DE69306783D1 - Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung - Google Patents

Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung

Info

Publication number
DE69306783D1
DE69306783D1 DE69306783T DE69306783T DE69306783D1 DE 69306783 D1 DE69306783 D1 DE 69306783D1 DE 69306783 T DE69306783 T DE 69306783T DE 69306783 T DE69306783 T DE 69306783T DE 69306783 D1 DE69306783 D1 DE 69306783D1
Authority
DE
Germany
Prior art keywords
reactor
production
gas phase
semiconductor devices
phase deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69306783T
Other languages
English (en)
Other versions
DE69306783T2 (de
Inventor
Robert Foster
Helen Rebenne
Rene Leblanc
Carl White
Rikhit Arora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25409628&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69306783(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of DE69306783D1 publication Critical patent/DE69306783D1/de
Application granted granted Critical
Publication of DE69306783T2 publication Critical patent/DE69306783T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
DE69306783T 1992-06-15 1993-06-11 Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung Expired - Fee Related DE69306783T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/898,560 US5273588A (en) 1992-06-15 1992-06-15 Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
PCT/US1993/005616 WO1993025724A1 (en) 1992-06-15 1993-06-11 Semiconductor wafer processing cvd reactor cleaning method and apparatus

Publications (2)

Publication Number Publication Date
DE69306783D1 true DE69306783D1 (de) 1997-01-30
DE69306783T2 DE69306783T2 (de) 1997-04-10

Family

ID=25409628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69306783T Expired - Fee Related DE69306783T2 (de) 1992-06-15 1993-06-11 Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung

Country Status (7)

Country Link
US (1) US5273588A (de)
EP (1) EP0644954B1 (de)
JP (1) JP3248912B2 (de)
AU (1) AU4633093A (de)
CA (1) CA2136861A1 (de)
DE (1) DE69306783T2 (de)
WO (1) WO1993025724A1 (de)

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
US5575856A (en) * 1994-05-11 1996-11-19 Sony Corporation Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5975912A (en) 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5562947A (en) * 1994-11-09 1996-10-08 Sony Corporation Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
RU2075135C1 (ru) * 1995-01-13 1997-03-10 Акционерное общество Научно-производственная фирма "А3" Установка для плазмоструйной обработки пластин
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
DE69629412T2 (de) * 1995-04-20 2004-06-24 Ebara Corp. Anlage zur Dampfabscheidung von Dünnschichten
JP3534940B2 (ja) 1995-04-20 2004-06-07 株式会社荏原製作所 薄膜気相成長装置
TW331652B (en) * 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
US5788484A (en) * 1995-06-29 1998-08-04 Despatch Industries Limited Partnership Rapid cycle treatment oven
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US6746565B1 (en) * 1995-08-17 2004-06-08 Semitool, Inc. Semiconductor processor with wafer face protection
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
US20040224501A1 (en) * 1996-05-22 2004-11-11 Yung-Tsun Lo Manufacturing method for making tungsten-plug in an intergrated circuit device without volcano phenomena
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US5806980A (en) * 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
JPH10340857A (ja) 1997-06-10 1998-12-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体製造装置
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
US5926737A (en) * 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
US6228176B1 (en) * 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US7396508B1 (en) * 2000-07-12 2008-07-08 Ventana Medical Systems, Inc. Automated molecular pathology apparatus having independent slide heaters
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6596086B1 (en) * 1998-04-28 2003-07-22 Shin-Etsu Handotai Co., Ltd. Apparatus for thin film growth
JP2000012463A (ja) * 1998-06-17 2000-01-14 Mitsubishi Electric Corp 成膜装置
US6289842B1 (en) 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6302057B1 (en) 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
GB2347686B (en) 1999-03-08 2003-06-11 Trikon Holdings Ltd Gas delivery system
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
JP2000323487A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
TW466576B (en) 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
US6485603B1 (en) * 1999-07-01 2002-11-26 Applied Materials, Inc. Method and apparatus for conserving energy within a process chamber
US6315833B1 (en) * 1999-07-01 2001-11-13 Applied Materials, Inc. Silicon carbide sleeve for substrate support assembly
KR100806097B1 (ko) * 1999-09-30 2008-02-21 램 리써치 코포레이션 예비 처리된 가스 분배판
US6265803B1 (en) * 1999-11-10 2001-07-24 Brooks Automation, Inc. Unlimited rotation vacuum isolation wire feedthrough
JP4419237B2 (ja) * 1999-12-22 2010-02-24 東京エレクトロン株式会社 成膜装置及び被処理体の処理方法
KR100640564B1 (ko) * 2000-01-17 2006-10-31 삼성전자주식회사 가스 분사 장치를 포함하는 반도체 소자 제조 장비
US6500266B1 (en) * 2000-01-18 2002-12-31 Applied Materials, Inc. Heater temperature uniformity qualification tool
EP1199378A4 (de) * 2000-03-27 2006-09-20 Mitsubishi Heavy Ind Ltd Verfahren und vorrichtung zur herstellung eines metallfilms
US6461435B1 (en) * 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6428847B1 (en) * 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US20040028810A1 (en) * 2000-10-16 2004-02-12 Primaxx, Inc. Chemical vapor deposition reactor and method for utilizing vapor vortex
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
DE10115394B4 (de) * 2001-03-29 2005-03-24 Christof Diener Maschinenbauteil und/oder verfahrenstechnische Anlage mit einem Hohlraum und Reinigungsverfahren hierfür
KR100433285B1 (ko) * 2001-07-18 2004-05-31 주성엔지니어링(주) 멀티 홀 앵글드 가스분사 시스템을 갖는 반도체소자제조장치
AT413162B (de) * 2001-09-26 2005-11-15 Sez Ag Ringförmige aufnahmevorrichtung für einen rotierenden träger zur aufnahme eines scheibenförmigen gegenstandes wie eines halbleiterwafers
KR100666764B1 (ko) * 2001-10-16 2007-01-09 동경 엘렉트론 주식회사 피처리체 승강기구 및 이를 사용한 처리장치
WO2003034477A1 (en) * 2001-10-18 2003-04-24 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
KR100455430B1 (ko) * 2002-03-29 2004-11-06 주식회사 엘지이아이 열교환기 표면처리장비의 냉각장치 및 그 제조방법
JP4847009B2 (ja) 2002-05-23 2011-12-28 ラム リサーチ コーポレーション 半導体処理プラズマ反応器用の多部品電極および多部品電極の一部を取り換える方法
JP4083512B2 (ja) * 2002-08-30 2008-04-30 東京エレクトロン株式会社 基板処理装置
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
JP2005082880A (ja) * 2003-09-11 2005-03-31 Shoka Kagi Kofun Yugenkoshi 有機ｅｌ発光装置の成膜設備
US7279049B2 (en) * 2004-02-05 2007-10-09 Applied Materials, Inc. Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
US20050212093A1 (en) * 2004-03-26 2005-09-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and apparatus for fabricating the same
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US7886689B2 (en) * 2004-09-29 2011-02-15 Sekisui Chemical Co., Ltd. Plasma processing apparatus
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
CN101151702B (zh) * 2005-04-05 2010-05-19 松下电器产业株式会社 用于等离子体处理设备的气体喷头盘
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US7691204B2 (en) * 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US7631898B2 (en) * 2006-01-25 2009-12-15 Chrysler Group Llc Power release and locking adjustable steering column apparatus and method
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US8911590B2 (en) * 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7662254B2 (en) * 2007-02-08 2010-02-16 Lam Research Corporation Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
US7575638B2 (en) * 2007-02-02 2009-08-18 Lam Research Corporation Apparatus for defining regions of process exclusion and process performance in a process chamber
US7938931B2 (en) * 2006-05-24 2011-05-10 Lam Research Corporation Edge electrodes with variable power
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US20080029977A1 (en) * 2006-08-03 2008-02-07 Prime View International Co., Ltd. Chuck for a photoresist spin coater
ATE532609T1 (de) * 2007-02-01 2011-11-15 Ibp Conex Ltd Einführ- und freigabewerkzeug für rohrverbindungsanordnung und verfahren zur verwendung solch eines werkzeugs
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080241377A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Vapor deposition system and method of operating
JP6097471B2 (ja) 2007-04-27 2017-03-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 環状のバッフル
US20080308036A1 (en) * 2007-06-15 2008-12-18 Hideki Ito Vapor-phase growth apparatus and vapor-phase growth method
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US7736441B2 (en) * 2007-10-09 2010-06-15 Lam Research Corporation Cleaning fixtures and methods of cleaning electrode assembly plenums
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
JP2010016225A (ja) * 2008-07-04 2010-01-21 Tokyo Electron Ltd 温度調節機構および温度調節機構を用いた半導体製造装置
US8287688B2 (en) 2008-07-31 2012-10-16 Tokyo Electron Limited Substrate support for high throughput chemical treatment system
US8323410B2 (en) * 2008-07-31 2012-12-04 Tokyo Electron Limited High throughput chemical treatment system and method of operating
US8303715B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput thermal treatment system and method of operating
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US8115140B2 (en) * 2008-07-31 2012-02-14 Tokyo Electron Limited Heater assembly for high throughput chemical treatment system
US8209833B2 (en) * 2008-11-07 2012-07-03 Tokyo Electron Limited Thermal processing system and method of using
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
JP5079726B2 (ja) * 2009-03-23 2012-11-21 株式会社ニューフレアテクノロジー 半導体製造方法および半導体製造装置
US8183132B2 (en) 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8491720B2 (en) 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
WO2010124261A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US9166139B2 (en) * 2009-05-14 2015-10-20 The Neothermal Energy Company Method for thermally cycling an object including a polarizable material
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8888919B2 (en) * 2010-03-03 2014-11-18 Veeco Instruments Inc. Wafer carrier with sloped edge
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US9312107B1 (en) * 2011-03-31 2016-04-12 WD Media, LLC Disk handling apparatus and method for supporting a disk during material deposition at a deposition station
EP2527309B1 (de) * 2011-05-24 2016-08-03 Rohm and Haas Company Multispektrales Zinksulfid mit verbesserter Qualität
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
KR101452828B1 (ko) * 2012-08-28 2014-10-23 주식회사 유진테크 기판처리장치
WO2014178160A1 (ja) * 2013-04-30 2014-11-06 東京エレクトロン株式会社 成膜装置
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
JP6368732B2 (ja) * 2016-03-29 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
CN116978818A (zh) * 2016-06-03 2023-10-31 应用材料公司 扩散腔室内部的气流的设计
US11011355B2 (en) * 2017-05-12 2021-05-18 Lam Research Corporation Temperature-tuned substrate support for substrate processing systems
US11149351B2 (en) * 2017-09-11 2021-10-19 Infineon Technologies Ag Apparatus and method for chemical vapor deposition process for semiconductor substrates
JP2022107873A (ja) * 2021-01-12 2022-07-25 東京エレクトロン株式会社 基板処理装置及びクリーニング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
NL8602357A (nl) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership Inrichting en werkwijze voor het chemisch uit damp neerslaan met gebruik van een axiaal symmetrische gasstroming.
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JP2618445B2 (ja) * 1987-06-26 1997-06-11 アプライド マテリアルズ インコーポレーテッド 反応器チャンバー自己清掃方法
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
DE69007733T2 (de) * 1989-05-08 1994-09-29 Philips Nv Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
DE69108285T2 (de) * 1990-04-23 1995-12-14 Genus Inc Peripherieabdichtung für Halbleiterplättchen durch Gasinjektion.

Also Published As

Publication number Publication date
AU4633093A (en) 1994-01-04
WO1993025724A1 (en) 1993-12-23
DE69306783T2 (de) 1997-04-10
US5273588A (en) 1993-12-28
EP0644954B1 (de) 1996-12-18
JPH07507844A (ja) 1995-08-31
CA2136861A1 (en) 1993-12-23
JP3248912B2 (ja) 2002-01-21
EP0644954A1 (de) 1995-03-29

Similar Documents

Publication Publication Date Title
DE69306783T2 (de) Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung
DE69325325D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69227170T2 (de) Verfahren zur Herstellung von Verbundhalbleitern des P-Typs
DK0583836T3 (da) Fremgangsmåde til fremstilling af carbonhydridbrændstoffer
DE69431385D1 (de) Verfahren zur Herstellung von Silizium-Halbleiterplättchen
DE69428444D1 (de) Herstellungsverfahren von schichtigen supergittermateralien durch chemische abscheidung aus der dampfphase
DE69310422T2 (de) Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern
DE69325764T2 (de) Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium
NO924951D0 (no) Fremgangsmaate for fremstilling av uorganiske membraner ved organometallisk, kjemisk dampavsetning
ITMI931903A0 (it) Processo per la sintesi di polveri ceramiche di composti di perovskite
DE69413910D1 (de) Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen
DE3672880D1 (de) Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase.
FI932395A (fi) Minskning av nedbrytning av polymersubstrat foerorsakad av ultraviolettstraolning
DE69413358D1 (de) Verfahren zur Herstellung von Siliciumcarbidpulver aus verdampfter Polysiloxanen
DE69012409D1 (de) Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.
DE69316344T2 (de) Prozess zur herstellung von oximen
NO850671L (no) Fremgangsmaate for omdannelse av teicoplanin faktor a2 komponent 3.
DE69320540D1 (de) Herstellungsverfahren von Verbindungshalbleitern
DE69317820D1 (de) Verfahren zur Herstellung hochreiner Monoalkylphosphine
DE69125203T2 (de) Zell-Bibliotheks-Verfahren zur Herstellung von integrierten Halbleiterschaltungen
FI101473B1 (fi) Menetelmä vetysiloksaanien valmistamiseksi
DE69119861T2 (de) Verfahren zur Herstellung von P-Typ-Verbindungshalbleitern
DE69327487T2 (de) Herstellungsverfahren von Verbindungshalbleitern
NO961008D0 (no) Fremgangsmåte for fremstilling av cykliske cis-1-amino-2-alkanoler
NO951421D0 (no) Fremgangsmåte til fremstilling av rent podofyllotoksin

Legal Events

Date Code Title Description
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee