KR960034487A - 질화티탄박막의 제작방법 - Google Patents
질화티탄박막의 제작방법 Download PDFInfo
- Publication number
- KR960034487A KR960034487A KR1019960002020A KR19960002020A KR960034487A KR 960034487 A KR960034487 A KR 960034487A KR 1019960002020 A KR1019960002020 A KR 1019960002020A KR 19960002020 A KR19960002020 A KR 19960002020A KR 960034487 A KR960034487 A KR 960034487A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- titanium nitride
- tetrakis
- raw material
- nitride thin
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 테트라키스디알킬아미노티탄을 사용한 질화티탄박막의 제작에 있어서, 애스펙트비가 큰 구멍에 대하여도 피복성이 양호하게 막형성되도록 한다.
반응용기(1) 내에 원료가스 도입계(4)에 의해 테트라키스디알킬아미노티탄의 원료가스를 도입한다. 홀더온도조절기구(31)에 의해 미리 가열된 기판(2)에 원료가스가 공급되면, 소정의 열화학반응이 생겨 질화티탄을 주성분으로 하는 박막이 제작된다. 반응용기91) 내의 압력은 배기계에 의해 제어되고, 0.1 내지 15파스칼 범위내의 소정치로 되도록 유지된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 원료가스인 기화된 테트라키스디알킬아미노티탄을 압력이 0.1 에서 15파스칼 범위내인 분위기중에서 열적으로 화학반응시켜서 기판의 표면상에 질화티탄을 주성분으로 하는 박막을 퇴적하는 질화티탄박막의 제작방법.
- 제1항에 있어서, 또하나의 가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
- 제2항에 있어서, 그 첨가가스는 암모니아가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
- 제3항에 있어서, 유량 15sccm으로 암모니아가스를 그 원료가스에 첨가하는 것을 특징으로 하는 질화티탄박막의 제작방법.
- 제1항에 있어서, 원료인 테트라키스디알킬아미노티탄은 테트라키스디에틸아미노티탄, 테트라키스디메틸아미노티탄, 테트라키스디프로필아미노티탄, 테트라키디이소부틸아미노티탄, 또는 티트라키스디 tert-부틸아미노티탄인 것을 특징으로 하는 질화티탄박막의 제작방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09616795A JP3563819B2 (ja) | 1995-03-28 | 1995-03-28 | 窒化チタン薄膜の作製方法及びその方法に使用される薄膜作製装置 |
JP95-096167 | 1995-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960034487A true KR960034487A (ko) | 1996-10-22 |
KR100187451B1 KR100187451B1 (ko) | 1999-04-15 |
Family
ID=14157784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960002020A KR100187451B1 (ko) | 1995-03-28 | 1996-01-30 | 질화티탄박막의 제작방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5672385A (ko) |
JP (1) | JP3563819B2 (ko) |
KR (1) | KR100187451B1 (ko) |
TW (1) | TW311276B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6080446A (en) * | 1997-08-21 | 2000-06-27 | Anelva Corporation | Method of depositing titanium nitride thin film and CVD deposition apparatus |
US5981352A (en) * | 1997-09-08 | 1999-11-09 | Lsi Logic Corporation | Consistent alignment mark profiles on semiconductor wafers using fine grain tungsten protective layer |
US5966613A (en) * | 1997-09-08 | 1999-10-12 | Lsi Corporation | Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective |
US6179277B1 (en) * | 1998-02-27 | 2001-01-30 | Applied Materials, Inc. | Liquid vaporizer systems and methods for their use |
US6071562A (en) * | 1998-05-07 | 2000-06-06 | Lsi Logic Corporation | Process for depositing titanium nitride films |
US6177305B1 (en) | 1998-12-17 | 2001-01-23 | Lsi Logic Corporation | Fabrication of metal-insulator-metal capacitive structures |
JP2000328246A (ja) * | 1999-03-17 | 2000-11-28 | Anelva Corp | 窒化チタン薄膜の作製方法及び作製装置 |
US6468604B1 (en) | 1999-03-17 | 2002-10-22 | Anelva Corporation | Method for manufacturing a titanium nitride thin film |
US6303480B1 (en) | 1999-09-13 | 2001-10-16 | Applied Materials, Inc. | Silicon layer to improve plug filling by CVD |
KR100709919B1 (ko) * | 2000-08-11 | 2007-04-24 | 주성엔지니어링(주) | TiN 박막 형성장치 및 이를 이용한 MOCVD-TiN 박막 형성방법 |
JP2004273470A (ja) * | 2000-10-31 | 2004-09-30 | Tokyo Electron Ltd | 多元系金属酸化薄膜成膜装置及び成膜方法 |
US6576538B2 (en) * | 2001-08-30 | 2003-06-10 | Micron Technology, Inc. | Technique for high efficiency metalorganic chemical vapor deposition |
KR20030025494A (ko) * | 2001-09-21 | 2003-03-29 | 삼성전자주식회사 | 루테늄막과 금속층간의 콘택을 포함하는 반도체 장치 및그의 제조 방법 |
US6918960B2 (en) * | 2001-11-28 | 2005-07-19 | Micron Technology, Inc. | CVD of PtRh with good adhesion and morphology |
US7378744B2 (en) * | 2004-05-10 | 2008-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance |
US7067409B2 (en) * | 2004-05-10 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance |
US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7629256B2 (en) | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478780A (en) * | 1990-03-30 | 1995-12-26 | Siemens Aktiengesellschaft | Method and apparatus for producing conductive layers or structures for VLSI circuits |
US5393565A (en) * | 1992-06-08 | 1995-02-28 | Fujitsu Limited | Method for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitride |
US5399379A (en) * | 1993-04-14 | 1995-03-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity |
US5480684A (en) * | 1994-09-01 | 1996-01-02 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds |
-
1995
- 1995-03-28 JP JP09616795A patent/JP3563819B2/ja not_active Expired - Lifetime
- 1995-12-04 TW TW084112881A patent/TW311276B/zh not_active IP Right Cessation
-
1996
- 1996-01-30 KR KR1019960002020A patent/KR100187451B1/ko active IP Right Grant
- 1996-03-06 US US08/611,678 patent/US5672385A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3563819B2 (ja) | 2004-09-08 |
JPH08269720A (ja) | 1996-10-15 |
KR100187451B1 (ko) | 1999-04-15 |
US5672385A (en) | 1997-09-30 |
TW311276B (ko) | 1997-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960034487A (ko) | 질화티탄박막의 제작방법 | |
US5173327A (en) | LPCVD process for depositing titanium films for semiconductor devices | |
US5151296A (en) | Method for forming polycrystalline film by chemical vapor deposition process | |
TWI256422B (en) | Device and method for depositing crystalline layers on crystalline substances | |
KR900017107A (ko) | 선택적 화학기상성장법(化學氣相成長法, cvd법) 및 동법을 사용한 cvd장치 | |
ZA955235B (en) | Membrane pore size reduction and sealing of membrane defects by interfacial chemical vapor deposition with ozone and another gas phase reactant | |
CA2051554A1 (en) | Thin film deposition method | |
WO1992018438A1 (en) | Method of coating a substrate in a fluidized bed | |
HK1007575A1 (en) | Process for chemical vapor deposition of transition metal nitrides | |
TW369675B (en) | Plasma enhanced chemical vapor deposition of titanium nitride using ammonia | |
MY107107A (en) | Method for preparing vaporized reactants for chemical vapor deposition. | |
KR920702794A (ko) | 텅스텐 실리사이드 화학 기상 증착 | |
KR950703073A (ko) | 결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride) | |
WO2001066834A3 (en) | Chemical vapor deposition process for fabricating layered superlattice materials | |
KR970043358A (ko) | 화학증착에 의해 알킬산 디알킬알루미늄으로부터 산화 알루미늄막을 형성하는 방법 | |
TW326100B (en) | Method for forming salicides | |
KR940016465A (ko) | 액체원료의 공급방법 및 그 방법을 사용한 박막의 형성방법 | |
AU2002213471A1 (en) | Flame-treating process | |
KR930701638A (ko) | 다이어몬드류 피복부재 및 그 제조방법 | |
WO2002040752A3 (en) | Process for producing iii-v compound films by chemical deposition | |
KR960012311A (ko) | 박막형성방법 | |
KR940005833A (ko) | 금박막 기상성장법 | |
EP2317543A3 (en) | Gas for plasma reaction, process for producing the same and use | |
MY110288A (en) | Process for forming deposited film and process for preparing semiconductor device. | |
KR970006168A (ko) | 산소와 마그네슘이 일대일의 비로 들어 있는 마그네슘 유도체를 사용하여 산화 마그네슘을 기질 위에 피막하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131218 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20141205 Year of fee payment: 17 |