KR930003242A - Mos 트랜지스터 및 그 제조방법 - Google Patents

Mos 트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR930003242A
KR930003242A KR1019910012284A KR910012284A KR930003242A KR 930003242 A KR930003242 A KR 930003242A KR 1019910012284 A KR1019910012284 A KR 1019910012284A KR 910012284 A KR910012284 A KR 910012284A KR 930003242 A KR930003242 A KR 930003242A
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South Korea
Prior art keywords
insulating layer
gate insulating
gate
mos transistor
manufacturing
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KR1019910012284A
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English (en)
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KR940005294B1 (ko
Inventor
김윤기
김병렬
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김광호
삼성전자 주식회사
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Priority to KR1019910012284A priority Critical patent/KR940005294B1/ko
Publication of KR930003242A publication Critical patent/KR930003242A/ko
Application granted granted Critical
Publication of KR940005294B1 publication Critical patent/KR940005294B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음.

Description

MOS 트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 이 발명에 따른 게이트 절연층 및 게이트 전극 형성 공정을 나타낸 일련의 공정 수순도이다.

Claims (4)

  1. 상기 반도체 기판을 저압 화학기상 증착방법으로 SiOxNy의 게이트 절연층을 형성하는 공정과, 연이어 게이트 폴리를 형성시키는 공정으로 이루어진 것을 특징으로 하는 트랜지스터 제조방법.
  2. 제1항에 있어서, 게이트절연층형성은 Si2H6, NH3, N2O 가스가 혼합된 가스로부터 형성됨을 특징으로 하는 MOS 트랜지스터 제조방법.
  3. 제2항에 있어서, 상기 게이트 절연층 형성시 Si2H6의 SiH4, 또는 DCS가스(SiH2Cl2)를사용하는 것을 특징으로 하는 MOS 트랜지스터 제조방법.
  4. 기판 내에 소오스/드레인 영역과 이 기판 위에 게이트 절연층과 이 위에 게이트 전극을 갖는 MOS 트랜지스터에 있어서, 상기 게이트 절연층은 SiOxNy로 된 막질이며 게이트 전극은 게이트 폴리 실리콘으로 형성되는 것을 특징으로 하는 MOS 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012284A 1991-07-18 1991-07-18 Mos 트랜지스터 및 그 제조방법 KR940005294B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910012284A KR940005294B1 (ko) 1991-07-18 1991-07-18 Mos 트랜지스터 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910012284A KR940005294B1 (ko) 1991-07-18 1991-07-18 Mos 트랜지스터 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR930003242A true KR930003242A (ko) 1993-02-24
KR940005294B1 KR940005294B1 (ko) 1994-06-15

Family

ID=19317447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012284A KR940005294B1 (ko) 1991-07-18 1991-07-18 Mos 트랜지스터 및 그 제조방법

Country Status (1)

Country Link
KR (1) KR940005294B1 (ko)

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Publication number Publication date
KR940005294B1 (ko) 1994-06-15

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