DE60143541D1 - Verfahren zur ausbildung dielektrischer filme - Google Patents
Verfahren zur ausbildung dielektrischer filmeInfo
- Publication number
- DE60143541D1 DE60143541D1 DE60143541T DE60143541T DE60143541D1 DE 60143541 D1 DE60143541 D1 DE 60143541D1 DE 60143541 T DE60143541 T DE 60143541T DE 60143541 T DE60143541 T DE 60143541T DE 60143541 D1 DE60143541 D1 DE 60143541D1
- Authority
- DE
- Germany
- Prior art keywords
- formation
- substrate
- forming
- dielectric films
- silicate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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-
2001
- 2001-09-19 AT AT01975332T patent/ATE489726T1/de not_active IP Right Cessation
- 2001-09-19 CN CNB01815753XA patent/CN100342500C/zh not_active Expired - Fee Related
- 2001-09-19 EP EP01975332A patent/EP1340247B1/de not_active Expired - Lifetime
- 2001-09-19 JP JP2003533333A patent/JP2004523134A/ja not_active Ceased
- 2001-09-19 CN CNB200510004466XA patent/CN100442454C/zh not_active Expired - Fee Related
- 2001-09-19 KR KR1020037003901A patent/KR100848423B1/ko not_active IP Right Cessation
- 2001-09-19 WO PCT/US2001/029831 patent/WO2003030242A1/en active Search and Examination
- 2001-09-19 DE DE60143541T patent/DE60143541D1/de not_active Expired - Lifetime
- 2001-09-19 US US09/957,697 patent/US6638876B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1340247B1 (de) | 2010-11-24 |
US20020142624A1 (en) | 2002-10-03 |
KR20030063341A (ko) | 2003-07-28 |
CN100342500C (zh) | 2007-10-10 |
CN1638061A (zh) | 2005-07-13 |
ATE489726T1 (de) | 2010-12-15 |
KR100848423B1 (ko) | 2008-07-28 |
WO2003030242A1 (en) | 2003-04-10 |
EP1340247A1 (de) | 2003-09-03 |
CN100442454C (zh) | 2008-12-10 |
EP1340247A4 (de) | 2007-12-26 |
US6638876B2 (en) | 2003-10-28 |
JP2004523134A (ja) | 2004-07-29 |
CN1459126A (zh) | 2003-11-26 |
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