FR2371777A1 - Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v - Google Patents

Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v

Info

Publication number
FR2371777A1
FR2371777A1 FR7635294A FR7635294A FR2371777A1 FR 2371777 A1 FR2371777 A1 FR 2371777A1 FR 7635294 A FR7635294 A FR 7635294A FR 7635294 A FR7635294 A FR 7635294A FR 2371777 A1 FR2371777 A1 FR 2371777A1
Authority
FR
France
Prior art keywords
iii
silicon nitride
diffusion barrier
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7635294A
Other languages
English (en)
Other versions
FR2371777B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7635294A priority Critical patent/FR2371777A1/fr
Priority to US05/850,951 priority patent/US4137141A/en
Priority to JP13798777A priority patent/JPS5364471A/ja
Priority to NL7712708A priority patent/NL7712708A/xx
Publication of FR2371777A1 publication Critical patent/FR2371777A1/fr
Application granted granted Critical
Publication of FR2371777B1 publication Critical patent/FR2371777B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Le procédé permet de fabriquer sur un substrat une barrière de diffusion en nitrure de silicium, le substrat étant un semi-conducteur III-V, tel que l'arséniure de gallium, la barrière de diffusion étant capable de remplir sa fonction jusqu'à 900 degrés C pendant une durée prolongée. Dans le procédé, on désoxyde chimiquement le substrat, puis on le traite thermiquement à 400 degrés C avant de lui faire subir une première pulvérisation cathodique en atmosphère d'azote avec une cathode en silicium, on procède ensuite à une attaque ionique de la couche de nitrure de silicium, et enfin on procede à une seconde pulvérisation cathodique. Utilisable sur les semi-conducteurs III-V devant subir des traitements à haute température, tel que recuit après implantation.
FR7635294A 1976-11-18 1976-11-18 Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v Granted FR2371777A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7635294A FR2371777A1 (fr) 1976-11-18 1976-11-18 Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v
US05/850,951 US4137141A (en) 1976-11-18 1977-11-14 Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates
JP13798777A JPS5364471A (en) 1976-11-18 1977-11-18 Method of producing silicon nitride barrier on semiconductor substrate
NL7712708A NL7712708A (nl) 1976-11-18 1977-11-18 Werkwijze voor het aanbrengen van een diffusie- barriere op een halfgeleidersubstraat door mid- del van kathodesputteren.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7635294A FR2371777A1 (fr) 1976-11-18 1976-11-18 Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v

Publications (2)

Publication Number Publication Date
FR2371777A1 true FR2371777A1 (fr) 1978-06-16
FR2371777B1 FR2371777B1 (fr) 1980-08-22

Family

ID=9180215

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635294A Granted FR2371777A1 (fr) 1976-11-18 1976-11-18 Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v

Country Status (4)

Country Link
US (1) US4137141A (fr)
JP (1) JPS5364471A (fr)
FR (1) FR2371777A1 (fr)
NL (1) NL7712708A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2640078A1 (fr) * 1988-10-20 1990-06-08 Alcatel Transmission Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2593441B2 (ja) * 1986-01-16 1997-03-26 日新電機株式会社 高硬度膜被覆工具材料とその製造方法
US5047363A (en) * 1990-09-04 1991-09-10 Motorola, Inc. Method and apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
JP4128898B2 (ja) * 2003-04-18 2008-07-30 古河電気工業株式会社 半導体素子の製造方法
US20060045986A1 (en) * 2004-08-30 2006-03-02 Hochberg Arthur K Silicon nitride from aminosilane using PECVD
US7732071B2 (en) * 2006-11-10 2010-06-08 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording system with patterned medium and manufacturing process for the medium
US7670696B2 (en) * 2007-05-01 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording medium with patterned magnetic islands and nonmagnetic trenches and manufacturing method for suppressing surface diffusion of trench material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL257102A (fr) * 1960-10-18 1900-01-01
US3600218A (en) * 1968-05-15 1971-08-17 Ibm Method for depositing insulating films of silicon nitride and aluminum nitride
US3591477A (en) * 1968-07-17 1971-07-06 Mallory & Co Inc P R Process for growth and removal of passivating films in semiconductors
US3849276A (en) * 1971-03-19 1974-11-19 Ibm Process for forming reactive layers whose thickness is independent of time
GB1391842A (en) * 1971-08-04 1975-04-23 Elektromat Veb Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2640078A1 (fr) * 1988-10-20 1990-06-08 Alcatel Transmission Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Also Published As

Publication number Publication date
FR2371777B1 (fr) 1980-08-22
NL7712708A (nl) 1978-05-22
US4137141A (en) 1979-01-30
JPS5364471A (en) 1978-06-08

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