JPS6437867A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6437867A JPS6437867A JP62194654A JP19465487A JPS6437867A JP S6437867 A JPS6437867 A JP S6437867A JP 62194654 A JP62194654 A JP 62194654A JP 19465487 A JP19465487 A JP 19465487A JP S6437867 A JPS6437867 A JP S6437867A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- thresholds
- sections
- threshold voltage
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To bring an alignment margin to zero, and to enable the improvement of the degree of integration by conducting a kind of self-alignment-like ion implantation using a gate electrode. CONSTITUTION:Gate electrodes 103 through a gate oxide film 102 and gate electrodes 107 through a gate oxide film 105 are arranged alternately on an silicon substrate 101, and impurity layers 104 for controlling threshold voltage are formed near the surface of Si only in sections, threshold voltage of which must be fluctuated, in the electrodes 103. There is no ion implanting layer at sections where thresholds are not changed, and there are ion implanting layers at sections where thresholds do not exceed the thresholds of the electrodes 107 among the electrodes 103. There are impurity layers 106 for controlling threshold voltage only at sections, thresholds of which must be altered, under the electrodes 107. Accordingly, the ion implanting impurity layers for controlling threshold voltage are shaped in a self-alignment manner with the gate electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194654A JPS6437867A (en) | 1987-08-04 | 1987-08-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194654A JPS6437867A (en) | 1987-08-04 | 1987-08-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437867A true JPS6437867A (en) | 1989-02-08 |
Family
ID=16328102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62194654A Pending JPS6437867A (en) | 1987-08-04 | 1987-08-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437867A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991003837A1 (en) * | 1989-09-04 | 1991-03-21 | Kabushiki Kaisha Toshiba | Method of producing read-only semiconductor memory |
US8438890B2 (en) | 2007-04-26 | 2013-05-14 | Goal Co., Ltd. | Cylinder lock |
-
1987
- 1987-08-04 JP JP62194654A patent/JPS6437867A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991003837A1 (en) * | 1989-09-04 | 1991-03-21 | Kabushiki Kaisha Toshiba | Method of producing read-only semiconductor memory |
US5094971A (en) * | 1989-09-04 | 1992-03-10 | Kabushiki Kaisha Toshiba | Method of manufacturing a read only semiconductor memory device |
US8438890B2 (en) | 2007-04-26 | 2013-05-14 | Goal Co., Ltd. | Cylinder lock |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6446981A (en) | Semiconductor device | |
JPS5742164A (en) | Semiconductor device | |
JPS55133574A (en) | Insulated gate field effect transistor | |
CA2084174A1 (en) | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame | |
JPS6437867A (en) | Semiconductor device | |
JPS57192063A (en) | Manufacture of semiconductor device | |
JPS5587481A (en) | Mis type semiconductor device | |
JPS6453476A (en) | Superconducting three-terminal element and manufacture thereof | |
JPS5556663A (en) | Insulating-gate type field-effect transistor | |
JPS5742167A (en) | Production of mos type semiconductor device | |
JPS5583263A (en) | Mos semiconductor device | |
JPS57164573A (en) | Semiconductor device | |
JPS6439065A (en) | Thin film field-effect transistor | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS6489372A (en) | Semiconductor device | |
JPS6455867A (en) | Semiconductor device | |
JPS57102073A (en) | Semiconductor memory and manufacture thereof | |
JPH0234937A (en) | Manufacture of semiconductor device | |
JPS5563876A (en) | Field-effect semiconductor device | |
JPS55121680A (en) | Manufacture of semiconductor device | |
JPS6427256A (en) | Semiconductor device | |
JPS56131960A (en) | Semiconductor device and its preparation | |
JPS57128957A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS57192083A (en) | Semiconductor device | |
JPS57172758A (en) | Manufacture of semiconductor device |