EP0468758B1 - Méthode de formation de films isolants, de capacités et de dispositifs semi-conducteurs - Google Patents

Méthode de formation de films isolants, de capacités et de dispositifs semi-conducteurs Download PDF

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EP0468758B1
EP0468758B1 EP91306729A EP91306729A EP0468758B1 EP 0468758 B1 EP0468758 B1 EP 0468758B1 EP 91306729 A EP91306729 A EP 91306729A EP 91306729 A EP91306729 A EP 91306729A EP 0468758 B1 EP0468758 B1 EP 0468758B1
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Prior art keywords
gas
sputtering
oxide
film
nitride
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EP91306729A
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German (de)
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EP0468758A1 (fr
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Shunpei Yamazaki
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority claimed from JP19517690A external-priority patent/JP3155270B2/ja
Priority claimed from JP2195174A external-priority patent/JP2945946B2/ja
Priority claimed from JP19517590A external-priority patent/JP3179779B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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Claims (15)

  1. Procédé de formation d'un film d'oxyde isolant (3; 11) pour un dispositif électronique, comprenant les étapes consistant à :
       déposer une couche d'oxyde (3; 11) sur une surface (1) par pulvérisation cathodique dans un gaz pour pulvérisation cathodique comprenant un gaz oxydant dans une proportion non inférieure à 75 %, ladite couche d'oxyde comprenant un oxyde sélectionné dans le groupe constitué par l'oxyde de tantale, l'oxyde de titane, le titanate de baryum et le titanate de plomb, ledit gaz pour pulvérisation cathodique contenant également un composé halogéné gazeux.
  2. Procédé de formation d'un film d'oxyde (3; 11) d'une capacité d'un circuit intégré, comprenant les étapes consistant à :
       déposer une couche d'oxyde (3; 11) sur une électrode inférieure (2; 10; 10, 10') de la capacité par pulvérisation cathodique dans un gaz pour pulvérisation cathodique contenant un gaz oxydant dans une proportion non inférieure à 75 % et un composé halogéné gazeux.
  3. Procédé selon la revendication 1 ou 2, comprenant par ailleurs l'étape d'irradiation de ladite couche d'oxyde (3; 11) par des impulsions de laser excimère.
  4. Procédé selon l'une quelconque des revendications précédentes, dans lequel on met en oeuvre une cible comprenant un oxyde sélectionné dans le groupe constitué par l'oxyde de tantale, l'oxyde de titane, le titanate de baryum et le titanate de plomb.
  5. Procédé selon l'une quelconque des revendications 1 à 3, dans lequel on met en oeuvre une cible comprenant un métal sélectionné dans le groupe constitué par le titane et le tantale.
  6. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit gaz oxydant est un gaz sélectionné dans le groupe constitué par l'oxygène, N2O et O3.
  7. Procédé de fabrication d'une couche de nitrure (3; 11) pour un dispositif électronique, comprenant les étapes consistant à :
       déposer une couche de nitrure (3; 11) sur une surface (1) par pulvérisation cathodique dans un gaz pour pulvérisation cathodique contenant un gaz nitrurant dans une proportion non inférieure à 50 %, et un composé halogéné gazeux.
  8. Procédé selon la revendication 7, comprenant par ailleurs l'étape d'irradiation de ladite couche de nitrure (3; 11) par des impulsions de laser excimère.
  9. Procédé selon la revendication 7 ou 8, dans lequel on utilise une cible comprenant un nitrure sélectionnée dans le groupe constitué par le nitrure de silicium, le nitrure de tantale et le nitrure de titane.
  10. Procédé selon l'une quelconque des revendications 7 à 9, dans lequel ledit gaz nitrurant est un gaz sélectionné dans le groupe constitué par l'ammoniac et N2.
  11. Procédé selon la revendication 1, la revendication 7 ou les revendications qui en dépendent, dans lequel ledit dispositif électronique est une capacité.
  12. Procédé selon la revendication 1, la revendication 7 ou les revendications qui en dépendent, dans lequel ledit dispositif électronique est un dispositif MIS.
  13. Procédé selon l'une quelconque des revendications précédentes, dans lequel ladite pulvérisation cathodique est une pulvérisation cathodique à magnétron RF.
  14. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit gaz pour pulvérisation cathodique contient par ailleurs un gaz inerte.
  15. Procédé selon la revendication 14, dans lequel ledit gaz inerte est l'argon.
EP91306729A 1990-07-24 1991-07-24 Méthode de formation de films isolants, de capacités et de dispositifs semi-conducteurs Expired - Lifetime EP0468758B1 (fr)

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JP195176/90 1990-07-24
JP195175/90 1990-07-24
JP19517690A JP3155270B2 (ja) 1990-07-24 1990-07-24 金属酸化物絶縁膜の作製方法
JP195174/90 1990-07-24
JP2195174A JP2945946B2 (ja) 1990-07-24 1990-07-24 酸化物絶縁膜の作製方法
JP19517590A JP3179779B2 (ja) 1990-07-24 1990-07-24 窒化物絶縁膜の作製方法

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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
TW403972B (en) * 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US6867432B1 (en) 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
JP3929513B2 (ja) * 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
JPH09181274A (ja) * 1995-10-27 1997-07-11 Nittetsu Semiconductor Kk 半導体記憶装置およびその製造方法
KR0183868B1 (ko) * 1996-05-25 1999-04-15 김광호 강유전체막 및 그의 형성방법
KR100225946B1 (ko) * 1996-06-27 1999-10-15 김영환 반도체 소자의 금속 배선 형성방법
KR100243285B1 (ko) * 1997-02-27 2000-02-01 윤종용 고유전 커패시터 및 그 제조방법
JPH10313097A (ja) * 1997-05-13 1998-11-24 Sharp Corp 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子
US5910880A (en) * 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
TW404021B (en) * 1998-04-09 2000-09-01 Hitachi Ltd Semiconductor memory device and manufacturing method thereof
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6100200A (en) * 1998-12-21 2000-08-08 Advanced Technology Materials, Inc. Sputtering process for the conformal deposition of a metallization or insulating layer
TW465179B (en) * 1999-05-27 2001-11-21 Murata Manufacturing Co Surface acoustic wave device and method of producing the same
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
JP2003522420A (ja) * 2000-02-03 2003-07-22 ケース ウェスタン リザーブ ユニバーシティ 金属粉末あるいは金属スポンジ粒子の薄層からの高電力コンデンサ
US6319766B1 (en) * 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US7005695B1 (en) 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
US6429097B1 (en) 2000-05-22 2002-08-06 Sharp Laboratories Of America, Inc. Method to sputter silicon films
US6830965B1 (en) 2000-10-25 2004-12-14 Sharp Laboratories Of America, Inc. Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
US6495436B2 (en) * 2001-02-09 2002-12-17 Micron Technology, Inc. Formation of metal oxide gate dielectric
GB0108782D0 (en) * 2001-04-07 2001-05-30 Trikon Holdings Ltd Methods and apparatus for forming precursors
US6579425B2 (en) 2001-07-16 2003-06-17 Sharp Laboratories Of America, Inc. System and method for forming base coat and thin film layers by sequential sputter depositing
US6818493B2 (en) * 2001-07-26 2004-11-16 Motorola, Inc. Selective metal oxide removal performed in a reaction chamber in the absence of RF activation
CN1292717C (zh) * 2002-01-22 2007-01-03 杰富意钢铁株式会社 涂覆有陶瓷的医疗器械和生物研究器械及其制造方法
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
FR2848810B1 (fr) * 2002-12-19 2005-11-11 Pol Jean Marie Robert Thiry Fil orthodontique a caracteristiques mecaniques elevees et a faible frottement dans les attaches
US6794700B1 (en) * 2003-04-10 2004-09-21 Texas Instruments Incorporated Capacitor having a dielectric layer including a group 17 element
US7205595B2 (en) 2004-03-31 2007-04-17 Intel Corporation Polymer memory device with electron traps
EP2222887B1 (fr) * 2007-11-30 2013-11-06 Anna University - Chennai Films de nitrure de titane non st chiométrique
US8569104B2 (en) * 2012-02-07 2013-10-29 Intermolecular, Inc. Transition metal oxide bilayers
JP5955658B2 (ja) * 2012-06-15 2016-07-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
TWI538023B (zh) 2013-04-17 2016-06-11 華亞科技股份有限公司 具有凹入式閘極結構之記憶體單元及其製作方法
GB2590613B (en) * 2019-12-16 2023-06-07 Dyson Technology Ltd Method and apparatus for use in generating plasma

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445535A2 (fr) * 1990-02-06 1991-09-11 Sel Semiconductor Energy Laboratory Co., Ltd. Procédé de formation d'un film d'oxyde

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6507670A (fr) * 1964-06-30 1965-12-31
US3616400A (en) * 1968-03-25 1971-10-26 Matsushita Electric Ind Co Ltd Method of making thin film capacitor
US3607697A (en) * 1968-04-18 1971-09-21 Sprague Electric Co Sputtering process for making a film of silica and silicon nitride
US3607679A (en) * 1969-05-05 1971-09-21 Bell Telephone Labor Inc Method for the fabrication of discrete rc structure
US3763026A (en) * 1969-12-22 1973-10-02 Gen Electric Method of making resistor thin films by reactive sputtering from a composite source
JPS5537250U (fr) * 1978-08-31 1980-03-10
US4350537A (en) * 1979-10-17 1982-09-21 Itt Industries Inc. Semiconductor annealing by pulsed heating
US4883543A (en) * 1980-06-05 1989-11-28 Texas Instruments Incroporated Shielding for implant in manufacture of dynamic memory
GB2103879B (en) * 1981-08-19 1985-04-11 Secr Defence Method for producing a vertical channel transistor
US4427723A (en) * 1982-02-10 1984-01-24 Rockwell International Corporation Method and apparatus for laser-stimulated vacuum deposition and annealing technique
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
JPS5999726A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
US4539431A (en) * 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
JPS6057634A (ja) * 1983-09-08 1985-04-03 Agency Of Ind Science & Technol 表面保護膜形成方法
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
US4732659A (en) * 1984-06-11 1988-03-22 Stauffer Chemical Company Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor
US4786953A (en) * 1984-07-16 1988-11-22 Nippon Telegraph & Telephone Vertical MOSFET and method of manufacturing the same
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
JPS6223117A (ja) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd 酸化膜の選択形成方法
US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
JPS62128175A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd 半導体装置
JPS62142318A (ja) * 1985-12-17 1987-06-25 Mitsubishi Electric Corp 半導体装置の製造方法
US4790920A (en) * 1985-12-20 1988-12-13 Intel Corporation Method for depositing an al2 O3 cap layer on an integrated circuit substrate
JPS62261128A (ja) * 1986-05-08 1987-11-13 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ型半導体装置の製造方法
JPH07120717B2 (ja) * 1986-05-19 1995-12-20 日本電気株式会社 半導体記憶装置の製造方法
US4975383A (en) * 1986-06-02 1990-12-04 Texas Instruments Incorporated Method for making an electrically erasable programmable read only memory cell having a three dimensional floating gate
JPS62298119A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置
US5017504A (en) * 1986-12-01 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
JPS63199456A (ja) * 1987-02-16 1988-08-17 Hitachi Ltd 半導体集積回路装置
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US4906328A (en) * 1987-07-16 1990-03-06 Texas Instruments Incorporated Method for wafer treating
JPS6439058A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH07114240B2 (ja) * 1987-11-17 1995-12-06 三菱電機株式会社 半導体記憶装置およびその製造方法
US4963504A (en) * 1987-11-23 1990-10-16 Xerox Corporation Method for fabricating double implanted LDD transistor self-aligned with gate
JPH01171275A (ja) * 1987-12-25 1989-07-06 Matsushita Graphic Commun Syst Inc 薄膜トランジスタの製造方法
JP2507502B2 (ja) * 1987-12-28 1996-06-12 三菱電機株式会社 半導体装置
JPH0631613B2 (ja) * 1988-02-08 1994-04-27 豊興工業株式会社 可変容量形油圧ポンプ
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
JPH01225148A (ja) * 1988-03-04 1989-09-08 Toshiba Corp 誘電体薄膜及びその製造方法
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
JPH01248557A (ja) * 1988-03-29 1989-10-04 Toshiba Corp 半導体記憶装置およびその製造方法
US5109357A (en) * 1988-04-22 1992-04-28 Ramtron Corporation DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof
US4849081A (en) * 1988-06-22 1989-07-18 The Boc Group, Inc. Formation of oxide films by reactive sputtering
JP2667465B2 (ja) * 1988-09-14 1997-10-27 株式会社東芝 半導体装置
US5181088A (en) * 1988-09-14 1993-01-19 Kabushiki Kaisha Toshiba Vertical field effect transistor with an extended polysilicon channel region
FR2640078B1 (fr) * 1988-10-20 1992-07-31 Alcatel Transmission Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences
US4920065A (en) * 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
JP2904533B2 (ja) * 1989-03-09 1999-06-14 株式会社東芝 半導体装置の製造方法
JPH0316129A (ja) * 1989-03-22 1991-01-24 Fuji Electric Co Ltd 窒化シリコン膜の生成方法
JPH02258689A (ja) * 1989-03-31 1990-10-19 Canon Inc 結晶質薄膜の形成方法
US5136534A (en) * 1989-06-30 1992-08-04 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US4931897A (en) * 1989-08-07 1990-06-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor capacitive element
JPH0379028A (ja) * 1989-08-22 1991-04-04 Fuji Electric Co Ltd 酸化窒化シリコン膜の生成方法
US5056010A (en) * 1989-10-30 1991-10-08 Industrial Technology Research Institute Pointer based DMA controller
US5006481A (en) * 1989-11-30 1991-04-09 Sgs-Thomson Microelectronics, Inc. Method of making a stacked capacitor DRAM cell
US5053842A (en) * 1990-05-30 1991-10-01 Seiko Instruments Inc. Semiconductor nonvolatile memory
JPH0461337A (ja) * 1990-06-29 1992-02-27 Matsushita Electric Ind Co Ltd 酸化タンタル薄膜の製造方法
JP2742631B2 (ja) * 1990-07-24 1998-04-22 トヨタ自動車株式会社 非晶質磁性膜の製造方法
US5464780A (en) * 1990-07-25 1995-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulated gate effect transistor in a substrate depression
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445535A2 (fr) * 1990-02-06 1991-09-11 Sel Semiconductor Energy Laboratory Co., Ltd. Procédé de formation d'un film d'oxyde

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US5665210A (en) 1997-09-09
DE69125323T2 (de) 1997-09-25
DE69125323D1 (de) 1997-04-30

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