KR970013217A - 반도체 소자의 텅스텐실리사이드층 형성방법 - Google Patents

반도체 소자의 텅스텐실리사이드층 형성방법 Download PDF

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Publication number
KR970013217A
KR970013217A KR1019950025924A KR19950025924A KR970013217A KR 970013217 A KR970013217 A KR 970013217A KR 1019950025924 A KR1019950025924 A KR 1019950025924A KR 19950025924 A KR19950025924 A KR 19950025924A KR 970013217 A KR970013217 A KR 970013217A
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KR
South Korea
Prior art keywords
tungsten silicide
semiconductor device
silicide layer
formation method
layer formation
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Application number
KR1019950025924A
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English (en)
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KR100342825B1 (ko
Inventor
정성희
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950025924A priority Critical patent/KR100342825B1/ko
Publication of KR970013217A publication Critical patent/KR970013217A/ko
Application granted granted Critical
Publication of KR100342825B1 publication Critical patent/KR100342825B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 텅스텐실리사이드층 형성방법에 관한 것으로, 후속 열처리과정에서 발생되는 텅스텐실리사이드층의 들뜸(Feeling) 현상을 방지하기 위하여 텅스텐리실리사이드(WSix) 증착 초기에 모노 사일렌(Mono Silane) 가스를 첨가시키므로써 막(Film)의 열적 안정성을 향상시킬 수 있도록 한 반도체 소자의 텅스텐실리사이드층 형성방법에 관한 것이다.

Description

반도체 소자의 텅스텐실리사이드층 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 반도체 소자의 텅스텐실리사이드층 형성방법을 설명하기 위한 소자의 단면도.

Claims (2)

  1. 반도체 소자의 텅스텐실리사이드층 형성방법에 있어서, 소정의 공정을 거쳐 폴리실리콘층이 형성된 실리콘기판을 소정 온도의 증착 반응로 내부로 로드하는 단계와, 상기 단계로부터 WF6 및 디클로 사일렌 가스의 반응을 이용하여 상기 폴리실리콘층상에 텅스텐실리사이드를 증착하되, 상기 WF6 및 디클로 사일렌 가스의 반응 초기에 상기 반응로 내부로 모노 사일렌 가스를 첨가시키는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 텅스텐실리사이드층 형성방법.
  2. 제1항에 있어서, 상기 반응로 내부의 온도는 500 내지 600℃인 것을 특징으로 하는 반도체 소자의 텅스텐실리사이드층 형성방법.
KR1019950025924A 1995-08-22 1995-08-22 반도체소자의텅스텐실리사이드층형성방법 KR100342825B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025924A KR100342825B1 (ko) 1995-08-22 1995-08-22 반도체소자의텅스텐실리사이드층형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025924A KR100342825B1 (ko) 1995-08-22 1995-08-22 반도체소자의텅스텐실리사이드층형성방법

Publications (2)

Publication Number Publication Date
KR970013217A true KR970013217A (ko) 1997-03-29
KR100342825B1 KR100342825B1 (ko) 2002-11-02

Family

ID=37488330

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950025924A KR100342825B1 (ko) 1995-08-22 1995-08-22 반도체소자의텅스텐실리사이드층형성방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020002912A (ko) * 2000-06-30 2002-01-10 박종섭 반도체 소자의 제조방법
KR100732295B1 (ko) * 2000-06-30 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990002649A (ko) * 1997-06-20 1999-01-15 김영환 반도체 소자의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458526A (ja) * 1990-06-28 1992-02-25 Kawasaki Steel Corp ポリサイド素子の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020002912A (ko) * 2000-06-30 2002-01-10 박종섭 반도체 소자의 제조방법
KR100732295B1 (ko) * 2000-06-30 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
KR100342825B1 (ko) 2002-11-02

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