CN1423834A - 用于生成四氮化三硅薄膜的超薄氧氮化物的uv预处理方法 - Google Patents

用于生成四氮化三硅薄膜的超薄氧氮化物的uv预处理方法 Download PDF

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CN1423834A
CN1423834A CN01808068A CN01808068A CN1423834A CN 1423834 A CN1423834 A CN 1423834A CN 01808068 A CN01808068 A CN 01808068A CN 01808068 A CN01808068 A CN 01808068A CN 1423834 A CN1423834 A CN 1423834A
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silicon nitride
nitride film
oxynitride layer
excited gas
oxynitride
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CN1331199C (zh
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S·-P·泰
S·利维
Y·Z·胡
J·盖尔皮
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Mattson Technology Inc
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Abstract

用UV－激发气体(如氯或氮)预处理于半导体底物上形成的氧氮化物或氧化物层,以改善层表面的状况和增加用于继后的四氮化三硅沉积的核化点的密度。这种预处理显示减少了较薄的四氮化三硅膜(物理厚度低于36,或甚至低于20)的均方根表面糙度,该四氮化三硅薄膜是用化学气相沉积法(CVD)沉积在氧氮化物层上的。

Description

用于生成四氮化三硅薄膜的 超薄氧氮化物的UV预处理方法
发明领域
本发明一般地涉及用于ULSI应用的超薄介电薄膜表面糙度减至最小的方法。这些方法在用于通过化学气相沉积(CVD)技术于硅半导体底物上形成四氮化三硅薄膜时具有特殊的优点。
发明背景
当金属氧化物半导体场效应晶体管(MOSFET)的沟道长度减小时，栅介电厚度必须减小，以保持可接受的短沟道效应并使漏极电流最大限度地增加。由于直接隧道效应，对于薄二氧化硅(SiO2)定标的根本限制是大漏电流。栅氧化物层一般由硅半导体底物在基本纯净的氧气氛中热氧化形成。然而在超大规模集成(ULSI)电路中，这种在MOSFET中的栅氧化物层可表现出不能令人满意的特点，如较高的缺陷密度和电荷捕集，以及较低的可靠性和对于热载体效应的低耐受力。各种就地多层栅叠层方法已用于改进栅介电特性。一个实例是就地干洗硅半导体底物，继之以迅速热加工(RTP)工序。这种就地干洗一般包含三个步骤：(1)利用UV-臭氧(100托压力)；(2)利用HF-甲醇蒸气(100托压力)；和(3)利用UV-氯(10托压力)。UV-臭氧和UV-Cl2干洗从底物表面分别除去有机残渣和金属污染物，以制备随后所需栅介电层沉积的表面。HF-甲醇蒸气除去在UV-臭氧处理期间形成的任何表面氧化物。底物表面清洗后，要经受一系列RTP过程，这些过程包括：(1)用一氧化氮(NO)产生氧氮化物层；(2)用快速热化学气相沉积(RTCVD)法沉积氮化硅(SiNx)层；(3)在氨(NH3)环境中使底物与SiN层迅速热退火；和(4)在N2O环境中使底物迅速热退火。
已经发现当氮化物层的物理厚度约25和以下时，沉积在二氧化硅层上的CVD四氮化三硅的表面糙度不合需要地高(即均方根(RMS)糙度约10和甚至直到20)。已出版的一些研究论文指出，在四氮化三硅薄膜的物理厚度超过约20之前，氮化物核化岛的聚结不发生。参见H.Resinger和Spitzer，“Electrical Breakdown Inducedby Silicon Nitride Roughness in Thin Oxide-Nitride-OxideFilms(因薄氧化物-氮化物-氧化物膜中四氮化三硅糙度引起的电击穿)”，J.Appl.Phys.，V.79，p.3028(1996)；M.Copel等，“Nucleationof Chemical Vapor Deposited Silicon Nitride on Silicon Dioxide(在二氧化硅上化学气相沉积的四氮化三硅的核化)”，Appl.Phys.Lett.，V.74，p.1830(1999)；和Y.Hu等，“An In-Situ Real TimeMeasurement of the Incubation Time for SiNucleation on SiO2in a Rapid Thermal Process(对于在快速热加工过程中于SiO2上Si核化的就地实时测量)”，Appl.Phys.Lett.，V.66，p.700(1995)。
因此，由于氧化物层上的四氮化三硅薄膜的生长看来取决于有足够的核化点，所以较薄的氮化物膜已有导致不能接受的栅介电特性的不能接受的表面糙度。
有人提出解决这一问题的方法是利用低能离子束(N+，H+或He+)预处理氧氮化物表面和增加核化点。Y.Hu等，“In-situ SurfacePretreatment Effect on Nucleat ion and Film Structure ofPolysilicon in a RTCVD System(用RTCVD体系对多硅(Polysilicon)的核化和表面结构的就地表面预处理的效果)”，4thInt’1 Conf.Advanc ed Thermal Processing of Semiconductors，RTP’96，p.128(1996)，近来，某些研究表明，遥控等离子氧化可改善超薄氧化物界面，参见Lucovsky等，Appl.Phys.Lett.，V.74，p.2005(1999)。遗憾的是，遥控等离子氧化需要特殊的加工设备而且用起来很复杂。其他产生更多核化点和减少薄的四氮化三硅膜表面糙度的方法正在探索中。
发明概述
在本发明中我们用UV-激发气体(优选氯(Cl2)，氮(N2)和Cl2与N2的混合物)预处理在半导体底物表面上形成的氧化物或氧氮化物膜，以产生用于CVD氮化物沉积的更多的核化点。在我们的方法中，在氧氮化物层于半导体底物(优选硅半导体底物)上形成后，用UV-激发气体处理氧氮化物层。然后，在这一预处理后，四氮化三硅薄膜沉积在处理过的氧氮化物层上，优选，用快速热加工法于温度至少约800℃形成氧氮化物层。优选，用化学气相沉积(CVD)法于温度范围约700℃至约850℃，最优选700℃至800℃，和在压力范围约1.5托至约3托，并用气流比1∶40∶50的SiH4∶NH3∶Ar将四氮化三硅薄膜沉积在氧氮化物层上。
我们发现，由于这种预处理四氮化三硅的表面糙度大大减小。在一个实例中，当22.6厚的四氮化三硅层(物理厚度)沉积于未处理的氧化物上时，表面糙度RMS为9.2。相比之下，当22.5厚的四氮化三硅层(物理厚度)沉积于已经用UV-激发的氯气预处理过的氧化物层上时，表面糙度减少至RMS 2.1。因此这一方法改进了被沉积层的质量。
UV-激发气体预步骤可用于制备接受一氧化氮处理的半导体表面，产生氧氮化物层。本发明的预处理步骤是在四氮化三硅沉积步骤之前进行，以增加核化点密度和制备用于四氮化三硅工艺的氧氮化物表面层。
附图的简要说明
图1是现有技术方法的图解表示，其中四氮化三硅薄膜直接施加于未经预处理步骤的氮氧化物层上；
图2是本发明方法的图解表示，其中用UV-激发气体处理氮氧化物层是在施加四氮化三硅薄膜之前，以便产生更多的核化点和减少表面糙度；
图3A和3B是表明CVD沉积的四氮化三硅薄膜的表面结构：图3B是用而图3A是未用UV-激发的氯气预处理氧氮化物层的；和
图4是用和未用UV预处理方法的薄膜糙度对比图解。
优选具体实施方案的详细说明
图1以图解形式描述了在半导体底物上的氧化物或氧氮化物层上形成四氮化三硅层的已知现有技术方法。硅半导体底物12上沉积一个氧氮化物层14，一般是通过把半导体底物12暴露于一氧化氮(NO)气氛以氧化硅表面。氧氮化物的厚度按最终栅叠层的椭圆偏光法和电的数据一般估算为约6。此后，利用快速热化学气相沉积(CVD)法将四氮化三硅薄膜16沉积在氧氮化物层上。将带有氧氮化物层14的半导体底物12暴露于硅烷(SiH4)，氨(NH3)和氩的混合物，是在密闭的室中，在压力约1.5托下。在保持该压力和在气态环境条件下，将物被加热至约800℃的温度。CVD加工可持续1秒直至数据分钟。典型的加工时间是5-60秒。在氧氮化物层上形成的四氮化三硅薄膜16的物理厚度约36一直到约20。这一栅叠层应有一个等效的二氧化硅(SiO2)厚度(EOT)，为约24直至约16。考虑到栅介电技术的进展，物理厚度为20和以下的极薄四氮化三硅膜在紧接着的ULSI装置的产生中是理想的。
图2以图解形式描述了本发明的方法。UV-激发气体预处理步骤在四氮化三硅薄膜沉积在氧氮化物层上之前进行。在图1和图2中相同的参照数字指的是相同的组分。如图2中所示，UV-激发气体20施加于半导体底物12上的氧氮化物层14的表面。由于插入这一预处理步骤，氧氮化物层的表面状况在四氮化三硅薄膜测定积之前被改善。用这种方法，四氮化三硅薄膜16’的表面糙度减小，导致进一步加工的改进。为说明这一优点，在示于图2中的四氮化三硅薄膜16’的上表面上的峰和谷不如示于图1的四氮化三硅薄膜16上的峰和谷明显。
按照本发明，在四氮化三硅薄膜沉积在氧氮化物上之前，用UV-激发气体改善或调节氧氮化物层表面。在优选的具体实施方案中预处理是用UV-激发的Cl2或N2或它们的混合物进行。UV-激发的氯气是特别优选的。为了得到UV-激发气体，UV辐射是由一个具有宽波长(200-1100nm)输出的外用氙灯发射。优选，来自氙灯的光子能量为6.2-1.1eV，它高于大多数半导体底物的键能，如Si-Si＝3.1eV；Si-H＝3.0eV；Si-Cl＝3.9eV；Si-N＝4.0eV；Si-O＝4.6eV。这些键在UV辐照下可被离解，但它们不能离子化，因为它们的电离电位远超过10eV。
优选的方法包括如下步骤：
(1)任选地干洗半导体底物表面，优选硅半导体底物，用UV-激发的臭氧除去有机残渣，随后用HF-甲醇蒸气处理，除去任何生成的氧化物，然后用UV-激发的氯气除去金属污染物；
(2)在压力约0.5-500托，最优选0.5-100托，于温度800℃-约1000℃将半导体底物表面暴露于一氧化氮气氛，致使热生成一个氧氮化物层；
(3)用UV-激发气体，如UV-激发的氯气或氮气或其混合物预处理该氧氮化物层，方法是在温度范围约80℃-160℃和在压力约5托-约20托下，将氧氮化物层暴露于UV-激发气体；和
(4)用化学气相沉积法将四氮化三硅薄膜沉积在预处理过的氧氮化物层上，其中在温度范围700℃-850℃，和在压力范围约1.5托-约3托用时5-35秒，优选20秒，将涂敷有氧氮化物层的半导体底物保持在SiH4∶NH3∶Ar气氛中，优选以数量比为1∶20-50∶40-60，更优选1∶40∶50。
用这种四氮化三硅沉积的方法，当预处理步骤包含在四氮化三硅薄膜沉积在氮氧化物上之前时，通过均方根(RMS)测量的表面糙度大大减小。作为本发明的附加优点，我们发现当四氮化三硅层的厚度增加时，表面糙度仍会增加，但增加的速度要比没有介入预处理步骤的沉积层所显示的速度小。因此即使在要用较厚的四氮化三硅薄膜(物理厚度大于30)时，表面状况的改进也是预料中的。因此，本发明并不只限于在形成超薄氮化物薄膜时使用。
图3A和3B比较了用和未用按照本发明所述UV-激发氯气预处理在四氮化三硅薄膜沉积于氧氮化物层上时所得到的真实表面结构。这两个图是根据有四氮化三硅薄膜沉积于其上的(图3B)，和没有(图3A)按本发明的加工过程的真实半导体底物的典型原子力显微术(AFM)视图略绘的。所有的加工步骤都是在相同的条件下进行，除图3B中的样品是在化学气相沉积加工之前进行氧氮化物层的UV-激发的氯气预处理60秒，在氧氮化物层上生成四氮化之硅薄膜以外。在图3A中，半导体样品有一个物理厚度为23.5的沉积氮化物薄膜，以及其表面糙度为RMS 20。如图3A中所示，许多升高的峰和不连续性出现在氮化物薄膜表面，指示一个粗糙的表面。相比之下，在图3B中沉积的四氮化三硅薄膜的物理厚度为28.7，和表面糙度为RMS 10。用UV-激发的氯气进行预处理，使得氮化物层更均匀，具有较少的升高的峰和不连续性，表面更光滑。
已经进行了一些将本发明的方法与已知方法比较的实验。这些实施例的结果示于下面表I中。
                                                                         表I
  实施例 氧氮化物在NO环境中产生           预沉积处理                  CVD SiNx沉积条件(Ar＝300sccm)     SE**   AFM***糙度
压力(Torr)/温度(℃)/时间(s) UV-Cl2UV-N2 压力(Torr)/温度(℃)/时间(s)     SiH4(sccm)     NH3(sccm)   温度(℃)    压力(Torr)     时间(sec.) 物理厚度SiNx()   RMS()
  UV-1 0.5T/800℃/0s UV-Cl2 10T/100℃/120s     10     403   800    1.5     25     22.5     2.1
  UV-2 0.5T/800℃/0s UV-N2 10T/100℃/120s     10     403   800    1.5     25     24.0     4.2
  UV-3 100T/800℃/10s UV-Cl2 10T/160℃/60s     10     400   800    1.5     25     28.7     10.3
  S-1 100T/800℃/10s 无 -     10     403   800    1.5     25     22.6     9.2
  S-2 100T/800℃/10s 无 -     10     400   800    1.5     25     23.5     20.0
  S-3 100T/800℃/10s 无 -     10     400   800    1.5     35     21.8     5.9
**分光椭圆光度法***原子力显微术测量
如在上述实施例中所表明的，核化岛的聚结应当发生在氮化物厚度较薄处。在低压(0.5托)NO氧氮化和UV-Cl2预处理后，沉积的四氮化三硅(厚度＝22.5)的RMS糙度为2.10，反之，在仅是标准(100托)氧氮化后沉积的氮化物(膜厚22.6)是9.2。比较实施例UV-1至实施例S-1。
图4图解显示表I中所报道的结果，标绘糙度对用CVD沉积的SiNx的薄膜总厚度图。该氧氮化物层的UV-处理明显减少了CVD沉积的氮化物糙度。
本发明的前述说明用图和实例阐明和描述了优选的具体实施方案。不过，应当懂得，本发明能够用于各种其他的组合物、变体和环境以及可在这里已经表达的本发明的概念和思想的范围内变化或改进。本发明并不想限制在这里所公开的本发明的形式。对于熟悉现有技术的人员是显而易见的。替代的具体实施方案应包括在附加的权利要求的范围内。

Claims (21)

1.一种在半导体底物表面上形成四氮化三硅薄膜的方法，其包括：
用选自氯气、氮气和它们的混合物的UV-激发气体处理在半导体底物上形成的氧氮化物薄层；和
将四氮化三硅薄膜沉积在处理过的氧氮化物层上。
2.权利要求1的方法，其中氧氮化物薄层的物理厚度为6-10。
3.权利要求1的方法，其中UV-激发气体是在压力5-20托和温度约80℃引入。
4.权利要求1的方法，其中用UV-激发气体处理氧氮化物层用时至少30秒。
5.权利要求1的方法，其中四氮化三硅薄膜的物理厚度为30或小于30。
6.权利要求1的方法，其中四氮化三硅薄膜的物理厚度范围为20-36。
7.权利要求2的方法，其中氧氮化物层是用快速热加工法于温度至少800℃在硅半导体底物上形成的。
8.权利要求5的方法，其中四氮化三硅薄膜是应用化学气相沉积法在温度范围700℃-850℃下沉积的。
9.权利要求8的方法，其中化学气相沉积是在1.5托至3托压力下进行，SiH4∶NH3∶Ar的气流比为1∶40∶50。
10.权利要求1的方法，其中UV-激发气体是氯。
11.一种减低于半导体底物上形成的四氮化三硅薄膜的均方根(RMS)表面糙度的方法，其包括：
用选自氯、氮和其混合物的UV-激发气体在四氮化三硅薄膜沉积于处理的氧氮化物层之前处理在半导体底物上形成的氧氮化物层。
12.权利要求11的方法，其中氧氮化物层的物理厚度为6-10。
13.权利要求11的方法，其中UV-激发气体在压力5-20托和温度约80℃下引入。
14.权利要求11的方法，其中用UV-激发气体处理氧氮化物层用时至少30秒。
15.权利要求11的方法，其中四氮化三硅薄膜的物理厚度为30或不到30。
16.权利要求15的方法，其中四氮化三硅薄膜的物理厚度为20-36。
17.权利要求11的方法，其中四氮化三硅薄膜的均方根表面糙度为少于5。
18.权利要求11的方法，其中氧氮化物层是利用快速热加工法于温度至少800℃在硅半导体底物上形成。
19.权利要求11的方法，其中用化学气相沉积法于温度范围700℃-850℃沉积四氮化三硅薄膜。
20.权利要求18的方法，其中化学气相沉积在压力1.5托-3.0托下进行，SiH4∶NH3∶Ar的气流比为1∶40∶50。
21.权利要求11的方法，其中UV-激发气体是氯。
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Publication number Priority date Publication date Assignee Title
CN100426474C (zh) * 2004-07-28 2008-10-15 东京毅力科创株式会社 半导体工艺的成膜方法和装置
CN101381861B (zh) * 2004-06-28 2011-04-13 东京毅力科创株式会社 成膜方法
US8110889B2 (en) 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US8138069B2 (en) 2009-04-24 2012-03-20 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group III depositions
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US8183132B2 (en) 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
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US8361892B2 (en) 2010-04-14 2013-01-29 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
US8491720B2 (en) 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design
CN117848972A (zh) * 2024-03-07 2024-04-09 宝鸡西工钛合金制品有限公司 一种钛合金阳极氧化前处理方法

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US6706643B2 (en) * 2002-01-08 2004-03-16 Mattson Technology, Inc. UV-enhanced oxy-nitridation of semiconductor substrates
US20040025787A1 (en) * 2002-04-19 2004-02-12 Selbrede Steven C. System for depositing a film onto a substrate using a low pressure gas precursor
US20040247787A1 (en) * 2002-04-19 2004-12-09 Mackie Neil M. Effluent pressure control for use in a processing system
US6642117B1 (en) * 2002-08-05 2003-11-04 Taiwan Semiconductor Manufacturing Co. Ltd Method for forming composite dielectric layer
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DE10345475B4 (de) * 2003-09-30 2008-04-17 Infineon Technologies Ag Nichtflüchtiger integrierter Halbleiterspeicher
DE102004015307A1 (de) * 2004-03-29 2005-10-20 Infineon Technologies Ag Verfahren zur Präparation der Oberfläche eines Halbleiterkörpers
US7501352B2 (en) * 2005-03-30 2009-03-10 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer
US20060228898A1 (en) * 2005-03-30 2006-10-12 Cory Wajda Method and system for forming a high-k dielectric layer
US7517814B2 (en) * 2005-03-30 2009-04-14 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
US20070065593A1 (en) * 2005-09-21 2007-03-22 Cory Wajda Multi-source method and system for forming an oxide layer
US20070066084A1 (en) * 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP4833878B2 (ja) * 2007-01-31 2011-12-07 東京エレクトロン株式会社 基板の処理方法及び基板処理装置
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
AU2010229841B2 (en) 2009-03-27 2013-10-03 3M Innovative Properties Company Hydrophilic polypropylene melt additives
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
KR20120023040A (ko) * 2009-04-29 2012-03-12 어플라이드 머티어리얼스, 인코포레이티드 ＨＶＰＥ에서 인-시튜 사전-ＧａＮ 증착 층을 형성하는 방법
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
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US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
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US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
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US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Ａｓｍ智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102657269B1 (ko) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
TWI751420B (zh) 2018-06-29 2022-01-01 荷蘭商Ａｓｍ知識產權私人控股有限公司 薄膜沉積方法
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
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Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
WO1987000346A1 (en) 1985-07-02 1987-01-15 Semiconductor Energy Laboratory Co., Ltd. Method of forming a thin film
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH04144278A (ja) * 1990-10-05 1992-05-18 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
JP3416320B2 (ja) * 1995-03-13 2003-06-16 富士通株式会社 半導体装置の製造方法
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
JPH11297689A (ja) * 1998-04-08 1999-10-29 Sony Corp シリコン絶縁膜の熱処理方法並びに半導体装置の製造方法
US6162687A (en) * 1998-08-19 2000-12-19 Advanced Micro Devices, Inc. Method of manufacturing semiconductor device having oxide-nitride gate insulating layer
US6121130A (en) * 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
US6326231B1 (en) * 1998-12-08 2001-12-04 Advanced Micro Devices, Inc. Use of silicon oxynitride ARC for metal layers
US6153504A (en) * 1999-08-16 2000-11-28 Advanced Micro Devices, Inc. Method of using a silicon oxynitride ARC for final metal layer

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101381861B (zh) * 2004-06-28 2011-04-13 东京毅力科创株式会社 成膜方法
CN100426474C (zh) * 2004-07-28 2008-10-15 东京毅力科创株式会社 半导体工艺的成膜方法和装置
CN101409233B (zh) * 2007-10-05 2012-03-21 应用材料公司 用于沉积ⅲ/ⅴ族化合物的方法
CN101831694B (zh) * 2007-10-05 2014-09-24 应用材料公司 用于沉积ⅲ/ⅴ族化合物的方法
US8491720B2 (en) 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US8183132B2 (en) 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8568529B2 (en) 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
US8138069B2 (en) 2009-04-24 2012-03-20 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group III depositions
US8110889B2 (en) 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US8361892B2 (en) 2010-04-14 2013-01-29 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
US10130958B2 (en) 2010-04-14 2018-11-20 Applied Materials, Inc. Showerhead assembly with gas injection distribution devices
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design
CN102737957A (zh) * 2011-03-30 2012-10-17 东京毅力科创株式会社 硅氧化物膜和硅氮化物膜的层叠方法、成膜装置
CN102737957B (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 硅氧化物膜和硅氮化物膜的层叠方法、成膜装置
CN117848972A (zh) * 2024-03-07 2024-04-09 宝鸡西工钛合金制品有限公司 一种钛合金阳极氧化前处理方法
CN117848972B (zh) * 2024-03-07 2024-05-10 宝鸡西工钛合金制品有限公司 一种钛合金阳极氧化前处理方法

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