KR960034487A - 질화티탄박막의 제작방법 - Google Patents

질화티탄박막의 제작방법 Download PDF

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Publication number
KR960034487A
KR960034487A KR1019960002020A KR19960002020A KR960034487A KR 960034487 A KR960034487 A KR 960034487A KR 1019960002020 A KR1019960002020 A KR 1019960002020A KR 19960002020 A KR19960002020 A KR 19960002020A KR 960034487 A KR960034487 A KR 960034487A
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South Korea
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thin film
titanium nitride
tetrakis
raw material
nitride thin
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KR1019960002020A
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KR100187451B1 (ko
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히토시 진바
김서원
아츠시 세키구치
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니시하라 슌지
아네루바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 테트라키스디알킬아미노티탄을 사용한 질화티탄박막의 제작에 있어서, 애스펙트비가 큰 구멍에 대하여도 피복성이 양호하게 막형성되도록 한다.
반응용기(1) 내에 원료가스 도입계(4)에 의해 테트라키스디알킬아미노티탄의 원료가스를 도입한다. 홀더온도조절기구(31)에 의해 미리 가열된 기판(2)에 원료가스가 공급되면, 소정의 열화학반응이 생겨 질화티탄을 주성분으로 하는 박막이 제작된다. 반응용기91) 내의 압력은 배기계에 의해 제어되고, 0.1 내지 15파스칼 범위내의 소정치로 되도록 유지된다.

Description

질화티탄박막의 제작방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 원료가스인 기화된 테트라키스디알킬아미노티탄을 압력이 0.1 에서 15파스칼 범위내인 분위기중에서 열적으로 화학반응시켜서 기판의 표면상에 질화티탄을 주성분으로 하는 박막을 퇴적하는 질화티탄박막의 제작방법.
  2. 제1항에 있어서, 또하나의 가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
  3. 제2항에 있어서, 그 첨가가스는 암모니아가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
  4. 제3항에 있어서, 유량 15sccm으로 암모니아가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
  5. 제1항에 있어서, 원료인 테트라키스디알킬아미노티탄은 테트라키스디에틸아미노티탄, 테트라키스디메틸아미노티탄, 테트라키스디프로필아미노티탄, 테트라키디이소부틸아미노티탄, 또는 티트라키스디 tert-부틸아미노티탄인 것을 특징으로 하는 질화티탄박막의 제작방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960002020A 1995-03-28 1996-01-30 질화티탄박막의 제작방법 KR100187451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09616795A JP3563819B2 (ja) 1995-03-28 1995-03-28 窒化チタン薄膜の作製方法及びその方法に使用される薄膜作製装置
JP95-096167 1995-03-28

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KR960034487A true KR960034487A (ko) 1996-10-22
KR100187451B1 KR100187451B1 (ko) 1999-04-15

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US (1) US5672385A (ko)
JP (1) JP3563819B2 (ko)
KR (1) KR100187451B1 (ko)
TW (1) TW311276B (ko)

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US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US5981352A (en) * 1997-09-08 1999-11-09 Lsi Logic Corporation Consistent alignment mark profiles on semiconductor wafers using fine grain tungsten protective layer
US5966613A (en) * 1997-09-08 1999-10-12 Lsi Corporation Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective
US6179277B1 (en) * 1998-02-27 2001-01-30 Applied Materials, Inc. Liquid vaporizer systems and methods for their use
US6071562A (en) * 1998-05-07 2000-06-06 Lsi Logic Corporation Process for depositing titanium nitride films
US6177305B1 (en) 1998-12-17 2001-01-23 Lsi Logic Corporation Fabrication of metal-insulator-metal capacitive structures
JP2000328246A (ja) * 1999-03-17 2000-11-28 Anelva Corp 窒化チタン薄膜の作製方法及び作製装置
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
US6303480B1 (en) 1999-09-13 2001-10-16 Applied Materials, Inc. Silicon layer to improve plug filling by CVD
KR100709919B1 (ko) * 2000-08-11 2007-04-24 주성엔지니어링(주) ＴｉＮ 박막 형성장치 및 이를 이용한 ＭＯＣＶＤ-ＴｉＮ 박막 형성방법
JP2004273470A (ja) * 2000-10-31 2004-09-30 Tokyo Electron Ltd 多元系金属酸化薄膜成膜装置及び成膜方法
US6576538B2 (en) * 2001-08-30 2003-06-10 Micron Technology, Inc. Technique for high efficiency metalorganic chemical vapor deposition
KR20030025494A (ko) * 2001-09-21 2003-03-29 삼성전자주식회사 루테늄막과 금속층간의 콘택을 포함하는 반도체 장치 및그의 제조 방법
US6918960B2 (en) * 2001-11-28 2005-07-19 Micron Technology, Inc. CVD of PtRh with good adhesion and morphology
US7378744B2 (en) * 2004-05-10 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7067409B2 (en) * 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7629256B2 (en) 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

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US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
US5393565A (en) * 1992-06-08 1995-02-28 Fujitsu Limited Method for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitride
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
US5480684A (en) * 1994-09-01 1996-01-02 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds

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JP3563819B2 (ja) 2004-09-08
JPH08269720A (ja) 1996-10-15
KR100187451B1 (ko) 1999-04-15
US5672385A (en) 1997-09-30
TW311276B (ko) 1997-07-21

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