KR880007406A - 저온 형성 다중층 세라믹의 백금 및 로듐 촉매화 - Google Patents
저온 형성 다중층 세라믹의 백금 및 로듐 촉매화 Download PDFInfo
- Publication number
- KR880007406A KR880007406A KR870013691A KR870013691A KR880007406A KR 880007406 A KR880007406 A KR 880007406A KR 870013691 A KR870013691 A KR 870013691A KR 870013691 A KR870013691 A KR 870013691A KR 880007406 A KR880007406 A KR 880007406A
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic
- coating
- electronic device
- silsesquioxane resin
- hydrogen silsesquioxane
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims 100
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims 30
- 229910052697 platinum Inorganic materials 0.000 title claims 15
- 239000010948 rhodium Substances 0.000 title claims 15
- 229910052703 rhodium Inorganic materials 0.000 title claims 15
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 title claims 15
- 238000006555 catalytic reaction Methods 0.000 title 1
- 238000000576 coating method Methods 0.000 claims 144
- 239000011248 coating agent Substances 0.000 claims 133
- 239000011347 resin Substances 0.000 claims 73
- 229920005989 resin Polymers 0.000 claims 73
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims 66
- 239000003054 catalyst Substances 0.000 claims 42
- 239000002904 solvent Substances 0.000 claims 42
- 239000000203 mixture Substances 0.000 claims 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 28
- 238000000034 method Methods 0.000 claims 27
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 24
- 229920000642 polymer Polymers 0.000 claims 22
- 150000001343 alkyl silanes Chemical class 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 21
- 238000001035 drying Methods 0.000 claims 18
- 238000005229 chemical vapour deposition Methods 0.000 claims 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 15
- 229910052751 metal Inorganic materials 0.000 claims 15
- 239000002184 metal Substances 0.000 claims 15
- 229910000077 silane Inorganic materials 0.000 claims 15
- 238000010438 heat treatment Methods 0.000 claims 14
- 235000012239 silicon dioxide Nutrition 0.000 claims 14
- 239000000377 silicon dioxide Substances 0.000 claims 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 12
- 229910021529 ammonia Inorganic materials 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 125000004432 carbon atom Chemical group C* 0.000 claims 11
- 150000004756 silanes Chemical group 0.000 claims 11
- 239000000463 material Substances 0.000 claims 10
- 238000001704 evaporation Methods 0.000 claims 9
- 229910052739 hydrogen Inorganic materials 0.000 claims 9
- 239000001257 hydrogen Substances 0.000 claims 9
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical group C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 238000005524 ceramic coating Methods 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 6
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 claims 5
- 229920001296 polysiloxane Polymers 0.000 claims 5
- 239000012808 vapor phase Substances 0.000 claims 5
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 3
- 238000007865 diluting Methods 0.000 claims 3
- 150000002431 hydrogen Chemical class 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- -1 halo silanes Chemical class 0.000 claims 2
- 239000004447 silicone coating Substances 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1225—Deposition of multilayers of inorganic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
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Description
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Claims (29)
- (I)(A)수소 실세스퀴옥산 수지를 용매로 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 촉매화된 묽은 수소 실세스퀴옥산 수지 용액을 전자장치에 적용시킴으로써 전자 장치를 평면화(planarizing) 피복물로 피복하고: (B)촉매화된 묽은 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 촉매화된 수소 실세스퀴옥산 수지 에비세라믹 피복물을 전자 장치상에 침착시키고: (C)피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 이산화 규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성시키고, (II)(i) 실리콘 질소-함유 피복물, (ii) 실리콘 탄소-함유 피복물, 및 (iii)실리콘 탄소 질소-함유 피복물중에서 선택된 수동화(planarizing)피복물을 세라믹 또는 세라믹-유사 평면화 피복물을 적용(여기에서, 실리콘 질소-함유 피복물은 (a)암모니아 존재하에 실란, 할로실란, 힐로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 중기 침착, (b)암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 중기 침착, 및(c) 실리콘 및 질소-함유 예비세라믹 중합체의 세라믹화중에서 선택된 방법으로, 전자장치의 평면화 피복물상에 적용시키고: 실리콘 탄소 질소-함유 피복물은 (1)헥사메틸디실아잔의 화학적 증기 침착, (2)헥사메틸아잔의 플라즈마-보강 화학적 증기 침착, (3)탄소수 1 내지 6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로 실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적증기 침착, 및(4) 탄소수 1 내지 6의 알칸 또는 알킬실란 존재하에 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착 중에서 선택된 방법으로, 전자 장치의 평면화 피복물상에 적용시키며: 실리콘 탄소- 함유 피복물은 (i) 탄소수 1 내지 6의 알칸 또는 알킬실란의 존재하에 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기 침착, 및 (ii)탄소수 1 내지 6의 알칸 또는 알킬실란의 존재하에 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착중에서 선택된 방법으로 침착시킨다)시켜 수동화 세라믹-유사 피복물을 생성 시키고: (Ⅲ)(i)실리콘 피복물, (ii) 실리콘 질소 함유 피복물, (iii)실리콘 질소, 함유 피복물 및 (Ⅳ)실리콘 탄소 질소-함유 피복물 중에서 선택된 실리콘-함유 피복물을 수동화 세라믹 또는 세라믹-유사 피복물에 적용 (여기에서, 실리콘 피복물은 (a)실란, 할로실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기, 및 (b)실란, 할로실란, 할로디실란, 할로포리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착, 및 (c)할로실란, 할로디실란, 할로풀리실란 또는 이의 혼합물의 금속-보조 화학적 증기 침착중에서 선택된 방법으로 수동화 피복상에 적용시키고; 실리콘 탄소-함유 피복물은 (1) 탄소수 1 내지 6의 알칼 또는 알킬실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의화학적 증기 침착, 및 (2)탄소수 1 내지 6의 알칸 또는 알킬실란의존재하에 알킬실란, 할로실란, 할로디실란 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착 중에서 선택된 방법으로 적용시키며: 실리콘 질소-함유 피복물은 (A)암모니아의 존재하에 실란, 할로실란 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기 침착, (B)암모니아의 존재하에 실란, 할로실란 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착 및 (C)실리콘 및 질소-함유 예비세라믹 중합체의 세라믹화중에서 선택된 방법으로 침착시키고; 실리콘 탄소 질소-함유 피복물은 (i) 헥사메틸디실아잔의 화학적 증기 침착, (II)헥사메틸디실아잔의 플라즈마-보강 화학적 증기침착, (III)탄소수 1 내지 6의 알칸 또는 알킬 실란의 조재하 및 추가로 암모니아의 존재하에 실란, 할로실란 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기 침착, 및 (iv)탄소수 1 내지 6의 알칸 또는 알킬실란의 존재하 및 추가로 암모니아의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착 중에서 선택된 방법으로 침착시킨다)시켜 실리콘-함유 피복물을 생성함으로써 다중층으 세라믹 또는 세라믹-유사 피복물을 전자장치상에 제공함을 특징으로 하여, 기질 상에 다중층의 세라믹 또는 세라믹-유사 피복믈을 형성시키는 방법.
- (I)(A)수소 실세스퀼옥산 수지를 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 촉매화한 후 촉매화된 묽은 수소 실세스 퀴옥산 수지 용액을 전자장치에 적용시킴으로써 전자 장치를 평면화피복물로 피복하고: (B)촉매화된 묽은 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 촉매화된 수소 실세스퀴옥산 수지 에비세라믹 피복물을 전자 장치상에 침착시키고: (C)피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 이산화 규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성시키고, (Ⅱ)(i)실리콘 질소-함유 피복물, (ii)실리콘 탄소-함유 피복물, 및 (iii) 실리콘 탄소 질소-함유 피복물중에서 선택된 수동화피복물을 세라믹 또는 세라믹-유사 평면화 피복물에 적용(여기에서, 실리콘 질소-함유 피복물은 (a)암모니아 존재하에 실란, 할로실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기 침착, (b)암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 폴리즈마-보강 화학적 증기 침착, 및 (c)실리콘 및 질소-함유 예비세라믹 중합체의 세라믹화중에서 선택된 방법으로, 전자장치의 평면화 피복물상에 적용시키고: 실리콘 탄소 질소-함유 피복물은 (1)헥사메틸디실아잔의 화학적 증기 침착, (2)헥사메틸아잔의 플라즈마-보강 화학적 증기 침착, (3) 탄소수 1 내지 6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로 실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적증기 침착, 및 (4) 탄소수 1 내지 6의 알칸 또는 알킬실란 존재하에 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착중에서 선택된 방법으로, 전자 장치의 평면화 피복물상에 적용시키며: 실리콘 탄소-함유 피복물은 (i)탄소수 1 내지 6의 알칸 또는 알킬실란의 존재하에 알킬실란, 할로실란 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증기 침착, 및 (ii)탄소수 1 내지 6의 알칸 또는 알킬실란의 존재하에 알킬실란, 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라즈마-보강 화학적 증기 침착중에서 선택된 방법으로 침착시킨다)시켜 수동화 세라믹 또는 세라믹-유사 피복물을 생성시킴을 이중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함을 특징으로 하여, 기질상에 이중상의 세라믹 또는 세라믹-유사 피복물을 형성시키는 방법.
- (A) 수소 실세스퀴옥산 수지를 용매로 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매중에서 선택된 금속 촉매로 촉매화한후 촉매화된 묽은 수소 실세스퀴옥산 수지 용액을 전자장치에 적용시킴으로써 전자 장치를 평면화피복물로 피복하고: (B)촉매화된 묽은 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 전자 장치상에 침착시키고: (C)피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스 퀴옥산 수지 예비세라믹 피복물을 이산화 규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성킴으로써 단일층의 세라믹 또는 세라믹-유사 평면화피복물을 전자 장치상에 제공함을 특징으로 하여, 기질상에 단일층의 세라믹 또는 세라믹-유사 피복물을 형성시키는 방법.
- (A) 수소 실세스퀴옥산 수지를 용매로 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매중에서 선택된 금속 촉매로 촉매화한후 전자 장치를 상기의 촉매화된 묽은 수소 실세스퀴옥산수지 용액을 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 이산화 규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성시키고: (B)세라믹 피복된 장치의 존재하에 200 내지 600℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형서시키는 방법.
- 수소 실세스퀴옥산 수지 예비세라믹 물질을 용매로 휘석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액을 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비 세라믹 수소실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고; (B)세라믹 또는 세라믹 유사물-피복된 장치의 존재하에 150 내지 1000℃ 에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물, 및 암모니아를 반응 챔버내에서 분해하는 수단을 사용하여 실리콘 질소-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특지으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형서시키는 방법.
- 수소 실세스퀴옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산수지 용액으로 피복함으로써 전자 장치를 피복하고, 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B)세라믹 또는 세라믹 유사물 피복된 장치의 존재하에 150 내지 1000℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물, 및 탄소수 1 내지 6의 알칸 또는 세라믹-유사물피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치상에 제공함을 특징으로 하여, 기질상에 다중층의 세라믹 또는 세라믹-유사 피복물을 셩성시키는 방법.
- 수소 실세스퀴옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B)세라믹 또는 세라믹 유사물-피복된 장치의 존재하에 150 내지 100℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물, 및 탄소수 1 내지 6의 알칸 또는 세라믹-유사물피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치상에 제공함을 특징으로 하여, 기질상에 다중층의 세라믹 또는 세라믹-유사 피복물을 셩성시키는 방법.
- 제1항의 방법으로 제조된 피복물.
- 제2항의 방법으로 제조된 피복물.
- 제3항의 방법으로 제조된 피복물.
- 제4항의 방법으로 제조된 피복물.
- 제5항의 방법으로 제조된 피복물.
- 제6항의 방법으로 제조된 피복물.
- 제7항의 방법으로 제조된 피복물.
- 제1항의 방법으로 피복된 전자 장치.
- 제2항의 방법으로 피복된 전자 장치.
- 제3항의 방법으로 피복된 전자 장치.
- 제4항의 방법으로 피복된 전자 장치.
- 제5항의 방법으로 피복된 전자 장치.
- 제6항의 방법으로 피복된 전자 장치.
- 제7항의 방법으로 피복된 전자 장치.
- (A)수소 실세스퀴옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B)예비세라믹 실리콘 질소-함유 중합체를 용매에 희석시키고, 희석된 예비 실리콘 질소-함유 중합체 용액으로 세라믹 또는 세라믹-유사물-피복된 장치를 피복하고, 희석된 예비세라믹 실리콘 질소-함유 중합체 용액을 건조시킴으로써 용매를 증발시켜 예세라믹 실리콘 질소함유 피복물을 생성시킴으로써 전자장치상의 세라믹 또는 세라믹-유사 피복물에 적용시키고; (C)세라믹 또는 세라믹-유사물-피복된 장치의 존재하에 200 내지 600℃ 에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형성시키는 방법.
- (A)수소 실세스퀴옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한후 전자 장치를 상기의 촉매화된 묽은 예비세라믹 수소 실세스퀴옥산수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비 세라믹 수소 실세스 퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B) 예비세라믹 실리콘 질소-함유 중합체를 용매에 희석시키고, 희석된 예비 실리콘 질소-함유 중합체 용액으로 세라믹 또는 세라믹-유사물-피복된 장치를 피복하고, 희석된 예비세라믹 실리콘 질소-함유 중합체 용액을 건조시킴으로써 용매를 증발시켜 예세라믹 실리콘 질소함유 피복물을 생성시킴으로써 전자장치상의 세라믹 또는 세라믹-유사 피복물에 적용시키고; (C)세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사피복물을 형서시키는 방법.
- (A)수소 실세스퀼옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B)예비세라믹 실리콘 질소-함유 중합체를 용매에 희석시키고, 희석된 예비 실리콘 질소-함유 중합체 용액으로 세라믹 또는 세라믹-유사물-피복된 장치를 피복하고, 희석된 예비세라믹 실리콘 질소-함유 중합체 용액을 건조시킴으로써 용매를 증발시켜 예세라믹 실리콘 질소함유 피복물을 생성시킴으로써 전자장치상의 세라믹 또는 세라믹-유사 피복물에 적용시키고; (C)세라믹 또는 세라믹-유사물-피복된 장치의 존재하에 200 내지 600℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형서시키는 방법.
- (A)수소 실세스퀼옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사-피복물을 생성시키고: (B)예비세라믹 실리콘 질소-함유 중합체를 용매에 희석시키고, 희석된 예비 실리콘 질소-함유 중합체 용액으로 세라믹 또는 세라믹-유사물-피복된 장치를 피복하고, 희석된 예비 실리콘 질소-함유 중합체 용액을 건조시킴으로써 용매를 증발시켜 예세라믹 실리콘 질소함유 피복물을 생성시킴으로써 전자장치상의 세라믹 또는 세라믹-유사 피복물에 적용시키고; (C)세라믹 또는 세라믹-유사물-피복된 장치의 존재하에 150 내지 1000℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형서시키는 방법.
- (A)수소 실세스퀼옥산 수지 예비세라믹 물질을 용매로 희석하고 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매 중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액으로 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지를 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 피복물을 생성시키고: (B) 예비세라믹 실리콘 질소-함유 중합체를 용매에 희석시키고, 희석된 예비 실리콘 질소-함유 중합체 용액으로 세라믹 또는 세라믹-유사물-피복된 장치를 피복하고, 희석된 예비세라믹 실리콘 질소-함유 중합체 용액을 건조시킴으로써 용매를 증발시켜 예세라믹 실리콘 질소함유 피복물을 생성시킴으로써 전자장치상의 세라믹 또는 세라믹-유사 피복물에 적용시키고; (C)세라믹 또는 세라믹-유사물-피복된 장치의 존재하에 150 내지 1000℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형성시키는 방법.
- (A)수소 실세스퀼옥산 수지를 용매로 희석된 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매중에서 선택된 금속 촉매로 촉매화한 후 전자 장치를 상기의 촉매화된 묽은 수소 실세스퀴옥산수지 용액을 피복함으로써 전자 장치를 피복물로 피복하고, 촉매화된 묽은 예비 세라믹 수소 실세스퀴옥산 수지 용액을 건조시킴으로써 용매를 증발시켜 전자 장치상에 예비세라믹 피복물을 침착시키고, 피복된 장치를 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 이산화 규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성시키고: (B)세라믹 피복된 장의존 존재하여 200 내지 600℃에서 증기상의 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물을 반응 챔버내에서 분해하는 수단을 사용하여 실리콘-함유 피복물을 세라믹 또는 세라믹-유사물-피복된 장치에 적용시킴으로써 다중층의 세라믹 또는 세라믹-유사 피복물을 전자 장치에 제공함으로 특징으로 하여, 기질상에 다중 층의 세라믹 또는 세라믹-유사 피복물을 형서시키는 방법.
- (1) 사이클리실아잔 또는 사이클로아잔의 혼합물을 할로디실란 및 할로실란중에서 선택된 실리콘-함유 물질과 반응시켜 제조한 실리콘 및 질소-함유 예비세라믹 중합체 용매로 희석시키고; (2) 희석된 예비세라믹 중합체 용매 용액으로 기질을 피복시키고; (3)희석된 예비세라믹 중합체 용매 용액을 공기 부재하 건조시킴으로써 용매를 증발시켜 예비세라믹 중합체 피보가물 기질상에 침착시키고; (4)피복된 기질을 공기부재하 가열하여 세라믹 또는 세라믹-유사물-피복된 기질을 생서시킴을 특징으로 하여, 기질을 세라믹-유사 실리콘 질소-함유물질로 피복하는 방법.
- (A)수소 실세스퀴옥산 수지를 용매로 희석하고 수소 실세스퀴옥산 수지 용액을 백금 촉매 및 로듐 촉매중에서 선택된 금속 촉매로 촉매한후 촉매화된 묽은 수소 실세스퀴옥산 수지용액을 기질에 적용시킴으로써, 기질을 평면화 피목물로 피복하고; (B)묽은 수소 실세스퀴옥산 수지용액을 건조시킴으로써 용매를 증발시켜 촉매화된 수소 실세스퀴옥산 수지 예비세라믹 피복물을 기질상 침착시키고; (C) 피복된 기질 150 내지 1000℃의 온도로 가열함으로써 촉매화된 수소 실세스퀴옥산 수지 예비 세라믹 피복물을 이산화규소로 세라믹화하여 세라믹 또는 세라믹-유사 평면화 피복물을 생성시킴을 특징으로 하여, 기질상에 단일층의 세라믹 또는 세라믹-유사 피복물을 형성시키는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US937,273 | 1986-12-03 | ||
US937273 | 1986-12-03 | ||
US06/937,273 US4822697A (en) | 1986-12-03 | 1986-12-03 | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
Publications (2)
Publication Number | Publication Date |
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KR880007406A true KR880007406A (ko) | 1988-08-27 |
KR940001624B1 KR940001624B1 (ko) | 1994-02-28 |
Family
ID=25469717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870013691A KR940001624B1 (ko) | 1986-12-03 | 1987-12-03 | 저온 형성 다중층 세라믹의 백금 및 로듐 촉매화 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4822697A (ko) |
EP (2) | EP0466205B1 (ko) |
JP (1) | JPH0642476B2 (ko) |
KR (1) | KR940001624B1 (ko) |
CA (1) | CA1339852C (ko) |
DE (2) | DE3787381T2 (ko) |
ES (1) | ES2005468A6 (ko) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128494A (en) * | 1985-04-26 | 1992-07-07 | Sri International | Hydridosiloxanes as precursors to ceramic products |
US4898907A (en) * | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4826733A (en) * | 1986-12-03 | 1989-05-02 | Dow Corning Corporation | Sin-containing coatings for electronic devices |
US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
US5008320A (en) * | 1986-12-04 | 1991-04-16 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US5336532A (en) * | 1989-02-21 | 1994-08-09 | Dow Corning Corporation | Low temperature process for the formation of ceramic coatings |
DE3906405A1 (de) * | 1989-03-01 | 1990-09-06 | Leybold Ag | Verfahren zur herstellung eines schichtwiderstands |
CA2027031A1 (en) * | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5380553A (en) * | 1990-12-24 | 1995-01-10 | Dow Corning Corporation | Reverse direction pyrolysis processing |
US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
US5339211A (en) * | 1991-05-02 | 1994-08-16 | Dow Corning Corporation | Variable capacitor |
US5300322A (en) * | 1992-03-10 | 1994-04-05 | Martin Marietta Energy Systems, Inc. | Molybdenum enhanced low-temperature deposition of crystalline silicon nitride |
US5567661A (en) * | 1993-08-26 | 1996-10-22 | Fujitsu Limited | Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound |
US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
US5635240A (en) * | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
US5661092A (en) * | 1995-09-01 | 1997-08-26 | The University Of Connecticut | Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
TW392288B (en) | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
JP3543669B2 (ja) | 1999-03-31 | 2004-07-14 | 信越化学工業株式会社 | 絶縁膜形成用塗布液及び絶縁膜の形成方法 |
KR100804873B1 (ko) * | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 sog 반사방지 코팅 |
US6440550B1 (en) * | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6572974B1 (en) | 1999-12-06 | 2003-06-03 | The Regents Of The University Of Michigan | Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins |
JP2001214127A (ja) | 2000-01-31 | 2001-08-07 | Dow Corning Toray Silicone Co Ltd | 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法 |
US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US7011868B2 (en) * | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
US6764958B1 (en) * | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6537733B2 (en) * | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
US6656837B2 (en) * | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
US20030194496A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Methods for depositing dielectric material |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7288205B2 (en) * | 2004-07-09 | 2007-10-30 | Applied Materials, Inc. | Hermetic low dielectric constant layer for barrier applications |
DE102005059303A1 (de) * | 2005-12-09 | 2007-06-21 | Basf Ag | Nanoporösen Polymerschaumstoffe aus Polykondensations-Reaktivharzen |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
JP4961371B2 (ja) * | 2008-02-29 | 2012-06-27 | 日立アプライアンス株式会社 | 空気調和機の熱源機 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4340619A (en) * | 1981-01-15 | 1982-07-20 | Dow Corning Corporation | Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom |
US4404153A (en) * | 1981-01-15 | 1983-09-13 | Dow Corning Corporation | Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom |
US4312970A (en) * | 1981-02-20 | 1982-01-26 | Dow Corning Corporation | Silazane polymers from {R'3 Si}2 NH and organochlorosilanes |
US4395460A (en) * | 1981-09-21 | 1983-07-26 | Dow Corning Corporation | Preparation of polysilazane polymers and the polymers therefrom |
JPS5866335A (ja) * | 1981-10-16 | 1983-04-20 | Fujitsu Ltd | 集積回路 |
US4397828A (en) * | 1981-11-16 | 1983-08-09 | Massachusetts Institute Of Technology | Stable liquid polymeric precursor to silicon nitride and process |
JPS60112683A (ja) * | 1983-11-22 | 1985-06-19 | 日本曹達株式会社 | セラミック基板の表面平滑化方法 |
US4540803A (en) * | 1983-11-28 | 1985-09-10 | Dow Corning Corporation | Hydrosilazane polymers from [R3 Si]2 NH and HSiCl3 |
US4543344A (en) * | 1983-11-28 | 1985-09-24 | Dow Corning Corporation | Silicon nitride-containing ceramic material prepared by pyrolysis of hydrosilazane polymers from (R3 Si)2 NH and HSiCl3 |
US4482669A (en) * | 1984-01-19 | 1984-11-13 | Massachusetts Institute Of Technology | Preceramic organosilazane polymers |
US4482689A (en) * | 1984-03-12 | 1984-11-13 | Dow Corning Corporation | Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom |
US4535007A (en) * | 1984-07-02 | 1985-08-13 | Dow Corning Corporation | Silicon nitride-containing ceramics |
-
1986
- 1986-12-03 US US06/937,273 patent/US4822697A/en not_active Expired - Fee Related
-
1987
- 1987-10-13 CA CA000549113A patent/CA1339852C/en not_active Expired - Fee Related
- 1987-10-22 DE DE91114980T patent/DE3787381T2/de not_active Expired - Fee Related
- 1987-10-22 EP EP91114980A patent/EP0466205B1/en not_active Expired - Lifetime
- 1987-10-22 DE DE8787309356T patent/DE3780416T2/de not_active Expired - Fee Related
- 1987-10-22 EP EP87309356A patent/EP0270229B1/en not_active Expired - Lifetime
- 1987-11-30 ES ES8703424A patent/ES2005468A6/es not_active Expired
- 1987-12-02 JP JP62303429A patent/JPH0642476B2/ja not_active Expired - Lifetime
- 1987-12-03 KR KR1019870013691A patent/KR940001624B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3787381D1 (de) | 1993-10-14 |
EP0270229A2 (en) | 1988-06-08 |
JPS63144524A (ja) | 1988-06-16 |
US4822697A (en) | 1989-04-18 |
ES2005468A6 (es) | 1989-03-01 |
KR940001624B1 (ko) | 1994-02-28 |
DE3780416T2 (de) | 1993-03-11 |
EP0466205A1 (en) | 1992-01-15 |
JPH0642476B2 (ja) | 1994-06-01 |
EP0466205B1 (en) | 1993-09-08 |
DE3787381T2 (de) | 1994-04-07 |
EP0270229B1 (en) | 1992-07-15 |
EP0270229A3 (en) | 1989-04-26 |
DE3780416D1 (de) | 1992-08-20 |
CA1339852C (en) | 1998-05-05 |
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