ES2134818T3 - Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar. - Google Patents
Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar.Info
- Publication number
- ES2134818T3 ES2134818T3 ES93116174T ES93116174T ES2134818T3 ES 2134818 T3 ES2134818 T3 ES 2134818T3 ES 93116174 T ES93116174 T ES 93116174T ES 93116174 T ES93116174 T ES 93116174T ES 2134818 T3 ES2134818 T3 ES 2134818T3
- Authority
- ES
- Spain
- Prior art keywords
- silicon
- polycrystalline silicon
- granular
- solar cell
- manufacturing procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 239000008187 granular material Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
LA INVENCION SE REFIERE A TECNICAS PARA LA FABRICACION DE LAMINAS POLICRISTALINAS DE GRANO COLUMNAR, QUE SON ESPECIALMENTE UTILES COMO SUSTRATOS O DISCOS PARA CELULAS SOLARES. LA LAMINA SE HACE APLICANDO SILICIO GRANULAR A UN MATERIAL DE FIJACION, QUE SOPORTA EL MATERIAL GRANULAR. EL MATERIAL DE FIJACION Y EL SILICIO GRANULAR SE SOMETEN A UN PERFIL TERMICO, TODO LO CUAL IMPULSA EL DESARROLLO COLUMNAR MEDIANTE LA FUSION DEL SILICIO DESDE LA PARTE SUPERIOR HACIA ABAJO. EL PERFIL TERMICO CREA SECUENCIALMENTE UNA ZONA DE FUSION EN LA PARTE SUPERIOR DEL SILICIO GRANULAR, Y DESPUES UNA ZONA DE DESARROLLO DONDE COEXISTEN TANTO EL LIQUIDO COMO LA CAPA LAMINAR POLICRISTALINA DE DESARROLLO. SE CREA UNA ZONA DE RECOCIDO, DONDE SE REDUCE CONTROLABLEMENTE LA TEMPERATURA DE LA CAPA LAMINAR DE SILICIO POLICRISTALINO DE DESARROLLO, PARA OBTENER ATENUACION DE EFECTOS RESIDUALES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/959,009 US5336335A (en) | 1992-10-09 | 1992-10-09 | Columnar-grained polycrystalline solar cell and process of manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2134818T3 true ES2134818T3 (es) | 1999-10-16 |
Family
ID=25501555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93116174T Expired - Lifetime ES2134818T3 (es) | 1992-10-09 | 1993-10-06 | Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar. |
Country Status (7)
Country | Link |
---|---|
US (2) | US5336335A (es) |
EP (2) | EP0591949B1 (es) |
JP (1) | JP2619207B2 (es) |
AU (1) | AU667130B2 (es) |
CA (1) | CA2107975C (es) |
DE (2) | DE69334310D1 (es) |
ES (1) | ES2134818T3 (es) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE36156E (en) * | 1992-10-09 | 1999-03-23 | Astropower, Inc. | Columnar-grained polycrystalline solar cell and process of manufacture |
US5336335A (en) * | 1992-10-09 | 1994-08-09 | Astropower, Inc. | Columnar-grained polycrystalline solar cell and process of manufacture |
JP3322440B2 (ja) * | 1993-06-24 | 2002-09-09 | 三洋電機株式会社 | 薄膜多結晶シリコンの製造方法 |
US5811021A (en) * | 1995-02-28 | 1998-09-22 | Hughes Electronics Corporation | Plasma assisted chemical transport method and apparatus |
US6518494B1 (en) * | 1995-08-22 | 2003-02-11 | Matsushita Electric Industrial Co., Ltd. | Silicon structure, method for producing the same, and solar battery using the silicon structure |
JP3357675B2 (ja) * | 1996-05-21 | 2002-12-16 | 株式会社 トクヤマ | 多結晶シリコンロッドおよびその製造方法 |
JPH10117006A (ja) * | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置 |
EP0978146A4 (en) * | 1997-03-04 | 2000-08-09 | Astropower Inc | POLYCRYSTALLINE SOLAR CELL SUBSTRATE WITH COLUMNED GRAIN AND IMPROVED PRODUCTION PROCESS |
US5825068A (en) * | 1997-03-17 | 1998-10-20 | Integrated Device Technology, Inc. | Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor |
DE19711550C2 (de) * | 1997-03-20 | 2000-06-21 | Bayer Ag | Verfahren zur Herstellung von im wesentlichen Randzonen-freien Formteilen aus multikristallinem Silicium und die Verwendung dieser Formteile |
AU2002301188B2 (en) * | 1998-07-02 | 2004-04-29 | Astropower | Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
AU749571B2 (en) | 1998-07-02 | 2002-06-27 | Astropower Inc. | Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
US6472248B2 (en) | 1999-07-04 | 2002-10-29 | Canon Kabushiki Kaisha | Microcrystalline series photovoltaic element and process for fabrication of same |
JP4638012B2 (ja) * | 2000-10-27 | 2011-02-23 | 信越半導体株式会社 | 半導体基板とこれを利用した太陽電池セルおよびそれらの製造方法 |
KR100487426B1 (ko) * | 2001-07-11 | 2005-05-04 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법 |
WO2004012257A1 (en) * | 2002-07-31 | 2004-02-05 | Astropower, Inc. | Method and apparatus for manufacturing net shape semiconductor wafers |
DE102004048948A1 (de) * | 2004-10-07 | 2006-04-20 | Wacker Chemie Ag | Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch |
DE102005019797A1 (de) * | 2005-04-28 | 2006-11-09 | Blitzstrom Gmbh | Verfahren zur Herstellung von Solarzellen Substraten |
DE102005039118A1 (de) | 2005-08-18 | 2007-02-22 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Zerkleinern von Silicium |
US7572334B2 (en) * | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
US7959707B2 (en) * | 2006-04-28 | 2011-06-14 | Sri International | Methods for producing consolidated materials |
WO2008060704A2 (en) * | 2006-06-02 | 2008-05-22 | Innovalight, Inc. | Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom |
WO2008030966A1 (en) * | 2006-09-07 | 2008-03-13 | Innovalight, Inc. | Semiconductor thin films formed from group iv nanoparticles |
US20080072953A1 (en) * | 2006-09-27 | 2008-03-27 | Thinsilicon Corp. | Back contact device for photovoltaic cells and method of manufacturing a back contact device |
EP2089897A2 (en) * | 2006-12-07 | 2009-08-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
US7569462B2 (en) * | 2006-12-13 | 2009-08-04 | Applied Materials, Inc. | Directional crystallization of silicon sheets using rapid thermal processing |
CN101647092A (zh) * | 2006-12-13 | 2010-02-10 | 创新发光体公司 | 在ⅳ族半导体基底上形成外延层的方法 |
US7718707B2 (en) * | 2006-12-21 | 2010-05-18 | Innovalight, Inc. | Method for preparing nanoparticle thin films |
EP2140483A1 (en) * | 2007-04-04 | 2010-01-06 | Innovalight, Inc. | Methods for optimizing thin film formation with reactive gases |
WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
US8968438B2 (en) * | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
US20090053878A1 (en) * | 2007-08-21 | 2009-02-26 | Maxim Kelman | Method for fabrication of semiconductor thin films using flash lamp processing |
US8334194B2 (en) * | 2008-02-06 | 2012-12-18 | Motech Americas, Llc | Methods and apparatus for manufacturing semiconductor wafers |
US7851336B2 (en) * | 2008-03-13 | 2010-12-14 | Innovalight, Inc. | Method of forming a passivated densified nanoparticle thin film on a substrate |
US8247312B2 (en) * | 2008-04-24 | 2012-08-21 | Innovalight, Inc. | Methods for printing an ink on a textured wafer surface |
US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
US8445364B2 (en) * | 2008-06-02 | 2013-05-21 | Corning Incorporated | Methods of treating semiconducting materials including melting and cooling |
US8049097B2 (en) * | 2008-08-11 | 2011-11-01 | General Electric Company | Solar cell including cooling channels and method for fabrication |
US8545944B2 (en) * | 2008-09-19 | 2013-10-01 | Sri International | Method for producing solar grade films from semiconductor powders |
DE102008049303B4 (de) * | 2008-09-29 | 2012-05-24 | Qimonda Ag | Verfahren zur Herstellung eines Silizium-Wafers und Siliziumwafer für Solarzellen |
EP2356696A4 (en) * | 2009-05-06 | 2013-05-15 | Thinsilicon Corp | PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES |
JP2012523716A (ja) * | 2009-06-10 | 2012-10-04 | シンシリコン・コーポレーション | 光起電モジュール、及び、複数半導体層スタックを有する光起電モジュールの製造方法 |
US20110114156A1 (en) * | 2009-06-10 | 2011-05-19 | Thinsilicon Corporation | Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode |
US9620664B2 (en) | 2010-05-25 | 2017-04-11 | Mossey Creek Technologies, Inc. | Coating of graphite tooling for manufacture of semiconductors |
US8609453B2 (en) | 2010-11-22 | 2013-12-17 | International Business Machines Corporation | Low cost solar cell manufacture method employing a reusable substrate |
US8828791B2 (en) * | 2011-07-20 | 2014-09-09 | Mossey Creek Solar, LLC | Substrate for use in preparing solar cells |
EP3434646A1 (en) * | 2017-07-25 | 2019-01-30 | Total Solar International | Method for recycling sub-micron si-particles from a si wafer production process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953876A (en) * | 1973-06-07 | 1976-04-27 | Dow Corning Corporation | Silicon solar cell array |
DE3536743C2 (de) * | 1985-10-15 | 1994-11-10 | Siemens Ag | Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen |
US5336335A (en) * | 1992-10-09 | 1994-08-09 | Astropower, Inc. | Columnar-grained polycrystalline solar cell and process of manufacture |
-
1992
- 1992-10-09 US US07/959,009 patent/US5336335A/en not_active Expired - Fee Related
-
1993
- 1993-10-06 EP EP93116174A patent/EP0591949B1/en not_active Expired - Lifetime
- 1993-10-06 DE DE69334310T patent/DE69334310D1/de not_active Expired - Lifetime
- 1993-10-06 ES ES93116174T patent/ES2134818T3/es not_active Expired - Lifetime
- 1993-10-06 DE DE69325764T patent/DE69325764T2/de not_active Expired - Fee Related
- 1993-10-06 EP EP99100131A patent/EP0911885B1/en not_active Expired - Lifetime
- 1993-10-07 CA CA002107975A patent/CA2107975C/en not_active Expired - Fee Related
- 1993-10-08 AU AU48911/93A patent/AU667130B2/en not_active Ceased
- 1993-10-12 JP JP5254517A patent/JP2619207B2/ja not_active Expired - Fee Related
-
1994
- 1994-08-05 US US08/286,673 patent/US5496416A/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE69325764T2 (de) | 2000-03-02 |
JP2619207B2 (ja) | 1997-06-11 |
CA2107975C (en) | 2003-08-05 |
AU4891193A (en) | 1994-04-21 |
AU667130B2 (en) | 1996-03-07 |
JPH06342923A (ja) | 1994-12-13 |
US5336335A (en) | 1994-08-09 |
EP0911885B1 (en) | 2009-12-30 |
EP0591949A1 (en) | 1994-04-13 |
CA2107975A1 (en) | 1994-04-10 |
EP0591949B1 (en) | 1999-07-28 |
EP0911885A2 (en) | 1999-04-28 |
DE69325764D1 (de) | 1999-09-02 |
DE69334310D1 (de) | 2010-02-11 |
EP0911885A3 (en) | 1999-05-12 |
US5496416A (en) | 1996-03-05 |
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Legal Events
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