KR970063761A - 피막 제조 방법 - Google Patents

피막 제조 방법 Download PDF

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Publication number
KR970063761A
KR970063761A KR1019970005120A KR19970005120A KR970063761A KR 970063761 A KR970063761 A KR 970063761A KR 1019970005120 A KR1019970005120 A KR 1019970005120A KR 19970005120 A KR19970005120 A KR 19970005120A KR 970063761 A KR970063761 A KR 970063761A
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South Korea
Prior art keywords
insulating film
forming
film
semiconductor film
semiconductor
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KR1019970005120A
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KR100509660B1 (ko
Inventor
다쯔야 오호리
미치꼬 다케이
장홍영
히로시 구로키
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야마자끼 순베이
한도타이 에네루기 겐큐쇼 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

절연막 형성시, 게이트 절연막과 반도체 사이의 계면의 특성을 높이고 역치 전압을 제어하기 위하여, 절연막이 형성될 표면을 미리 활성화된 산소에 노출시킨 후, 절연막을 상기 표면상에 형성하고, 또는 박막 트랜지스터 제조 공정에서, 절연막을 모노실란, 일산화이질소 및, 산소등 원료로 형성한다.

Description

피막 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5(a)도 내지 제5(e)도는 본 발명의 제2실시예에 따른 피막 트랜지스터의 제조 공정을 나타내는 도면.
제6도는 본 발명의 제2실시예에 따른 RF(라디오 주파수) 파워에 대한 역치 전압을 나타내는 다이어그램.
제7도는 본 발명의 제1실시예에 따른 RF 파워에 대한 플랫 밴드 전압을 나타내는 다이어그램.

Claims (5)

  1. 절연막이 형성되는 표면을 활성화 산소에 노출시키는 단계와; 상기 표면상에 상기 절연막을 형성시키는 단계로 구성되는 것을 특징으로 하는 절연막 형성 방법.
  2. 반도체층을 활성화 산소에 노출시키는 단계와; 상기 반도체층에서 절연막을 형성시키는 단계로 구성되는 것을 특징으로 하는 박막 트랜지스터 제조 공정에서의 절연막 형성 방법.
  3. 절연막을 갖는 기판상에 반도체막을 형성시키는 단계와; 상기 반도체막을 결정화하는 단계와; 상기 반도체막을 고주파수에 의하여 활성화 산소에 노출시키는 단계와; 실란과 산화질소 같은 반응성 기체로 구성된 혼합물을 이용한 화학 중착법(CVD)에 의하여 상기 반도체막상에서 질화실리콘(SiON)을 포함하는 게이트 절연막을 형성시키는 단계로 구성되는 것을 특징으로 하는 반도체 장치 제조 방법.
  4. 절연막이 모노실란, 일산화이질소와, 산소등을 원료로 하여 제조되는 것을 특징으로 하는 박막 트랜지스터 제조 공정에서의 절연막 형성 방법.
  5. 절연면을 가지는 기판상에 반도체막을 형성시키는 단계와; 상기 반도체막을 열처리 혹은 레이저 투사에 의하여 결정화하는 단계와; 실란과 산화질소 같은 반응성 기체로 구성된 혼합물을 이용한 CVD 법에 의하여 상기 반도체막에서 질화실리콘을 포함하는 게이트 절연막을 형성시키는 단계로 구성되며, 상기 혼합물은 산소 기체를 더 포함하는 것을 특징으로 하는 반도체 장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970005120A 1996-02-20 1997-02-20 피막제조방법 KR100509660B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05833296A JP3606991B2 (ja) 1996-02-20 1996-02-20 被膜作製方法
JP96-58332 1996-02-20

Publications (2)

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KR970063761A true KR970063761A (ko) 1997-09-12
KR100509660B1 KR100509660B1 (ko) 2005-11-08

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US (1) US5972437A (ko)
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
CN100592523C (zh) * 1999-06-02 2010-02-24 株式会社半导体能源研究所 半导体器件及其制造方法
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4562835B2 (ja) 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5604087B2 (ja) * 2009-11-27 2014-10-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10121683B2 (en) 2015-08-26 2018-11-06 SCREEN Holdings Co., Ltd. Light-irradiation heat treatment method and heat treatment apparatus

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JPS6039649A (ja) * 1983-08-13 1985-03-01 Toshiba Corp ホトマスクの洗浄方法
JPH0617957B2 (ja) * 1985-05-15 1994-03-09 セイコー電子工業株式会社 液晶表示装置
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Publication number Publication date
JPH09232586A (ja) 1997-09-05
KR100509660B1 (ko) 2005-11-08
US5972437A (en) 1999-10-26
JP3606991B2 (ja) 2005-01-05

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