DE69007961D1 - Verfahren zum herstellen eines nur-lese-halbleiterspeichers. - Google Patents

Verfahren zum herstellen eines nur-lese-halbleiterspeichers.

Info

Publication number
DE69007961D1
DE69007961D1 DE90912937T DE69007961T DE69007961D1 DE 69007961 D1 DE69007961 D1 DE 69007961D1 DE 90912937 T DE90912937 T DE 90912937T DE 69007961 T DE69007961 T DE 69007961T DE 69007961 D1 DE69007961 D1 DE 69007961D1
Authority
DE
Germany
Prior art keywords
read
producing
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90912937T
Other languages
English (en)
Other versions
DE69007961T2 (de
Inventor
Kazunori Kanebako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69007961D1 publication Critical patent/DE69007961D1/de
Publication of DE69007961T2 publication Critical patent/DE69007961T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
DE69007961T 1989-09-04 1990-09-04 Verfahren zum herstellen eines nur-lese-halbleiterspeichers. Expired - Fee Related DE69007961T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1227477A JP2509707B2 (ja) 1989-09-04 1989-09-04 半導体装置の製造方法
PCT/JP1990/001126 WO1991003837A1 (en) 1989-09-04 1990-09-04 Method of producing read-only semiconductor memory

Publications (2)

Publication Number Publication Date
DE69007961D1 true DE69007961D1 (de) 1994-05-11
DE69007961T2 DE69007961T2 (de) 1994-08-18

Family

ID=16861495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69007961T Expired - Fee Related DE69007961T2 (de) 1989-09-04 1990-09-04 Verfahren zum herstellen eines nur-lese-halbleiterspeichers.

Country Status (6)

Country Link
US (1) US5094971A (de)
EP (1) EP0441973B1 (de)
JP (1) JP2509707B2 (de)
KR (1) KR940002838B1 (de)
DE (1) DE69007961T2 (de)
WO (1) WO1991003837A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121701A (ja) * 1991-10-25 1993-05-18 Rohm Co Ltd Ｎａｎｄ構造の半導体装置の製造方法
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
JPH05304277A (ja) * 1992-04-28 1993-11-16 Rohm Co Ltd 半導体装置の製法
KR0140691B1 (ko) * 1992-08-20 1998-06-01 문정환 반도체 장치의 마스크롬 제조방법
US5429967A (en) * 1994-04-08 1995-07-04 United Microelectronics Corporation Process for producing a very high density mask ROM
US5380676A (en) * 1994-05-23 1995-01-10 United Microelectronics Corporation Method of manufacturing a high density ROM
US5516713A (en) * 1994-09-06 1996-05-14 United Microelectronics Corporation Method of making high coupling ratio NAND type flash memory
US6159800A (en) * 1997-04-11 2000-12-12 Programmable Silicon Solutions Method of forming a memory cell
US6057193A (en) 1998-04-16 2000-05-02 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for NAND product

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
JPS58148448A (ja) * 1982-03-01 1983-09-03 Nippon Denso Co Ltd 半導体ｒｏｍの製造方法
JPS58154259A (ja) * 1982-03-10 1983-09-13 Nippon Denso Co Ltd 半導体ｒｏｍの製造方法
JPH0797606B2 (ja) * 1986-10-22 1995-10-18 株式会社日立製作所 半導体集積回路装置の製造方法
JPS63215063A (ja) * 1987-03-04 1988-09-07 Matsushita Electronics Corp 半導体装置の製造方法
JPS649763A (en) * 1987-07-02 1989-01-13 Minolta Camera Kk Printer
JPS6411358A (en) * 1987-07-06 1989-01-13 Toshiba Corp Semiconductor device and manufacture thereof
JPS6437867A (en) * 1987-08-04 1989-02-08 Seiko Epson Corp Semiconductor device
JP2607551B2 (ja) * 1987-10-23 1997-05-07 株式会社日立製作所 半導体記憶装置及びその製造方法
JPH01111358A (ja) * 1987-10-26 1989-04-28 Nec Corp 半導体装置用容器
JP2555103B2 (ja) * 1987-11-13 1996-11-20 株式会社日立製作所 半導体集積回路装置の製造方法
JPH01128565A (ja) * 1987-11-13 1989-05-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2509706B2 (ja) * 1989-08-18 1996-06-26 株式会社東芝 マスクｒｏｍの製造方法

Also Published As

Publication number Publication date
WO1991003837A1 (en) 1991-03-21
EP0441973A4 (en) 1991-10-02
JPH0391262A (ja) 1991-04-16
DE69007961T2 (de) 1994-08-18
JP2509707B2 (ja) 1996-06-26
EP0441973A1 (de) 1991-08-21
EP0441973B1 (de) 1994-04-06
KR910007138A (ko) 1991-04-30
US5094971A (en) 1992-03-10
KR940002838B1 (ko) 1994-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee