KR950034588A - 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치 - Google Patents

탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치 Download PDF

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KR950034588A
KR950034588A KR1019950005402A KR19950005402A KR950034588A KR 950034588 A KR950034588 A KR 950034588A KR 1019950005402 A KR1019950005402 A KR 1019950005402A KR 19950005402 A KR19950005402 A KR 19950005402A KR 950034588 A KR950034588 A KR 950034588A
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film
gas
high dielectric
tantalum
dielectric material
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KR1019950005402A
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도시아끼 하세가와
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오가 노리오
소니 가부시기가이샤
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Priority claimed from JP07250494A external-priority patent/JP3334323B2/ja
Priority claimed from JP07250594A external-priority patent/JP3319138B2/ja
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR950034588A publication Critical patent/KR950034588A/ko

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract

본 발명은 탄탈계 고유전체(高誘電體)재료 및 고유전체막의 형성방법 및 반도체장치에 관한 것으로서, 탄탈계 고유전체재료는 TaxOyNz의 형태를 가지고, x, y 및 z가 다음의 관계를 만족시키는 것을 특징으로 한다.
x + y + z = 1
0.1 ≤ z ≤ 0.625
0 ≤ y ≤ 0.6
단, x ≥ 0.4 y + 0.6 z
고유전체막의 형성방법은 CpmTa(N3)n(여기서, Cp는 시클로펜탄이고, m + n =5임) 또는 탄탈계 유기금속화합물을 원료로 하여 CVD(chemical vapor deposition)법으로 또는 질소를 함유하는 가스를 사용하여 플라즈마처리를 행하여 고유전체재료막을 성막한다.

Description

탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 질화실리콘막으로 이루어지는 용량절연막이 형성된 반도체장치의 모식적인 일부단면도.

Claims (11)

  1. TaxOyNz의 형태를 가지고, x, y 및 z가 다음의 관계를 만족시키는 것을 특징으로 하는 탄탈계 고유전체(高誘電體)재료.
    x + y + z = 1
    0.1 ≤ z ≤ 0.625
    0 ≤ y ≤ 0.6
    단, x ≥ 0.4 y + 0.6 z
  2. 기체를 배설하고, CpmTa(N3)n(여기서, Cp는 시클로펜탄이고, m + n = 5임)을 원료로 하여, TaxOyNz의 형태를 가지고, 그리고 x, y 및 z가 다음의 관계를 만족시키는 TaxOyNz막을 CVD(chemical vapor deposition)법으로 기체(基體)상에 성막하는 것을 특징으로 하는 TaxOyNz막의 형성방법.
    x + y + z = 1
    0.1 ≤ z ≤ 0.625
    0 ≤ y ≤ 0.6
    단, x ≥ 0.4 y + 0.6 z
  3. 기체를 배설하고, 탄탈계 유기금속화합물을 원료로 하여, TaxOyNz의 형태를 가지고, 그리고 x, y 및 z가 다음의 관계를 만족시키는 TaxOyNz막을 CVD법으로 기체상에 성막하는 것을 특징으로 하는 TaxOyNz막의 형성방법.
    x + y + z = 1
    0.1 ≤ z ≤ 0.625
    0 ≤ y ≤ 0.6
    단, x ≥ 0.4 y + 0.6 z
  4. 제3항에 있어서, 탄탈계 유기금속화합물은 Ta(OC2H5)5, Ta(OCH3)5,Ta(N(CH3)2)5, TaCl5, Ta(OC2H5)m(N(CH3)2)n(단, m + n = 5) 및 Ta(OCH3)m(N(CH3)2)n(단, m + n = 5)로 이루어지는 군으로 선정되는 것을 특징으로 하는 TaxOyNz막의 형성방법.
  5. 제3항에 있어서, 원료가스는 또한 질소를 함유하는 가스로 이루어지는 것을 특징으로 하는 TaxOyNz막의 형성방법.
  6. 제5항에 있어서, 질소를 함유하는 가스는 NH3가스 NH3+ O3가스 , NH3+ O3가스, N2O 가스, N2H2가스 및 질소가스로 이루어지는 군으로부터 선정되는 것을 특징으로 하는 TaxOyNz막의 형성방법.
  7. 기체를 배설하고, TaxOyNz의 형태를 가지고, 그리고 x, y 및 z가 다음의 관계를 만족시키는 탄탈을 함유하는 유전체막을 기체상에 성막하고, 질소를 함유하는 가스를 사용하여 유전체막에 플라즈마처리를 행하는 것을 특징으로 하는 TaxOyNz막의 형성방법.
    x + y + z = 1
    0.1 ≤ z ≤ 0.625
    0 ≤ y ≤ 0.6
    단, x ≥ 0.4 y + 0.6 z
  8. 제1항에 기재된 탄탈계 고유전체재료를 사용하는 것을 특징으로 하는 반도체장치.
  9. 제9항에 있어서, 탄탈계 고유전체재료는 커패시터용의 유전체막을 구성하는 것을 특징으로 하는 반도체장치.
  10. 제9항에 있어서, 탄탈계 고유전체재료는 커패시터용의 유전체막을 구성하는 것을 특징으로 하는 반도체 장치.
  11. 제9항에 있어서, 탄탈계 고유전체재료는 최소한 MOS트랜지스터용의 게이트유전체의 일부를 구성하는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950005402A 1994-03-17 1995-03-16 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치 KR950034588A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP07250494A JP3334323B2 (ja) 1994-03-17 1994-03-17 高誘電体膜の形成方法
JP07250594A JP3319138B2 (ja) 1994-03-17 1994-03-17 タンタルを含む高誘電体膜の形成方法
JP94/72505 1994-03-17
JP94/72504 1994-03-17

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KR100358065B1 (ko) * 1999-06-25 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법

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