ATE109307T1 - Methode zur herstellung einer schicht auf einem substrat. - Google Patents
Methode zur herstellung einer schicht auf einem substrat.Info
- Publication number
- ATE109307T1 ATE109307T1 AT89303822T AT89303822T ATE109307T1 AT E109307 T1 ATE109307 T1 AT E109307T1 AT 89303822 T AT89303822 T AT 89303822T AT 89303822 T AT89303822 T AT 89303822T AT E109307 T1 ATE109307 T1 AT E109307T1
- Authority
- AT
- Austria
- Prior art keywords
- oxidation
- oxide layer
- temperature
- hcl
- atmosphere
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 abstract 7
- 238000007254 oxidation reaction Methods 0.000 abstract 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- -1 for example Substances 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/187,738 US4894353A (en) | 1988-04-29 | 1988-04-29 | Method of fabricating passivated tunnel oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE109307T1 true ATE109307T1 (de) | 1994-08-15 |
Family
ID=22690255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT89303822T ATE109307T1 (de) | 1988-04-29 | 1989-04-18 | Methode zur herstellung einer schicht auf einem substrat. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4894353A (de) |
EP (1) | EP0339852B1 (de) |
JP (1) | JP2911476B2 (de) |
AT (1) | ATE109307T1 (de) |
DE (1) | DE68917006T2 (de) |
ES (1) | ES2057113T3 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2084606T3 (es) * | 1988-12-21 | 1996-05-16 | At & T Corp | Procedimiento de oxidacion termica de crecimiento modificado para oxidos delgados. |
JP2504558B2 (ja) * | 1989-03-31 | 1996-06-05 | 日産自動車株式会社 | 熱酸化膜の形成方法 |
US5017979A (en) * | 1989-04-28 | 1991-05-21 | Nippondenso Co., Ltd. | EEPROM semiconductor memory device |
US6373093B2 (en) | 1989-04-28 | 2002-04-16 | Nippondenso Corporation | Semiconductor memory device and method of manufacturing the same |
US5057463A (en) * | 1990-02-28 | 1991-10-15 | Sgs-Thomson Microelectronics, Inc. | Thin oxide structure and method |
US6146135A (en) * | 1991-08-19 | 2000-11-14 | Tadahiro Ohmi | Oxide film forming method |
US5316981A (en) * | 1992-10-09 | 1994-05-31 | Advanced Micro Devices, Inc. | Method for achieving a high quality thin oxide using a sacrificial oxide anneal |
US5296411A (en) * | 1993-04-28 | 1994-03-22 | Advanced Micro Devices, Inc. | Method for achieving an ultra-reliable thin oxide using a nitrogen anneal |
US5498577A (en) * | 1994-07-26 | 1996-03-12 | Advanced Micro Devices, Inc. | Method for fabricating thin oxides for a semiconductor technology |
JP4001960B2 (ja) * | 1995-11-03 | 2007-10-31 | フリースケール セミコンダクター インコーポレイテッド | 窒化酸化物誘電体層を有する半導体素子の製造方法 |
US5753311A (en) * | 1996-10-01 | 1998-05-19 | National Science Council | Method for forming oxide layer |
US6204124B1 (en) * | 1998-03-23 | 2001-03-20 | Texas Instruments - Acer Incorporated | Method for forming high density nonvolatile memories with high capacitive-coupling ratio |
US6235651B1 (en) | 1999-09-14 | 2001-05-22 | Infineon Technologies North America | Process for improving the thickness uniformity of a thin layer in semiconductor wafer fabrication |
US7595967B1 (en) | 2004-09-07 | 2009-09-29 | Western Digital (Fremont), Llp | Method for fabricating a spacer layer for a magnetoresistive element |
US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911069A (de) * | 1972-05-26 | 1974-01-31 | ||
US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
JPS54125966A (en) * | 1978-03-24 | 1979-09-29 | Hitachi Ltd | Defect elimination method for semiconductor wafer |
JPS5662328A (en) * | 1979-10-26 | 1981-05-28 | Agency Of Ind Science & Technol | Manufacturing of insulation membrane and insulation membrane-semiconductor interface |
JPS56131935A (en) * | 1980-03-19 | 1981-10-15 | Sony Corp | Heat treatment of semiconductor substrate |
JPS56161646A (en) * | 1980-05-19 | 1981-12-12 | Fujitsu Ltd | Manufacture of semiconductor device |
DE3206376A1 (de) * | 1982-02-22 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von siliziumoxidschichten |
US4551910A (en) * | 1984-11-27 | 1985-11-12 | Intel Corporation | MOS Isolation processing |
US4784975A (en) * | 1986-10-23 | 1988-11-15 | International Business Machines Corporation | Post-oxidation anneal of silicon dioxide |
US4775642A (en) * | 1987-02-02 | 1988-10-04 | Motorola, Inc. | Modified source/drain implants in a double-poly non-volatile memory process |
-
1988
- 1988-04-29 US US07/187,738 patent/US4894353A/en not_active Expired - Lifetime
-
1989
- 1989-04-18 EP EP89303822A patent/EP0339852B1/de not_active Expired - Lifetime
- 1989-04-18 DE DE68917006T patent/DE68917006T2/de not_active Expired - Fee Related
- 1989-04-18 ES ES89303822T patent/ES2057113T3/es not_active Expired - Lifetime
- 1989-04-18 AT AT89303822T patent/ATE109307T1/de not_active IP Right Cessation
- 1989-04-20 JP JP10148289A patent/JP2911476B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68917006D1 (de) | 1994-09-01 |
JPH0212971A (ja) | 1990-01-17 |
ES2057113T3 (es) | 1994-10-16 |
EP0339852A2 (de) | 1989-11-02 |
US4894353A (en) | 1990-01-16 |
JP2911476B2 (ja) | 1999-06-23 |
EP0339852B1 (de) | 1994-07-27 |
DE68917006T2 (de) | 1995-01-19 |
EP0339852A3 (de) | 1991-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE109307T1 (de) | Methode zur herstellung einer schicht auf einem substrat. | |
US6380103B2 (en) | Rapid thermal etch and rapid thermal oxidation | |
ATE213095T1 (de) | Verfahren zur herstellung von oxydschichten | |
US4214919A (en) | Technique of growing thin silicon oxide films utilizing argon in the contact gas | |
DE69803076D1 (de) | Verfahren zum einsatzhärten | |
US4075367A (en) | Semiconductor processing of silicon nitride | |
EP0167208A2 (de) | Verfahren zur Bildung einer Oxydschicht auf einer Oberfläche aus Silicium | |
JPS61230329A (ja) | 半導体表面への酸化物薄膜の形成方法 | |
FR2371777A1 (fr) | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v | |
KR19980064163A (ko) | 실리콘단결정의 표면처리방법 및 실리콘단결정 박막의 제조방법 | |
JPH04369216A (ja) | 半導体基板への硼素拡散方法 | |
KR0137550B1 (ko) | 게이트 산화막 형성 방법 | |
US3499782A (en) | Substrate protective oxidized coating process | |
JP2000232222A (ja) | 半導体装置の製造方法 | |
DE2616677A1 (de) | Verfahren zur herstellung einer halbleitervorrichtung mit flacher oberflaeche | |
KR100265988B1 (ko) | 스택셀 디램 제조방법 | |
JPH02237025A (ja) | 半導体装置の製造方法 | |
de Araujo et al. | Selective Oxidation Using Ultrathin Nitrogen‐Rich Silicon Surface Layers Grown by Rapid Thermal Processing | |
JPH1027795A (ja) | 半導体装置の製造方法 | |
KR100227641B1 (ko) | 반도체 소자의 게이트 산화막 형성 방법 | |
JPH07130675A (ja) | 半導体ウェーハのホウ素拡散方法 | |
KR960008903B1 (ko) | 반도체 기판상의 유전체막 형성방법 | |
JPH07130676A (ja) | 半導体ウェーハのホウ素拡散方法 | |
JPS62266831A (ja) | 半導体装置の製造方法 | |
JPS6474739A (en) | Manufacture of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |