KR910007138A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR910007138A
KR910007138A KR1019900013910A KR900013910A KR910007138A KR 910007138 A KR910007138 A KR 910007138A KR 1019900013910 A KR1019900013910 A KR 1019900013910A KR 900013910 A KR900013910 A KR 900013910A KR 910007138 A KR910007138 A KR 910007138A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019900013910A
Other languages
English (en)
Other versions
KR940002838B1 (ko
Inventor
가즈노리 가네바코
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR910007138A publication Critical patent/KR910007138A/ko
Application granted granted Critical
Publication of KR940002838B1 publication Critical patent/KR940002838B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
KR1019900013910A 1989-09-04 1990-09-04 반도체장치의 제조방법 KR940002838B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-227477 1989-09-04
JP1227477A JP2509707B2 (ja) 1989-09-04 1989-09-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR910007138A true KR910007138A (ko) 1991-04-30
KR940002838B1 KR940002838B1 (ko) 1994-04-04

Family

ID=16861495

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900013910A KR940002838B1 (ko) 1989-09-04 1990-09-04 반도체장치의 제조방법

Country Status (6)

Country Link
US (1) US5094971A (ko)
EP (1) EP0441973B1 (ko)
JP (1) JP2509707B2 (ko)
KR (1) KR940002838B1 (ko)
DE (1) DE69007961T2 (ko)
WO (1) WO1991003837A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121701A (ja) * 1991-10-25 1993-05-18 Rohm Co Ltd Ｎａｎｄ構造の半導体装置の製造方法
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
JPH05304277A (ja) * 1992-04-28 1993-11-16 Rohm Co Ltd 半導体装置の製法
KR0140691B1 (ko) * 1992-08-20 1998-06-01 문정환 반도체 장치의 마스크롬 제조방법
US5429967A (en) * 1994-04-08 1995-07-04 United Microelectronics Corporation Process for producing a very high density mask ROM
US5380676A (en) * 1994-05-23 1995-01-10 United Microelectronics Corporation Method of manufacturing a high density ROM
US5516713A (en) * 1994-09-06 1996-05-14 United Microelectronics Corporation Method of making high coupling ratio NAND type flash memory
US6159800A (en) * 1997-04-11 2000-12-12 Programmable Silicon Solutions Method of forming a memory cell
US6057193A (en) * 1998-04-16 2000-05-02 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for NAND product

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
JPS58148448A (ja) * 1982-03-01 1983-09-03 Nippon Denso Co Ltd 半導体ｒｏｍの製造方法
JPS58154259A (ja) * 1982-03-10 1983-09-13 Nippon Denso Co Ltd 半導体ｒｏｍの製造方法
JPH0797606B2 (ja) * 1986-10-22 1995-10-18 株式会社日立製作所 半導体集積回路装置の製造方法
JPS63215063A (ja) * 1987-03-04 1988-09-07 Matsushita Electronics Corp 半導体装置の製造方法
JPS649763A (en) * 1987-07-02 1989-01-13 Minolta Camera Kk Printer
JPS6411358A (en) * 1987-07-06 1989-01-13 Toshiba Corp Semiconductor device and manufacture thereof
JPS6437867A (en) * 1987-08-04 1989-02-08 Seiko Epson Corp Semiconductor device
JP2607551B2 (ja) * 1987-10-23 1997-05-07 株式会社日立製作所 半導体記憶装置及びその製造方法
JPH01111358A (ja) * 1987-10-26 1989-04-28 Nec Corp 半導体装置用容器
JP2555103B2 (ja) * 1987-11-13 1996-11-20 株式会社日立製作所 半導体集積回路装置の製造方法
JPH01128565A (ja) * 1987-11-13 1989-05-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2509706B2 (ja) * 1989-08-18 1996-06-26 株式会社東芝 マスクｒｏｍの製造方法

Also Published As

Publication number Publication date
JP2509707B2 (ja) 1996-06-26
EP0441973A1 (en) 1991-08-21
DE69007961T2 (de) 1994-08-18
JPH0391262A (ja) 1991-04-16
WO1991003837A1 (en) 1991-03-21
DE69007961D1 (de) 1994-05-11
EP0441973A4 (en) 1991-10-02
US5094971A (en) 1992-03-10
KR940002838B1 (ko) 1994-04-04
EP0441973B1 (en) 1994-04-06

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