KR920010974A - 반도체장치 및 그의 제조방법 - Google Patents

반도체장치 및 그의 제조방법 Download PDF

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Publication number
KR920010974A
KR920010974A KR1019910018670A KR910018670A KR920010974A KR 920010974 A KR920010974 A KR 920010974A KR 1019910018670 A KR1019910018670 A KR 1019910018670A KR 910018670 A KR910018670 A KR 910018670A KR 920010974 A KR920010974 A KR 920010974A
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South Korea
Prior art keywords
semiconductor substrate
orientation
polycrystalline
layer
predetermined
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KR1019910018670A
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English (en)
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KR950006486B1 (ko
Inventor
가꼬 고나가와
도오루 고야마
겐지 히사부
가쓰히꼬 다무라
세나 나까무라
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920010974A publication Critical patent/KR920010974A/ko
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Publication of KR950006486B1 publication Critical patent/KR950006486B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

내용 없음

Description

반도체장치 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 의한 게이트전극을 구비한 P채널 MOS트랜지스터를 표시한 단면도, 제2도는 제1도에 표시한 게이트전극의 결정구조를 설명하기 위해서의 확대단면도, 제3A도 내지 제3D도는 제1도에 표시한 P채널 MOS트랜지스터의 제조프로세스를 설명하기 위해서의 단면도.

Claims (3)

  1. 제1도전형의 반도체기판의 상기 제1도전형의 반도체 기판상에 소정의 간격을 두고 형성되어 제2도전형을 가지는 1쌍의 불순물영역과 상기 1쌍의 불순물영역간의 상기 반도체기판상에 절연막을 끼워서 형성되어 그의 결정립의 결정방위가 소정의 방위에 갖추어진 다결정체층을 가지는 게이트전극을 구비하는 반도체장치.
  2. 반도체기판상에 그의 결정립의 결정방위가 소정의 방위에 갖추어지게 다결정체층을 형성하는 공정과 상기 다결정체층을 패터닝하는 공정과 상기 패터닝된 다결정체층을 마스크로서 상기 다결정체층의 결정방위에 대해 소정의 각도기울인 방향에 이온주입하는 것에 의해 상기 반도체 기판상에 불순물영역을 형성하는 공정을 구비하는 반도체장치의 제조방법.
  3. 다결정 실리콘층의 제조방법이고 하지로되는 기재상에 반응가스로서 시란계가스를 사용하여 분위기압력 0.1∼1.0Torr, 분위기온도 550℃∼620℃의 조건하에서 화학기상성장법에 의해 그의 결정립의 결정방위가 소정의 방위에 갖추어 지도록 다결정 실리콘층을 형성하는 다결정 실리콘층의 제조방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019910018670A 1990-11-19 1991-10-23 반도체장치 및 그의 제조방법 KR950006486B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2314542A JP2875380B2 (ja) 1990-11-19 1990-11-19 半導体装置およびその製造方法
JP90-314542 1990-11-19

Publications (2)

Publication Number Publication Date
KR920010974A true KR920010974A (ko) 1992-06-27
KR950006486B1 KR950006486B1 (ko) 1995-06-15

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Application Number Title Priority Date Filing Date
KR1019910018670A KR950006486B1 (ko) 1990-11-19 1991-10-23 반도체장치 및 그의 제조방법

Country Status (4)

Country Link
US (1) US5381032A (ko)
JP (1) JP2875380B2 (ko)
KR (1) KR950006486B1 (ko)
DE (1) DE4138057C2 (ko)

Families Citing this family (13)

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US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
KR960012585B1 (en) * 1993-06-25 1996-09-23 Samsung Electronics Co Ltd Transistor structure and the method for manufacturing the same
EP0643417A3 (en) * 1993-09-08 1995-10-04 At & T Corp Method for installing the door.
JP3599290B2 (ja) * 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
US6881611B1 (en) * 1996-07-12 2005-04-19 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device
KR100469516B1 (ko) * 1996-07-12 2005-02-02 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
JPH1041412A (ja) * 1996-07-18 1998-02-13 Toshiba Corp 半導体装置およびその製造方法
JP3090201B2 (ja) * 1997-06-04 2000-09-18 日本電気株式会社 多結晶シリコン膜及び半導体装置
US6476462B2 (en) * 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
JP3781666B2 (ja) * 2001-11-29 2006-05-31 エルピーダメモリ株式会社 ゲート電極の形成方法及びゲート電極構造
US9209298B2 (en) * 2013-03-08 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
US9768259B2 (en) 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

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JPS6132170A (ja) * 1984-07-23 1986-02-14 Ricoh Co Ltd 漢字部推定カナ漢字変換処理装置
JPS61174758A (ja) * 1985-01-30 1986-08-06 Mitsubishi Electric Corp 相補型半導体集積回路装置
JPS6276677A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
JPS62179766A (ja) * 1986-02-04 1987-08-06 Seiko Instr & Electronics Ltd Ｍｉｓトランジスタ−の製造方法
US4808555A (en) * 1986-07-10 1989-02-28 Motorola, Inc. Multiple step formation of conductive material layers
JPS6348865A (ja) * 1986-08-19 1988-03-01 Toshiba Corp 半導体装置
JPH0287575A (ja) * 1988-09-24 1990-03-28 Nec Corp Ｍｉｓ型半導体集積回路装置
JPH02140933A (ja) * 1988-11-21 1990-05-30 Hitachi Ltd 半導体装置およびその製造方法
JP2875379B2 (ja) * 1990-11-19 1999-03-31 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE4138057C2 (de) 1998-07-16
DE4138057A1 (de) 1992-05-21
KR950006486B1 (ko) 1995-06-15
US5381032A (en) 1995-01-10
JPH04188674A (ja) 1992-07-07
JP2875380B2 (ja) 1999-03-31

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