KR970703443A - 집적 회로의 저온 플라즈마-증착 방법(Low temperature plasma-enhanced formation of integrated circuits) - Google Patents

집적 회로의 저온 플라즈마-증착 방법(Low temperature plasma-enhanced formation of integrated circuits) Download PDF

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KR970703443A
KR970703443A KR1019960706958A KR19960706958A KR970703443A KR 970703443 A KR970703443 A KR 970703443A KR 1019960706958 A KR1019960706958 A KR 1019960706958A KR 19960706958 A KR19960706958 A KR 19960706958A KR 970703443 A KR970703443 A KR 970703443A
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titanium
plasma
film
ammonia
substrate
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로버트 에프 포스터
조셉 터 힐만
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투그룰 야살
머티어리얼즈 리서치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 플라즈마 증착 화학적 기상 성장법을 이용하여, 많은 층(29)이 동일한 반응 장치내에서 저온에서 반도체 기판상에 용착될 수 있다. 티타늄 니트라이드 필름이 요구될 때, 티타늄 필름은 처음에 상기 기판 표면의 25㎜ 내에서 생성되는 플라즈마 증착 화학적 기상 성장법을 이용하여 용착되어 상기 표면에 걸쳐 균일한 플라즈마를 공급한다. 상기 용착된 필름은 또한 상기 기판(28) 표면의 25㎜ 내에서 발생된 암모니아의 플라즈마를 이용하여 암모니아 가열 냉각 처리될 수 있고, 상기 기판 표면의 25㎜ 내에서 티타늄 테트라콜로라이드와 암모니아의 플라즈마를 생성하여 티타늄 니트라이트의 플라즈마 증착 화학적 기상 용착을 수반한다. 이 때문에 필름을 용착시킬 수 있고 비교적 저온, 즉 800℃ 이하에서 어닐링할 수 있다. 티타늄이 실리콘 표면 상에 용착될 때, 티타늄 실리사이드가 접합점에 형성되고 상기 접합점은 그 다음에 본 발명의 플라즈마 증착 화학적 기상 용착을 이용하여 질화될 수 있고 티타늄 또는 티타늄 니트라이드로 코딩될 수 있다. 따라서, 상기 방법은 티타늄, 티타늄 니트라이드, 티타늄 실리사이드의 다중층을 동일한 반응장치(20)에서 상기 기판의 표면 상에 형성할 수 있다.

Description

집적 회로의 저온 플라즈마-증착 방법(Low temperature plasma-enhanced formation of integrated circuits)
[도면의 간단한 설명]
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 티타늄 니트라이드의 필름을 기판에 플라즈마 증착하는 방법에 있어서, 티타늄 4할로겐화물과 수소를 포함하는 개스 혼합물의 상기 기판의 약 25㎜ 내에서 제1플라즈마를 생성하여 상기 기판의 표면상에 티타늄층을 형성하는 단계와, 상기 티타늄층의 약 25㎜ 내에 암모니아와 질소를 포함하는 그룹으로부터 선택된 개스로부터 제2플라즈마를 형성함으로서 상기 티타늄층을 질화하는 단계와, 티타늄 니트라이드층을 형성하는 단계를 특징으로 하는 플라즈마 증착방법.
  2. 제1항에 있어서, 상기 기판 표면은 알루미늄인 것을 특징으로 하는 플라즈마 증착 방법.
  3. 제1항에 있어서, 상기 기판 표면은 티타늄인 것을 특징으로 하는 플라즈마 증착 방법.
  4. 제1항에 있어서, 티타늄 4할로겐화물과 암모니아와 질소를 포함하는 그룹으로부터 선택된 개스를 포함하는 제2개스 혼합물로부터 티타늄 니트라이의 상기 제1층의 25㎝내에서 플라즈마를 생성함으로써 상기 티타늄 니트라이드층상에 티타늄 니트라이드층을 침적하는 단계를 부가로 포함하는 것을 특징으로 하는 플라즈마 증착 방법.
  5. 제4항에 있어서, 상기 기판 표면은 알루미늄인 것을 특징으로 하는 플라즈마 증착 방법.
  6. 제4항에 있어서, 상기 기판 표면은 티타늄인 것을 특징으로 하는 플라즈마 증착 방법.
  7. 티타늄 니트라이드 필름을 티타늄 표면에 플라즈마 증착방법에 있어서, 티타늄 표면을 암모니아와 질소를 포함하는 그룹으로부터 선택된 개스로부터 생성되고 상기 티타늄 표면 25㎝내에서 생성되는 제1플라즈마에 노출하는 단계와, 상기 티타늄 표면의 25㎜ 내에서 티타늄 4할로겐화물과 암모니아와 질소를 포함하는 그룹으로부터 선택된 개스를 포함하는 개스 혼합물로부터 제2플라즈마를 형성하는 단계를 특징으로 하는 플라즈마 증착 방법.
  8. 제7에 있어서, 상기 제1개스 혼합물은 약 10% 이하의 티타늄 4할로겐화물을 포함하고 여기서 약 100 내지 500 옹그스트롬의 티타늄 니트라이드가 침전되며, 상기 개스 혼합물은 10% 내지 20%보다 더 큰 농도의 티타늄 4할로겐화물을 확립하도록 변화되는 것을 특징으로 하는 플라즈마 증착 방법.
  9. 실리콘 표면상에 티타늄 니트라이트 필름을 형성하는 방법에 있어서, 티타늄 4할로겐화물과 수소를 포함하는 제1개스 혼합물의 제1플라즈마를 형성하는 단계와(여기서 상기 제1플라즈마는 실리콘 표면의 25㎜ 내에서 생성되며, 따라서 티타늄 필름은 상기 실리콘 표면상으로 침적된다), 암모니아와 질소를 포함하는 그룹으로부터 선택되는 제2개스의 상기 침전된 필름의 25㎜ 내에서 생성되는 제2플라즈마를 생성함으로써 상기 침적된 필름을 니트라이딩하는 단계와, 티타늄 4할로겐화물과 암모니아와 질소를 포함하는 그룹으로부터 선택된 개스를 포함하는 제3개스 혼합물의 제3플라즈마를 생성하여 티타늄 니트라이드 필름을 상기 질화된 침적 필름상에 증착하는 단계를 포함하는 것을 특징으로 하는 플라즈마 증착 방법.
  10. 제9항에 있어서, 상기 티타늄 4할로겐화물은 티타늄 4할로겐화물인 것을 특징으로 하는 플라즈마 증착 방법.
  11. 제9항에 있어서, 상기 제2개스는 암모니아인 것을 특징으로 하는 플라즈마 증착 방법.
  12. 제9항에 있어서, 상기 제1, 및 제2 및 제3플라즈마는 각각 상기 표면의 20㎜ 내에서 생성되는 것을 특징으로 하는 플라즈마 증착 방법.
  13. 제9항에 있어서, 상기 제1, 제2 및 제3플라즈마는 상기 표면의 25㎜ 내에서 위치된 금속 샤웨헤드에서 라디오 주파수 포텐셜을 생성함으로써 생성되는 것을 특징으로 하는 플라즈마 증착 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960706958A 1994-06-03 1995-04-03 저온플라즈마를이용한직접회로제조방법 KR100355914B1 (ko)

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US08/253,978 US5975912A (en) 1994-06-03 1994-06-03 Low temperature plasma-enhanced formation of integrated circuits
US253,978 1994-06-03

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EP (1) EP0763146B1 (ko)
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AU (1) AU2238595A (ko)
CA (1) CA2191458A1 (ko)
DE (1) DE69506865T2 (ko)
TW (1) TW294827B (ko)
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