KR970043358A - 화학증착에 의해 알킬산 디알킬알루미늄으로부터 산화 알루미늄막을 형성하는 방법 - Google Patents

화학증착에 의해 알킬산 디알킬알루미늄으로부터 산화 알루미늄막을 형성하는 방법 Download PDF

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Publication number
KR970043358A
KR970043358A KR1019950046455A KR19950046455A KR970043358A KR 970043358 A KR970043358 A KR 970043358A KR 1019950046455 A KR1019950046455 A KR 1019950046455A KR 19950046455 A KR19950046455 A KR 19950046455A KR 970043358 A KR970043358 A KR 970043358A
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KR
South Korea
Prior art keywords
oxide film
vapor deposition
chemical vapor
aluminum
aluminum oxide
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Application number
KR1019950046455A
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English (en)
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KR0164984B1 (ko
Inventor
김윤수
고원용
구수진
Original Assignee
강박광
재단법인 한국화학연구소
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Publication date
Application filed by 강박광, 재단법인 한국화학연구소 filed Critical 강박광
Priority to KR1019950046455A priority Critical patent/KR0164984B1/ko
Priority to EP96940725A priority patent/EP0865514B1/en
Priority to US09/077,450 priority patent/US5922405A/en
Priority to DE69612997T priority patent/DE69612997T2/de
Priority to ES96940725T priority patent/ES2159057T3/es
Priority to AT96940725T priority patent/ATE201460T1/de
Priority to PCT/KR1996/000230 priority patent/WO1997020963A1/en
Priority to JP52117597A priority patent/JP3148249B2/ja
Publication of KR970043358A publication Critical patent/KR970043358A/ko
Application granted granted Critical
Publication of KR0164984B1 publication Critical patent/KR0164984B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

본 발명은 별도의 산소 공급물질을 사용하지 않고서 상온에서도 하기식의 알킬산디알킬알루미늄을 원료로 사용하여 화학증착에 의해 기질위에 산화알루미늄막을 형성하는 방법에 관한 것이다:
R1 2AlOR2
상기식에서 R1과 R2는 같거나 서로 다르며, 각각 C1-C10알킬이다.

Description

화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 하기식의 알킬산디알킬알루미늄을 기화시켜 화학증착에 의하여 기질위에 산화알루미늄막을 형성하는 방법:R1 2AlOR2상기식에서 R1과 R2는 같거나 서로 다르며, 각각 C1-C10알킬이다.
  2. 제1항에 있어서, 상기 알킬산디알킬알루미늄이 이소프로필산디메틸알루미늄, tert-부틸산디메틸알루미늄 또는 이소프로필산디에틸알루미늄인 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 기질이 규소 단결정인 것을 특징으로 하는 방법.
KR1019950046455A 1995-12-04 1995-12-04 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법 KR0164984B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019950046455A KR0164984B1 (ko) 1995-12-04 1995-12-04 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법
EP96940725A EP0865514B1 (en) 1995-12-04 1996-12-03 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide
US09/077,450 US5922405A (en) 1995-12-04 1996-12-03 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide
DE69612997T DE69612997T2 (de) 1995-12-04 1996-12-03 Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxid
ES96940725T ES2159057T3 (es) 1995-12-04 1996-12-03 Procedimiento para la preparacion de una pelicula de oxido de aluminio utilizando alcoxido de dialquilaluminio.
AT96940725T ATE201460T1 (de) 1995-12-04 1996-12-03 Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxid
PCT/KR1996/000230 WO1997020963A1 (en) 1995-12-04 1996-12-03 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide
JP52117597A JP3148249B2 (ja) 1995-12-04 1996-12-03 ジアルキルアルミニウムアルコキシドを用いた酸化アルミニウム膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046455A KR0164984B1 (ko) 1995-12-04 1995-12-04 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법

Publications (2)

Publication Number Publication Date
KR970043358A true KR970043358A (ko) 1997-07-26
KR0164984B1 KR0164984B1 (ko) 1999-01-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046455A KR0164984B1 (ko) 1995-12-04 1995-12-04 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법

Country Status (8)

Country Link
US (1) US5922405A (ko)
EP (1) EP0865514B1 (ko)
JP (1) JP3148249B2 (ko)
KR (1) KR0164984B1 (ko)
AT (1) ATE201460T1 (ko)
DE (1) DE69612997T2 (ko)
ES (1) ES2159057T3 (ko)
WO (1) WO1997020963A1 (ko)

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US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
KR100186949B1 (ko) * 1996-02-12 1999-05-15 재단법인 한국화학연구소 알킬알루미늄알킬산마그네슘과 그 제조 방법 및이를이용한알루민산마그네슘의합성
JP2001502381A (ja) * 1996-10-16 2001-02-20 ザ プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化アルミニウムの化学蒸着法
KR100254530B1 (ko) * 1997-08-12 2000-05-01 김충섭 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법
FI117942B (fi) * 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
JP4111756B2 (ja) 2002-06-20 2008-07-02 セントラル硝子株式会社 ３，３，３−トリフルオロ−２−ヒドロキシプロピオン酸およびその誘導体の製造方法
KR100480756B1 (ko) * 2002-08-02 2005-04-06 한국화학연구원 산화알루미늄 박막 제조 방법
US7160578B2 (en) 2004-03-10 2007-01-09 Pilkington North America Method for depositing aluminum oxide coatings on flat glass
CN100439293C (zh) * 2007-04-20 2008-12-03 江苏省陶瓷研究所有限公司 一种覆有纳米陶瓷过滤膜的多孔陶瓷过滤板及其制造方法
US9718249B2 (en) 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
KR102123996B1 (ko) * 2013-02-25 2020-06-17 삼성전자주식회사 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법
EP2778252A3 (en) 2013-03-15 2014-12-10 Apple Inc. Layered Coatings For Sapphire Structure
DE102013004558B4 (de) 2013-03-18 2018-04-05 Apple Inc. Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung
DE102013004559B4 (de) * 2013-03-18 2015-07-23 Apple Inc. Bruchstabile Saphirscheibe und Verfahren zu ihrer Herstellung
CN106086814A (zh) * 2016-06-17 2016-11-09 中山大学 一种玻璃面板镀膜层及其制备方法
RU2665498C1 (ru) * 2017-12-04 2018-08-30 Федеральное государственное бюджетное образовательное учреждение высшего образования Северо-Кавказский горно-металлургический институт (государственный технологический университет) (СКГМИ (ГТУ) Способ модификации фотонного кристалла на основе наноструктурированного пористого анодного оксида алюминия
US11269374B2 (en) 2019-09-11 2022-03-08 Apple Inc. Electronic device with a cover assembly having an adhesion layer
WO2023177696A1 (en) * 2022-03-16 2023-09-21 Entegris, Inc. Process for preparing dialkyl aluminum alkoxides

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Also Published As

Publication number Publication date
JPH11500789A (ja) 1999-01-19
DE69612997D1 (de) 2001-06-28
EP0865514B1 (en) 2001-05-23
EP0865514A1 (en) 1998-09-23
WO1997020963A1 (en) 1997-06-12
JP3148249B2 (ja) 2001-03-19
ES2159057T3 (es) 2001-09-16
US5922405A (en) 1999-07-13
DE69612997T2 (de) 2001-09-20
ATE201460T1 (de) 2001-06-15
KR0164984B1 (ko) 1999-01-15

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