DE69325764T2 - Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium - Google Patents

Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium

Info

Publication number
DE69325764T2
DE69325764T2 DE69325764T DE69325764T DE69325764T2 DE 69325764 T2 DE69325764 T2 DE 69325764T2 DE 69325764 T DE69325764 T DE 69325764T DE 69325764 T DE69325764 T DE 69325764T DE 69325764 T2 DE69325764 T2 DE 69325764T2
Authority
DE
Germany
Prior art keywords
columnar
granular
production
solar cell
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325764T
Other languages
English (en)
Other versions
DE69325764D1 (de
Inventor
Robert B Hall
Allen M Barnett
Jacob E Brown
Joseph C Checchi
David H Ford
Christopher L Kendall
William P Mulligan
James A Rand
Todd R Ruffins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Astropower Inc
Original Assignee
Astropower Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Astropower Inc filed Critical Astropower Inc
Application granted granted Critical
Publication of DE69325764D1 publication Critical patent/DE69325764D1/de
Publication of DE69325764T2 publication Critical patent/DE69325764T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69325764T 1992-10-09 1993-10-06 Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium Expired - Fee Related DE69325764T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/959,009 US5336335A (en) 1992-10-09 1992-10-09 Columnar-grained polycrystalline solar cell and process of manufacture

Publications (2)

Publication Number Publication Date
DE69325764D1 DE69325764D1 (de) 1999-09-02
DE69325764T2 true DE69325764T2 (de) 2000-03-02

Family

ID=25501555

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69325764T Expired - Fee Related DE69325764T2 (de) 1992-10-09 1993-10-06 Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium
DE69334310T Expired - Lifetime DE69334310D1 (de) 1992-10-09 1993-10-06 Verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69334310T Expired - Lifetime DE69334310D1 (de) 1992-10-09 1993-10-06 Verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium

Country Status (7)

Country Link
US (2) US5336335A (de)
EP (2) EP0911885B1 (de)
JP (1) JP2619207B2 (de)
AU (1) AU667130B2 (de)
CA (1) CA2107975C (de)
DE (2) DE69325764T2 (de)
ES (1) ES2134818T3 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049303A1 (de) * 2008-09-29 2010-04-01 Qimonda Ag Verfahren zur Herstellung eines Silizium-Wafers für Solarzellen

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336335A (en) * 1992-10-09 1994-08-09 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP3322440B2 (ja) * 1993-06-24 2002-09-09 三洋電機株式会社 薄膜多結晶シリコンの製造方法
US5811021A (en) * 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
US6518494B1 (en) * 1995-08-22 2003-02-11 Matsushita Electric Industrial Co., Ltd. Silicon structure, method for producing the same, and solar battery using the silicon structure
US5976481A (en) * 1996-05-21 1999-11-02 Tokuyama Corporation Polycrystal silicon rod and production process therefor
JPH10117006A (ja) * 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
US6111191A (en) * 1997-03-04 2000-08-29 Astropower, Inc. Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
US5825068A (en) * 1997-03-17 1998-10-20 Integrated Device Technology, Inc. Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor
DE19711550C2 (de) * 1997-03-20 2000-06-21 Bayer Ag Verfahren zur Herstellung von im wesentlichen Randzonen-freien Formteilen aus multikristallinem Silicium und die Verwendung dieser Formteile
US6211455B1 (en) 1998-07-02 2001-04-03 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
AU2002301188B2 (en) * 1998-07-02 2004-04-29 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
US6472248B2 (en) 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
JP4638012B2 (ja) * 2000-10-27 2011-02-23 信越半導体株式会社 半導体基板とこれを利用した太陽電池セルおよびそれらの製造方法
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
AU2003256825A1 (en) * 2002-07-31 2004-02-16 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
DE102004048948A1 (de) * 2004-10-07 2006-04-20 Wacker Chemie Ag Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch
DE102005019797A1 (de) * 2005-04-28 2006-11-09 Blitzstrom Gmbh Verfahren zur Herstellung von Solarzellen Substraten
DE102005039118A1 (de) 2005-08-18 2007-02-22 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern von Silicium
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
US7959707B2 (en) * 2006-04-28 2011-06-14 Sri International Methods for producing consolidated materials
WO2008060704A2 (en) * 2006-06-02 2008-05-22 Innovalight, Inc. Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom
WO2008030966A1 (en) * 2006-09-07 2008-03-13 Innovalight, Inc. Semiconductor thin films formed from group iv nanoparticles
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
WO2008073763A2 (en) * 2006-12-07 2008-06-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7569462B2 (en) * 2006-12-13 2009-08-04 Applied Materials, Inc. Directional crystallization of silicon sheets using rapid thermal processing
EP2102901A1 (de) * 2006-12-13 2009-09-23 Innovalight, Inc. Verfahren zur herstellung einer epitaxieschicht auf einem gruppe-iv-halbleitersubstrat
US7718707B2 (en) * 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
EP2140483A1 (de) * 2007-04-04 2010-01-06 Innovalight, Inc. Verfahren zur optimierung von dünnschichtbildung mit reaktiven gasen
US20080295882A1 (en) * 2007-05-31 2008-12-04 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US20090053878A1 (en) * 2007-08-21 2009-02-26 Maxim Kelman Method for fabrication of semiconductor thin films using flash lamp processing
US8334194B2 (en) 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US7851336B2 (en) * 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) * 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US8445364B2 (en) * 2008-06-02 2013-05-21 Corning Incorporated Methods of treating semiconducting materials including melting and cooling
US8049097B2 (en) * 2008-08-11 2011-11-01 General Electric Company Solar cell including cooling channels and method for fabrication
US8545944B2 (en) * 2008-09-19 2013-10-01 Sri International Method for producing solar grade films from semiconductor powders
EP2356696A4 (de) * 2009-05-06 2013-05-15 Thinsilicon Corp Photovoltaikzellen und verfahren zur verstärkung der lichterfassung in halbleiterschichtstapeln
EP2368276A4 (de) * 2009-06-10 2013-07-03 Thinsilicon Corp Pv-modul und verfahren zur herstellung eines pv-moduls mit mehreren halbleiterschichtstapeln
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
US9620664B2 (en) 2010-05-25 2017-04-11 Mossey Creek Technologies, Inc. Coating of graphite tooling for manufacture of semiconductors
US8609453B2 (en) 2010-11-22 2013-12-17 International Business Machines Corporation Low cost solar cell manufacture method employing a reusable substrate
US8828791B2 (en) * 2011-07-20 2014-09-09 Mossey Creek Solar, LLC Substrate for use in preparing solar cells
EP3434646A1 (de) * 2017-07-25 2019-01-30 Total Solar International Verfahren zur wiederverwertung von submikron-si-partikeln aus einem si-wafer-herstellungsverfahren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
DE3536743C2 (de) * 1985-10-15 1994-11-10 Siemens Ag Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen
US5336335A (en) * 1992-10-09 1994-08-09 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049303A1 (de) * 2008-09-29 2010-04-01 Qimonda Ag Verfahren zur Herstellung eines Silizium-Wafers für Solarzellen
DE102008049303B4 (de) * 2008-09-29 2012-05-24 Qimonda Ag Verfahren zur Herstellung eines Silizium-Wafers und Siliziumwafer für Solarzellen

Also Published As

Publication number Publication date
ES2134818T3 (es) 1999-10-16
CA2107975C (en) 2003-08-05
AU4891193A (en) 1994-04-21
AU667130B2 (en) 1996-03-07
EP0591949B1 (de) 1999-07-28
EP0591949A1 (de) 1994-04-13
CA2107975A1 (en) 1994-04-10
US5496416A (en) 1996-03-05
JPH06342923A (ja) 1994-12-13
EP0911885B1 (de) 2009-12-30
DE69334310D1 (de) 2010-02-11
JP2619207B2 (ja) 1997-06-11
DE69325764D1 (de) 1999-09-02
EP0911885A2 (de) 1999-04-28
US5336335A (en) 1994-08-09
EP0911885A3 (de) 1999-05-12

Similar Documents

Publication Publication Date Title
DE69325764T2 (de) Verfahren zur Herstellung einer verbesserte Solarzelle aus säulenförmigem, körnigem, polycrystallinem Silizium
DE69125554D1 (de) Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium
DE59009771D1 (de) Verfahren zur Herstellung einer Chalkopyrit-Solarzelle.
DE3577688D1 (de) Pulver hoher reinheit aus hexagonalem bornitrid und verfahren zu seiner herstellung.
DE59203585D1 (de) Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe.
DE69314717D1 (de) Verfahren zur Herstellung polykristalliner Siliciumcarbid-Fiber
DE69604452T2 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69623585T2 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69114760D1 (de) Verfahren zur Herstellung einer Solarzelle.
DE69325325D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69204386T2 (de) Verfahren zur Herstellung eines polykristallinen Siliziumfilmes.
ATA159879A (de) Polykristalliner formkoerper aus alpha-silicimcarbid und verfahren zu seiner herstellung
DE69830024D1 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69434536D1 (de) Verfahren zur Herstellung von halbleitenden Wafern
DE69431385T2 (de) Verfahren zur Herstellung von Silizium-Halbleiterplättchen
DE69413910D1 (de) Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen
DE3677169D1 (de) Hochreine siliziumnitridfaser und verfahren zu ihrer herstellung.
FI103787B (fi) Menetelmä muurahaishapon valmistamiseksi hajottamalla termisesti kvaternäärisiä ammoniumformiaatteja
DE59409218D1 (de) Solarzelle aus einer neuartigen Siliziumhalbleiterscheibe und Verfahren zur Herstellung der Siliziumhalbleiterscheibe
DE60015228D1 (de) Verfahren zur Herstellung von kristallinem Silizium
DE69304353T2 (de) Verfahren zur Herstellung von Festoxid-Brennstoffzellen
DE69327779D1 (de) Ätzverfahren für Heterostrukturen aus Materialien der III-V Gruppe
DE69230165T2 (de) Verfahren zur Herstellung von trommelpolierten Stromkollektoren
DE69604948T2 (de) Verfahren zur Züchtung einkristalliner Silizium aus der Dampfphase
DE59209042D1 (de) Dünne Solarzelle und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee