KR910007132A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR910007132A
KR910007132A KR1019900014302A KR900014302A KR910007132A KR 910007132 A KR910007132 A KR 910007132A KR 1019900014302 A KR1019900014302 A KR 1019900014302A KR 900014302 A KR900014302 A KR 900014302A KR 910007132 A KR910007132 A KR 910007132A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019900014302A
Other languages
English (en)
Other versions
KR940004454B1 (ko
Inventor
도오루 요시다
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR910007132A publication Critical patent/KR910007132A/ko
Application granted granted Critical
Publication of KR940004454B1 publication Critical patent/KR940004454B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019900014302A 1989-09-11 1990-09-11 반도체장치의 제조방법 KR940004454B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1232904A JPH081930B2 (ja) 1989-09-11 1989-09-11 半導体装置の製造方法
JP1-232904 1989-09-11

Publications (2)

Publication Number Publication Date
KR910007132A true KR910007132A (ko) 1991-04-30
KR940004454B1 KR940004454B1 (ko) 1994-05-25

Family

ID=16946660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014302A KR940004454B1 (ko) 1989-09-11 1990-09-11 반도체장치의 제조방법

Country Status (5)

Country Link
US (2) US5460984A (ko)
EP (1) EP0417715B1 (ko)
JP (1) JPH081930B2 (ko)
KR (1) KR940004454B1 (ko)
DE (1) DE69031702T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682425B2 (ja) * 1993-12-24 1997-11-26 日本電気株式会社 半導体装置の製造方法
JPH0878776A (ja) * 1994-09-06 1996-03-22 Fuji Xerox Co Ltd 半導体レーザ装置
US5573963A (en) * 1995-05-03 1996-11-12 Vanguard International Semiconductor Corporation Method of forming self-aligned twin tub CMOS devices
KR0146080B1 (ko) * 1995-07-26 1998-08-01 문정환 반도체 소자의 트윈 웰 형성방법
DE19534784C1 (de) * 1995-09-19 1997-04-24 Siemens Ag Halbleiter-Schaltungselement und Verfahren zu seiner Herstellung
US5573962A (en) * 1995-12-15 1996-11-12 Vanguard International Semiconductor Corporation Low cycle time CMOS process
KR100189739B1 (ko) * 1996-05-02 1999-06-01 구본준 반도체 기판에 삼중웰을 형성하는 방법
US5776816A (en) * 1996-10-28 1998-07-07 Holtek Microelectronics, Inc. Nitride double etching for twin well align
CN1067800C (zh) * 1996-11-14 2001-06-27 联华电子股份有限公司 集成电路的制造方法
US6017787A (en) * 1996-12-31 2000-01-25 Lucent Technologies Inc. Integrated circuit with twin tub
DE19752848C2 (de) * 1997-11-28 2003-12-24 Infineon Technologies Ag Elektrisch entkoppelter Feldeffekt-Transistor in Dreifach-Wanne und Verwendung desselben
KR100263909B1 (ko) * 1998-06-15 2000-09-01 윤종용 반도체 집적회로의 다중 웰 형성방법
FR2826507B1 (fr) * 2001-06-21 2004-07-02 St Microelectronics Sa Procede de traitement de zones complementaires de la surface d'un substrat et produit semi-conducteur obtenu par ce procede
JP6216142B2 (ja) * 2012-05-28 2017-10-18 キヤノン株式会社 半導体装置の製造方法
CN106653599B (zh) * 2015-11-02 2021-03-16 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212162A (en) * 1962-01-05 1965-10-19 Fairchild Camera Instr Co Fabricating semiconductor devices
JPS5737877A (en) * 1980-08-20 1982-03-02 Seiko Epson Corp Semiconductor device
DE3149185A1 (de) * 1981-12-11 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung benachbarter mit dotierstoffionen implantierter wannen bei der herstellung von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
JPS60105267A (ja) * 1983-11-14 1985-06-10 Toshiba Corp 半導体装置の製造方法
JPS60138955A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
JPS60194558A (ja) * 1984-03-16 1985-10-03 Hitachi Ltd 半導体装置の製造方法
JPH0793282B2 (ja) * 1985-04-15 1995-10-09 株式会社日立製作所 半導体装置の製造方法
EP0260271A1 (en) * 1986-03-04 1988-03-23 Motorola, Inc. High/low doping profile for twin well process
JPS63207169A (ja) * 1987-02-24 1988-08-26 Toshiba Corp 半導体記憶装置及びその製造方法
US4795716A (en) * 1987-06-19 1989-01-03 General Electric Company Method of making a power IC structure with enhancement and/or CMOS logic
US5260226A (en) * 1987-07-10 1993-11-09 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US4983534A (en) * 1988-01-05 1991-01-08 Nec Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
EP0417715A1 (en) 1991-03-20
US6011292A (en) 2000-01-04
DE69031702T2 (de) 1998-04-02
KR940004454B1 (ko) 1994-05-25
JPH081930B2 (ja) 1996-01-10
DE69031702D1 (de) 1997-12-18
US5460984A (en) 1995-10-24
JPH0397261A (ja) 1991-04-23
EP0417715B1 (en) 1997-11-12

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