shape and size of the solar cell element.
- a square having a side of 125 mm to 156 mm is preferable.
- the method for manufacturing a solar cell element of the present invention includes at least one selected from the group consisting of the p-type layer and the n-type layer on a semiconductor substrate having a pn junction formed by joining a p-type layer and an n-type layer. Forming an electrode on the layer; forming a composition layer by applying the passivation film forming composition on one or both surfaces of the semiconductor substrate on which the electrode is formed; And heat-treating the composition layer to form a passivation film.
- the method for manufacturing the solar cell element may further include other steps as necessary.
- a solar cell element having a semiconductor substrate passivation film having an excellent passivation effect and excellent in conversion efficiency can be manufactured by a simple method. Furthermore, the semiconductor substrate passivation film can be formed on the semiconductor substrate on which the electrodes are formed so as to have a desired shape, and the productivity of the solar cell element is excellent.
- the step of forming an electrode on one or more layers selected from the group consisting of a p-type layer and an n-type layer on a semiconductor substrate having a pn junction may be appropriately selected from commonly used electrode forming methods. It can.
- an electrode can be formed by applying a paste for forming an electrode such as a silver paste or an aluminum paste to a desired region on a semiconductor substrate and performing a sintering treatment as necessary. The details of the electrode forming method are as described above.
- the number and shape of the electrodes to be formed are not particularly limited and can be appropriately selected according to the purpose.
- the passivation film is formed using the composition for forming a passivation film, a desired number and shape of electrodes and a desired shape of the passivation film can be easily formed.
- the step of forming the electrode may be performed prior to the step of forming the composition layer, or may be performed after the step of forming the composition layer or forming the passivation film. From the viewpoint of obtaining a more excellent passivation effect, the step of forming the electrode is preferably performed prior to the step of forming the composition layer.
- the surface of the semiconductor substrate on which the semiconductor substrate passivation film is provided may be a p-type layer or an n-type layer. Among these, a p-type layer is preferable from the viewpoint of conversion efficiency.
- the details of the method for forming a semiconductor substrate passivation film using the composition for forming a passivation film are the same as those described above for the method for manufacturing a semiconductor substrate with a passivation film, and the preferred embodiments are also the same.
- the thickness of the semiconductor substrate passivation film formed on the semiconductor substrate is not particularly limited and can be appropriately selected depending on the purpose. For example, it is preferably 5 nm to 50 ⁇ m, preferably 10 nm to 30 ⁇ m, and more preferably 15 nm to 20 ⁇ m.
- FIG. 1 is a cross-sectional view schematically showing an exemplary process for producing a solar cell element having a semiconductor substrate passivation film according to the present embodiment.
- this process diagram does not limit the present invention.
- an n + -type diffusion layer 2 is formed in the vicinity of the surface, and an antireflection film 3 is formed on the outermost surface.
- the antireflection film 3 include a silicon nitride film and a titanium oxide film.
- a surface protective film such as silicon oxide may further exist between the antireflection film 3 and the p-type semiconductor substrate 1.
- a material for forming the back electrode 5 such as an aluminum electrode paste is applied to a partial region of the back surface, and then subjected to a sintering process to form the back electrode 5 and a p-type semiconductor.
- a p + -type diffusion layer 4 is formed by diffusing aluminum atoms in the substrate 1.
- the electrode 7 is applied to the light receiving surface side and then sintered to form the surface electrode 7.
- those containing glass powder having a fire-through property as an electrode forming paste, reaches through the antireflective film 3, as shown in FIG. 1 (c), on the n + -type diffusion layer 2, the surface electrode 7 can be formed to obtain an ohmic contact.
- a composition for forming a passivation film is formed on the p-type layer on the back surface other than the region where the back electrode 5 is formed to form a composition layer.
- the application can be performed by a coating method such as screen printing.
- the composition layer formed on the p-type layer is heat-treated to form the semiconductor substrate passivation film 6.
- the back electrode formed from aluminum or the like can have a point contact structure, and the warpage of the substrate can be reduced. Further, by using the passivation film forming composition, a semiconductor substrate passivation film can be formed with excellent productivity only on the p-type layer other than the region where the electrode is formed.
- FIG. 1D shows a method of forming a passivation film only on the back surface portion.
- a passivation film forming composition is applied to the side surface, and this is heat-treated.
- a passivation film may be further formed on the side surface (edge) of the semiconductor substrate 1 (not shown).
- the solar cell element excellent in power generation efficiency can be manufactured.
- the semiconductor substrate passivation film may be formed by coating and heat-treating the passivation film forming composition of the present invention only on the side surface without forming the semiconductor substrate passivation film on the back surface portion.
- the composition for forming a passivation film of the present invention is particularly effective when used in a place where there are many crystal defects such as side surfaces.
- an electrode such as aluminum may be formed in a desired region by vapor deposition or the like.
- FIG. 2 is a cross-sectional view schematically showing another process example of a method for manufacturing a solar cell element having a passivation film according to the present embodiment.
- FIG. 2 shows the heat treatment of the aluminum electrode paste after forming the p + type diffusion layer using the aluminum electrode paste or the p type diffusion layer forming composition capable of forming the p + type diffusion layer by thermal diffusion treatment.
- the process drawing including the process of removing the heat-treated product of the product or the p + -type diffusion layer forming composition will be described as a cross-sectional view.
- the p-type diffusion layer forming composition include a composition containing an acceptor element-containing substance and a glass component.
- an n + -type diffusion layer 2 is formed in the vicinity of the surface of the p-type semiconductor substrate 1, and an antireflection film 3 is formed on the surface.
- the antireflection film 3 include a silicon nitride film and a titanium oxide film.
- the p + -type diffusion layer 4 is formed by applying a p + -type diffusion layer forming composition to a partial region of the back surface and then performing heat treatment.
- a heat treatment product 8 of a composition for forming a p + type diffusion layer is formed on the p + type diffusion layer 4.
- an aluminum electrode paste may be used instead of the p-type diffusion layer forming composition.
- an aluminum electrode 8 is formed on the p + type diffusion layer 4.
- the heat treatment product 8 or the aluminum electrode 8 of the p-type diffusion layer forming composition formed on the p + -type diffusion layer 4 is removed by a technique such as etching.
- the electrode forming paste is selectively applied to a part of the light receiving surface (front surface) and the back surface, and then heat-treated to form the surface electrode 7 on the light receiving surface (front surface).
- a back electrode 5 is formed on the back surface.
- the electrode forming paste for forming the back electrode 5 is not limited to the aluminum electrode paste, but may be a silver electrode paste or the like. An electrode paste capable of forming a lower resistance electrode can also be used. As a result, the power generation efficiency can be further increased.
- a composition for forming a passivation film is formed on the p-type layer on the back surface other than the region where the back electrode 5 is formed to form a composition layer.
- the application can be performed by a coating method such as screen printing.
- the passivation layer 6 is formed by heat-treating the composition layer formed on the p-type layer.
- FIG. 2E shows a method of forming a passivation film only on the back surface portion, but in addition to the back surface side of the p-type semiconductor substrate 1, a passivation film forming material is applied to the side surface and heat-treated.
- a semiconductor substrate passivation film may be further formed on the side surface (edge) of the mold semiconductor substrate 1 (not shown).
- the passivation film may be formed by applying the composition for forming a passivation film of the present invention only to the side surface without forming the passivation film on the back surface portion and heat-treating the composition.
- the composition for forming a passivation film of the present invention is particularly effective when used in a place where there are many crystal defects such as side surfaces.
- an electrode such as aluminum may be formed in a desired region by vapor deposition or the like.
- the composition for forming a passivation film can also be used to form a passivation film 6 on the light receiving surface side or the back surface side of a back electrode type solar cell element in which an electrode is disposed only on the back surface side as shown in FIG.
- a passivation film 6 and an antireflection film 3 are formed on the surface.
- the antireflection film 3 a silicon nitride film, a titanium oxide film, or the like is known.
- the passivation film 6 is formed by applying the passivation film forming composition of the present invention and heat-treating it.
- a back electrode 5 is provided on each of the p + -type diffusion layer 4 and the n + -type diffusion layer 2, and a semiconductor substrate passivation film is formed in a region where no back-side electrode is formed. 6 is provided.
- the p + -type diffusion layer 4 can be formed by applying a heat treatment after applying the p-type diffusion layer forming composition or the aluminum electrode paste to a desired region as described above.
- the n + -type diffusion layer 2 can be formed, for example, by applying a composition for forming an n-type diffusion layer capable of forming an n + -type diffusion layer by thermal diffusion treatment to a desired region and then performing a heat treatment. Examples of the composition for forming an n-type diffusion layer include a composition containing a donor element-containing material and a glass component.
- the back electrode 5 provided on each of the p + type diffusion layer 4 and the n + type diffusion layer 2 can be formed using a commonly used electrode forming paste such as a silver electrode paste.
- the back electrode 5 provided on the p + -type diffusion layer 4 may be an aluminum electrode formed with the p + -type diffusion layer 4 using aluminum electrode paste.
- the semiconductor substrate passivation film 6 provided on the back surface can be formed by applying a passivation film forming composition to a region where the back electrode 5 is not provided and heat-treating it.
- the semiconductor substrate passivation film 6 may be formed not only on the back surface of the semiconductor substrate 1 but also on the side surfaces (not shown).
- the power generation efficiency is excellent. Furthermore, since the passivation film is formed in the region where the back electrode is not formed, the conversion efficiency is further improved.
- the solar cell includes at least one of the solar cell elements, and is configured by arranging a wiring material on the electrode of the solar cell element. If necessary, the solar cell may be constituted by connecting a plurality of solar cell elements via a wiring material and further sealing with a sealing material.
- the wiring material and the sealing material are not particularly limited, and can be appropriately selected from those usually used in the industry. There is no restriction
- Example 1 (Preparation of composition for forming passivation film) An organoaluminum compound solution was prepared by mixing 2.00 g of trisec-butoxyaluminum and 2.01 g of terpineol. Separately, 5.00 g of ethyl cellulose and 95.02 g of terpineol were mixed and stirred at 150 ° C. for 1 hour to prepare an ethyl cellulose solution.
- the composition 1 for forming a passivation film 1 was prepared as a colorless and transparent solution by mixing 2.16 g of the obtained organoaluminum compound solution and 3.00 g of an ethylcellulose solution.
- the content rate in the composition 1 for forming a passivation film of ethyl cellulose was 2.9%, and the content rate of the organoaluminum compound was 21%.
- the evaluation results are shown in Table 1.
- a single crystal p-type silicon substrate manufactured by SUMCO, 50 mm square, thickness: 625 ⁇ m
- the silicon substrate was pre-treated by dipping and cleaning at 70 ° C. for 5 minutes using an RCA cleaning solution (Frontier Cleaner-A01 manufactured by Kanto Chemical). Then, it applied to the whole surface so that the film thickness after drying might be set to 5 micrometers on the silicon substrate which pre-processed the composition 1 for passivation film formation obtained above using a screen printing method, and it is 3 at 150 degreeC. Dried for a minute.
- the substrate was allowed to cool at room temperature to prepare an evaluation substrate.
- the thickness of the formed passivation film was 0.35 ⁇ m.
- the effective lifetime ( ⁇ s) of the evaluation substrate obtained above was measured at room temperature by the reflected microwave photoelectric attenuation method using a lifetime measurement apparatus (WT-2000PVN manufactured by Nippon Semi-Lab).
- the effective lifetime of the region to which the composition for forming a passivation film of the obtained evaluation substrate was applied was 111 ⁇ s.
- the shear viscosity of the composition for forming a passivation film 1 prepared as described above was measured immediately after the preparation (within 12 hours), on a rotary shear viscometer (MCR301 manufactured by Anton Paar), with a cone plate (diameter 50 mm, cone angle 1 °). It was mounted and measured at a temperature of 25 ° C. and shear rates of 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 16.0 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 5.7 Pa ⁇ s. .
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 was 2.8.
- the shear viscosity of the composition 1 for forming a passivation film prepared above was measured immediately after preparation (within 12 hours) and after storage at 25 ° C. for 30 days.
- the shear viscosity was measured by attaching a cone plate (diameter 50 mm, cone angle 1 °) to Anton Paar MCR301 at a temperature of 25 ° C. and a shear rate of 1.0 s ⁇ 1 .
- the shear viscosity ( ⁇ 0 ) immediately after preparation was 16.0 Pa ⁇ s
- Example 2 4.79 g of trisec-butoxyaluminum, 2.56 g of ethyl acetoacetate and 4.76 g of terpineol were mixed and stirred at 25 ° C. for 1 hour to obtain an organoaluminum compound solution. Separately, 12.02 g of ethyl cellulose and 88.13 g of terpineol were mixed and stirred at 150 ° C. for 1 hour to prepare an ethyl cellulose solution. Next, 2.93 g of an organoaluminum compound solution and 2.82 g of an ethylcellulose solution were mixed to prepare a colorless transparent solution, thereby preparing a semiconductor substrate passivation film forming composition 2. The content ratio of the ethyl cellulose in the passivation film forming composition 2 was 5.9%, and the content ratio of the organoaluminum compound was 21%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the composition 2 for forming a passivation film prepared above was used.
- the effective lifetime was 144 ⁇ s.
- the shear viscosity of the composition 2 for forming a passivation film prepared above was measured immediately after the preparation (within 12 hours), on a rotary shear viscometer (MCR301 manufactured by Anton Paar), with a cone plate (diameter 50 mm, cone angle 1 °). It was mounted and measured at a temperature of 25 ° C. and shear rates of 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 41.5 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 28.4 Pa ⁇ s. .
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.5 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after the preparation of the passivation film-forming composition 2 prepared above was 41.5 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 , and 43.2 Pa ⁇ s after being stored at 25 ° C. for 30 days. Met. Therefore, the viscosity change rate indicating storage stability was 4%.
- the infrared spectrum of the organoaluminum compound in the organoaluminum compound solution obtained above was measured using Excalibur FTS-3000 manufactured by Bio-Rad Laboratories. As a result, absorption characteristic of oxygen-carbon bonds coordinated to tetracoordinated aluminum is observed near 1600 cm ⁇ 1 , and absorption characteristic of carbon-carbon bonds of 6-membered ring complexes is observed near 1500 cm ⁇ 1. It was confirmed that an aluminum chelate was formed.
- Example 3 4.96 g of trisec-butoxyaluminum, 3.23 g of diethylmalonic acid, and 5.02 g of terpineol were mixed and stirred at 25 ° C. for 1 hour to obtain an organoaluminum compound solution.
- Passivation film-forming composition 3 was prepared as a colorless and transparent solution by mixing 2.05 g of the obtained organoaluminum compound solution and 2.00 g of an ethylcellulose solution prepared in the same manner as in Example 2. The content of the ethyl cellulose in the passivation film-forming composition 3 was 5.9%, and the content of the organoaluminum compound was 20%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the composition 3 for forming a passivation film prepared above was used.
- the effective lifetime was 96 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 is 90.7 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 is 37.4 Pa ⁇ s
- the shear rate The shear viscosity was 10.4 Pa ⁇ s under the condition of 100 s ⁇ 1 .
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 was 2.43.
- the shear viscosity immediately after preparation of the composition 3 for forming a passivation film prepared above was 90.7 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 , and 97.1 Pa ⁇ s after storage at 25 ° C. for 30 days. Met. Therefore, the viscosity change rate indicating storage stability was 7%.
- the infrared spectrum of the organoaluminum compound in the organoaluminum compound solution obtained above was measured using Excalibur FTS-3000 manufactured by Bio-Rad Laboratories. As a result, absorption characteristic of oxygen-carbon bonds coordinated to tetracoordinated aluminum is observed near 1600 cm ⁇ 1 , and absorption characteristic of carbon-carbon bonds of 6-membered ring complexes is observed near 1500 cm ⁇ 1. It was confirmed that an aluminum chelate was formed.
- Example 4 In Example 3, the composition 3 for forming a passivation film 3 was applied to a silicon substrate that had been pretreated in the same manner as in Example 3 except that it was applied to a silicon substrate by screen printing in a strip shape having a width of 100 ⁇ m and a spacing of 2 mm. A passivation film was formed and evaluated in the same manner. The effective lifetime in the region to which the composition 3 for forming a passivation film was applied was 90 ⁇ s. Moreover, the effective lifetime in the area
- Example 5 On a silicon substrate pretreated in the same manner as in Example 1, aluminum paste (PVG solutions, PVG-AD-02) was applied in a strip shape with a width of about 200 ⁇ m and an interval of 2 mm by screen printing, at 400 ° C. for 10 seconds.
- the aluminum electrode having a thickness of 20 ⁇ m was formed by sintering at 850 ° C. for 10 seconds and 650 ° C. for 10 seconds.
- the composition 3 for forming a passivation film prepared above was applied by screen printing only to a region where an aluminum electrode was not formed, and dried at 150 ° C. for 3 minutes. Next, after annealing at 550 ° C.
- the substrate was allowed to cool at room temperature to form a passivation film, thereby producing an evaluation substrate.
- the effective lifetime of the region where the passivation film was formed was 90 ⁇ s.
- the foreign material derived from the passivation film formation composition 3 was not observed on the surface of the aluminum electrode.
- Example 6 100.02 g of ethyl cellulose and 400.13 g of terpineol were mixed and stirred at 150 ° C. for 1 hour to prepare a 10% ethyl cellulose solution. Separately, 9.71 g of ethyl acetoacetate aluminum diisopropylate (trade name: ALCH, manufactured by Kawaken Fine Chemical Co., Ltd.) and 4.50 g of terpineol are mixed, and then 15.03 g of 10% ethylcellulose solution is mixed. Thus, a passivation film forming composition 6 was prepared as a colorless and transparent solution.
- ALCH ethyl acetoacetate aluminum diisopropylate
- the content of ethyl cellulose in the passivation film forming composition 6 was 5.1%, and the content of the organoaluminum compound was 33.2%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the composition 6 for forming a passivation film prepared above was used.
- the effective lifetime was 121 ⁇ s.
- the shear viscosity of the composition 6 for forming a passivation film prepared above was measured in the same manner as described above.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 81.0 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 47.7 Pa ⁇ s. .
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 was 1.7.
- the shear viscosity immediately after preparation of the passivation film forming composition 6 prepared above was 81.0 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 , and 80.7 Pa ⁇ s after being stored at 25 ° C. for 30 days. Met. Therefore, the rate of change in viscosity showing storage stability was 0.4%.
- Print blur Evaluation of printing bleeding was performed by patterning the prepared composition 6 for forming a passivation film on a silicon substrate using a screen printing method, and comparing the pattern shape immediately after printing with the pattern shape after heat treatment. .
- a screen mask plate having an opening pattern opposite to that of an electrode forming screen mask plate having a circular dot-like opening 14 and a non-opening 12 as shown in FIG. 4 in which the dot-like opening 14 is a non-opening.
- the dot diameter La of the dot-shaped opening 14 is 368 ⁇ m
- the dot interval Lb is 0.5 mm.
- the printing bleeding refers to a phenomenon in which a composition layer formed from a composition for forming a passivation film printed on a silicon substrate spreads in the surface direction of the silicon substrate as compared with the used plate.
- a passivation film was formed as follows.
- the composition 6 for forming a passivation film prepared above was applied to the entire surface corresponding to the non-opening portion 12 of FIG. 4 by a printing method.
- the silicon substrate provided with the passivation film forming composition 6 was heated at 150 ° C. for 3 minutes and evaporated to evaporate the solvent, thereby forming a composition layer.
- the silicon substrate on which the composition layer was formed was annealed at a temperature of 700 ° C. for 10 minutes, and then allowed to cool at room temperature to form a passivation film.
- the thickness of the formed passivation film was 0.55 ⁇ m.
- Evaluation of printing bleeding is based on the diameter of the opening in the passivation film formed on the substrate after the heat treatment, that is, the opening corresponding to the opening 14 in FIG. 4 and the area where the passivation film is not formed. was measured. In addition, the measurement measured the diameter of the opening part 10 points, and computed the diameter of the opening part after heat processing as the average value. With respect to the dot diameter (La) immediately after printing (368 ⁇ m), the rate of decrease in the diameter of the opening after the heat treatment is evaluated as less than 10% A, evaluated as 10% or more and less than 30%, evaluated as B, 30% or more. The printing blur was evaluated as C. If evaluation is A or B, it is favorable as a composition for forming a passivation film. The print bleeding evaluation of the composition 6 for forming a passivation film obtained above was A.
- Example 7 10.12 g of ethyl acetoacetate aluminum diisopropylate and 25.52 g of terpineol were mixed, and then 34.70 g of the 10% ethyl cellulose solution prepared in Example 6 was mixed to form a colorless transparent solution to form a passivation film.
- Composition 7 was prepared. The content rate in the composition 7 for forming a passivation film of ethyl cellulose was 4.9%, and the content rate of the organoaluminum compound was 14.4%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the composition 7 for forming a passivation film prepared above was used.
- the effective lifetime was 95 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 43.4 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 27.3 Pa ⁇ s.
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.6 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after the preparation of the passivation film-forming composition 7 was 43.4 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 at 43.4 Pa ⁇ s, and 44.5 Pa ⁇ s after being stored at 25 ° C. for 30 days. Accordingly, the viscosity change rate indicating storage stability was 3%.
- a film-forming composition 8 was prepared. The content of ethyl cellulose in the composition 8 for forming a semiconductor substrate passivation film was 4.6%, and the content of the organoaluminum compound was 25.7%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the semiconductor substrate passivation film forming composition 8 prepared above was used.
- the effective lifetime was 110 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 38.5 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 28.1 Pa ⁇ s.
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.6 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after preparation of the passivation film-forming composition 8 was 38.5 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 , and 39.7 Pa ⁇ s after storage at 25 ° C. for 30 days. Accordingly, the viscosity change rate indicating storage stability was 3%.
- Example 9 20.18 g of ethyl cellulose and 480.22 g of terpineol were mixed and stirred at 150 ° C. for 1 hour to prepare a 4% ethyl cellulose solution. 5.09 g of ethyl acetoacetate aluminum diisopropylate, 5.32 g of 4% ethylcellulose solution, aluminum hydroxide particles (HP-360, Showa Denko, particle size (D50%) is 3.2 ⁇ m, purity is 99.
- the composition 9 for forming a semiconductor substrate passivation film 9 was prepared as a white suspension by mixing 11.34 g of 0%). The content of ethyl cellulose in composition 9 for forming a semiconductor substrate passivation film was 1.0%, and the content of the organoaluminum compound was 23.4%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the semiconductor substrate passivation film forming composition 9 prepared above was used.
- the effective lifetime was 84 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 33.5 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 25.6 Pa ⁇ s.
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.3 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after the preparation of the passivation film-forming composition 9 was 33.5 Pa ⁇ s at a temperature of 25 ° C. and a shear rate of 1.0 s ⁇ 1 , and 36.3 Pa ⁇ s after storage at 25 ° C. for 30 days. Therefore, the rate of change in viscosity indicating storage stability was 8%.
- Example 10 5.18 g of ethyl acetoacetate aluminum diisopropylate and 5.03 g of 4% ethylcellulose solution, silicon oxide particles (Aerosil 200, manufactured by Nippon Aerosil Co., Ltd., average particle size 12 nm, surface modified with hydroxy groups) 2.90 g of terpineol and 6.89 g of terpineol were mixed to prepare a semiconductor substrate passivation film forming composition 10 as a white suspension.
- the content of ethyl cellulose in the composition 9 for forming a semiconductor substrate passivation film was 1.0%, and the content of the organoaluminum compound was 25.9%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the semiconductor substrate passivation film forming composition 10 prepared above was used.
- the effective lifetime was 97 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 48.3 Pa ⁇ s, and the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 32.9 Pa ⁇ s. .
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.5 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after preparation of the passivation film-forming composition 9 was 48.3 Pa ⁇ s at a temperature of 25 ° C., a shear rate of 1.0 s ⁇ 1 , and 50.1 Pa ⁇ s after storage at 25 ° C. for 30 days. Therefore, the viscosity change rate indicating storage stability was 4%.
- Example 11 Mixing 4.42 g of aluminum tris (ethyl acetoacetate) (manufactured by Kawaken Fine Chemical Co., Ltd., trade name: ALCH-TR), 10.12 g of the 10% ethylcellulose solution prepared in Example 6, and 10.53 g of terpineol. Then, a semiconductor substrate passivation film forming composition 11 was prepared as a white suspension. The content of ethyl cellulose in the composition for forming a semiconductor substrate passivation film 11 was 4.0%, and the content of the organoaluminum compound was 17.6%.
- aluminum tris ethyl acetoacetate
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the semiconductor substrate passivation film forming composition 11 prepared above was used.
- the effective lifetime was 88 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 32.2 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 22.1 Pa ⁇ s.
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) was 1.5 when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 .
- the shear viscosity immediately after preparation of the composition 11 for forming a passivation film 11 was 32.2 Pa ⁇ s at a temperature of 25 ° C. and a shear rate of 1.0 s ⁇ 1 and 33.4 Pa ⁇ s after being stored at 25 ° C. for 30 days. Therefore, the viscosity change rate indicating storage stability was 4%.
- Example 12 ⁇ Example 12> 6.56 g of aluminum monoacetylacetonate bis (ethylacetoacetate) (manufactured by Kawaken Fine Chemical Co., Ltd., trade name: aluminum chelate D, 76% isopropyl alcohol solution), and 10% ethylcellulose solution prepared in Example 6 were 9.
- the semiconductor substrate passivation film forming composition 12 was prepared as a white suspension by mixing 89 g and 9.78 g of terpineol.
- the content of ethyl cellulose in the semiconductor substrate passivation film forming composition 12 was 3.8%, and the content of the organoaluminum compound was 25.0%.
- a passivation film was formed on a pretreated silicon substrate and evaluated in the same manner as in Example 1 except that the semiconductor substrate passivation film forming composition 12 prepared above was used.
- the effective lifetime was 102 ⁇ s.
- the shear viscosity ( ⁇ 1 ) at a shear rate of 1.0 s ⁇ 1 was 37.3 Pa ⁇ s
- the shear viscosity ( ⁇ 2 ) at a shear rate of 10 s ⁇ 1 was 26.3 Pa ⁇ s.
- the thixo ratio ( ⁇ 1 / ⁇ 2 ) when the shear viscosity was 1.0 s ⁇ 1 and 10 s ⁇ 1 was 1.4.
- Example 1 a substrate for evaluation was prepared and the effective lifetime was measured and evaluated in the same manner as in Example 1 except that the composition 1 for forming a semiconductor substrate passivation film was not applied.
- the effective lifetime was 20 ⁇ s.
- a passivation film was formed on a silicon substrate pretreated in the same manner as in Example 1 except that the composition C2 prepared above was used, and evaluated in the same manner. The effective lifetime was 21 ⁇ s.
- a colorless and transparent composition C3 was prepared by mixing 2.01 g of tetraethoxysilane, 1.99 g of terpineol and 4.04 g of an ethylcellulose solution prepared in the same manner as in Example 2.
- a passivation film was formed on a silicon substrate in the same manner as in Example 1 except that the composition C3 prepared above was used, and evaluated in the same manner.
- the effective lifetime was 23 ⁇ s.
- a passivation film was formed on a silicon substrate on which an aluminum electrode was formed in the same manner as in Example 5 except that the composition C4 prepared above was used, and evaluated in the same manner.
- the effective lifetime of the region where the passivation film was formed was 110 ⁇ s.
- the foreign material derived from the semiconductor substrate passivation film formation composition C4 was observed on the surface of the aluminum electrode.
- the shear viscosity immediately after the preparation of the passivation film-forming composition C4 prepared above was 67.5 Pa ⁇ s at a temperature of 25 ° C. and a shear rate of 1.0 s ⁇ 1 and 36000 Pa ⁇ s after being stored at 25 ° C. for 30 days. It was. Therefore, the viscosity change rate was 532%.
- a passivation film having an excellent passivation effect can be formed by using the composition for forming a passivation film of the present invention. Moreover, it turns out that the composition for forming a passivation film of the present invention is excellent in storage stability. Furthermore, it turns out that a passivation film can be formed in a desired shape by a simple process by using the composition for forming a passivation film of the present invention.
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Abstract
Description
まず、光閉じ込め効果を促して高効率化を図るよう、受光面側にテクスチャー構造を形成したp型シリコン基板を準備し、続いてオキシ塩化リン(POCl3)、窒素、酸素の混合ガス雰囲気において800℃~900℃で数十分の処理を行って一様にn型拡散層を形成する。この従来の方法では、混合ガスを用いてリンの拡散を行うため、受光面である表面のみならず、側面、裏面にもn型拡散層が形成される。そのため、側面のn型拡散層を除去するためのサイドエッチングを行う。また、裏面のn型拡散層はp+型拡散層へ変換する必要があり、裏面全体にアルミニウムペーストを塗布し、これを焼結してアルミニウム電極を形成することで、n型拡散層をp+型拡散層にするのと同時に、オーミックコンタクトを得ている。
このような受光面とは反対側(以下、「裏面側」ともいう)にポイントコンタクト構造を有する太陽電池の場合、アルミニウム電極以外の部分の表面において、少数キャリアの再結合速度を抑制する必要がある。そのための裏面側用の半導体基板パッシベーション膜(以下、単に「パッシベーション膜」ともいう)として、SiO2膜などが提案されている(例えば、特開2004-6565号公報参照)。このような酸化膜を形成することによるパッシベーション効果としては、シリコン基板の裏面表層部シリコン原子の未結合手を終端させ、再結合の原因となる表面準位密度を低減させる効果がある。
このようなパッシベーション膜は、一般的にはALD(Atomic Layer Deposition)法やCVD(Chemical Vapor Depositon)法等の方法で形成される(例えば、Journal of Applied Physics、104(2008)、113703参照)。また半導体基板上に酸化アルミニウム膜を形成する簡便な手法として、ゾルゲル法による手法が提案されている(例えば、Thin Solid Films、517(2009)、6327-6330;Chinese Physics Letters、26(2009)、088102参照)。
<1> 下記一般式(I)で表される有機アルミニウム化合物と、樹脂と、を含むパッシベーション膜形成用組成物である。
本発明のパッシベーション膜形成用組成物は、下記一般式(I)で表される有機アルミニウム化合物の少なくとも1種と、樹脂の少なくとも1種とを含む。前記パッシベーション膜形成用組成物は必要に応じてその他の成分を更に含んでいてもよい。
1/τ=1/τb+1/τs (A)
なお、実効ライフタイムが長いほど少数キャリアの再結合速度が遅いことを示す。また実効ライフタイムが長い半導体基板を用いて太陽電池素子を構成することで、変換効率が向上する。
粘度変化率(%)=|η30-η0|/η0×100 (式)
前記パッシベーション膜形成用組成物は前記一般式(I)で表される有機アルミニウム化合物の少なくとも1種を含む。前記有機アルミニウム化合物は、アルミニウムアルコキシド、アルミニウムキレート等と呼ばれる化合物であり、アルミニウムアルコキシド構造に加えてアルミニウムキレート構造を有していることが好ましい。また、Nippon Seramikkusu Kyokai Gakujitsu Ronbunshi、97(1989)369-399にも記載されているように、前記有機アルミニウム化合物は熱処理により酸化アルミニウム(Al2O3)となる。
特定構造の有機アルミニウム化合物を含有するパッシベーション膜形成用組成物を熱処理することにより形成される酸化アルミニウムはアモルファス状態となりやすく、アルミニウム原子の欠陥等が生じて半導体基板との界面付近に大きな負の固定電荷をもつことができると考えられる。この大きな負の固定電荷が半導体基板の界面近辺で電界を発生することで少数キャリアの濃度を低下させることができ、結果的に界面でのキャリア再結合速度が抑制されるため、優れたパッシベーション効果を有するパッシベーション膜を形成することができると考えられる。
前記パッシベーション膜形成用組成物は、樹脂の少なくとも1種を含む。樹脂を含むことで、前記パッシベーション膜形成用組成物が半導体基板上に付与されて形成される組成物層の形状安定性がより向上し、パッシベーション膜を前記組成物層が形成された領域に、所望の形状で選択的に形成することができる。
前記樹脂のパッシベーション膜形成用組成物中の含有率は、必要に応じて適宜選択することができる。樹脂の含有率は、例えばパッシベーション膜形成用組成物中に0.1質量%~30質量%であることが好ましい。パターン形成をより容易にするようなチキソ性を発現させる観点から、樹脂の含有率は、1質量%~25質量%であることがより好ましく、1.5質量%~20質量%であることがより好ましく、1.5質量%~10質量%であることがさらに好ましい。
前記パッシベーション膜形成用組成物は溶媒を含むことが好ましい。パッシベーション膜形成用組成物が溶媒を含有することで、粘度の調整がより容易になり、付与性がより向上すると共により均一な熱処理物層を形成することができる。前記溶媒としては特に制限されず、必要に応じて適宜選択することができる。中でも前記有機アルミニウム化合物、及び前記樹脂を溶解して均一な溶液を与えることができる溶媒が好ましく、有機溶剤の少なくとも1種を含むことがより好ましい。
本発明のパッシベーション膜付き半導体基板は、半導体基板と、前記半導体基板上の全面又は一部に設けられた前記パッシベーション膜形成用組成物の熱処理物であるパッシベーション膜とを有する。前記パッシベーション膜付き半導体基板は、前記パッシベーション膜形成用組成物の熱処理物からなる層であるパッシベーション膜を有することで優れたパッシベーション効果を示す。
また前記半導体基板の厚みは特に制限されず、目的に応じて適宜選択することができる。例えば50μm~1000μmとすることができ、75μm~750μmであることが好ましい。
なお、パッシベーション膜の膜厚は、触針式段差・表面形状測定装置(例えば、Ambios社製)を用いて常法により測定される。
本発明のパッシベーション膜付き半導体基板の製造方法は、半導体基板上の全面又は一部に、前記パッシベーション膜形成用組成物を付与して組成物層を形成する工程と、前記組成物層を熱処理してパッシベーション膜を形成する工程とを有する。前記製造方法は必要に応じてその他の工程を更に含んでいてもよい。
前記パッシベーション膜形成用組成物を用いることで、優れたパッシベーション効果を有するパッシベーション膜を所望の形状に、簡便な方法で形成することができる。
また前記半導体基板の厚みは特に制限されず、目的に応じて適宜選択することができる。例えば50μm~1000μmとすることができ、75μm~750μmであることが好ましい。
すなわち、半導体基板上に前記パッシベーション膜形成用組成物を付与する前に、半導体基板の表面をアルカリ水溶液で洗浄することが好ましい。
アルカリ水溶液で洗浄することで、半導体基板表面に存在する有機物、パーティクル等を除去することができ、パッシベーション効果がより向上する。
アルカリ水溶液による洗浄の方法としては、一般的に知られているRCA洗浄などを例示することができる。例えばアンモニア水-過酸化水素水の混合溶液に半導体基板を浸し、60℃~80℃で処理することで、有機物及びパーティクルを除去、洗浄することできる。
洗浄時間は、10秒~10分間であることが好ましく、30秒~5分間であることがさらに好ましい。
組成物層の熱処理条件は、組成物層に含まれる有機アルミニウム化合物をその熱処理物である酸化アルミニウム(Al2O3)に変換可能であれば特に制限されない。中でも特定の結晶構造を持たないアモルファス状のAl2O3層を形成可能な熱処理条件であることが好ましい。パッシベーション膜がアモルファス状のAl2O3層で構成されることで、パッシベーション膜により効果的に負電荷を持たせることができ、より優れたパッシベーション効果を得ることができる。この熱処理工程は、乾燥工程とアニーリング工程とに分けることもできる。乾燥工程後ではパッシベーション効果は得られないが、アニーリング工程後にパッシベーション効果を得ることができる。具体的に、アニーリング温度は400℃~900℃が好ましく、450℃~800℃がより好ましい。またアニーリング時間はアニーリング温度等に応じて適宜選択できる。例えば、0.1時間~10時間とすることができ、0.2時間~5時間であることが好ましい。
なお、形成されたパッシベーション膜の膜厚は、触針式段差・表面形状測定装置(例えば、Ambios社製)を用いて常法により測定される。
本発明の太陽電池素子は、p型層及びn型層がpn接合されてなる半導体基板と、前記半導体基板上の全面又は一部に設けられた前記パッシベーション膜形成用組成物の熱処理物層であるパッシベーション膜と、前記半導体基板の前記p型層及び前記n型層からなる群より選択される1以上の層上にそれぞれ配置された電極とを有する。前記太陽電池素子は、必要に応じてその他の構成要素を更に有していてもよい。
前記太陽電池素子は、前記パッシベーション膜形成用組成物から形成されたパッシベーション膜を有することで、変換効率に優れる。
本発明の太陽電池素子の製造方法は、p型層及びn型層が接合されてなるpn接合を有する半導体基板上の前記p型層及び前記n型層からなる群より選択される1以上の層上に電極を形成する工程と、前記半導体基板の前記電極が形成される面の一方又は両方の面上に、前記パッシベーション膜形成用組成物を付与して組成物層を形成する工程と、前記組成物層を熱処理して、パッシベーション膜を形成する工程とを有する。前記太陽電池素子の製造方法は、必要に応じてその他の工程を更に有していてもよい。
前記パッシベーション膜形成用組成物を用いて半導体基板パッシベーション膜を形成する方法の詳細は、既述のパッシベーション膜付き半導体基板の製造方法と同様であり、好ましい態様も同様である。
前記半導体基板上に形成される半導体基板パッシベーション膜の厚みは特に制限されず、目的に応じて適宜選択することができる。例えば、5nm~50μmであることが好ましく、10nm~30μmであることが好ましく、15nm~20μmであることが更に好ましい。
図1は、本実施形態にかかる半導体基板パッシベーション膜を有する太陽電池素子の製造方法の一例を模式的に示す工程図を断面図として示したものである。但し、この工程図は本発明をなんら制限するものではない。
さらにまた、裏面部分に半導体基板パッシベーション膜を形成せず、側面のみに本発明のパッシベーション膜形成用組成物を塗布、熱処理して半導体基板パッシベーション膜を形成してもよい。本発明のパッシベーション膜形成用組成物は、側面のような結晶欠陥が多い場所に使用すると、その効果が特に大きい。
ここでp型拡散層形成用組成物に代えて、アルミニウム電極ペーストを用いてもよい。アルミニウム電極ペーストを用いた場合には、p+型拡散層4上にはアルミニウム電極8が形成される。
また裏面電極が形成される領域にはすでにp+型拡散層4が形成されているため、裏面電極5を形成する電極形成用ペーストには、アルミニウム電極ペーストに限定されず、銀電極ペースト等のより低抵抗な電極を形成可能な電極用ペーストを用いることもできる。これにより、さらに発電効率を高めることも可能になる。
さらにまた、裏面部分にパッシベーション膜を形成せず、側面のみに本発明のパッシベーション膜形成用組成物を付与し、これを熱処理してパッシベーション膜を形成してもよい。本発明のパッシベーション膜形成用組成物は、側面のような結晶欠陥が多い場所に使用すると、その効果が特に大きい。
図3に概略断面図を示すように、p型半導体基板1の受光面側には、表面近傍にn+型拡散層2が形成され、その表面にパッシベーション膜6及び反射防止膜3が形成されている。反射防止膜3としては、窒化ケイ素膜、酸化チタン膜などが知られている。またパッシベーション膜6は、本発明のパッシベーション膜形成用組成物を付与し、これを熱処理して形成される。
p+型拡散層4は、上述のようにp型拡散層形成用組成物又はアルミニウム電極ペーストを所望の領域に塗布した後に熱処理することで形成することができる。またn+型拡散層2は、例えば熱拡散処理によりn+型拡散層を形成可能なn型拡散層形成用組成物を所望の領域に塗布した後に熱処理することで形成することができる。
ここでn型拡散層形成用組成物としては例えば、ドナー元素含有物質とガラス成分とを含む組成物を挙げることができる。
また、p+型拡散層4上に設けられる裏面電極5は、アルミニウム電極ペーストを用いてp+型拡散層4と共に形成されるアルミニウム電極であってもよい。
裏面に設けられる半導体基板パッシベーション膜6は、パッシベーション膜形成用組成物を裏面電極5が設けられていない領域に付与し、これを熱処理することで形成することができる。
また半導体基板パッシベーション膜6は半導体基板1の裏面のみならず、さらに側面にも形成してよい(図示せず)。
太陽電池は、前記太陽電池素子の少なくとも1つを含み、太陽電池素子の電極上に配線材料が配置されて構成される。太陽電池はさらに必要に応じて、配線材料を介して複数の太陽電池素子が連結され、さらに封止材で封止されて構成されていてもよい。
前記配線材料及び封止材としては特に制限されず、当業界で通常用いられているものから適宜選択することができる。
前記太陽電池の大きさに制限はない。0.5m2~3m2であることが好ましい。
(パッシベーション膜形成用組成物の調製)
トリsec-ブトキシアルミニウムを2.00g、テルピネオールを2.01g混合し有機アルミニウム化合物溶液を調製した。これとは別にエチルセルロースを5.00g、テルピネオールを95.02g、混合し、150℃で1時間攪拌してエチルセルロース溶液を調製した。得られた有機アルミニウム化合物溶液を2.16gと、エチルセルロース溶液を3.00g混合して無色透明の溶液として、パッシベーション膜形成用組成物1を調製した。エチルセルロースのパッシベーション膜形成用組成物1中の含有率は2.9%、有機アルミニウム化合物の含有率は21%となった。
得られたパッシベーション膜形成用組成物1について、以下のような評価を行った。評価結果を表1に示す。
半導体基板として、表面がミラー形状の単結晶型p型シリコン基板(SUMCO製、50mm角、厚さ:625μm)を用いた。シリコン基板をRCA洗浄液(関東化学製Frontier Cleaner-A01)を用いて70℃にて5分間、浸漬洗浄し、前処理を行った。
その後、上記で得られたパッシベーション膜形成用組成物1を前処理したシリコン基板上に、スクリーン印刷法を用いて、乾燥後の膜厚が5μmとなるように全面に付与し、150℃で3分間乾燥処理した。次いで550℃で1時間アニーリングした後、室温で放冷して評価用基板を作製した。形成されたパッシベーション膜の膜厚は0.35μmであった。
上記で得られた評価用基板の実効ライフタイム(μs)を、ライフタイム測定装置(日本セミラボ製WT-2000PVN)を用いて、室温で反射マイクロ波光電導減衰法により測定した。得られた評価用基板のパッシベーション膜形成用組成物を付与した領域の実効ライフタイムは、111μsであった。
上記で調製したパッシベーション膜形成用組成物1のせん断粘度を、調製直後(12時間以内)に、回転式せん断粘度計(AntonPaar社製MCR301)に、コーンプレート(直径50mm、コーン角1°)を装着し、温度25℃で、せん断速度1.0s-1及び10s-1の条件でそれぞれ測定した。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は16.0Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は5.7Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は2.8となった。
上記で調製したパッシベーション膜形成用組成物1のせん断粘度を、調製直後(12時間以内)及び25℃で30日間保存後にそれぞれ測定した。せん断粘度の測定はAntonPaar社MCR301に、コーンプレート(直径50mm、コーン角1°)を装着し、温度25℃、せん断速度1.0s-1で行なった。
25℃において、調製直後のせん断粘度(η0)は16.0Pa・s、25℃で30日間保存した後のせん断粘度(η30)は17.3Pa・sであった。従って、下式で算出される粘度変化率(%)は、8%であった。
粘度変化率(%)=|η30-η0|/η0×100 (式)
トリsec-ブトキシアルミニウムを4.79g、アセト酢酸エチルを2.56g、テルピネオールを4.76g混合し、25℃で1時間攪拌して有機アルミニウム化合物溶液を得た。これとは別にエチルセルロースを12.02g、テルピネオールを88.13g、混合し、150℃で1時間攪拌してエチルセルロース溶液を調製した。次に有機アルミニウム化合物溶液を2.93g、エチルセルロース溶液を2.82g混合して無色透明の溶液として、半導体基板パッシベーション膜形成用組成物2を調製した。エチルセルロースのパッシベーション膜形成用組成物2中の含有率は5.9%、有機アルミニウム化合物の含有率は21%となった。
上記で調製したパッシベーション膜形成用組成物2のせん断粘度を、調製直後(12時間以内)に、回転式せん断粘度計(AntonPaar社製MCR301)に、コーンプレート(直径50mm、コーン角1°)を装着し、温度25℃で、せん断速度1.0s-1及び10s-1の条件でそれぞれ測定した。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は41.5Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は28.4Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.5となった。
上記で調製したパッシベーション膜形成用組成物2の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で41.5Pa・s、25℃で30日間保存した後は43.2Pa・sであった。従って、保存安定性を示す粘度変化率は4%であった。
その結果、4配位アルミニウムに配位した酸素-炭素結合に特徴的な吸収が1600cm-1付近に、6員環錯体の炭素-炭素結合に特徴的な吸収が1500cm-1付近にそれぞれ観察され、アルミニウムキレートが形成されていることが確認された。
トリsec-ブトキシアルミニウムを4.96g、ジエチルマロン酸を3.23g、テルピネオールを5.02g、混合し、25℃で1時間攪拌して有機アルミニウム化合物溶液を得た。得られた有機アルミニウム化合物溶液を2.05g、実施例2と同様にして調製したエチルセルロース溶液を2.00g混合して無色透明の溶液として、パッシベーション膜形成用組成物3を調製した。エチルセルロースのパッシベーション膜形成用組成物3中の含有率は5.9%、有機アルミニウム化合物の含有率は20%となった。
上記で調製したパッシベーション膜形成用組成物3のせん断粘度を調製直後(12時間以内)に、回転式せん断粘度計(AntonPaar社製MCR301)に、コーンプレート(直径50mm、コーン角1°)を装着し、温度25℃で測定した。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は90.7Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は37.4Pa・s、せん断速度が100s-1の条件でせん断粘度は10.4Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は2.43となった。
上記で調製したパッシベーション膜形成用組成物3の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で90.7Pa・s、25℃で30日間保存した後は97.1Pa・sであった。従って、保存安定性を示す粘度変化率は7%であった。
その結果、4配位アルミニウムに配位した酸素-炭素結合に特徴的な吸収が1600cm-1付近に、6員環錯体の炭素-炭素結合に特徴的な吸収が1500cm-1付近にそれぞれ観察され、アルミニウムキレートが形成されていることが確認された。
実施例3において、パッシベーション膜形成用組成物3をシリコン基板上にスクリーン印刷で100μm幅、間隔2mmの短冊状に付与したこと以外は、実施例3と同様にして、前処理したシリコン基板上にパッシベーション膜を形成し、同様にして評価した。
パッシベーション膜形成用組成物3が付与された領域における実効ライフタイムは、90μsであった。また半導体基板パッシベーション膜形成用組成物3が付与されていない領域における実効ライフタイムは、25μsであった。
実施例1と同様にして前処理したシリコン基板上に、スクリーン印刷でアルミニウムペースト(PVG solutions社製、PVG-AD-02)を幅約200μm、間隔2mmで短冊状に付与し、400℃10秒間、850℃10秒間、650℃10秒間で焼結して厚み20μmのアルミニウム電極を形成した。
次に、上記で調製したパッシベーション膜形成用組成物3をスクリーン印刷で、アルミニウム電極が形成されていない領域にのみ付与し、150℃で3分間乾燥処理した。次いで550℃で1時間アニーリングした後、室温で放冷してパッシベーション膜を形成し評価用基板を作製した。
パッシベーション膜を形成した領域の実効ライフタイムは90μsであった。またアルミニウム電極の表面には、パッシベーション膜形成用組成物3に由来する異物は観察されなかった。
エチルセルロースを100.02gとテルピネオールを400.13g混合し、150℃で1時間攪拌して10%エチルセルロース溶液を調製した。これとは別に、エチルアセトアセテートアルミニウムジイソプロピレート(川研ファインケミカル社製、商品名:ALCH)を9.71gと、テルピネオールを4.50g、混合し、次に10%エチルセルロース溶液を15.03g混合して無色透明の溶液として、パッシベーション膜形成用組成物6を調製した。エチルセルロースのパッシベーション膜形成用組成物6中の含有率は5.1%、有機アルミニウム化合物の含有率は33.2%となった。
上記で調製したパッシベーション膜形成用組成物6を用いたこと以外は、実施例1と同様にして、前処理したシリコン基板上にパッシベーション膜を形成し、同様にして評価した。実効ライフタイムは、121μsであった。
上記で調製したパッシベーション膜形成用組成物6のせん断粘度を、上記と同様にして測定した。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は81.0Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は47.7Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.7となった。
上記で調製したパッシベーション膜形成用組成物6の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で81.0Pa・s、25℃で30日間保存した後は80.7Pa・sであった。従って、保存安定性を示す粘度変化率は0.4%であった。
印刷滲みの評価は、調製したパッシベーション膜形成用組成物6を、シリコン基板上にスクリーン印刷法を用いてパターン形成し、印刷直後のパターン形状と熱処理後のパターン形状とを比較することで行った。スクリーン印刷法には、図4に示すような円形であるドット状の開口部14と非開口部12を有する電極形成用のスクリーンマスク版とは、逆の開口部パターンを有するスクリーンマスク版(図4のドット状の開口部14が非開口部となる版)を用いた。図4に示すスクリーンマスク版では、ドット状の開口部14のドット径Laが368μm、ドット間隔Lbが0.5mmである。なお、前記印刷滲みとは、シリコン基板上に印刷したパッシベーション膜形成用組成物から形成された組成物層が、用いた版に比べて、シリコン基板の面方向に広がる現象をいう。
上記で得られたパッシベーション膜形成用組成物6の印刷滲み評価はAであった。
エチルアセトアセテートアルミニウムジイソプロピレートを10.12gと、テルピネオールを25.52g混合し、次に実施例6で作製した10%エチルセルロース溶液を34.70g、混合して無色透明の溶液として、パッシベーション膜形成用組成物7を調製した。エチルセルロースのパッシベーション膜形成用組成物7中の含有率は4.9%、有機アルミニウム化合物の含有率は14.4%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は43.4Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は27.3Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.6となった。
パッシベーション膜形成用組成物7の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で43.4Pa・s、25℃で30日間保存した後は44.5Pa・sであった。従って、保存安定性を示す粘度変化率は3%であった。
半導体基板パッシベーション膜形成用組成物7の印刷滲み評価はAであった。
エチルアセトアセテートアルミニウムジイソプロピレートを5.53gと、テルピネオールを6.07g混合し、次に実施例6で作製した10%エチルセルロース溶液を9.93g、混合して無色透明の溶液として、半導体基板パッシベーション膜形成用組成物8を調製した。エチルセルロースの半導体基板パッシベーション膜形成用組成物8中の含有率は4.6%、有機アルミニウム化合物の含有率は25.7%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は38.5Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は28.1Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.6となった。
パッシベーション膜形成用組成物8の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で38.5Pa・s、25℃で30日間保存した後は39.7Pa・sであった。従って、保存安定性を示す粘度変化率は3%であった。
パッシベーション膜形成用組成物8の印刷滲み評価はAであった。
エチルセルロースを20.18gとテルピネオールを480.22g混合し、150℃で1時間攪拌して4%エチルセルロース溶液を調製した。エチルアセトアセテートアルミニウムジイソプロピレートを5.09gと、4%エチルセルロース溶液を5.32gと、水酸化アルミニウム粒子(HP-360、昭和電工製、粒子径(D50%)は3.2μm、純度99.0%)を11.34g、混合して白色の懸濁液として、半導体基板パッシベーション膜形成用組成物9を調製した。エチルセルロースの半導体基板パッシベーション膜形成用組成物9中の含有率は1.0%、有機アルミニウム化合物の含有率は23.4%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は33.5Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は25.6Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.3となった。
パッシベーション膜形成用組成物9の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で33.5Pa・s、25℃で30日間保存した後は36.3Pa・sであった。従って、保存安定性を示す粘度変化率は8%であった。
パッシベーション膜形成用組成物9の印刷滲み評価はAであった。
エチルアセトアセテートアルミニウムジイソプロピレートを5.18gと、4%エチルセルロース溶液を5.03gと、酸化ケイ素粒子(アエロジル200、日本アエロジル社製、平均粒子径12nm、表面がヒドロキシ基で修飾されている)を2.90gと、テルピネオールを6.89g、混合して白色の懸濁液として、半導体基板パッシベーション膜形成用組成物10を調製した。エチルセルロースの半導体基板パッシベーション膜形成用組成物9中の含有率は1.0%、有機アルミニウム化合物の含有率は25.9%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は48.3Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は32.9Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.5となった。
パッシベーション膜形成用組成物9の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で48.3Pa・s、25℃で30日間保存した後は50.1Pa・sであった。従って、保存安定性を示す粘度変化率は4%であった。
パッシベーション膜形成用組成物10の印刷滲み評価はAであった。
アルミニウムトリス(エチルアセトアセテート)(川研ファインケミカル社製、商品名:ALCH-TR)を4.42gと、実施例6で調製した10%エチルセルロース溶液を10.12gと、テルピネオールを10.53g、混合して白色の懸濁液として、半導体基板パッシベーション膜形成用組成物11を調製した。エチルセルロースの半導体基板パッシベーション膜形成用組成物11中の含有率は4.0%、有機アルミニウム化合物の含有率は17.6%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は32.2Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は22.1Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.5となった。
パッシベーション膜形成用組成物11の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で32.2Pa・s、25℃で30日間保存した後は33.4Pa・sであった。従って、保存安定性を示す粘度変化率は4%であった。
パッシベーション膜形成用組成物11の印刷滲み評価はAであった。
アルミニウムモノアセチルアセトネートビス(エチルアセトアセテート)(川研ファインケミカル社製、商品名:アルミキレートD、76%イソプロピルアルコール溶液)を6.56gと、実施例6で調製した10%エチルセルロース溶液を9.89gと、テルピネオールを9.78g、混合して白色の懸濁液として、半導体基板パッシベーション膜形成用組成物12を調製した。エチルセルロースの半導体基板パッシベーション膜形成用組成物12中の含有率は3.8%、有機アルミニウム化合物の含有率は25.0%となった。
せん断速度が1.0s-1の条件でのせん断粘度(η1)は37.3Pa・s、せん断速度が10s-1の条件でのせん断粘度(η2)は26.3Pa・sとなった。せん断粘度が1.0s-1と10s-1の場合でのチキソ比(η1/η2)は1.4となった。
パッシベーション膜形成用組成物11の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で37.3Pa・s、25℃で30日間保存した後は39.5Pa・sであった。従って粘度変化率は6%であった。
(印刷滲み)
パッシベーション膜形成用組成物11の印刷滲み評価はAであった。
実施例1において、半導体基板パッシベーション膜形成用組成物1の塗布を行わなかったこと以外は実施例1と同様にして、評価用基板を作製し、実効ライフタイムを測定して評価した。実効ライフタイムは、20μsであった。
Al2O3粒子(高純度化学社製、平均粒子径1μm)を2.00g、テルピネオールを1.98g、実施例2と同様にして調製したエチルセルロース溶液を3.98g混合して無色透明の組成物C2を調製した。
上記で調製した組成物C2を用いたこと以外は、実施例1と同様にして前処理したシリコン基板上にパッシベーション膜を形成し、同様にして評価した。実効ライフタイムは、21μsであった。
テトラエトキシシランを2.01g、テルピネオールを1.99g、実施例2と同様にして調製したエチルセルロース溶液を4.04g混合して無色透明の組成物C3を調製した。
上記で調製した組成物C3を用いたこと以外は、実施例1と同様にしてシリコン基板上にパッシベーション膜を形成し、同様にして評価した。実効ライフタイムは、23μsであった。
トリイソプロポキシアルミニウムを8.02g、精製水36.03g、濃硝酸(d=1.41)を0.15g混合し、100℃で1時間攪拌して組成物C4を調製した。
上記で調製した組成物C4を用いたこと以外は、実施例5と同様にしてアルミニウム電極を形成したシリコン基板上にパッシベーション膜を形成し、同様にして評価した。
パッシベーション膜を形成した領域の実効ライフタイムは、110μsであった。またアルミニウム電極の表面には、半導体基板パッシベーション膜形成用組成物C4に由来する異物が観察された。
上記で調製したパッシベーション膜形成用組成物C4の調製直後のせん断粘度は温度25℃、せん断速度1.0s-1で67.5Pa・s、25℃で30日間保存した後は36000Pa・sであった。従って粘度変化率は532%であった。
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Claims (8)
- 前記一般式(I)において、R1がそれぞれ独立して炭素数1~4のアルキル基である請求項1に記載のパッシベーション膜形成用組成物。
- 前記一般式(I)において、nが1~3の整数であり、R4がそれぞれ独立して水素原子又は炭素数1~4のアルキル基である請求項1又は請求項2に記載のパッシベーション膜形成用組成物。
- 前記樹脂の含有率が0.1質量%~30質量%である請求項1~請求項3のいずれか1項に記載のパッシベーション膜形成用組成物。
- 半導体基板と、前記半導体基板上の全面又は一部に設けられる、請求項1~請求項4のいずれか1項に記載のパッシベーション膜形成用組成物の熱処理物であるパッシベーション膜と、を有するパッシベーション膜付半導体基板。
- 半導体基板上の全面又は一部に、請求項1~請求項4のいずれか1項に記載のパッシベーション膜形成用組成物を用いて組成物層を形成する工程と、前記組成物層を熱処理して、パッシベーション膜を形成する工程と、を有するパッシベーション膜付半導体基板の製造方法。
- p型層及びn型層がpn接合されてなる半導体基板と、
前記半導体基板上の全面又は一部に設けられた請求項1~請求項4のいずれか1項に記載のパッシベーション膜形成用組成物の熱処理物であるパッシベーション膜と、
前記半導体基板の前記p型層及び前記n型層からなる群より選択される1以上の層上に配置された電極と、
を有する太陽電池素子。 - p型層及びn型層が接合されてなるpn接合を有し、前記p型層及び前記n型層からなる群より選択される1以上の層上に電極を有する半導体基板の、前記電極を有する面の一方又は両方の面上に、請求項1~請求項4のいずれか1項に記載のパッシベーション膜形成用組成物を付与して組成物層を形成する工程と、
前記組成物層を熱処理して、パッシベーション膜を形成する工程と、
を有する太陽電池素子の製造方法。
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Families Citing this family (3)
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CN105623320B (zh) * | 2014-11-07 | 2018-02-13 | 罗门哈斯电子材料有限公司 | 有机铝材料 |
EP3858606B1 (de) * | 2020-01-28 | 2022-09-07 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Farbiges fassadenelement mit verbundscheibenstruktur |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818973A (ja) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPS5823486A (ja) * | 1981-08-04 | 1983-02-12 | Toshiba Corp | 太陽電池の製造方法 |
JPH06125103A (ja) * | 1991-08-26 | 1994-05-06 | Canon Inc | 太陽電池モジュール |
JP2007287821A (ja) * | 2006-04-14 | 2007-11-01 | Jsr Corp | アルミナ膜形成方法 |
JP2009283549A (ja) * | 2008-05-20 | 2009-12-03 | Mitsubishi Electric Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
JP2010040741A (ja) * | 2008-08-05 | 2010-02-18 | Konica Minolta Holdings Inc | 電子デバイス用の絶縁膜形成方法、電子デバイスの製造方法、薄膜トランジスタの製造方法、絶縁膜、電子デバイス及び薄膜トランジスタ |
JP2011216845A (ja) * | 2010-03-18 | 2011-10-27 | Ricoh Co Ltd | 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6286043A (ja) * | 1985-10-11 | 1987-04-20 | Mitsubishi Kasei Vinyl Co | 塩化ビニル系樹脂プラスチゾル組成物 |
US5516596A (en) * | 1994-12-19 | 1996-05-14 | Dow Corning Corporation | Method of forming a composite, article and composition |
JP2000294817A (ja) * | 1999-04-09 | 2000-10-20 | Dainippon Printing Co Ltd | 太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル |
JP2000319530A (ja) * | 1999-05-13 | 2000-11-21 | Asahi Chem Ind Co Ltd | 半導体素子用組成物 |
US6312565B1 (en) * | 2000-03-23 | 2001-11-06 | Agere Systems Guardian Corp. | Thin film deposition of mixed metal oxides |
JP2002154184A (ja) * | 2000-08-07 | 2002-05-28 | Jsr Corp | 透明導電性シート |
JP3737060B2 (ja) * | 2002-03-25 | 2006-01-18 | 株式会社リコー | 電子写真用キャリア、電子写真用現像剤及び画像形成方法 |
JP2004006565A (ja) * | 2002-04-16 | 2004-01-08 | Sharp Corp | 太陽電池とその製造方法 |
JP4611617B2 (ja) * | 2002-04-26 | 2011-01-12 | 株式会社カネカ | 発光ダイオード |
JP3790242B2 (ja) * | 2003-09-26 | 2006-06-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2006279019A (ja) * | 2005-03-03 | 2006-10-12 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
CN101199060B (zh) * | 2005-06-22 | 2010-12-22 | 京瓷株式会社 | 太阳电池元件和太阳电池元件的制造方法 |
EP1965256B1 (en) * | 2005-11-30 | 2014-04-30 | Sumitomo Bakelite Co., Ltd. | Positive photosensitive resin composition, and use of the same for manufacturing a semiconductor device and a display |
JP4767110B2 (ja) * | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
JP2008138159A (ja) * | 2006-11-07 | 2008-06-19 | Hitachi Chem Co Ltd | 樹脂組成物及びこれを用いた半導体装置 |
JP2009088203A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
DE102008044769A1 (de) * | 2008-08-28 | 2010-03-04 | Clariant International Limited | Verfahren zur Herstellung von keramischen Passivierungsschichten auf Silizium für die Solarzellenfertigung |
JP5058184B2 (ja) * | 2009-01-23 | 2012-10-24 | 三菱電機株式会社 | 光起電力装置の製造方法 |
WO2011052572A1 (ja) * | 2009-10-30 | 2011-05-05 | 住友化学株式会社 | 有機光電変換素子 |
EP2517255B1 (en) * | 2009-12-25 | 2019-07-03 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
JP5747908B2 (ja) * | 2010-03-04 | 2015-07-15 | 日本ゼオン株式会社 | 半導体素子基板の製造方法 |
-
2012
- 2012-12-28 JP JP2013552431A patent/JP6334919B2/ja not_active Expired - Fee Related
- 2012-12-28 KR KR1020147019198A patent/KR20140117399A/ko not_active Application Discontinuation
- 2012-12-28 WO PCT/JP2012/084159 patent/WO2013103140A1/ja active Application Filing
- 2012-12-28 CN CN201280066134.2A patent/CN104081504A/zh active Pending
- 2012-12-28 US US14/370,659 patent/US20150303318A1/en not_active Abandoned
- 2012-12-28 TW TW106111424A patent/TW201723056A/zh unknown
- 2012-12-28 TW TW101150801A patent/TW201331283A/zh unknown
-
2015
- 2015-11-09 JP JP2015219811A patent/JP2016066805A/ja active Pending
-
2018
- 2018-01-24 JP JP2018009426A patent/JP6673372B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818973A (ja) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPS5823486A (ja) * | 1981-08-04 | 1983-02-12 | Toshiba Corp | 太陽電池の製造方法 |
JPH06125103A (ja) * | 1991-08-26 | 1994-05-06 | Canon Inc | 太陽電池モジュール |
JP2007287821A (ja) * | 2006-04-14 | 2007-11-01 | Jsr Corp | アルミナ膜形成方法 |
JP2009283549A (ja) * | 2008-05-20 | 2009-12-03 | Mitsubishi Electric Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
JP2010040741A (ja) * | 2008-08-05 | 2010-02-18 | Konica Minolta Holdings Inc | 電子デバイス用の絶縁膜形成方法、電子デバイスの製造方法、薄膜トランジスタの製造方法、絶縁膜、電子デバイス及び薄膜トランジスタ |
JP2011216845A (ja) * | 2010-03-18 | 2011-10-27 | Ricoh Co Ltd | 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016058438A (ja) * | 2014-09-05 | 2016-04-21 | 日立化成株式会社 | パッシベーション層保護層形成用組成物、太陽電池素子及びその製造方法並びに太陽電池 |
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