DE69606942T2 - Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik - Google Patents

Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik

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Publication number
DE69606942T2
DE69606942T2 DE69606942T DE69606942T DE69606942T2 DE 69606942 T2 DE69606942 T2 DE 69606942T2 DE 69606942 T DE69606942 T DE 69606942T DE 69606942 T DE69606942 T DE 69606942T DE 69606942 T2 DE69606942 T2 DE 69606942T2
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Germany
Prior art keywords
adhesives
electronics
ceramic polymers
ceramic
polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69606942T
Other languages
English (en)
Other versions
DE69606942D1 (de
Inventor
Clayton R Bearinger
Robert Charles Camilletti
Grish Chandra
Loren Andrew Haluska
Theresa Eileen Gentle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
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Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69606942D1 publication Critical patent/DE69606942D1/de
Application granted granted Critical
Publication of DE69606942T2 publication Critical patent/DE69606942T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
DE69606942T 1995-09-25 1996-08-27 Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik Expired - Fee Related DE69606942T2 (de)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10251317B4 (de) * 2001-12-04 2006-06-14 Infineon Technologies Ag Halbleiterchip

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6761975B1 (en) * 1999-12-23 2004-07-13 Honeywell International Inc. Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
US7405251B2 (en) * 2002-05-16 2008-07-29 Dow Corning Corporation Flame retardant compositions
AU2003250671A1 (en) * 2002-07-23 2004-02-09 Global Thermoelectric Inc. High temperature gas seals
KR100938376B1 (ko) * 2002-12-23 2010-01-22 에스케이케미칼주식회사 실리콘 중간체를 포함하는 플립 칩 본딩용 비도전성접착제 조성물
US6943058B2 (en) 2003-03-18 2005-09-13 Delphi Technologies, Inc. No-flow underfill process and material therefor
US7281688B1 (en) * 2006-04-27 2007-10-16 The Boeing Company Materials for self-transpiring hot skins for hypersonic vehicles or reusable space vehicles
DE102007034609A1 (de) * 2007-07-25 2009-01-29 Robert Bosch Gmbh Fügeverfahren sowie Verbund aus mindestens zwei Fügepartnern
DE102009000888B4 (de) * 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg Halbleiteranordnung
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
KR102353030B1 (ko) 2014-01-27 2022-01-19 코닝 인코포레이티드 얇은 시트와 캐리어의 제어된 결합을 위한 물품 및 방법
EP3129221A1 (de) 2014-04-09 2017-02-15 Corning Incorporated Vorrichtungsmodifizierter substratartikel und herstellungsverfahren
US11167532B2 (en) 2015-05-19 2021-11-09 Corning Incorporated Articles and methods for bonding sheets with carriers
US11905201B2 (en) 2015-06-26 2024-02-20 Corning Incorporated Methods and articles including a sheet and a carrier
CN109642143B (zh) 2016-07-22 2021-09-24 3M创新有限公司 作为陶瓷前体的硅氧烷基粘合剂层
CN109476964B (zh) * 2016-07-22 2022-04-26 3M创新有限公司 作为陶瓷前体的聚合物粘合剂层
TW202216444A (zh) 2016-08-30 2022-05-01 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI821867B (zh) 2016-08-31 2023-11-11 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
FR3060601B1 (fr) * 2016-12-20 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composition adhesive et son utilisation dans l'electronique
WO2019118660A1 (en) 2017-12-15 2019-06-20 Corning Incorporated Method for treating a substrate and method for making articles comprising bonded sheets
JP2022168729A (ja) 2021-04-26 2022-11-08 信越化学工業株式会社 ガラス質接着剤

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU714508A1 (ru) * 1977-12-06 1980-02-05 Предприятие П/Я В-8574 Токопровод ща композици
JPS54134744A (en) * 1978-04-11 1979-10-19 Toshiba Ceramics Co Heat resistant adhesive material
US4255316A (en) * 1979-04-26 1981-03-10 Dow Corning Corporation Ceramifiable silicone adhesives
JPS5767083A (en) * 1980-10-06 1982-04-23 Kurosaki Refractories Co Ceramic tube jointing structure and method
US4422891A (en) * 1981-06-16 1983-12-27 Dentsply Research & Development Corporation Vitrifiable adhesive process
JPS62233508A (ja) * 1986-03-31 1987-10-13 株式会社東芝 セラミツクス部材の連結構造体
US4808653A (en) * 1986-12-04 1989-02-28 Dow Corning Corporation Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US5073840A (en) * 1988-10-06 1991-12-17 Microlithics Corporation Circuit board with coated metal support structure and method for making same
US4943468A (en) * 1988-10-31 1990-07-24 Texas Instruments Incorporated Ceramic based substrate for electronic circuit system modules
US5336532A (en) * 1989-02-21 1994-08-09 Dow Corning Corporation Low temperature process for the formation of ceramic coatings
JPH03119087A (ja) * 1989-09-30 1991-05-21 Tonen Corp セラミックス及び／又は金属接着剤と用途
US5256487A (en) * 1989-12-08 1993-10-26 The B. F. Goodrich Company High char yield silazane derived preceramic polymers and cured compositions thereof
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5407504A (en) * 1993-11-18 1995-04-18 The United States Of America As Represented By The Secretary Of The Army Method for joining ceramic to ceramic or to carbon
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5601675A (en) * 1994-12-06 1997-02-11 International Business Machines Corporation Reworkable electronic apparatus having a fusible layer for adhesively attached components, and method therefor
US5616202A (en) * 1995-06-26 1997-04-01 Dow Corning Corporation Enhanced adhesion of H-resin derived silica to gold
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10251317B4 (de) * 2001-12-04 2006-06-14 Infineon Technologies Ag Halbleiterchip

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JPH09130065A (ja) 1997-05-16
DE69606942D1 (de) 2000-04-13
KR970015702A (ko) 1997-04-28
EP0764704A1 (de) 1997-03-26
TW344937B (en) 1998-11-11
US5904791A (en) 1999-05-18

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