JP2003531490A - 窒化ケイ素フィルムを形成するための超薄オキシニトリドのuv前処理法 - Google Patents
窒化ケイ素フィルムを形成するための超薄オキシニトリドのuv前処理法Info
- Publication number
- JP2003531490A JP2003531490A JP2001577596A JP2001577596A JP2003531490A JP 2003531490 A JP2003531490 A JP 2003531490A JP 2001577596 A JP2001577596 A JP 2001577596A JP 2001577596 A JP2001577596 A JP 2001577596A JP 2003531490 A JP2003531490 A JP 2003531490A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- oxynitride layer
- semiconductor substrate
- oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000000460 chlorine Substances 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 45
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000005108 dry cleaning Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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Abstract
Description
きを最小化する方法に関する。本発明は、特に、化学的蒸着(CVD)技術でケ
イ素半導体基板上に窒化ケイ素フィルムを形成するために利用するのが有利であ
る。
が短いので、短いチャネルで得られる効果を維持しかつドレインの電流を最大化
するために、ゲートの絶縁厚さを減じなければならない。薄い二酸化ケイ素(S
iO2)のスケーリングの基本的な限界は、直接トンネル効果による、大きな漏
れ電流である。ゲート酸化物層はケイ素半導体基板を大体において純粋な酸素雰
囲気下に熱酸化することにより形成されるのが典型的である。しかし、超大規模
集積(ULSI)回路では、MOSFET中のこのようなゲート酸化物層が、不
所望な特性、例えば比較的高い欠陥密度および電荷トラップおよび比較的低い信
頼性およびホットキャリアー効果に対する低い耐性を示すことがある。
るために使用されてきた。1つの例は、半導体基板のin situドライ洗浄
とその後の短時間熱処理(RTP)を含む。in situドライ洗浄法は典型
的に以下の3つの工程から成る:(1)UVオゾンの適用(100Torr圧力
):(2)HF−メタノール蒸気の適用(100Torr);および(3)UV
−塩素の適用(10Torr)。UV−オゾンおよびUV−Cl2ドライ洗浄は
、それぞれ、基板表面から、有機物の残留および金属汚染を取り除き、その後の
所望のゲート絶縁層の付着に適した表面を製造する。HF−メタノール蒸気はU
V−オゾン処理中に形成される任意の表面酸化物を除く。基板表面が清浄になっ
たら、連続したRTP法を実施し、これは以下の工程から成る:(1)酸化窒素
(NO)を用いたオキシニトリド層の成長;(2)短時間熱化学蒸着(RTCV
D)法による窒化ケイ素(SiNx)層の付着;(3)アンモニア(NH3)環
境での基板とSiN層との短時間アニール;および(4)N2O環境での基板の
短時間アニール。
窒化物層の物理的厚さが25Å以下である場合に、不所望に大きい(すなわち、
ざらつきの二乗平均平方根(RMS)が約10Åから更に20Åまでである)。
公の調査書は、窒化ケイ素の物理的厚さが約20Åを越えないと、窒化物が核成
長して島状に合体することはないと記載している。H. ResingerおよびA. Spitze
r, "Electrical Breakdown Induced by Silicon Nitride Roughness in Thin Ox
ide-Nitride-Oxide Films" J. Appl. Phys. V. 79, p. 3028(1996); M. Copel e
t. al., "Nucleation of Chemical Vapor Deposited Silicon Nitride on Silic
on Dioxide" Appl. Phys. Lett., V. 74, p. 1830(1999);およびY. Hu. et. al.
,"An In-Situ Real Time Measurement of the Incubation Time for Si Nucleat
ion on SiO2 in a Rapid Thermal Process, "Appl. Phys. Lett., V. 66, p. 7
00(1995)を参照のこと。従って、核成長部が十分だと酸化層上に窒化ケイ素フィ
ルムの成長が起こるということは、薄い窒化物フィルムでは表面に不所望なざら
つきを生じ、不適当なゲート絶縁性を導くということである。
ーム(N+、H+またはHe+)を用いてオキシニトリド表面を前処理し、核成
長部を増加させる。Y. Hu, et al., "In-situ Surface Pretreatment Effect on
Nucleation and Film Structure of Polysilicon in a RTCVD System," 4th In
t'l Conf. Advanced Thermal Processing of Semiconductors, RTP '96, p. 128
(1996)。より最近では、幾つかの実験において、遠隔プラズマ酸化が超薄酸化物
インターフェースを改良し得ることが示された。Lucovsky, et. al., Appl. Phy
s. Lett. V. 74, p. 2005 (1999)参照。残念なことに、遠隔プラズマ酸化は特別
なプロセス装置を必要とし、操作が複雑である。より多くの核成長部を作り出し
て、薄層窒化ケイ素フィルムの表面のざらつきを抑えるの別の手段が模索されて
いる。
びCl2とN2との混合物を使用して半導体基板表面に形成された酸化物または
オキシニトリドフィルムを前処理し、CVDによるフッ化物付着のために、より
多くの核成長部を作り出す。この方法において、オキシニトリド層を半導体基板
上に形成した後(有利にはケイ素半導体基板)、オキシニトリド層をUV−励起
ガスで処理する。次いで、このような前処理の後、処理したオキシニトリド層上
に窒化ケイ素フィルムを付着させる。有利には、少なくとも約800℃の温度で
短時間熱処理することによりオキシニトリド層を形成する。有利には、化学蒸着
(CVD)法により、約700℃〜約850℃、最も有利には700℃〜800
℃の範囲の温度でかつ約1.5Torr〜約3Torrの範囲、および1:40
:50のSiH4:NH3:Ar気体流率で、オキシニトリド層上に窒化ケイ素
フィルムを付着させる。
ることが見出された。1つの例において、22.6Å厚さの窒化ケイ素層(物理
的厚さ)が未処理の酸化物上に付着される場合、表面のざらつきのRMSは9.
2Åであった。これに対して、22.5Å厚さの窒化ケイ素層(物理的厚さ)を
、UV−励起塩素ガスで前処理した酸化物層上に付着すると、表面のざらつきは
RMS2.1Åに減少した。この方法は従って付着される層の質を高めた。
長するために、半導体表面の製造に使用してもよい。核成長部密度を強化し、窒
化ケイ素処理が可能なオキシニトリド表面層を製造するために、窒化ケイ素付着
工程に先立って、本発明の前処理工程を実施する。
成するための公知の従来方法を図解した図である。ケイ素半導体基板12は、そ
の上にオキシニトリド層14が付着されており、これは半導体基板12を酸化窒
素(NO)雰囲気に曝露し、ケイ素表面を酸化することで典型的に実施される。
オキシニトリド厚を測定すると、最終ゲートスタックの偏光および電気的データ
の分析により、たいてい約6Åであった。その後、窒化ケイ素フィルム16を、
短時間熱化学蒸着(CVD)法により、オキシニトリド層上に付着する。オキシ
ニトリド層14を有する半導体基板12を、密封チャンバー中で、シラン(Si
H4)、アンモニア(NH3)およびアルゴン(Ar)から成る混合物へ、約1
.5Torrの圧力で曝露する。この圧力および気体環境で実施すると、基板は
約800℃まで加熱される。CVD法は、パルス(1秒)から数分まで継続して
よい。典型的な処理時間は5〜60秒である。オキシニトリド層上に形成された
窒化ケイ素フィルム16は約36Åより薄く約20Åまでの物理的厚さを有する
。ゲートスタックは、約26Åより薄く約16Åまでの同等の酸化ケイ素(Si
O2)厚さ(EOT)を有する。ゲート絶縁技術の先を見据えると、次世代UL
SIデバイスには、物理的厚さが20Å以下の非常に薄い窒化ケイ素フィルムが
必要とされる。
キシニトリド層上に窒化ケイ素フィルムを付着する前に実施する。同じ参照番号
は図1および2で同じ成分を表す。図2に示されるように、UV−励起ガス20
を半導体基板12上のオキシニトリド層14の表面へ適用する。この前処理工程
を介在させることにより、オキシニトリド層の表面条件が、窒化ケイ素フィルム
を付着する前に改善される。この方法により、窒化ケイ素フィルム16’の表面
のざらつきが減少し、その後の処理が改善される。この利点が図に示されており
、図2の窒化ケイ素フィルム16’の上表面の凹凸は、図1の窒化ケイ素フィル
ム16の凹凸よりも目立たなくなっている。
トリド層表面をUV−励起ガスで変性または調整する。好ましい形態において、
前処理はUV−励起Cl2またはN2、またはそれらの気体混合物を用いて実施
される。UV−励起塩素ガスが特に有利である。UV−励起ガスを得るのに、広
い波長(200〜1100nm)出力を示す外部キセノンランプからUV−線を
放射する。有利には、キセノンランプからのフォトンエネルギーが6.2〜1.1
eVであり、これは半導体基板の最大結合エネルギーよりも大きい、例えば:S
i−Si=3.1eV;Si−H=3.0eV;Si−Cl=3.9eV;Si−
N=4.0eV;Si−O=4.6eV。これらの結合はUV照射下に切断できる
が、そのイオン化ポテンシャルが10eVを大きく上回るのでイオン化されない
。
にUV−励起オゾンで任意にドライ洗浄し、次いで増加した酸化物を除くために
HF−メタノール蒸気処理し、次いで金属汚染を除くためにUV−励起塩素を使
用する; (2)半導体基板表面を酸化窒素雰囲気に約0.5〜100Torr、最も有利
には0.5〜100Torrの圧力で、800〜1000℃の温度で曝露し、オ
キシニトリド層を熱により成長させる; (3)オキシニトリド層をUV−励起ガスへ30秒から2分まで80〜160℃
の温度で約5Torr〜約20Torrの圧力で曝露することにより、オキシニ
トリド層をUV−励起ガス、例えばUV−励起塩素または窒素または混合物で前
処理する; (4)オキシニトリド層で被覆された半導体基板を1:20〜50:40〜60
、有利には1:40:50の比率の量のSiH4:NH3:Arの雰囲気中、7
00〜850℃の範囲の温度および約1.5〜約3Torrの範囲の圧力で、5
〜35秒、有利には20秒放置することから成る化学蒸着法を利用して、前処理
したオキシニトリド層上に窒化ケイ素フィルムを付着させる。
着させる前に前処理工程を実施した場合に、二乗平均平方根(RMS)を尺度と
する表面のざらつきが減少する。本発明の付加的な利点は、窒化ケイ素層の厚さ
が増加すれば表面のざらつきも増加するが、本発明の前処理工程なしに付着させ
た層が示すよりも少ない割合となることである。従って、厚い窒化ケイ素フィル
ムであっても(30Åを越える物理的厚さ)、表面条件の改善が期待される。こ
れにより、本発明は超薄窒化物フィルムを形成する際にその使用を制限されない
。
ない場合で、窒化ケイ素フィルムをオキシニトリド層上に付着して得られる実際
の表面形態を比較した図である。これらの図は、本発明の処理を実施して(図3
B)またはしないで(図3A)、その上に窒化ケイ素を付着させた実際の半導体
基板の典型的な原子間力顕微鏡(AFM)の図である。全ての処理工程は同一の
条件下に実施されるが、図3Bのサンプルは、オキシニトリド層上に窒化ケイ素
フィルムを成長させるための化学蒸着処理を行う前に、オキシニトリド層をUV
−励起塩素ガスで60秒前処理した。図3Aにおいて、半導体サンプルには23
.5Åの物理的厚さを有するニトリドフィルムが付着され、表面のざらつきはR
MS20Åであった。図3Aから分かるように、多くの高い凸部または不連続性
がニトリドフィルム表面上に現れ、表面がざらついていることを示している。こ
れに対して、図3Bでは、付着された窒化ケイ素フィルムは28.7Åの物理的
厚さを有し、表面のざらつきはRMS10Åであった。UV−励起塩素ガスによ
る前処理は、高い凸部および不連続性の少ない一様な窒化物層ならびにより滑ら
かなフィルム表面を提供する。
の結果を以下の表1に示す。
きである。RMSで表されるざらつきは、低圧(0.5Torr)でのNOオキ
シニトリル化およびUV−Cl2前処理後に付着させた窒化ケイ素(厚さ=22
.5Å)では2.10Åであったが、標準圧力(100Torr)でのNOオキシ
ニトリル化のみを実施した後に付着させた窒化物(フィルム厚さ22.6Å)で
は9.2Åであった。例UV−1と例S−1との比較。
ルムの総フィルム厚さに対するざらつきをプロットしたものである。オキシニト
リド層のUV−処理は、CVD−付着窒化物のざらつきを著しく低下させる。
しかしながら、本発明は様々な別の組合せ、修飾および環境を用いて実施でき、
ここに記載した本発明の概要の範囲内であれば変化または修飾することが可能で
ある。記載はここに開示した発明に限定するものではない。当業者に明かな別の
態様は請求した請求項の範囲に含まれるものである。
用する、従来法を示す図である。
を処理して、より多くの核成長部をもたらし、表面のざらつきを減じさせる、本
発明の方法を示す図である。
(図3B)およびしない(図3A)CVD−付着窒化ケイ素フィルムの表面を形
態学的に示す図である。
フである。
Claims (21)
- 【請求項1】 塩素および窒素ならびにその混合物から成る群より選択され
るUV励起ガスにより、半導体基板上に形成されたオキシニトリドの薄層を処理
し、処理したオキシニトリド層の上に窒化ケイ素のフィルムを付着させることか
ら成る、半導体基板の表面に窒化ケイ素フィルムを形成する方法。 - 【請求項2】 オキシニトリドの薄層が6Å〜10Åの物理的厚さを有する
ことを特徴とする、請求項1に記載の方法。 - 【請求項3】 UV励起ガスを5〜20Torrの圧力および80℃を上回
る温度で導入することを特徴とする、請求項1に記載の方法。 - 【請求項4】 オキシニトリド層を処理するために、UV励起ガスを、少な
くとも30秒適用することを特徴とする、請求項1に記載の方法。 - 【請求項5】 窒化ケイ素フィルムが30Å以下の物理的厚さを有すること
を特徴とする、請求項1に記載の方法。 - 【請求項6】 窒化ケイ素フィルムが20Å〜36Åの範囲の物理的厚さを
有することを特徴とする、請求項1に記載の方法。 - 【請求項7】 少なくとも800℃の温度での短時間熱処理により、ケイ素
半導体基板上にオキシニトリド層を形成することを特徴とする、請求項2に記載
の方法。 - 【請求項8】 700〜850℃の温度範囲で化学蒸着することにより窒化
ケイ素フィルムを付着することを特徴とする、請求項5に記載の方法。 - 【請求項9】 化学蒸着を、1.5〜3.0Torrの圧力で、1:40:5
0のSiH4:NH3:Ar気体流率により実施することを特徴とする、請求項
8に記載の方法。 - 【請求項10】 UV−励起ガスが塩素であることを特徴とする、請求項1
に記載の方法。 - 【請求項11】 処理したオキシニトリド層の上に窒化ケイ素のフィルムを
付着する前に、塩素、窒素およびそれらの混合物から成る群より選択されるUV
−励起ガスを用いて半導体基板上に形成されたオキシニトリド層を処理すること
から成る、半導体基板上に形成された窒化ケイ素フィルムの、二乗平均平方根(
RMS)で表される表面のざらつきを減じる方法。 - 【請求項12】 オキシニトリド層が6Å〜10Åの物理的厚さを有するこ
とを特徴とする、請求項11に記載の方法。 - 【請求項13】 UV励起ガスを5〜20Torrの圧力および80℃を上
回る温度で導入することを特徴とする、請求項11に記載の方法。 - 【請求項14】 オキシニトリド層を処理するためにUV励起ガスを少なく
とも30秒適用することを特徴とする、請求項11に記載の方法。 - 【請求項15】 窒化ケイ素フィルムが30Å以下の物理的厚さを有するこ
とを特徴とする、請求項11に記載の方法。 - 【請求項16】 窒化ケイ素フィルムが20〜36Åの物理的厚さを有する
ことを特徴とする、請求項15に記載の方法。 - 【請求項17】 二乗平均平方根で表される窒化ケイ素フィルムの表面のざ
らつきが5Åを下回ることを特徴とする、請求項11に記載の方法。 - 【請求項18】 少なくとも800℃の温度で、短時間熱処理により、ケイ
素の半導体基板上にオキシニトリド層を形成することを特徴とする、請求項11
に記載の方法。 - 【請求項19】 700〜850℃の範囲の温度で化学蒸着により、窒化ケ
イ素フィルムを付着させることを特徴とする、請求項11に記載の方法。 - 【請求項20】 化学蒸着を、1.5〜3.0Torrの圧力で、1:40:
50のSiH4:NH3:Ar気体流率により実施することを特徴とする、請求
項18に記載の方法。 - 【請求項21】 UV励起ガスが塩素であることを特徴とする、請求項11
に記載の方法。
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PCT/US2001/012286 WO2001080298A1 (en) | 2000-04-17 | 2001-04-17 | Uv pretreatment process for ultra-thin oxynitride for formation of silicon nitride films |
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KR100727698B1 (ko) | 2007-06-13 |
EP1275139B1 (en) | 2011-07-27 |
ATE518239T1 (de) | 2011-08-15 |
CN1331199C (zh) | 2007-08-08 |
CN1423834A (zh) | 2003-06-11 |
US6451713B1 (en) | 2002-09-17 |
EP1275139A1 (en) | 2003-01-15 |
JP4813737B2 (ja) | 2011-11-09 |
KR20030009436A (ko) | 2003-01-29 |
WO2001080298A1 (en) | 2001-10-25 |
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