FR2640078B1 - Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences - Google Patents

Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Info

Publication number
FR2640078B1
FR2640078B1 FR8813780A FR8813780A FR2640078B1 FR 2640078 B1 FR2640078 B1 FR 2640078B1 FR 8813780 A FR8813780 A FR 8813780A FR 8813780 A FR8813780 A FR 8813780A FR 2640078 B1 FR2640078 B1 FR 2640078B1
Authority
FR
France
Prior art keywords
carrying
application
silicon nitride
depositing silicon
manufacturing microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8813780A
Other languages
English (en)
Other versions
FR2640078A1 (fr
Inventor
Cong Chanh Bui
Claude Bazillais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Transmission par Faisceaux Hertziens SA
Original Assignee
Alcatel Transmission par Faisceaux Hertziens SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Transmission par Faisceaux Hertziens SA filed Critical Alcatel Transmission par Faisceaux Hertziens SA
Priority to FR8813780A priority Critical patent/FR2640078B1/fr
Publication of FR2640078A1 publication Critical patent/FR2640078A1/fr
Application granted granted Critical
Publication of FR2640078B1 publication Critical patent/FR2640078B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
FR8813780A 1988-10-20 1988-10-20 Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences Expired - Lifetime FR2640078B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8813780A FR2640078B1 (fr) 1988-10-20 1988-10-20 Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8813780A FR2640078B1 (fr) 1988-10-20 1988-10-20 Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Publications (2)

Publication Number Publication Date
FR2640078A1 FR2640078A1 (fr) 1990-06-08
FR2640078B1 true FR2640078B1 (fr) 1992-07-31

Family

ID=9371178

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8813780A Expired - Lifetime FR2640078B1 (fr) 1988-10-20 1988-10-20 Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Country Status (1)

Country Link
FR (1) FR2640078B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
DE69125323T2 (de) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
DE69223479T2 (de) * 1991-09-27 1998-04-02 Hitachi Metals Ltd Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets
JP3868020B2 (ja) * 1995-11-13 2007-01-17 キヤノンアネルバ株式会社 遠距離スパッタ装置及び遠距離スパッタ方法
EP2604587A1 (fr) * 2011-12-12 2013-06-19 Umicore Composite céramique SiNx conducteur électrique, cible pour pulvérisation cathodique, et leur méthodes de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371777A1 (fr) * 1976-11-18 1978-06-16 Loic Henry Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v

Also Published As

Publication number Publication date
FR2640078A1 (fr) 1990-06-08

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Legal Events

Date Code Title Description
ST Notification of lapse