FR2371777B1 - - Google Patents
Info
- Publication number
- FR2371777B1 FR2371777B1 FR7635294A FR7635294A FR2371777B1 FR 2371777 B1 FR2371777 B1 FR 2371777B1 FR 7635294 A FR7635294 A FR 7635294A FR 7635294 A FR7635294 A FR 7635294A FR 2371777 B1 FR2371777 B1 FR 2371777B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7635294A FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
US05/850,951 US4137141A (en) | 1976-11-18 | 1977-11-14 | Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates |
JP13798777A JPS5364471A (en) | 1976-11-18 | 1977-11-18 | Method of producing silicon nitride barrier on semiconductor substrate |
NL7712708A NL7712708A (nl) | 1976-11-18 | 1977-11-18 | Werkwijze voor het aanbrengen van een diffusie- barriere op een halfgeleidersubstraat door mid- del van kathodesputteren. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7635294A FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2371777A1 FR2371777A1 (fr) | 1978-06-16 |
FR2371777B1 true FR2371777B1 (fr) | 1980-08-22 |
Family
ID=9180215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7635294A Granted FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
Country Status (4)
Country | Link |
---|---|
US (1) | US4137141A (fr) |
JP (1) | JPS5364471A (fr) |
FR (1) | FR2371777A1 (fr) |
NL (1) | NL7712708A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2593441B2 (ja) * | 1986-01-16 | 1997-03-26 | 日新電機株式会社 | 高硬度膜被覆工具材料とその製造方法 |
FR2640078B1 (fr) * | 1988-10-20 | 1992-07-31 | Alcatel Transmission | Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences |
US5047363A (en) * | 1990-09-04 | 1991-09-10 | Motorola, Inc. | Method and apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements |
US5217567A (en) * | 1992-02-27 | 1993-06-08 | International Business Machines Corporation | Selective etching process for boron nitride films |
JP4128898B2 (ja) * | 2003-04-18 | 2008-07-30 | 古河電気工業株式会社 | 半導体素子の製造方法 |
US20060045986A1 (en) * | 2004-08-30 | 2006-03-02 | Hochberg Arthur K | Silicon nitride from aminosilane using PECVD |
US7732071B2 (en) * | 2006-11-10 | 2010-06-08 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording system with patterned medium and manufacturing process for the medium |
US7670696B2 (en) * | 2007-05-01 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with patterned magnetic islands and nonmagnetic trenches and manufacturing method for suppressing surface diffusion of trench material |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL257102A (fr) * | 1960-10-18 | 1900-01-01 | ||
US3600218A (en) * | 1968-05-15 | 1971-08-17 | Ibm | Method for depositing insulating films of silicon nitride and aluminum nitride |
US3591477A (en) * | 1968-07-17 | 1971-07-06 | Mallory & Co Inc P R | Process for growth and removal of passivating films in semiconductors |
US3849276A (en) * | 1971-03-19 | 1974-11-19 | Ibm | Process for forming reactive layers whose thickness is independent of time |
GB1391842A (en) * | 1971-08-04 | 1975-04-23 | Elektromat Veb | Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel |
-
1976
- 1976-11-18 FR FR7635294A patent/FR2371777A1/fr active Granted
-
1977
- 1977-11-14 US US05/850,951 patent/US4137141A/en not_active Expired - Lifetime
- 1977-11-18 JP JP13798777A patent/JPS5364471A/ja active Pending
- 1977-11-18 NL NL7712708A patent/NL7712708A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7712708A (nl) | 1978-05-22 |
US4137141A (en) | 1979-01-30 |
JPS5364471A (en) | 1978-06-08 |
FR2371777A1 (fr) | 1978-06-16 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |